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1. 发明申请

US20090102017A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20090102017A1
公开(公告)日：2009-04-23
申请号：US12247315
申请日：2008-10-08
申请人： Yong-kug BAE , Si-hyeung LEE , Tae-hyuk AHN , Seok-hwan OH
发明人： Yong-kug BAE , Si-hyeung LEE , Tae-hyuk AHN , Seok-hwan OH
IPC分类号： H01L27/108
CPC分类号： H01L27/10894 , H01L27/10852 , H01L28/91
摘要： A semiconductor device and a method of fabricating a semiconductor device provide high quality cylindrical capacitors. The semiconductor device includes a substrate defining a cell region and a peripheral circuit region, a plurality of capacitors in the cell region, and supports for supporting lower electrodes of the capacitors. The lower electrodes are disposed in a plurality of rows each extending in a first direction. A dielectric layer is disposed on the lower electrodes, and an upper electrode is disposed on the dielectric layer. The supports are in the form of stripes extending longitudinally in the first direction and spaced from each other along a second direction. Each of the supports engages the lower electrodes of a respective plurality of adjacent rows of the lower electrodes. Each one of the supports is also disposed at a different level in the device from the support that is adjacent thereto in the second direction.
摘要翻译：半导体器件和制造半导体器件的方法提供高质量的圆柱形电容器。半导体器件包括限定单元区域和外围电路区域的基板，单元区域中的多个电容器以及用于支撑电容器的下部电极的支撑。下电极配置成沿着第一方向延伸的多列。电介质层设置在下电极上，上电极设置在电介质层上。支撑体是沿着第一方向纵向延伸并且沿着第二方向彼此间隔开的条纹的形式。每个支撑件接合下电极的相应多个相邻行的下电极。每个支撑件还设置在与第二方向相邻的支撑件处于装置中的不同水平处。

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