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1. 发明申请

US20060183308A1 Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gases additions 失效
标题翻译：使用含碳气体添加剂蚀刻双预掺杂多晶硅栅极叠层的方法
公开(公告)号：US20060183308A1
公开(公告)日：2006-08-17
申请号：US10730891
申请日：2003-12-10
申请人： Ying Zhang , Timothy Dalton , Wesley Natzle
发明人： Ying Zhang , Timothy Dalton , Wesley Natzle
IPC分类号： H01L21/28 , H01L21/44
CPC分类号： H01L21/28123 , H01L21/32137 , H01L21/32139
摘要： A method for making dual pre-doped gate stacks used in semiconductor applications such as complementary metal oxide semiconductor (CMOS) devices and metal oxide semiconductor field effect transistors (MOSFETs) is provided. The method involves providing at least one pre-doped conductive layer, such as poly silicon (poly-Si), on a gate stack and etching by exposing the conductive layer to an etching composition comprising at least one carbon containing gas. The carbon containing gas can be selected from gases having the general formula CxHy, such as, for example, CH4, C2H2, C2H4, and C2H6. The carbon containing gas can further be selected from gases having the general formula CxHyA, wherein a can represent one or more additional substituents selected from O, N, P, S, F, Cl, Br, and I. The processes can result in dual pre-doped gate stacks having essentially vertical sidewalls and further having a width of at least about 3 nm, such as from about 5 nm to about 150 nm.
摘要翻译：提供了在半导体应用中使用诸如互补金属氧化物半导体（CMOS）器件和金属氧化物半导体场效应晶体管（MOSFET）的双预预掺杂栅叠层的方法。该方法包括在栅叠层上提供至少一个预先掺杂的导电层，例如多晶硅（poly-Si），以及通过将导电层暴露于含有至少一种含碳气体的蚀刻组合物进行蚀刻。含碳气体可以选自具有通式C x H H y H的气体，例如CH 4，C 3， H 2 H 2，C 2 H 4，和C 2 H 2， 6 。含碳气体还可以选自具有通式C x H A A A的气体，其中a可以表示一个或多个选自O，N，P ，S，F，Cl，Br和I.该工艺可以导致具有基本上垂直的侧壁并且还具有至少约3nm，例如约5nm至约150nm的宽度的双预掺杂栅叠层。

2. 发明申请

US20060166416A1 ADDITION OF BALLAST HYDROCARBON GAS TO DOPED POLYSILICON ETCH MASKED BY RESIST 审中-公开
标题翻译：添加沉积物中的多氯硅烷蚀刻阻垢剂
公开(公告)号：US20060166416A1
公开(公告)日：2006-07-27
申请号：US10905938
申请日：2005-01-27
申请人： Timothy Dalton , Wesley Natzle , Paul Pastel , Richard Wise , Hongwen Yan , Ying Zhang
发明人： Timothy Dalton , Wesley Natzle , Paul Pastel , Richard Wise , Hongwen Yan , Ying Zhang
IPC分类号： H01L21/00 , H01L21/84
CPC分类号： H01L21/32139 , H01L21/32137 , Y10S438/909
摘要： A chemical composition and method for providing uniform and consistent etching of gate stacks on a semiconductor wafer, whereby the composition includes an etchant and an added ballast gas added. The gate stacks are formed using this combined etchant and ballast gas composition. The ballast gas may either be similar to, or the equivalent of, a gaseous byproduct generated within the processing chamber. The ballast gas is added in either an overload amount, or in an amount sufficient to compensate for varying pattern factor changes across the water. This etchant and added ballast gas form a substantially homogeneous etchant across the entire wafer, thereby accommodating for or compensating for these pattern factor differences. When etching the wafer using this homogeneous etchant, a passivation layer is formed on exposed wafer surfaces. The passivation layer protects the lateral sidewalls of the gate stacks during etch to result in straighter gate stacks.
摘要翻译：一种用于在半导体晶片上提供均匀且一致的栅叠层蚀刻的化学组成和方法，由此所述组合物包括添加的蚀刻剂和添加的压载气体。使用这种组合的蚀刻剂和压载气组合物形成栅堆叠。压载气体可以类似于或等同于在处理室内产生的气态副产物。压载气体以过载量或足以补偿横跨水的变化因子变化的量加入。这种蚀刻剂和添加的压载气体在整个晶片上形成基本均匀的蚀刻剂，从而适应或补偿这些图案因子差异。当使用这种均匀的蚀刻剂蚀刻晶片时，在暴露的晶片表面上形成钝化层。钝化层在蚀刻期间保护栅极堆叠的侧壁以产生更直的栅叠层。

3. 发明授权

US07344965B2 Method of etching dual pre-doped polysilicon gate stacks using carbon-containing gaseous additions 失效
标题翻译：使用含碳气体添加剂蚀刻双重预掺杂多晶硅栅极叠层的方法
公开(公告)号：US07344965B2
公开(公告)日：2008-03-18
申请号：US10730891
申请日：2003-12-10
申请人： Ying Zhang , Timothy Joseph Dalton , Wesley Natzle
发明人： Ying Zhang , Timothy Joseph Dalton , Wesley Natzle
IPC分类号： H01L21/3205 , H01L21/4763
CPC分类号： H01L21/28123 , H01L21/32137 , H01L21/32139
摘要： A method for making dual pre-doped gate stacks used in semiconductor applications such as complementary metal oxide semiconductor (CMOS) devices and metal oxide semiconductor field effect transistors (MOSFETs) is provided. The method involves providing at least one pre-doped conductive layer, such as poly silicon (poly-Si), on a gate stack and etching by exposing the conductive layer to an etching composition comprising at least one carbon containing gas. The carbon containing gas can be selected from gases having the general formula CxHy, such as, for example, CH4, C2H2, C2H4, and C2H6. The carbon containing gas can further be selected from gases having the general formula CxHyA, wherein A can represent one or more additional substituents selected from O, N, P, S, F, Cl, Br, and I. The processes can result in dual pre-doped gate stacks having essentially vertical sidewalls and further having a width of at least about 3 nm, such as from about 5 nm to about 150 nm.
摘要翻译：提供了在半导体应用中使用诸如互补金属氧化物半导体（CMOS）器件和金属氧化物半导体场效应晶体管（MOSFET）的双预预掺杂栅叠层的方法。该方法包括在栅叠层上提供至少一个预先掺杂的导电层，例如多晶硅（poly-Si），以及通过将导电层暴露于含有至少一种含碳气体的蚀刻组合物进行蚀刻。含碳气体可以选自具有通式C x H H y H的气体，例如CH 4，C 3， H 2 H 2，C 2 H 4，和C 2 H 2， 6 。含碳气体可以进一步选自具有通式C x H A A A的气体，其中A可以表示一个或多个选自O，N，P ，S，F，Cl，Br和I.该工艺可以导致具有基本垂直侧壁并且还具有至少约3nm（例如约5nm至约150nm）的宽度的双预掺杂栅叠层。

4. 发明申请

US20200165340A1 ANTI-PROGRAMMED DEATH-LIGAND 1 (PD-L1) ANTIBODIES AND THERAPEUTIC USES THEREOF 审中-公开
公开(公告)号：US20200165340A1
公开(公告)日：2020-05-28
申请号：US16486150
申请日：2017-02-16
申请人： Ying Zhang , Xiangtan Tenghua Bioscience
发明人： Ying Zhang
IPC分类号： C07K16/28 , A61K39/395 , A61P35/00 , A61K31/454
摘要： Anti-programmed death-ligand 1 (PD-L1) antibodies, methods of using the same, therapeutic compositions thereof, and uses thereof in upregulating cell-mediated immune responses and treating T cell dysfunctional disorders are provided. The use of the anti-PD-L1 antibody as a diagnostic agent in vitro is also provided.

5. 发明申请

US20200062847A1 RECOMBINANT ANTIBODIES TO PROGRAMMED DEATH 1 (PD-1) AND USES THEREFOR 审中-公开
公开(公告)号：US20200062847A1
公开(公告)日：2020-02-27
申请号：US16488667
申请日：2017-03-04
申请人： Ying ZHANG , Xiangtan Tenghua Bioscience
发明人： Ying Zhang
IPC分类号： C07K16/28
摘要： Provided are monoclonal antibody, particularly rabbit recombinant antibody, which specifically binds to human PD-1 with biological functions and super high affinity, and methods of use. In various embodiments, the antibodies are fully humanized antibodies that bind to human PD-1. Nucleic acid molecules encoding the antibodies and methods for expressing the antibodies are also provided. In some embodiments, the antibodies are useful for inhibiting or neutralizing PD-1 activity, thus providing a means of treating, preventing and/or diagnosing a disease or disorder such as cancer or a viral infection.

6. 发明授权

US09472444B2 Wafer support device 有权
标题翻译：晶圆支撑装置
公开(公告)号：US09472444B2
公开(公告)日：2016-10-18
申请号：US13593479
申请日：2012-08-23
申请人： Tien-Chih Cheng , Ying Zhang , Shu-Huei Suen , Chen-Chiao Kao
发明人： Tien-Chih Cheng , Ying Zhang , Shu-Huei Suen , Chen-Chiao Kao
IPC分类号： B05C13/00 , B23B31/28 , B05D1/02 , B05C11/00 , B05D3/12 , H01L21/687
CPC分类号： H01L21/6875 , B05B13/02 , B05B15/00 , B24B7/228 , H01L21/6833 , H01L21/68757 , Y10T279/23
摘要： A wafer support device is provided. The wafer support device includes a plurality of support portions; and a bottom area located among the support portions, wherein the bottom area has a protective layer formed thereon. A method for processing a working surface of a wafer support device is also provided.
摘要翻译：提供了晶片支撑装置。晶片支撑装置包括多个支撑部分; 以及位于支撑部之间的底部区域，其中底部区域具有形成在其上的保护层。还提供了一种用于处理晶片支撑装置的工作表面的方法。

7. 发明授权

US09150472B2 Method and composition for inhibiting asphaltene deposition in a hydrocarbon mixture 有权
标题翻译：抑制烃混合物中沥青质沉积的方法和组合物
公开(公告)号：US09150472B2
公开(公告)日：2015-10-06
申请号：US14366828
申请日：2012-12-17
申请人： Zhongxin Huo , Timothy Michael Shea , Cornelis Antonius Theodorus Kuijvenhoven , Ying Zhang
发明人： Zhongxin Huo , Timothy Michael Shea , Cornelis Antonius Theodorus Kuijvenhoven , Ying Zhang
IPC分类号： C10G75/04 , C07C7/20 , C09K8/524 , E21B43/25
CPC分类号： C07C7/20 , C09K8/524 , C10G75/04 , E21B43/25
摘要： A method of inhibiting the deposition of asphaltene in a mixture comprising hydrocarbons, the method comprising contacting the mixture with a composition which comprises at least one poly(hydroxycarboxylic acid) amide salt derivative.
摘要翻译：一种抑制沥青质沉积在包含烃的混合物中的方法，该方法包括使混合物与包含至少一种聚（羟基羧酸）酰胺盐衍生物的组合物接触。

8. 发明授权

US09013995B2 Congestion control in packet data networking 有权
公开(公告)号：US09013995B2
公开(公告)日：2015-04-21
申请号：US13464182
申请日：2012-05-04
申请人： Neda Beheshti-Zavareh , Ying Zhang
发明人： Neda Beheshti-Zavareh , Ying Zhang
IPC分类号： H04L12/26 , H04L12/801 , H04L12/815 , H04L12/891
CPC分类号： H04L47/12 , H04L43/062 , H04L43/0882 , H04L47/115 , H04L47/22 , H04L47/41 , Y02D50/30
摘要： A network element controls congestion in a link of a packet data network. A congested link is identified and a throttle rate is determined for one or more of the traffic groups traversing the congested link. The central controller determines the throttle rates using a weight of the group and the current traffic rate of the group through the link. The throttle rates are sent to switches to throttle traffic for each affected group.

9. 发明授权

US08999794B2 Self-aligned source and drain structures and method of manufacturing same 有权
标题翻译：自对准源极和漏极结构及其制造方法
公开(公告)号：US08999794B2
公开(公告)日：2015-04-07
申请号：US13183043
申请日：2011-07-14
申请人： Ziwei Fang , Ying Zhang , Jeff J. Xu
发明人： Ziwei Fang , Ying Zhang , Jeff J. Xu
IPC分类号： H01L21/336 , H01L21/306 , H01L21/8238 , H01L21/265 , H01L29/66 , H01L29/78 , H01L21/8234 , H01L21/3065
CPC分类号： H01L21/30617 , H01L21/26513 , H01L21/3065 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L29/66545 , H01L29/66628 , H01L29/66636 , H01L29/7848
摘要： An integrated circuit device and method for manufacturing the integrated circuit device are disclosed. In an example, the method includes forming a gate structure over a substrate; forming a doped region in the substrate; performing a first etching process to remove the doped region and form a trench in the substrate; and performing a second etching process that modifies the trench by removing portions of the substrate.
摘要翻译：公开了一种用于制造集成电路器件的集成电路器件和方法。在一个示例中，该方法包括在衬底上形成栅极结构; 在衬底中形成掺杂区域; 执行第一蚀刻工艺以去除掺杂区域并在衬底中形成沟槽; 以及执行通过去除衬底的部分来修改沟槽的第二蚀刻工艺。

10. 发明授权

US08982694B2 Localized congestion exposure 有权
标题翻译：本地化拥堵风险
公开(公告)号：US08982694B2
公开(公告)日：2015-03-17
申请号：US12976067
申请日：2010-12-22
申请人： Ying Zhang , Ingemar Johansson , Howard Green
发明人： Ying Zhang , Ingemar Johansson , Howard Green
IPC分类号： H04L12/26 , H04L12/825 , H04L12/801
CPC分类号： H04L47/2483 , H04L12/4633 , H04L47/115 , H04L47/12 , H04L47/127 , H04L47/14 , H04L47/22 , H04L47/26 , H04L47/32 , H04L61/2592 , H04W28/0231 , H04W28/0242 , H04W28/0284 , H04W28/0289 , H04W28/08 , H04W28/12 , H04W52/343 , H04W84/042
摘要： A method for localized congestion exposure within a local loop in a cellular network that is performed by a localized congestion exposure receiver node of the local loop. The method includes receiving downlink packets destined for a downstream user device. The downlink packets have headers that indicate a level of congestion experienced by the downlink packets. The headers also indicate a level of expected downstream congestion declared by an upstream node. The method also includes forwarding the downlink packets to the downstream user device through a wireless connection. The method further includes sending packets upstream that have feedback indicative of the level of congestion experienced by the downlink packets and any congestion experienced within the localized congestion exposure receiver node.
摘要翻译：一种在本地环路的本地拥塞暴露接收器节点执行的蜂窝网络中本地环路内的局部拥塞暴露的方法。该方法包括接收去往下游用户设备的下行链路分组。下行链路分组具有指示下行链路分组经历的拥塞的级别的报头。标头还指示由上游节点声明的预期下游拥塞的级别。该方法还包括通过无线连接将下行链路分组转发到下游用户设备。该方法还包括向上游发送具有指示下行链路分组经历的拥塞的级别以及局部拥塞暴露接收机节点内经历的任何拥塞的反馈的分组。

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