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    • 9. 发明授权
    • Simplified method of making merged MR head
    • 合并MR头的简化方法
    • US5435053A
    • 1995-07-25
    • US205006
    • 1994-03-02
    • Mohamad T. KrounbiJames H. Lee
    • Mohamad T. KrounbiJames H. Lee
    • G11B5/00G11B5/31G11B5/39G11B5/48G11B3/42
    • G11B5/3967G11B5/3116G11B5/312G11B5/313G11B5/3163G11B5/488G11B5/00Y10T29/49032Y10T29/49039Y10T29/49064
    • An improved method of manufacturing is provided for making an improved merged MR head. The method employs a photoresist mask with appropriately-sized openings for simultaneously etching numerous vias to various depths over a set time period. After formation of the vias, a single photoresist mask is employed to pattern in one step gap layers G3, G2, G1 and a first shield layer S1 to the desired lateral configuration for the merged MR head. Subsequent to patterning these thin film layers, double insulation layers I2 and I3 are individually soft baked on top of the coil structure of the head followed by patterning of the layers I2/I3 by a single photoresist mask. These layers are then hard baked to retain the desired smooth configuration of the layers. The improved merged MR head has a smooth configuration to its top pole piece P2 because of the smooth configuration of the I2/I3 layer so that flux leakage and saturation problems are minimized.
    • 提供了一种改进的制造方法,用于制造改进的合并MR头。 该方法采用具有适当大小的开口的光致抗蚀剂掩模,用于在设定的时间段内同时将多个通孔蚀刻到各种深度。 在形成通孔之后,使用单个光致抗蚀剂掩模将一级间隙层G3,G2,G1和第一屏蔽层S1图案化成用于合并的MR头的期望的横向配置。 在图案化这些薄膜层之后,双重绝缘层I2和I3在头部的线圈结构的顶部上单独软烘烤,然后通过单个光致抗蚀剂掩模图案化层I2 / I3。 然后将这些层硬烘烤以保持层的期望的平滑构型。 由于I2 / I3层的平滑配置,改进的合并MR磁头对其顶极片P2具有平滑的配置,使得磁通泄漏和饱和问题最小化。