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1. 发明申请

US20070278427A1 Closed loop dose control for ion implantation 有权
标题翻译：离子注入的闭环剂量控制
公开(公告)号：US20070278427A1
公开(公告)日：2007-12-06
申请号：US11543346
申请日：2006-10-04
申请人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
发明人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24535 , H01J2237/31703
摘要： A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
摘要翻译：一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。从离子注入系统的区域获得一个或多个单独的上游电流测量。从一个或多个电流测量导出终端返回电流或复合上游电流。然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

2. 发明授权

US07557363B2 Closed loop dose control for ion implantation 有权
标题翻译：离子注入的闭环剂量控制
公开(公告)号：US07557363B2
公开(公告)日：2009-07-07
申请号：US11543346
申请日：2006-10-04
申请人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
发明人： Yongzhang Huang , Brian S. Freer , John Ye , Christopher Godfrey , Michael A. Graf , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/304 , H01J37/3171 , H01J2237/24507 , H01J2237/24535 , H01J2237/31703
摘要： A method derives a terminal return current or upstream current to adjust and/or compensate for variations in beam current during ion implantation. One or more individual upstream current measurements are obtained from a region of an ion implantation system. A terminal return current, or composite upstream current, is derived from the one or more current measurements. The terminal return current is then employed to adjust scanning or dose of an ion beam in order to facilitate beam current uniformity at a target wafer.
摘要翻译：一种方法导出终端返回电流或上游电流，以调整和/或补偿离子注入期间束电流的变化。从离子注入系统的区域获得一个或多个单独的上游电流测量。从一个或多个电流测量导出终端返回电流或复合上游电流。然后使用端子返回电流来调整离子束的扫描或剂量，以便于目标晶片处的束电流均匀性。

3. 发明授权

US07507977B2 System and method of ion beam control in response to a beam glitch 有权
标题翻译：响应于光束毛刺的离子束控制的系统和方法
公开(公告)号：US07507977B2
公开(公告)日：2009-03-24
申请号：US11441609
申请日：2006-05-26
申请人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
发明人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
IPC分类号： G21K5/10
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J37/3045 , H01J2237/0206 , H01J2237/24564 , H01J2237/2485 , H01J2237/30455 , H01J2237/31703 , Y10T307/937 , Y10T307/951 , Y10T307/957
摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.
摘要翻译：本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。光束控制技术可以应用于晶片掺杂重绘和占空因数降低。电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

4. 发明申请

US20080067433A1 System and method of ion beam control in response to a beam glitch 有权
标题翻译：响应于光束毛刺的离子束控制的系统和方法
公开(公告)号：US20080067433A1
公开(公告)日：2008-03-20
申请号：US11441609
申请日：2006-05-26
申请人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
发明人： Que Weiguo , Yongzhang Huang , John Ye , David Tao , Patrick Splinter
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/026 , H01J37/241 , H01J37/304 , H01J37/3045 , H01J2237/0206 , H01J2237/24564 , H01J2237/2485 , H01J2237/30455 , H01J2237/31703 , Y10T307/937 , Y10T307/951 , Y10T307/957
摘要： The present invention is directed to a switch circuit and method to quickly enable or disable the ion beam to a wafer within an ion implantation system. The beam control technique may be applied to wafer doping repaint and duty factor reduction. The circuit and method may be used to quench an arc that may form between high voltage electrodes associated with an ion source to shorten the duration of the arc and mitigate non-uniform ion implantations. The circuit and method facilitates repainting the ion beam over areas where an arc was detected to recover dose loss during such arcing. A high voltage high speed switching circuit is added between each high voltage supply and its respective electrode to quickly extinguish the arc to minimize disruption of the ion beam. The high voltage switch is controlled by a trigger circuit which detects voltage or current changes to each electrode. Protection circuits for the HV switch absorb energy from reactive components and clamp any overvoltages.
摘要翻译：本发明涉及一种用于在离子注入系统内快速启用或禁用离子束到晶片的开关电路和方法。光束控制技术可以应用于晶片掺杂重绘和占空因数降低。电路和方法可以用于淬灭可以在与离子源相关联的高压电极之间形成的电弧，以缩短电弧的持续时间并减轻非均匀的离子注入。电路和方法有助于在检测到电弧的区域上重新分离离子束，以在这种电弧过程中恢复剂量损失。在每个高压电源和其各自的电极之间增加高压高速开关电路，以快速熄灭电弧，以最小化离子束的破坏。高压开关由触发电路控制，该触发电路检测每个电极的电压或电流变化。 HV开关的保护电路从反应部件吸收能量并夹紧任何过电压。

5. 发明授权

US06541781B1 Waveguide for microwave excitation of plasma in an ion beam guide 有权
标题翻译：波导用于离子束引导中的等离子体的微波激发
公开(公告)号：US06541781B1
公开(公告)日：2003-04-01
申请号：US09625718
申请日：2000-07-25
申请人： Victor M. Benveniste , John Ye , William F. DiVergilio
发明人： Victor M. Benveniste , John Ye , William F. DiVergilio
IPC分类号： G21K510
CPC分类号： H01J37/32678 , H01J37/05 , H01J37/3171
摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.
摘要翻译：公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。该装置包括安装在沿着离子束的路径的通道中的质量分析磁体，适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置，其中可以包括沿通道的至少一部分安装的多个磁体。电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振（ECR）状态。多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上，以与给定的低能离子束的已知RF或微波频率的电场相互作用。本发明还包括质量分析器波导，其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。

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