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1. 发明授权

US09159862B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09159862B2
公开(公告)日：2015-10-13
申请号：US13469738
申请日：2012-05-11
申请人： Yoonsil Jin , Hyunjung Park , Youngho Choe , Changseo Park
发明人： Yoonsil Jin , Hyunjung Park , Youngho Choe , Changseo Park
IPC分类号： H01L31/0352 , H01L31/18 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/035272 , H01L31/068 , H01L31/18 , H01L31/1864 , Y02E10/547 , Y02P70/521
摘要： A solar cell is formed to have a silicon semiconductor substrate of a first conductive type; an emitter layer having a second conductive type opposite the first conductive type and formed on a first surface of the silicon semiconductor substrate; a back surface field layer having the first conductive type and formed on a second surface of the silicon semiconductor substrate opposite to the first surface; and wherein the emitter layer includes at least a first shallow doping area and the back surface field layer includes at least a second shallow doping area, and wherein a thickness of the first shallow doping area of the emitter layer is different from a thickness of the second shallow doping area of the back surface field layer.
摘要翻译：太阳能电池被形成为具有第一导电类型的硅半导体衬底; 具有与第一导电类型相反并形成在硅半导体衬底的第一表面上的第二导电类型的发射极层; 具有第一导电类型并形成在与第一表面相对的硅半导体衬底的第二表面上的背表面场层; 并且其中所述发射极层包括至少第一浅掺杂区域，并且所述背表面场层包括至少第二浅掺杂区域，并且其中所述发射极层的所述第一浅掺杂区域的厚度不同于所述第二浅掺杂区域的厚度背面场层的浅掺杂区域。

2. 发明授权

US09337359B2 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09337359B2
公开(公告)日：2016-05-10
申请号：US12817998
申请日：2010-06-17
申请人： Hyunjung Park , Daeyong Lee , Youngho Choe , Dongho Han
发明人： Hyunjung Park , Daeyong Lee , Youngho Choe , Dongho Han
IPC分类号： H01L31/068 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/18 , H01L31/022425 , H01L31/068 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A method for manufacturing a solar cell may include forming an emitter region that forms a p-n junction with a semiconductor substrate of a first conductive type, forming a passivation layer on the semiconductor substrate, forming a dopant layer containing impurities of the first conductive type on the passivation layer, and locally forming a back surface field region at the semiconductor substrate by irradiating laser beams onto the semiconductor substrate to diffuse the impurities into the semiconductor substrate.
摘要翻译：一种制造太阳能电池的方法可以包括形成与第一导电类型的半导体衬底形成pn结的发射极区域，在半导体衬底上形成钝化层，在第一导电类型的半导体衬底上形成含有第一导电类型杂质的掺杂剂层钝化层，并且通过将半导体衬底上的激光束照射到半导体衬底上而将杂质扩散到半导体衬底中，在半导体衬底上局部形成背面场区域。

3. 发明申请

US20130332428A1 Online and Workload Driven Index Defragmentation 审中-公开
标题翻译：在线和工作负载驱动的索引碎片整理
公开(公告)号：US20130332428A1
公开(公告)日：2013-12-12
申请号：US13493396
申请日：2012-06-11
申请人： Vivek Ravindranath Narasayya , Hyunjung Park , Manoj Syamala
发明人： Vivek Ravindranath Narasayya , Hyunjung Park , Manoj Syamala
IPC分类号： G06F17/30
CPC分类号： G06F16/22
摘要： The subject disclosure is directed towards defragmenting one or more ranges of a database index based upon actual usage statistics and policy. A range tracker tracks and uses statistics corresponding to actual I/O operations to determine whether the benefit of defragmenting a range sufficiently (based upon the policy) exceeds its cost. If so, the online range defragmenter automatically defragments the range in an online manner. The range tracker may be configurable to monitor less than all ranges of the index.
摘要翻译：主题公开针对基于实际使用统计和策略对数据库索引的一个或多个范围进行碎片整理。范围跟踪器跟踪并使用与实际I / O操作相对应的统计信息，以确定是否充分（基于策略）对范围进行碎片整理的优点超过其成本。如果是这样，在线范围碎片整理程序会以在线方式自动对范围进行碎片整理。范围跟踪器可以被配置为监视小于索引的所有范围。

4. 发明申请

US20100096013A1 SOLAR CELL INCLUDING BACKSIDE REFLECTION LAYER COMPOSED OF HIGH-K DIELECTRICS 有权
标题翻译：太阳能电池，包括高K电介质组成的背面反射层
公开(公告)号：US20100096013A1
公开(公告)日：2010-04-22
申请号：US12530603
申请日：2008-03-18
申请人： Hyunjung Park
发明人： Hyunjung Park
IPC分类号： H01L31/028
CPC分类号： H01L31/02327 , H01L31/0216 , H01L31/02167 , H01L31/02168 , H01L31/056 , H01L31/1868 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a backside reflection layer containing a high-k dielectrics. The backside reflection layer includes a reflection film containing HfO2 or ZrO2 and a backside passivation layer containing of HfSixOy, ZrSixOy or SiO2, which are formed on a rear side of a substrate onto which solar rays are input. Thus, the solar cell exhibits excellent optical trapping for solar rays and low recombination rate of carriers on the rear side. Also, since the reflection film and the backside passivation layer have excellent thermal stability, it is possible to form electrodes by applying various processes such as thermal treatment.
摘要翻译：太阳能电池包括含有高k电介质的背面反射层。背面反射层包括含有HfO 2或ZrO 2的反射膜和包含HfSixOy，ZrSixOy或SiO2的背面钝化层，其形成在其上输入太阳光线的基板的后侧。因此，太阳能电池对于太阳光线显示出优异的光学俘获，并且在后侧表现出低载体的复合率。此外，由于反射膜和背面钝化层具有优异的热稳定性，所以可以通过应用诸如热处理的各种工艺来形成电极。

5. 发明授权

US08658884B2 Solar cell including backside reflection layer composed of high-K dielectrics 有权
标题翻译：包括由高K电介质构成的背面反射层的太阳能电池
公开(公告)号：US08658884B2
公开(公告)日：2014-02-25
申请号：US12530603
申请日：2008-03-18
申请人： Hyunjung Park
发明人： Hyunjung Park
IPC分类号： H01L31/042 , H01L31/0232 , H01L31/0216
CPC分类号： H01L31/02327 , H01L31/0216 , H01L31/02167 , H01L31/02168 , H01L31/056 , H01L31/1868 , Y02E10/52 , Y02E10/545 , Y02E10/546 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a backside reflection layer containing a high-k dielectrics. The backside reflection layer includes a reflection film containing HfO2 or ZrO2 and a backside passivation layer containing of HfSixOy, ZrSixOy or SiO2, which are formed on a rear side of a substrate onto which solar rays are input. Thus, the solar cell exhibits excellent optical trapping for solar rays and low recombination rate of carriers on the rear side. Also, since the reflection film and the backside passivation layer have excellent thermal stability, it is possible to form electrodes by applying various processes such as thermal treatment.
摘要翻译：太阳能电池包括含有高k电介质的背面反射层。背面反射层包括含有HfO 2或ZrO 2的反射膜和包含HfSixOy，ZrSixOy或SiO2的背面钝化层，其形成在其上输入太阳光线的基板的后侧。因此，太阳能电池对于太阳光线显示出优异的光学俘获，并且在后侧表现出低载体的复合率。此外，由于反射膜和背面钝化层具有优异的热稳定性，所以可以通过应用诸如热处理的各种工艺来形成电极。

6. 发明申请

US20120174026A1 MOBILE TERMINAL AND CONTROLLING METHOD THEREOF 审中-公开
标题翻译：移动终端及其控制方法
公开(公告)号：US20120174026A1
公开(公告)日：2012-07-05
申请号：US13184268
申请日：2011-07-15
申请人： Minsik SHIM , Hyunjung Park , Sumi Kim
发明人： Minsik SHIM , Hyunjung Park , Sumi Kim
IPC分类号： G06F3/048
CPC分类号： G06F3/0488 , G06F3/04817 , G06F3/0483 , G06F3/0485
摘要： A mobile terminal and controlling method thereof are discussed, which facilitates a terminal to be used in further consideration of user's convenience. The method includes determining a first order and a second order for a plurality of home screens, if a first touch action is detected on a touchscreen, sequentially displaying a plurality of home screens on the touchscreen in the first order, and if a second touch action is detected on the touchscreen, sequentially displaying a plurality of home screens on the touchscreen in the second order. Accordingly, a terminal user is able to arrange a desired object on a desired one of a plurality of home screens more conveniently to suit terminal user's taste.
摘要翻译：讨论了移动终端及其控制方法，这便于终端进一步考虑用户的便利性。该方法包括：如果在触摸屏上检测到第一触摸动作，则以第一顺序顺序地在触摸屏上显示多个主屏幕，以及如果第二触摸动作，则确定多个主屏幕的第一顺序和第二顺序在触摸屏上检测到，以二次顺序地在触摸屏上显示多个主屏幕。因此，终端用户能够更方便地将期望对象布置在多个主屏幕中期望的对象上，以适应终端用户的口味。

7. 发明授权

US08642372B2 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08642372B2
公开(公告)日：2014-02-04
申请号：US12489131
申请日：2009-06-22
申请人： Juhwa Cheong , Hyunjung Park , Junyong Ahn , Seongeun Lee , Jiweon Jeong
发明人： Juhwa Cheong , Hyunjung Park , Junyong Ahn , Seongeun Lee , Jiweon Jeong
IPC分类号： H01L21/00 , H01L31/00
CPC分类号： H01L31/02363 , H01L31/02168 , H01L31/18 , Y02E10/50 , Y02E10/52
摘要： A method of manufacturing a solar cell includes forming jagged portions non-uniformly on a surface of a substrate, forming a first type semiconductor and a second type semiconductor in the substrate, forming a first electrode to contact the first type semiconductor, and forming a second electrode to contact the second type semiconductor. An etchant used in a wet etching process in manufacturing the solar cell includes about 0.5 wt % to 10 wt % of HF, about 30 wt % to 60 wt % of HNO3, and up to about 30 wt % of acetic acid based on total weight of the etchant.
摘要翻译：太阳能电池的制造方法包括在基板的表面上不均匀地形成锯齿状的部分，在基板上形成第一型半导体和第二型半导体，形成与第一型半导体接触的第一电极，形成第二电极接触第二类型半导体。在制造太阳能电池的湿式蚀刻工艺中使用的蚀刻剂包括约0.5重量％至10重量％的HF，约30重量％至60重量％的HNO 3和至多约30重量％的基于总重量的乙酸的蚀刻剂。

8. 发明申请

US20100071762A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100071762A1
公开(公告)日：2010-03-25
申请号：US12515660
申请日：2007-06-20
申请人： Seongeun Lee , Hyunjung Park
发明人： Seongeun Lee , Hyunjung Park
IPC分类号： H01L31/0216 , H01L31/18
CPC分类号： H01L31/02168 , H01L31/068 , H01L31/072 , Y02E10/547
摘要： A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
摘要翻译：太阳能电池包括具有第一导电半导体衬底的pn结构，形成在第一导电半导体衬底上并具有与第一导电半导体衬底相反的导电的第二导电半导体层，以及形成在第一和第二导电半导体衬底之间的界面处的pn结，第二导电半导体衬底/层; 形成在第二导电半导体层上并由厚度为40-100nm的SiNx：H薄膜构成的第一抗反射膜; 形成在第一防反射膜上并由氮氧化硅构成的第二抗反射膜; 形成在所述第二防反射膜上的预定图案的前电极，通过所述第一和第二防反射膜与所述第二导电半导体层连接; 以及形成在与前电极相反一侧的后电极，其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。

9. 发明申请

US20110023960A1 SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20110023960A1
公开(公告)日：2011-02-03
申请号：US12850459
申请日：2010-08-04
申请人： Seongeun Lee , Hyunjung Park
发明人： Seongeun Lee , Hyunjung Park
IPC分类号： H01L31/0216 , H01L31/0232
CPC分类号： H01L31/02168 , H01L31/068 , H01L31/072 , Y02E10/547
摘要： A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first and second conductive semiconductor substrate/layer; a first anti-reflection film formed on the second conductive semiconductor layer and composed of SiNx:H thin film with 40-100 nm thickness; a second anti-reflection film formed on the first anti-reflection film and composed of silicon oxy-nitride; a front electrode formed on the second anti-reflection film in a predetermined pattern and connected to the second conductive semiconductor layer through the first and second anti-reflection films; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
摘要翻译：太阳能电池包括具有第一导电半导体衬底的pn结构，形成在第一导电半导体衬底上并具有与第一导电半导体衬底相反的导电的第二导电半导体层，以及形成在第一和第二导电半导体衬底之间的界面处的pn结，第二导电半导体衬底/层; 形成在第二导电半导体层上并由厚度为40-100nm的SiNx：H薄膜构成的第一抗反射膜; 形成在第一防反射膜上并由氮氧化硅构成的第二抗反射膜; 形成在所述第二防反射膜上的预定图案的前电极，通过所述第一和第二防反射膜与所述第二导电半导体层连接; 以及形成在与前电极相反一侧的后电极，其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。

10. 发明申请

US20100059114A1 SOLAR CELL 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20100059114A1
公开(公告)日：2010-03-11
申请号：US12519027
申请日：2007-07-10
申请人： Hyunjung Park , Sung-jin Kim , Jin-ho Kim
发明人： Hyunjung Park , Sung-jin Kim , Jin-ho Kim
IPC分类号： H01L31/00
CPC分类号： H01L31/02167 , G02B1/113 , H01L31/02168 , H01L31/022425 , H01L31/068 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell includes a p-n structure having a first conductive semiconductor substrate, a second conductive semiconductor layer formed on the first conductive semiconductor substrate and having a conduction opposite to the first conductive semiconductor substrate, and a p-n junction formed at an interface between the first conductive semiconductor substrate and the second conductive semiconductor layer; a passivated layer formed on the second conductive semiconductor layer and composed of silicon oxynitride with a refractive index of 1.45 to 1.70; an anti-reflection film formed on the passivated layer and composed of silicon nitride; a front electrode connected to the second conductive semiconductor layer with passing through a part of the passivated layer and the anti-reflection film and exposed outward; and a rear electrode formed at an opposite side to the front electrode with the first conductive semiconductor substrate being interposed therebetween to be connected to the first conductive semiconductor substrate.
摘要翻译：太阳能电池包括具有第一导电半导体衬底的pn结构，形成在第一导电半导体衬底上并且具有与第一导电半导体衬底相反的导电的第二导电半导体层，以及形成在第一导电半导体衬底之间的界面处的pn结半导体衬底和第二导电半导体层; 形成在第二导电半导体层上并由折射率为1.45至1.70的氧氮化硅组成的钝化层; 形成在钝化层上并由氮化硅构成的抗反射膜; 连接到第二导电半导体层的前电极，其通过钝化层的一部分和防反射膜向外露出; 以及形成在与前电极相反一侧的后电极，其间插入有第一导电半导体衬底以连接到第一导电半导体衬底。

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