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    • 3. 发明授权
    • Nitride-based semiconductor light emitting device
    • 基于氮化物的半导体发光器件
    • US08174035B2
    • 2012-05-08
    • US12836090
    • 2010-07-14
    • Takamichi SumitomoMasaki UenoTakashi KyonoYohei EnyaYusuke Yoshizumi
    • Takamichi SumitomoMasaki UenoTakashi KyonoYohei EnyaYusuke Yoshizumi
    • H01L33/00
    • H01L33/16B82Y20/00H01L33/0075H01L33/14H01L33/32H01L33/40H01S5/0421H01S5/3202H01S5/343H01S5/34333
    • An object is to provide a nitride-based semiconductor light emitting device capable of preventing a Schottky barrier from being formed at an interface between a contact layer and an electrode. LD 1 is provided as a nitride-based semiconductor light emitting device provided with a GaN substrate 3, a hexagonal GaN-based semiconductor region 5 provided on a primary surface S1 of the GaN substrate 3 and including a light emitting layer 11, and a p-electrode 21 provided on the GaN-based semiconductor region 5 and comprised of metal. The GaN-based semiconductor region 5 includes a contact layer 17 involving strain, the contact layer 17 is in contact with the p-electrode, the primary surface S1 extends along a reference plane S5 inclined at a predetermined inclination angle θ from a plane perpendicular to the c-axis direction of the GaN substrate 3, and the inclination angle θ is either in the range of more than 40° and less than 90° or in the range of not less than 150° and less than 180°. The GaN-based semiconductor region 5 is lattice-matched with the GaN substrate 3.
    • 目的是提供一种能够防止在接触层和电极之间的界面处形成肖特基势垒的氮化物系半导体发光元件。 提供LD1作为氮化物系半导体发光器件,其具备设置在GaN衬底3的主表面S1上且包括发光层11的GaN衬底3,六方晶系GaN基半导体区域5和p - 电极21,其设置在GaN基半导体区域5上并且由金属构成。 GaN基半导体区域5包括涉及应变的接触层17,接触层17与p电极接触,主表面S1沿着以预定倾斜角度倾斜的参考平面S5延伸; 从垂直于GaN衬底3的c轴方向的平面以及倾斜角度; 在大于40°且小于90°的范围内或在不小于150°且小于180°的范围内。 GaN基半导体区域5与GaN衬底3晶格匹配。
    • 6. 发明授权
    • Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device
    • III族氮化物半导体激光器件及III族氮化物半导体激光器件的制造方法
    • US08306082B2
    • 2012-11-06
    • US12846361
    • 2010-07-29
    • Yusuke YoshizumiYohei EnyaTakashi KyonoMasahiro AdachiKatsushi AkitaMasaki UenoTakamichi SumitomoShinji TokuyamaKoji KatayamaTakao NakamuraTakatoshi Ikegami
    • Yusuke YoshizumiYohei EnyaTakashi KyonoMasahiro AdachiKatsushi AkitaMasaki UenoTakamichi SumitomoShinji TokuyamaKoji KatayamaTakao NakamuraTakatoshi Ikegami
    • H01S5/00
    • H01S5/34333B82Y20/00H01L21/02389H01L21/02433H01S5/0014H01S5/0021H01S5/0202H01S5/2009H01S5/3202H01S5/3211
    • A group-III nitride semiconductor laser device comprises a laser structure including a support base and a semiconductor region, and an electrode provided on the semiconductor region of the laser structure. The support base comprises a hexagonal group-III nitride semiconductor and has a semipolar primary surface, and the semiconductor region is provided on the semipolar primary surface of the support base. The semiconductor region includes a first cladding layer of a first conductivity type gallium nitride-based semiconductor, a second cladding layer of a second conductivity type gallium nitride-based semiconductor, and an active layer. The first cladding layer, the second cladding layer, and the active layer are arranged along a normal axis to the semipolar primary surface. The active layer comprises a gallium nitride-based semiconductor layer. The c-axis of the hexagonal group-III nitride semiconductor of the support base tilts at a finite angle ALPHA with respect to a normal axis toward an a-axis of the hexagonal group-III nitride semiconductor. The laser structure includes first and second fractured faces intersecting with an a-n plane defined by the normal axis and the a-axis of the hexagonal group-III nitride semiconductor. The laser cavity of the group-III nitride semiconductor laser device includes the first and second fractured faces. The laser structure includes first and second surfaces and the first surface is opposite to the second surface, and each of the first and second fractured faces extends from an edge of the first surface to an edge of the second surface.
    • III族氮化物半导体激光器件包括具有支撑基极和半导体区域的激光器结构以及设置在激光器结构的半导体区域上的电极。 支撑基底包括六方晶III族氮化物半导体,并且具有半极性主表面,并且半导体区域设置在支撑基底的半极性主表面上。 半导体区域包括第一导电型氮化镓基半导体的第一包覆层,第二导电型氮化镓基半导体的第二包覆层和有源层。 第一包层,第二包覆层和有源层沿着正交轴线配置到半极性主表面。 有源层包括氮化镓基半导体层。 支撑基座的六角形III族氮化物半导体的c轴相对于六边形III族氮化物半导体的a轴的法线轴线以有限角度ALPHA倾斜。 激光结构包括与由六角形III族氮化物半导体的法线轴和a轴限定的a-n平面相交的第一和第二断裂面。 III族氮化物半导体激光器件的激光腔包括第一和第二断裂面。 激光结构包括第一表面和第二表面,并且第一表面与第二表面相对,并且第一和第二断裂面中的每一个从第一表面的边缘延伸到第二表面的边缘。
    • 7. 发明授权
    • Gallium nitride-based semiconductor laser diode
    • 氮化镓基半导体激光二极管
    • US08284811B2
    • 2012-10-09
    • US12837143
    • 2010-07-15
    • Takamichi SumitomoYohei EnyaYusuke YoshizumiMasaki UenoKatsushi AkitaTakashi Kyono
    • Takamichi SumitomoYohei EnyaYusuke YoshizumiMasaki UenoKatsushi AkitaTakashi Kyono
    • H01S5/00
    • H01S5/34333B82Y20/00H01S5/2004H01S5/2009H01S5/3202H01S2302/00
    • Provided is a III-nitride semiconductor laser diode capable of lasing to emit light of not less than 500 nm with use of a semipolar plane. Since an active layer 29 is provided so as to generate light at the wavelength of not less than 500 nm, the wavelength of light to be confined into a core semiconductor region 19 is a long wavelength. A first optical guide layer 27 is provided with a two-layer structure, and a second optical guide layer 31 is provided with a two-layer structure. A material of a cladding layer 21 comprised of at least either of AlGaN and InAlGaN is different from the III-nitride semiconductor, and the thickness D15 of a first epitaxial semiconductor region 15 is larger than the thickness D19 of the core semiconductor region 19; however, the misfit dislocation densities at first to third interfaces J1, J2 and J3 are not more than 1×106 cm−1, thereby preventing lattice relaxation from occurring in the semiconductor layers at these interfaces J1, J2 and J3 because of the c-plane that acts as a slip plane.
    • 提供了能够利用半极性平面发光的不少于500nm的光的III族氮化物半导体激光二极管。 由于设置有源层29以产生波长不小于500nm的光,所以被限制在芯半导体区域19中的光的波长是长波长。 第一光导层27设置有两层结构,第二光导层31设置有两层结构。 由AlGaN和InAlGaN中的至少一个组成的包覆层21的材料与III族氮化物半导体不同,第一外延半导体区域15的厚度D15大于芯半导体区域19的厚度D19; 然而,第一至第三界面J1,J2和J3处的失配位错密度不大于1×106cm-1,从而防止在这些界面J1,J2和J3处的半导体层中发生晶格弛豫,因为c- 作为滑行平面的飞机。
    • 8. 发明授权
    • Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device
    • III族氮化物半导体器件,外延衬底以及III族氮化物半导体器件的制造方法
    • US08207544B2
    • 2012-06-26
    • US12836144
    • 2010-07-14
    • Yohei EnyaYusuke YoshizumiTakashi KyonoTakamichi SumitomoKatsushi AkitaMasaki UenoTakao Nakamura
    • Yohei EnyaYusuke YoshizumiTakashi KyonoTakamichi SumitomoKatsushi AkitaMasaki UenoTakao Nakamura
    • H01L33/00H01L29/04
    • H01L21/02458B82Y20/00H01L21/02389H01L21/02433H01L21/0254H01S5/3202H01S5/34333H01S2302/00
    • A III-nitride semiconductor device has a support base comprised of a III-nitride semiconductor and having a primary surface extending along a first reference plane perpendicular to a reference axis inclined at a predetermined angle ALPHA with respect to the c-axis of the III-nitride semiconductor, and an epitaxial semiconductor region provided on the primary surface of the support base. The epitaxial semiconductor region includes a plurality of GaN-based semiconductor layers. The reference axis is inclined at a first angle ALPHA1 in the range of not less than 10 degrees, and less than 80 degrees from the c-axis of the III-nitride semiconductor toward a first crystal axis, either one of the m-axis and a-axis. The reference axis is inclined at a second angle ALPHA2 in the range of not less than −0.30 degrees and not more than +0.30 degrees from the c-axis of the III-nitride semiconductor toward a second crystal axis, the other of the m-axis and a-axis. The predetermined angle, the first angle, and the second angle have a relation of ALPHA=(ALPHA12+ALPHA22)1/2. Morphology of an outermost surface of the epitaxial semiconductor region includes a plurality of pits. A pit density of the pits is not more than 5×104 cm−2.
    • III族氮化物半导体器件具有由III族氮化物半导体构成的支撑基底,具有主要表面沿垂直于相对于III型氮化物半导体的c轴倾斜预定角度ALPHA的参考轴线的第一参考平面延伸, 氮化物半导体,以及设置在支撑基体的主表面上的外延半导体区域。 外延半导体区域包括多个GaN基半导体层。 基准轴在距离III族氮化物半导体的c轴朝向第一晶轴不小于10度且小于80度的范围内以第一角度ALPHA1倾斜,m轴和 a轴。 参考轴在距离III族氮化物半导体的c轴朝向第二晶轴不小于-0.30度且不大于+0.30度的范围内以第二角度ALPHA2倾斜,另一个m- 轴和a轴。 预定角度,第一角度和第二角度具有ALPHA =(ALPHA12 + ALPHA22)1/2的关系。 外延半导体区域的最外表面的形态包括多个凹坑。 坑的坑密度不大于5×104cm-2。
    • 9. 发明申请
    • NITRIDE-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE
    • 基于氮化物的半导体发光器件
    • US20110227035A1
    • 2011-09-22
    • US12999987
    • 2010-06-14
    • Takashi KyonoYohei EnyaYusuke YoshizumiKatsushi AkitaTakamichi SumitomoMasaki Ueno
    • Takashi KyonoYohei EnyaYusuke YoshizumiKatsushi AkitaTakamichi SumitomoMasaki Ueno
    • H01L33/04
    • H01L33/04H01L33/12
    • Provided is a nitride-based semiconductor light-emitting element having improved carrier injection efficiency into the well layer. The element comprises a substrate (5) formed from a hexagonal-crystal gallium nitride semiconductor; an n-type gallium nitride semiconductor region (7) disposed on a main surface (S1) of the substrate (5); a light-emitting layer (11) having a single quantum well structure disposed on the n-type gallium nitride semiconductor region (7); and a p-type gallium nitride semiconductor region (19) disposed on the light-emitting layer (11). The light-emitting layer (11) is disposed between the n-type gallium nitride semiconductor region (7) and the p-type gallium nitride semiconductor region (19). The light-emitting layer (11) comprises a well layer (15), a barrier layer (13), and a barrier layer (17). The well layer (15) is InGaN. The main surface (S1) extends, from a surface perpendicular to the c axial direction of the hexagonal-crystal gallium nitride semiconductor, along a reference plane (S5) inclined at an angle of inclination within a range between 63° and 80° or between 100° and 117°.
    • 提供了一种具有提高到阱层的载流子注入效率的氮化物基半导体发光元件。 元件包括由六方晶系氮化镓半导体形成的基板(5) 设置在所述基板(5)的主表面(S1)上的n型氮化镓半导体区域(7)。 具有设置在n型氮化镓半导体区域(7)上的单量子阱结构的发光层(11); 和设置在发光层(11)上的p型氮化镓半导体区域(19)。 发光层(11)设置在n型氮化镓半导体区域(7)和p型氮化镓半导体区域(19)之间。 发光层(11)包括阱层(15),阻挡层(13)和阻挡层(17)。 阱层(15)是InGaN。 主表面(S1)从垂直于六方晶系氮化镓半导体的c轴方向的表面沿着在63°至80°之间的范围内倾斜的参考平面(S5)延伸,或者在 100°和117°。