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    • 1. 发明申请
    • HYDROGEN PENETRATION BARRIER
    • 氢气穿透障碍物
    • US20110175078A1
    • 2011-07-21
    • US13119308
    • 2010-03-25
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • H01L51/30H01L29/16
    • C21D3/00C01B3/503C01B3/508
    • Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.
    • 提供了一种用于防止氢通过阻挡层扩散和排出的氢穿透阻挡层,并且防止由于氢离子扩散到材料中的材料的氢脆化。 详细地说,氢穿透阻挡层通过使用掺杂有p型杂质的半导体层和掺杂有n型杂质的半导体层和通过反向偏置电压施加的电位的内置电位来防止氢离子渗透 并且包括吸收氢分子以吸收氢分子的吸收层,并且使用由导电材料制成的吸收层作为反向偏置电压的施加电极,并将吸收到吸收层的氢电离并二次防止 渗透氢分子并防止氢脆化。
    • 2. 发明授权
    • Hydrogen penetration barrier
    • 氢穿透屏障
    • US08481999B2
    • 2013-07-09
    • US13119308
    • 2009-09-15
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • Yong Il KimIn Jung KimYun-Hee LeeKyoung Seok LeeSeung Hoon Nahm
    • H01L51/00
    • C21D3/00C01B3/503C01B3/508
    • Provided is a hydrogen penetration barrier for preventing hydrogen from being diffused and discharged through a barrier and preventing hydrogen embrittlement of a material due to diffusion of hydrogen ions into a material. In detail, the hydrogen penetration barrier prevents penetration of hydrogen ions by using a built-in potential of a semiconductor layer doped with a p-type impurity and a semiconductor layer doped with an n-type impurity and a potential applied by a reverse biased voltage and includes an absorption layer absorbing the hydrogen molecules to primarily prevent the penetration of the hydrogen molecules and uses the absorption layer made of the conductive material as an application electrode of the reverse biased voltage and ionizes the hydrogen absorbed to the absorption layer to secondarily prevent the penetration of the hydrogen molecules and prevent the hydrogen embrittlement.
    • 提供了一种用于防止氢通过阻挡层扩散和排出的氢穿透阻挡层,并且防止由于氢离子扩散到材料中的材料的氢脆化。 详细地说,氢穿透阻挡层通过使用掺杂有p型杂质的半导体层和掺杂有n型杂质的半导体层和通过反向偏置电压施加的电位的内置电位来防止氢离子渗透 并且包括吸收氢分子以吸收氢分子的吸收层,并且使用由导电材料制成的吸收层作为反向偏置电压的施加电极,并将吸收到吸收层的氢电离并二次防止 渗透氢分子并防止氢脆化。
    • 7. 发明授权
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US07342211B2
    • 2008-03-11
    • US11333981
    • 2006-01-18
    • Byung-Jun ParkYun-Hee Lee
    • Byung-Jun ParkYun-Hee Lee
    • H01L27/00H01L31/00H01L31/062H01L21/00H04N3/14
    • H01L27/14643H01L27/14621H01L27/14627H01L27/14689
    • Dark current caused by a crystalline defect in an interfacial surface of a device isolating layer is prevented according to an image sensor and a method of manufacturing the same. A first device isolating layer adjacent to a photodiode disposed on an upper surface of a semiconductor substrate protrudes from the semiconductor substrate. A side surface of the first device isolating layer is covered by a first spacer with a refractivity greater than that of the first device isolating layer. The photodiode is insulated by the device isolating layer protruding from the semiconductor substrate to prevent the dark current. By forming the spacer on the sidewall of the device isolating layer to attain total reflection, efficiency of light incident to the photodiode is improved.
    • 根据图像传感器及其制造方法,能够防止由器件隔离层的界面的结晶缺陷引起的暗电流。 与设置在半导体衬底的上表面上的光电二极管相邻的第一器件隔离层从半导体衬底突出。 第一器件隔离层的侧表面被折射率大于第一器件隔离层的折射率的第一隔离物覆盖。 光电二极管被从半导体衬底突出的器件隔离层绝缘,以防止暗电流。 通过在器件隔离层的侧壁上形成间隔物以获得全反射,提高了入射到光电二极管的光的效率。
    • 8. 发明授权
    • Device and method for automatically building database for home zone service
    • 自动构建家庭区域服务数据库的设备和方法
    • US06721755B1
    • 2004-04-13
    • US09632996
    • 2000-08-04
    • Yun-Hee Lee
    • Yun-Hee Lee
    • G06F700
    • H04W8/04H04W4/02H04W8/18H04W88/18Y10S707/99943Y10S707/99945
    • A device and method for automatically building a database for a home zone service in a mobile communication system. The device comprising a memory and processing unit, wherein the memory includes an address location database for storing latitude and longitude data corresponding to respective addresses, and a zone database for storing zone data for the respective locations, and wherein processor includes a client registration processor for creating a client database in the memory upon the receipt of client information, and a database processor for searching the address location database for the latitude and longitude information corresponding to the client's address when the registration of a new client is requested by the client registration processor, for searching the zone database for zone data for a location corresponding to the latitude and longitude information, and for creating a home zone database in the memory by taking the zone data as the home zone data for the client.
    • 一种用于在移动通信系统中自动构建家庭区域服务的数据库的设备和方法。 所述设备包括存储器和处理单元,其中所述存储器包括用于存储对应于各个地址的纬度和经度数据的地址位置数据库和用于存储各个位置的区域数据的区域数据库,并且其中处理器包括客户端注册处理器 在接收到客户端信息时在存储器中创建客户端数据库;以及数据库处理器,用于在客户端注册处理器请求新客户端的注册时,搜索地址位置数据库中与客户端地址对应的纬度和经度信息, 用于在区域数据库中搜索与纬度和经度信息相对应的位置的区域数据,并且通过将区域数据作为客户端的归属区域数据来创建存储器中的归属区域数据库。
    • 10. 发明申请
    • Image sensor and method of manufacturing the same
    • 图像传感器及其制造方法
    • US20070029463A1
    • 2007-02-08
    • US11333981
    • 2006-01-18
    • Byung-Jun ParkYun-Hee Lee
    • Byung-Jun ParkYun-Hee Lee
    • H01L27/00H01L31/00
    • H01L27/14643H01L27/14621H01L27/14627H01L27/14689
    • Dark current caused by a crystalline defect in an interfacial surface of a device isolating layer is prevented according to an image sensor and a method of manufacturing the same. A first device isolating layer adjacent to a photodiode disposed on an upper surface of a semiconductor substrate protrudes from the semiconductor substrate. A side surface of the first device isolating layer is covered by a first spacer with a refractivity greater than that of the first device isolating layer. The photodiode is insulated by the device isolating layer protruding from the semiconductor substrate to prevent the dark current. By forming the spacer on the sidewall of the device isolating layer to attain total reflection, efficiency of light incident to the photodiode is improved.
    • 根据图像传感器及其制造方法,能够防止由器件隔离层的界面的结晶缺陷引起的暗电流。 与设置在半导体衬底的上表面上的光电二极管相邻的第一器件隔离层从半导体衬底突出。 第一器件隔离层的侧表面被折射率大于第一器件隔离层的折射率的第一隔离物覆盖。 光电二极管被从半导体衬底突出的器件隔离层绝缘,以防止暗电流。 通过在器件隔离层的侧壁上形成间隔物以获得全反射,提高了入射到光电二极管的光的效率。