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1. 发明申请

US20070159059A1 Anode plate for a field emission display device 审中-公开
公开(公告)号：US20070159059A1
公开(公告)日：2007-07-12
申请号：US11708018
申请日：2007-02-20
申请人： Ying-Hsien Chen , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
发明人： Ying-Hsien Chen , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
IPC分类号： H01J63/04 , H01J1/00 , H01J1/02
CPC分类号： H01J29/085 , B82Y10/00 , H01J29/925 , H01J31/123
摘要： An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.

2. 发明申请

US20050046335A1 Anode plate for a field emission display device 失效
标题翻译：用于场致发射显示装置的阳极板
公开(公告)号：US20050046335A1
公开(公告)日：2005-03-03
申请号：US10760384
申请日：2004-01-21
申请人： Ying-Hsien Chen , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
发明人： Ying-Hsien Chen , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
IPC分类号： H01J29/86 , H01J1/62 , H01J29/08 , H01J29/10 , H01J29/90 , H01J29/92 , H01J31/12 , H01J63/04
CPC分类号： H01J29/085 , B82Y10/00 , H01J29/925 , H01J31/123
摘要： An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.
摘要翻译：公开了一种用于场发射显示装置（FED）的阳极板，其具有基板; 形成在所述基板上的阳极导电层; 至少一个间隔导电带具有多个用于连接阳极导电层和外部电缆线的内部间隙，其中所述间隔导电带覆盖所述阳极导电层的一部分; 以及位于阳极导电层上的荧光层，用作场致发射显示装置的发光源。场发射显示装置包括如上所述的阳极板。

3. 发明授权

US07304424B2 Anode plate for a field emission display device 失效
标题翻译：用于场致发射显示装置的阳极板
公开(公告)号：US07304424B2
公开(公告)日：2007-12-04
申请号：US10760384
申请日：2004-01-21
申请人： Ying-Hsien Cheng , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
发明人： Ying-Hsien Cheng , Cheng-Chung Lee , Wen-Kuei Huang , Wei-Yi Lin , Jia-Chong Ho , Yu-Yang Chang , Ming-Chun Hsiao , Yun-Chiao Hsiao
IPC分类号： H01J29/90
CPC分类号： H01J29/085 , B82Y10/00 , H01J29/925 , H01J31/123
摘要： An anode plate for a field emission display device (FED) is disclosed, which has a substrate; an anode conductive layer formed on the substrate; at least one interspacing conductive band having a plurality of internal gaps for connecting the anode conductive layer and external cable lines, wherein the interspacing conductive band covers a part of the anode conductive layer; and a fluorescent layer located on the anode conductive layer, to serve as a source of luminescence for a field emission display device. The field emission display device includes the anode plate aforesaid as is also disclosed.
摘要翻译：公开了一种用于场发射显示装置（FED）的阳极板，其具有基板; 形成在所述基板上的阳极导电层; 至少一个间隔导电带具有多个用于连接阳极导电层和外部电缆线的内部间隙，其中所述间隔导电带覆盖所述阳极导电层的一部分; 以及位于阳极导电层上的荧光层，用作场致发射显示装置的发光源。场发射显示装置包括如上所述的阳极板。

4. 发明申请

US20080035918A1 Organic thin-film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20080035918A1
公开(公告)日：2008-02-14
申请号：US11878907
申请日：2007-07-27
申请人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
发明人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
IPC分类号： H01L51/10
CPC分类号： H01L51/0022 , H01L51/0545 , H01L51/055 , H01L51/0558
摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
摘要翻译：对有机薄膜晶体管及其制造方法进行说明。该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。在半导体层上丝网印刷电极层，在电极层上涂布钝化层。通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

5. 发明授权

US07264989B2 Organic thin-film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07264989B2
公开(公告)日：2007-09-04
申请号：US10840637
申请日：2004-05-07
申请人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
发明人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
IPC分类号： H01L51/40 , H01L21/84
CPC分类号： H01L51/0022 , H01L51/0545 , H01L51/055 , H01L51/0558
摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
摘要翻译：对有机薄膜晶体管及其制造方法进行说明。该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。在半导体层上丝网印刷电极层，在电极层上涂布钝化层。通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

6. 发明授权

US07125742B2 Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same 有权
标题翻译：用于有机薄膜晶体管的多钝化层结构及其制造方法
公开(公告)号：US07125742B2
公开(公告)日：2006-10-24
申请号：US10863212
申请日：2004-06-09
申请人： Cheng-Chung Hsieh , Jia-Chong Ho , Tarng-Shiang Hu , Cheng-Chung Lee , Liang-Ying Huang , Wei-Ling Lin , Wen-Kuei Huang
发明人： Cheng-Chung Hsieh , Jia-Chong Ho , Tarng-Shiang Hu , Cheng-Chung Lee , Liang-Ying Huang , Wei-Ling Lin , Wen-Kuei Huang
IPC分类号： H01L51/40 , H01L29/08 , H01L35/24 , H01L51/00 , H01L31/062
CPC分类号： H01L51/107 , H01L51/0545 , H01L51/5237
摘要： The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.
摘要翻译：本发明公开了一种有机薄膜晶体管的多钝化层结构及其制造方法，其特征在于，在有机薄膜晶体管上进行旋涂，注入印刷，丝网印刷和微接触。一种有机薄膜晶体管的多钝化层结构，包括：基板; 形成在所述基板上的栅极层; 形成在所述基板和所述栅极层上的绝缘体层; 形成在所述绝缘体层上的电极层; 形成在绝缘体层和电极层上的半导体层; 以及形成在半导体层和电极层上的钝化层，从而形成有机薄膜晶体管的多钝化层结构。

7. 发明授权

US07495253B2 Organic thin-film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US07495253B2
公开(公告)日：2009-02-24
申请号：US11878907
申请日：2007-07-27
申请人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
发明人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
IPC分类号： H01L51/10
CPC分类号： H01L51/0022 , H01L51/0545 , H01L51/055 , H01L51/0558
摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
摘要翻译：对有机薄膜晶体管及其制造方法进行说明。该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。在半导体层上丝网印刷电极层，在电极层上涂布钝化层。通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

8. 发明申请

US20050227407A1 Multi-passivation layer structure for organic thin-film transistors and method for fabricating the same 有权
标题翻译：用于有机薄膜晶体管的多钝化层结构及其制造方法
公开(公告)号：US20050227407A1
公开(公告)日：2005-10-13
申请号：US10863212
申请日：2004-06-09
申请人： Cheng-Chung Hsieh , Jia-Chong Ho , Tarng-Shiang Hu , Cheng-Chung Lee , Liang-Ying Huang , Wei-Ling Lin , Wen-Kuei Huang
发明人： Cheng-Chung Hsieh , Jia-Chong Ho , Tarng-Shiang Hu , Cheng-Chung Lee , Liang-Ying Huang , Wei-Ling Lin , Wen-Kuei Huang
IPC分类号： H01L29/786 , H01L21/312 , H01L21/336 , H01L51/05 , H01L51/10 , H01L51/40 , H01L51/52
CPC分类号： H01L51/107 , H01L51/0545 , H01L51/5237
摘要： The present invention discloses a multi-passivation layer structure for organic thin-film transistors and a method for fabricating the same by spin coating, inject printing, screen printing and micro-contact on organic thin-film transistors. The multi-passivation layer structure for organic thin-film transistors, comprising: a substrate; a gate layer formed on the substrate; an insulator layer formed on the substrate and the gate layer; an electrode layer formed on the insulator layer; a semiconductor layer formed on the insulator layer and the electrode layer; and a passivation layer formed on the semiconductor layer and the electrode layer, thereby forming a multi-passivation layer structure for organic thin-film transistors.
摘要翻译：本发明公开了一种有机薄膜晶体管的多钝化层结构及其制造方法，其特征在于，在有机薄膜晶体管上进行旋涂，注入印刷，丝网印刷和微接触。一种有机薄膜晶体管的多钝化层结构，包括：基板; 形成在所述基板上的栅极层; 形成在所述基板和所述栅极层上的绝缘体层; 形成在所述绝缘体层上的电极层; 形成在绝缘体层和电极层上的半导体层; 以及形成在半导体层和电极层上的钝化层，从而形成有机薄膜晶体管的多钝化层结构。

9. 发明申请

US20050194615A1 Organic thin-film transistor and method for manufacturing the same 有权
标题翻译：有机薄膜晶体管及其制造方法
公开(公告)号：US20050194615A1
公开(公告)日：2005-09-08
申请号：US10840637
申请日：2004-05-07
申请人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
发明人： Liang-Ying Huang , Jia-Chong Ho , Cheng-Chung Lee , Tarng-Shiang Hu , Wen-Kuei Huang , Wei-Ling Lin , Cheng-Chung Hsieh
IPC分类号： H01L29/417 , H01L21/336 , H01L29/745 , H01L29/786 , H01L51/00 , H01L51/05 , H01L51/40
CPC分类号： H01L51/0022 , H01L51/0545 , H01L51/055 , H01L51/0558
摘要： An organic thin-film transistor and a method for manufacturing the same are described. The method forms a gate layer on a substrate, an insulator layer on the substrate, forming a semiconductor layer on the insulator layer, and a strip for defining a channel length on the semiconductor layer. An electrode layer is screen printed on the semiconductor layer, and a passivation layer is coated on the electrode layer. The organic thin-film transistor manufactured by the method of the invention has a substrate, a gate layer formed on the substrate, an insulator layer formed on the substrate, a semiconductor layer formed on the insulator layer, a strip for defining a channel length formed on the semiconductor layer, an electrode layer screen-printed on the semiconductor layer, and a passivation layer coated on the electrode layer. Thereby, an organic thin-film transistor with a top-contact/bottom-gate structure is obtained.
摘要翻译：对有机薄膜晶体管及其制造方法进行说明。该方法在衬底上形成栅极层，在衬底上形成绝缘体层，在绝缘体层上形成半导体层，以及在半导体层上限定沟道长度的条带。在半导体层上丝网印刷电极层，在电极层上涂布钝化层。通过本发明的方法制造的有机薄膜晶体管具有基板，形成在基板上的栅极层，形成在基板上的绝缘体层，形成在绝缘体层上的半导体层，形成用于限定沟道长度的条带在半导体层上，丝网印刷在半导体层上的电极层和涂覆在电极层上的钝化层。由此，得到具有顶接触/底栅结构的有机薄膜晶体管。

10. 发明申请

US20050221530A1 Method for enhancing electrical characteristics of organic electronic devices 审中-公开
标题翻译：提高有机电子器件电气特性的方法
公开(公告)号：US20050221530A1
公开(公告)日：2005-10-06
申请号：US10879168
申请日：2004-06-30
申请人： Hsiang-Yuan Cheng , Jia-Chong Ho , Wen-Kuei Huang
发明人： Hsiang-Yuan Cheng , Jia-Chong Ho , Wen-Kuei Huang
IPC分类号： H01L51/05 , H01L21/00 , H01L29/786 , H01L51/00 , H05B33/20
CPC分类号： B82Y30/00 , B82Y10/00 , B82Y20/00 , H01L51/0003 , H01L51/0036 , H01L51/0046 , H01L51/0545 , H01L2251/5369
摘要： The present invention provides a method for enhancing electrical characteristics of organic electronic devices, especially for an organic thin-film transistors, comprising the steps of: providing a substrate with a gate and an insulator layer formed thereon; preparing an organic solution by mixing materials of an organic semiconductor polymer, an organic insulator polymer, a conducting particle and a solvent; forming an organic semiconductor layer on top of the insulator layer between the source and the drain using the organic solvent. Wherein, the organic semiconductor polymer can be a polymer selected from the group consisting of poly(3-alkylthiophene) (P3AT) with different alkyl side groups of 2, 4, 6, 8, 10, 12, and 18, as the P3HT is a P3AT with alkyl side group of 6, and the organic insulator polymer can be a polymer selected from the group consisting of poly(methylmethacrylate) (PMMA), and polybutylene terephthalate (PBT), etc. and the conducting particle can be a kind of particle selected from the group consisting of carbon nanotubes (CNTs), C60, and nano silver particle, and so on, and the solvent can be a solvent selected from the group consisting of xylene, toluene, and THF, and so forth.
摘要翻译：本发明提供一种用于增强有机电子器件特别是有机薄膜晶体管的电特性的方法，包括以下步骤：提供基板，其上形成有栅极和绝缘体层; 通过混合有机半导体聚合物，有机绝缘体聚合物，导电颗粒和溶剂的材料制备有机溶液; 使用有机溶剂在源极和漏极之间的绝缘体层的顶部上形成有机半导体层。其中，有机半导体聚合物可以是选自具有2,4,6,8,10,12和18的不同烷基侧基的聚（3-烷基噻吩）（P3AT）作为P3HT的聚合物具有烷基侧基的P3AT，有机绝缘体聚合物可以是选自聚（甲基丙烯酸甲酯）（PMMA）和聚对苯二甲酸丁二醇酯（PBT）等的聚合物，并且导电颗粒可以是一种选自由碳纳米管（CNT），C 60 S和纳米银颗粒组成的组的颗粒，等等，溶剂可以是选自二甲苯，甲苯和 THF等。

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