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1. 发明申请

US20070200056A1 ANTI-REFLECTION COATED IMAGE SENSOR AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：防反射涂层图像传感器及其制造方法
公开(公告)号：US20070200056A1
公开(公告)日：2007-08-30
申请号：US11627744
申请日：2007-01-26
申请人： Bum-suk Kim , Getman Alexander , Yun-ho Jang , Sae-young Kim , Jong-jin Lee , Yo-han Sun , Keun-chan Yuk
发明人： Bum-suk Kim , Getman Alexander , Yun-ho Jang , Sae-young Kim , Jong-jin Lee , Yo-han Sun , Keun-chan Yuk
IPC分类号： H01J3/14
CPC分类号： H01L27/14685 , H01L27/14621 , H01L27/14627
摘要： An image sensor coated with an anti-reflection material having a microlens provided on a semiconductor substrate, the microlens corresponding to a light receiving device formed in the semiconductor substrate wherein the image sensor includes a first layer coated on a surface of the microlens, and a second layer coated on the first layer, wherein the second layer has a smaller refractive index than the first layer.
摘要翻译：涂覆有具有设置在半导体衬底上的微透镜的防反射材料的图像传感器，所述微透镜对应于形成在所述半导体衬底中的光接收装置，其中所述图像传感器包括涂覆在所述微透镜的表面上的第一层，以及第二层涂覆在第一层上，其中第二层具有比第一层更小的折射率。

2. 发明申请

US20070257282A1 Image Sensor Applying Power Voltage to Backside of Semiconductor Substrate and Method of Manufacturing Image Sensor 审中-公开
标题翻译：图像传感器将电源电压施加到半导体基板的背面和制造图像传感器的方法
公开(公告)号：US20070257282A1
公开(公告)日：2007-11-08
申请号：US11672866
申请日：2007-02-08
申请人： Yo-han Sun , Jong-jin Lee , Bum-suk Kim , Yun-ho Jang , Sae-young Kim , Keun-chan Yuk , Getman Alexander
发明人： Yo-han Sun , Jong-jin Lee , Bum-suk Kim , Yun-ho Jang , Sae-young Kim , Keun-chan Yuk , Getman Alexander
IPC分类号： H01L27/148 , H01L21/339
CPC分类号： H01L27/14601 , H01L27/14687
摘要： An image sensor applying a power voltage to a backside of a semiconductor substrate includes a first type semiconductor substrate, a first type semiconductor layer formed on the first type semiconductor substrate, a second type semiconductor layer formed on the first type semiconductor layer, and a power voltage receiver formed on a backside of the first type semiconductor substrate opposite the first type semiconductor layer with respect to the first type semiconductor substrate, wherein the power voltage receiver receives a power voltage from outside and applies the power voltage to the first type semiconductor substrate.
摘要翻译：将电源电压施加到半导体衬底的背面的图像传感器包括第一类型半导体衬底，形成在第一类型半导体衬底上的第一类型半导体层，形成在第一类型半导体层上的第二类型半导体层，以及功率所述电压接收器相对于所述第一类型半导体衬底形成在与所述第一类型半导体层相对的所述第一类型半导体衬底的背面上，其中所述电力电压接收器从外部接收电力电压并将所述电力电压施加到所述第一类型半导体衬底。

3. 发明申请

US20080197388A1 Pixel structure of CMOS image sensor and method of forming the pixel structure 审中-公开
标题翻译： CMOS图像传感器的像素结构和形成像素结构的方法
公开(公告)号：US20080197388A1
公开(公告)日：2008-08-21
申请号：US12010809
申请日：2008-01-30
申请人： Jong-eun Park , Keun-chan Yuk
发明人： Jong-eun Park , Keun-chan Yuk
IPC分类号： H01L27/146 , H01L21/8234
CPC分类号： H01L27/1463 , H01L27/14603 , H01L27/14621 , H01L27/14689
摘要： Provided is a pixel structure of a CMOS image sensor. The pixel structure may include a semiconductor substrate, a photo diode, and a color filter. The photo diode may have a trench structure formed in the semiconductor substrate. The color filter may be formed in the trench structure. The color filter may be formed by filling a material in the trench structure using a gap-fill process. The material in the trench structure may transmit light having a wavelength within a predetermined or given range. Because the color filter of the pixel structure of the CMOS image sensor may be formed in the photo diode having the afore-mentioned trench structure, the height of the pixel may be decreased, and the efficiency of the output signal and the color sensitivity may be increased.
摘要翻译：提供了CMOS图像传感器的像素结构。像素结构可以包括半导体衬底，光电二极管和滤色器。光电二极管可以具有形成在半导体衬底中的沟槽结构。滤色器可以形成在沟槽结构中。滤色器可以通过使用间隙填充工艺填充沟槽结构中的材料来形成。沟槽结构中的材料可以将具有在预定或给定范围内的波长的光透射。由于CMOS图像传感器的像素结构的滤色器可以形成在具有上述沟槽结构的光电二极管中，因此可以降低像素的高度，并且输出信号的效率和色彩灵敏度可以是增加。

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