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1. 发明授权

US08751900B2 Storage device having a non-volatile memory device and copy-back method thereof 有权
标题翻译：具有非易失性存储装置的存储装置及其复制方法
公开(公告)号：US08751900B2
公开(公告)日：2014-06-10
申请号：US13106892
申请日：2011-05-13
申请人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
发明人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
IPC分类号： G11C29/00 , H03M13/00
CPC分类号： G06F11/106 , H03M13/1102 , H03M13/136 , H03M13/152 , H03M13/155 , H03M13/2909 , H03M13/618
摘要： A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要翻译：存储装置包括从源区域输出读取数据的非易失性存储器装置和被配置为对读取数据中的多个向量执行ECC操作并将经纠错的读取数据写入到目标区域中的存储器控制器非易失性存储器件。存储器控制器声明对应于清洁区域的矢量是在纠错操作期间不使用多个矢量中的标志位的解码通过。

2. 发明申请

US20110283166A1 STORAGE DEVICE HAVING A NON-VOLATILE MEMORY DEVICE AND COPY-BACK METHOD THEREOF 有权
标题翻译：具有非易失性存储器件的存储器件及其复制方法
公开(公告)号：US20110283166A1
公开(公告)日：2011-11-17
申请号：US13106892
申请日：2011-05-13
申请人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
发明人： Yong June Kim , Hong Rak Son , Seonghyeog Choi , Junjin Kong , Yongtaew Yim , Jaehong Kim , KyoungLae Cho , Wootae Chang
IPC分类号： H03M13/05 , G06F11/10
CPC分类号： G06F11/106 , H03M13/1102 , H03M13/136 , H03M13/152 , H03M13/155 , H03M13/2909 , H03M13/618
摘要： A storage device includes a non-volatile memory device outputting read data from a source area and a memory controller configured to execute an ECC operation on a plurality of vectors in the read data and to write the error-corrected read data into target area of the non-volatile memory device. The memory controller declares that a vector corresponding to a clean area is decoding pass without using a flag bit among the plurality of vectors during the error correction operation.
摘要翻译：存储装置包括从源区域输出读取数据的非易失性存储器装置和被配置为对读取数据中的多个向量执行ECC操作并将经纠错的读取数据写入到目标区域中的存储器控制器非易失性存储器件。存储器控制器声明对应于清洁区域的矢量是在纠错操作期间不使用多个矢量中的标志位的解码通过。

3. 发明授权

US08711624B2 Memory device and self interleaving method thereof 有权
标题翻译：存储器件及其自交插方法
公开(公告)号：US08711624B2
公开(公告)日：2014-04-29
申请号：US13236249
申请日：2011-09-19
申请人： Seonghyeog Choi , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
发明人： Seonghyeog Choi , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
IPC分类号： G11C11/34
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/3404
摘要： A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
摘要翻译：存储器装置包括存储单元阵列，配置成使用交织方案将数据进行交错和加载到缓冲电路中的自交织器以及被配置为控制对存储单元阵列中的交错数据的编程的控制逻辑。

4. 发明申请

US20120069657A1 MEMORY DEVICE AND SELF INTERLEAVING METHOD THEREOF 有权
标题翻译：存储器件及其自动交错方法
公开(公告)号：US20120069657A1
公开(公告)日：2012-03-22
申请号：US13236249
申请日：2011-09-19
申请人： Seonghyeog CHOI , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
发明人： Seonghyeog CHOI , Hong Rak Son , Junjin Kong , Jaehong Kim , KyoungLae Cho , Yong June Kim
IPC分类号： G11C16/10 , G11C16/06
CPC分类号： G11C11/5621 , G11C16/10 , G11C16/3404
摘要： A memory device includes a memory cell array, a self interleaver configured to interleave and load data on the fly into a buffer circuit using an interleaving scheme, and a control logic configured to control programming of the interleaved data in the memory cell array.
摘要翻译：存储器装置包括存储单元阵列，配置成使用交织方案将数据交错和加载到缓冲器电路中的自交织器以及被配置为控制对存储单元阵列中的交错数据的编程的控制逻辑。

5. 发明授权

US08730738B2 Nonvolatile memory devices and methods of operating nonvolatile memory devices 有权
标题翻译：非易失性存储器件和操作非易失性存储器件的方法
公开(公告)号：US08730738B2
公开(公告)日：2014-05-20
申请号：US13211743
申请日：2011-08-17
申请人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
发明人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
IPC分类号： G11C11/34 , G11C16/06
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.
摘要翻译：操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

6. 发明申请

US20120257455A1 NONVOLATILE MEMORY DEVICES AND METHODS OF OPERATING NONVOLATILE MEMORY DEVICES 有权
标题翻译：非易失性存储器件和操作非易失性存储器件的方法
公开(公告)号：US20120257455A1
公开(公告)日：2012-10-11
申请号：US13211743
申请日：2011-08-17
申请人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
发明人： Eun Chu Oh , Hong Rak Son , KyoungLae Cho , Junjin Kong
IPC分类号： G11C16/10
CPC分类号： G11C16/10 , G11C16/0483 , G11C16/3454
摘要： Methods of operating nonvolatile memory devices including a plurality of cell strings each having at least one ground selection transistor, a plurality of memory cells, and at least one string selection transistor, the operating methods including receiving a command and an address, determining a voltage applying time in response to the input command and address, and applying a specific voltage to memory cells of cell strings corresponding to the input address during the determined voltage applying time.
摘要翻译：操作包括多个单元串的非易失性存储器件的方法，每个单元串具有至少一个接地选择晶体管，多个存储单元和至少一个串选择晶体管，所述操作方法包括接收命令和地址，确定施加的电压响应于输入命令和地址的时间，以及在确定的电压施加时间期间，将特定电压施加到对应于输入地址的单元串的存储单元。

7. 发明授权

US08595601B2 Methods of performing error detection/correction in nonvolatile memory devices 有权
标题翻译：在非易失性存储器件中执行错误检测/校正的方法
公开(公告)号：US08595601B2
公开(公告)日：2013-11-26
申请号：US13011279
申请日：2011-01-21
申请人： Yong June Kim , Junjin Kong , KyoungLae Cho
发明人： Yong June Kim , Junjin Kong , KyoungLae Cho
IPC分类号： H03M13/00
CPC分类号： G06F11/1072 , G06F11/1048 , G11C11/5642 , G11C16/3404 , G11C16/349
摘要： Methods of operating nonvolatile memory devices include testing a plurality of strings of nonvolatile memory cells in the memory device to identify at least one weak string therein having a higher probability of yielding erroneous read data error relative to other ones of the plurality of strings. An identity of the at least one weak string may be stored as weak column information. This weak column information may be used to facilitate error detection and correction operations. In particular, an error correction operation may be performed on a first plurality of bits of data read from the plurality of strings using an algorithm that modifies a weighting of the reliability of one or more data bits in the first plurality of bits of data based on the weak column information. More specifically, an algorithm may be used that interprets a bit of data read from the at least one weak string as having a relatively reduced reliability relative to other ones of the first plurality of data bits.
摘要翻译：操作非易失性存储器设备的方法包括测试存储器件中的多个非易失性存储单元串，以识别其中具有相对于多个字符串中的其他字符串产生错误读取数据错误的较高概率的至少一个弱字符串。至少一个弱字符串的身份可以存储为弱列信息。该弱列信息可以用于促进错误检测和校正操作。特别地，可以使用这样的算法对从多个串读取的数据的第一多个位进行纠错操作，所述算法基于在第一多个数据位中修改一个或多个数据位的可靠性的加权，该算法基于弱列信息。更具体地，可以使用一种算法，其将从至少一个弱串读取的数据位解释为相对于第一多个数据位中的其他数据位具有相对降低的可靠性。

8. 发明申请

US20110209031A1 Methods of Performing Error Detection/Correction in Nonvolatile Memory Devices 有权
标题翻译：在非易失性存储器件中执行错误检测/校正的方法
公开(公告)号：US20110209031A1
公开(公告)日：2011-08-25
申请号：US13011279
申请日：2011-01-21
申请人： Yong June Kim , Junjin Kong , KyoungLae Cho
发明人： Yong June Kim , Junjin Kong , KyoungLae Cho
IPC分类号： H03M13/05 , G11C16/06 , G06F11/10
CPC分类号： G06F11/1072 , G06F11/1048 , G11C11/5642 , G11C16/3404 , G11C16/349
摘要： Methods of operating nonvolatile memory devices include testing a plurality of strings of nonvolatile memory cells in the memory device to identify at least one weak string therein having a higher probability of yielding erroneous read data error relative to other ones of the plurality of strings. An identity of the at least one weak string may be stored as weak column information. This weak column information may be used to facilitate error detection and correction operations. In particular, an error correction operation may be performed on a first plurality of bits of data read from the plurality of strings using an algorithm that modifies a weighting of the reliability of one or more data bits in the first plurality of bits of data based on the weak column information. More specifically, an algorithm may be used that interprets a bit of data read from the at least one weak string as having a relatively reduced reliability relative to other ones of the first plurality of data bits.
摘要翻译：操作非易失性存储器设备的方法包括测试存储器件中的多个非易失性存储单元串，以识别其中具有相对于多个字符串中的其他字符串产生错误读取数据错误的较高概率的至少一个弱字符串。至少一个弱字符串的身份可以存储为弱列信息。该弱列信息可以用于促进错误检测和校正操作。特别地，可以使用这样的算法对从多个串读取的数据的第一多个位进行纠错操作，所述算法基于在第一多个数据位中修改一个或多个数据位的可靠性的加权，该算法基于弱列信息。更具体地，可以使用一种算法，其将从至少一个弱串读取的数据位解释为相对于第一多个数据位中的其他数据位具有相对降低的可靠性。

9. 发明授权

US08503230B2 Access method of non-volatile memory device 有权
标题翻译：非易失性存储器件的访问方法
公开(公告)号：US08503230B2
公开(公告)日：2013-08-06
申请号：US12588532
申请日：2009-10-19
申请人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
发明人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
IPC分类号： G11C11/34 , G11C16/04
CPC分类号： G11C16/3427 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5634
摘要： Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
摘要翻译：公开了一种非易失性存储器件的存取方法，包括检测第一存储单元的阈值电压变化，第一存储单元的阈值电压变化能够物理地影响第二存储器单元; 以及根据所述第一存储器单元的阈值电压变化的距离，从所述多个子分布中将所述第二存储器单元分配给所选择的子分布，所述多个子分布对应于所述第二存储器的目标分布细胞。

10. 发明申请

US20100149868A1 Access method of non-volatile memory device 有权
标题翻译：非易失性存储器件的访问方法
公开(公告)号：US20100149868A1
公开(公告)日：2010-06-17
申请号：US12588532
申请日：2009-10-19
申请人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
发明人： Han Woong Yoo , KyoungLae Cho , Seung-Hwan Song , Heeseok Eun , Hong Rak Son
IPC分类号： G11C16/04
CPC分类号： G11C16/3427 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/3418 , G11C16/3454 , G11C16/3459 , G11C2211/5621 , G11C2211/5634
摘要： Disclosed is an access method of a non-volatile memory device which comprises detecting a threshold voltage variation of a first memory cell, the a threshold voltage variation of the first memory cell being capable of physically affecting a second memory cell; and assigning the second memory cell to a selected sub-distribution from among a plurality of sub-distributions according to a distance of the threshold voltage variation of the first memory cell, the plurality of sub-distributions corresponding to a target distribution of the second memory cell.
摘要翻译：公开了一种非易失性存储器件的存取方法，包括检测第一存储单元的阈值电压变化，第一存储单元的阈值电压变化能够物理地影响第二存储器单元; 以及根据所述第一存储器单元的阈值电压变化的距离，从所述多个子分布中将所述第二存储器单元分配给所选择的子分布，所述多个子分布对应于所述第二存储器的目标分布细胞。

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