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    • 2. 发明申请
    • Sub-Resolutional Grayscale Reticle
    • 子分辨灰度光栅
    • US20100040958A1
    • 2010-02-18
    • US12193568
    • 2008-08-18
    • Bruce D. UlrichYoshi OnoWei Gao
    • Bruce D. UlrichYoshi OnoWei Gao
    • G03F1/00
    • G03F1/50G03F7/0005
    • A sub-resolutional grayscale reticle and associated fabrication method have been presented. The method provides a transparent substrate, and forms a plurality of coincident partial-light transmissive layers overlying the transparent substrate. A pattern is formed, sub-resolutional at a first wavelength, in at least one of the transmissive layers. If there are n transmissive layers, the reticle transmits at least (n+1) intensities of light. In one aspect, each of the plurality of transmissive layers has the same extinction coefficient and the same thickness. In other aspects, the transmissive layers may have different thickness. Then, even if the extinction coefficients are the same, the attenuation of light through each layer is different. The transmission characteristics of the reticle can be further varied if the transmissive layers have different extinction coefficients. Likewise, the transmission characteristics through the sub-resolutional patterns can be varied.
    • 已经提出了一种亚分辨灰度标线和相关的制造方法。 该方法提供透明基板,并且形成覆盖透明基板的多个重合部分透光层。 在至少一个透射层中形成在第一波长处副溶液的图案。 如果存在n个透射层,则光罩传播至少(n + 1)个光强。 在一个方面,多个透射层中的每一个具有相同的消光系数和相同的厚度。 在其它方面,透射层可以具有不同的厚度。 那么即使消光系数相同,每层的光的衰减也是不同的。 如果透射层具有不同的消光系数,则可以进一步改变掩模版的透射特性。 同样,可以改变通过子解决图案的传输特性。
    • 4. 发明授权
    • Method of making a grayscale reticle using step-over lithography for shaping microlenses
    • 使用逐步光刻制作灰阶标线的方法,用于成型微透镜
    • US07678512B2
    • 2010-03-16
    • US11657326
    • 2007-01-24
    • Yoshi OnoBruce D. UlrichWei Gao
    • Yoshi OnoBruce D. UlrichWei Gao
    • G03F1/00
    • G03F7/0005G03F1/50
    • A method of fabricating a grayscale reticle includes preparing a quartz wafer substrate; depositing a layer of SRO on the top surface of the quartz substrate; patterning and etching the SRO to form an initial microlens pattern using step-over lithography; patterning and etching the SRO to form a recessed pattern in the SRO; depositing an opaque film on the SRO; patterning and etching the opaque film; depositing and planarizing a planarizing layer; cutting the quartz wafer into rectangular pieces sized to be smaller than a selected blank reticle; bonding the a piece a to selected reticle blank to form a grayscale reticle; and using the grayscale reticle to form a microlens array on a photoimager.
    • 制造灰度标线的方法包括制备石英晶片衬底; 在石英衬底的顶表面上沉积SRO层; 图案化和蚀刻SRO以使用逐步光刻形成初始微透镜图案; 图案化和蚀刻SRO以在SRO中形成凹陷图案; 在SRO上沉积不透明膜; 图案化和蚀刻不透明膜; 沉积和平坦化平坦化层; 将石英晶片切割成尺寸小于所选空白掩模版的矩形块; 将片a粘合到所选的掩模版坯料上以形成灰度标线; 并使用灰度标线在光学成像仪上形成微透镜阵列。
    • 5. 发明申请
    • Method of fabricating a grayscale mask using a wafer bonding process
    • 使用晶片接合工艺制造灰度掩模的方法
    • US20080197107A1
    • 2008-08-21
    • US11709008
    • 2007-02-20
    • Wei GaoBruce D. UlrichYoshi Ono
    • Wei GaoBruce D. UlrichYoshi Ono
    • C25F3/00
    • G03F1/68G03F1/50G03F1/54
    • A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.
    • 制造灰度掩模的方法包括制备石英晶片; 在石英晶片上沉积一层Si 3 N 4 N 4; 在石英晶片的背面上的Si 3 N 4 N 4层上直接沉积钛/ TEOS层; 从石英晶片的正面去除Si 3 N 4 N 4层; 在石英晶片的正面上直接沉积SRO层; 在SRO层上构图微透镜阵列; 蚀刻SRO层以在SRO层中形成微透镜阵列; 沉积一层钛; 图案化和蚀刻钛层; 在SRO微透镜阵列上沉积一层SiO 2 x N y O; CMP以平坦化从石英晶片的背面去除钛/ TEOS层的SiO 2 x N y层; 将平坦化的SiO x N N y N键合到石英光罩板上; 以及蚀刻以从结合结构去除Si 3 N 4 N 4以形成灰度掩模掩模版。
    • 8. 发明授权
    • Semi-transparent film grayscale mask
    • 半透明胶片灰度面膜
    • US08685596B2
    • 2014-04-01
    • US11950196
    • 2007-12-04
    • Wei GaoBruce D. UlrichYoshi Ono
    • Wei GaoBruce D. UlrichYoshi Ono
    • G03F1/00
    • G03F1/50
    • A grayscale mask made from semi-transparent film layers is provided, along with an associated fabrication method. The method provides a transparent substrate, such as quartz, with a surface. A first layer of a semi-transparent film having a surface with a first surface area, is formed overlying the substrate surface. At least a second layer of the semi-transparent film having a surface with a second surface area greater than the first surface area, is formed overlying the first layer. A first vertical region is formed having a light first attenuation parameter through the combination of substrate, first layer, and second layer. A second vertical region is formed having a light second attenuation parameter through the combination of the first layer and substrate, and a third vertical region is formed having a light third attenuation parameter through the substrate.
    • 提供了由半透明膜层制成的灰度掩模,以及相关的制造方法。 该方法提供具有表面的透明衬底,例如石英。 具有第一表面积的表面的半透明膜的第一层形成在衬底表面上。 至少第二层半透明膜具有第二表面积大于第一表面积的表面,覆盖在第一层上。 通过基板,第一层和第二层的组合形成具有第一衰减参数的第一垂直区域。 通过第一层和衬底的组合形成具有第二衰减参数的第二垂直区域,并且通过衬底形成具有第三衰减参数的第三垂直区域。
    • 10. 发明授权
    • Method of fabricating a grayscale mask using a wafer bonding process
    • 使用晶片接合工艺制造灰度掩模的方法
    • US07682761B2
    • 2010-03-23
    • US11709008
    • 2007-02-20
    • Wei GaoBruce D. UlrichYoshi Ono
    • Wei GaoBruce D. UlrichYoshi Ono
    • G03F1/00
    • G03F1/68G03F1/50G03F1/54
    • A method of fabricating a grayscale mask includes preparing a quartz wafer; depositing a layer of Si3N4 on the quartz wafer; depositing a layer of titanium/TEOS directly on the Si3N4 layer on the backside of the quartz wafer; removing the layer of Si3N4 from the front side of the quartz wafer; depositing a layer of SRO directly on the front side of the quartz wafer; patterning a microlens array on the SRO layer; etching the SRO layer to form a microlens array in the SRO layer; depositing a layer of titanium; patterning and etching the titanium layer; depositing a layer of SiOxNy on the SRO microlens array; CMP to planarize the layer of SiOxNy removing the titanium/TEOS layer from the backside of the quartz wafer; bonding the planarized SiOxNy to a quartz reticle plate; and etching to remove Si3N4 from the bonded structure to form a grayscale mask reticle.
    • 制造灰度掩模的方法包括制备石英晶片; 在石英晶片上沉积一层Si3N4; 在石英晶片的背面的Si 3 N 4层上直接沉积钛/ TEOS层; 从石英晶片的前侧去除Si 3 N 4层; 在石英晶片的正面上直接沉积SRO层; 在SRO层上构图微透镜阵列; 蚀刻SRO层以在SRO层中形成微透镜阵列; 沉积一层钛; 图案化和蚀刻钛层; 在SRO微透镜阵列上沉积一层SiOxNy; CMP平面化从石英晶片的背面去除钛/ TEOS层的SiO x N y层; 将平坦化的SiO x N y键合到石英光罩板上; 并蚀刻以从结合结构去除Si 3 N 4,以形成灰度掩模掩模版。