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1. 发明申请

US20060030095A1 Methods for elimination of arsenic based defects 有权
标题翻译：消除基于砷的缺陷的方法
公开(公告)号：US20060030095A1
公开(公告)日：2006-02-09
申请号：US10913214
申请日：2004-08-06
申请人： Yin-Min Goh , Simon Chooi , Teck Lim , Vincent Sih , Chian Sin , Ping Ee , Zainab Ismail , Cher Chua
发明人： Yin-Min Goh , Simon Chooi , Teck Lim , Vincent Sih , Chian Sin , Ping Ee , Zainab Ismail , Cher Chua
IPC分类号： H01L21/8238 , H01L21/4763
CPC分类号： H01L21/02057 , H01L21/02068 , H01L21/28518 , H01L21/76237 , H01L21/823814 , H01L21/823878 , H01L29/665 , H01L29/7833
摘要： Methods of preparing conductive regions such as source/drain regions for silicidation procedures, has been developed. The methods feature removal of native oxide as well as removal of deposited arsenic based defects from conductive surfaces prior to deposition of a metal component of subsequently formed metal silicide regions. Arsenic ions implanted for N type source/drain regions are also implanted into insulator regions such as insulator filled shallow trench isolation regions. A hydrofluoric acid cycle used as a component of the pre-silicidation preparation procedure can release arsenic from the shallow trench isolation regions in the form of arsenic based defects, which in turn can re-deposit on the surface of source/drain region. Therefore pre-silicidation preparation treatments described in this invention feature removal of both native oxide and arsenic based defects from conductive surfaces prior to metal silicide formation. Methods include wet etch procedures featuring hydrofluoric acid and hydrogen peroxide, as well as spin dry and dry etch procedures both employed post hydrofluoric acid treatment to remove re-deposited arsenic based defects.
摘要翻译：已经开发了制备用于硅化程序的源极/漏极区域的导电区域的方法。该方法在沉积随后形成的金属硅化物区域的金属组分之前，特征在于去除自然氧化物以及从导电表面去除沉积的基于砷的缺陷。注入用于N型源极/漏极区域的砷离子也被注入绝缘体区域，例如绝缘体填充的浅沟槽隔离区域。用作预硅化物制备方法的组分的氢氟酸循环可以以基于砷的缺陷的形式从浅沟槽隔离区释放砷，其又可以沉积在源极/漏极区的表面上。因此，本发明中描述的预硅化制备处理在金属硅化物形成之前特征是从导电表面除去天然氧化物和砷的缺陷。方法包括以氢氟酸和过氧化氢为特征的湿法蚀刻程序，以及在氢氟酸处理之后采用的旋转干燥和干蚀刻方法，以去除重新沉积的基于砷的缺陷。

2. 发明授权

US07268048B2 Methods for elimination of arsenic based defects in semiconductor devices with isolation regions 有权
标题翻译：在具有隔离区域的半导体器件中消除基于砷的缺陷的方法
公开(公告)号：US07268048B2
公开(公告)日：2007-09-11
申请号：US10913214
申请日：2004-08-06
申请人： Yin-Min Felicia Goh , Simon Chooi , Teck Wee Lim , Vincent Sih , Chian Yuh Sin , Ping Yu Ee , Zainab Ismail , Cher Sian Chua
发明人： Yin-Min Felicia Goh , Simon Chooi , Teck Wee Lim , Vincent Sih , Chian Yuh Sin , Ping Yu Ee , Zainab Ismail , Cher Sian Chua
IPC分类号： H01L21/4763 , H01L21/44 , H01L21/302
CPC分类号： H01L21/02057 , H01L21/02068 , H01L21/28518 , H01L21/76237 , H01L21/823814 , H01L21/823878 , H01L29/665 , H01L29/7833
摘要： Methods of preparing conductive regions such as source/drain regions for silicidation procedures, has been developed. The methods feature removal of native oxide as well as removal of deposited arsenic based defects from conductive surfaces prior to deposition of a metal component of subsequently formed metal silicide regions. Arsenic ions implanted for N type source/drain regions are also implanted into insulator regions such as insulator filled shallow trench isolation regions. A hydrofluoric acid cycle used as a component of the pre-silicidation preparation procedure can release arsenic from the shallow trench isolation regions in the form of arsenic based defects, which in turn can re-deposit on the surface of source/drain region. Therefore pre-silicidation preparation treatments described in this invention feature removal of both native oxide and arsenic based defects from conductive surfaces prior to metal silicide formation. Methods include wet etch procedures featuring hydrofluoric acid and hydrogen peroxide, as well as spin dry and dry etch procedures both employed post hydrofluoric acid treatment to remove re-deposited arsenic based defects.
摘要翻译：已经开发了制备用于硅化程序的源极/漏极区域的导电区域的方法。该方法在沉积随后形成的金属硅化物区域的金属组分之前，特征在于去除自然氧化物以及从导电表面去除沉积的基于砷的缺陷。注入用于N型源极/漏极区域的砷离子也被注入绝缘体区域，例如绝缘体填充的浅沟槽隔离区域。用作预硅化物制备方法的组分的氢氟酸循环可以以基于砷的缺陷的形式从浅沟槽隔离区释放砷，其又可以沉积在源极/漏极区的表面上。因此，本发明中描述的预硅化制备处理在金属硅化物形成之前特征是从导电表面除去天然氧化物和砷的缺陷。方法包括以氢氟酸和过氧化氢为特征的湿法蚀刻程序，以及在氢氟酸处理之后采用的旋转干燥和干蚀刻方法，以去除重新沉积的基于砷的缺陷。

3. 发明申请

US20080069958A1 INTEGRATED CIRCUIT SYSTEM WITH CLEAN SURFACES 有权
标题翻译：具有清洁表面的集成电路系统
公开(公告)号：US20080069958A1
公开(公告)日：2008-03-20
申请号：US11854972
申请日：2007-09-13
申请人： Yin-Min Felicia Goh , Zainab Ismail , Yong Siang Tan , Ling Zhi Tan , Sin Ping Chiew
发明人： Yin-Min Felicia Goh , Zainab Ismail , Yong Siang Tan , Ling Zhi Tan , Sin Ping Chiew
IPC分类号： B05D3/10 , B08B3/08
CPC分类号： C11D11/0047 , C11D7/04 , C11D7/06 , C11D7/08 , H01L21/02057 , H01L21/6704 , H01L21/67075
摘要： An integrated circuit system includes providing an integrated circuit wafer; applying a first cleaning solution over the integrated circuit wafer; and applying a second cleaning solution over the integrated circuit wafer to prevent or remove a defect resulting from the first cleaning process.
摘要翻译：集成电路系统包括提供集成电路晶片; 在集成电路晶片上施加第一清洁溶液; 以及在所述集成电路晶片上施加第二清洁溶液以防止或去除由所述第一清洁处理引起的缺陷。

4. 发明授权

US07968148B2 Integrated circuit system with clean surfaces 有权
标题翻译：集成电路系统，表面清洁
公开(公告)号：US07968148B2
公开(公告)日：2011-06-28
申请号：US11854972
申请日：2007-09-13
申请人： Yin-Min Felicia Goh , Zainab Ismail , Yong Siang Tan , Ling Zhi Tan , Sin Ping Chiew
发明人： Yin-Min Felicia Goh , Zainab Ismail , Yong Siang Tan , Ling Zhi Tan , Sin Ping Chiew
IPC分类号： B05D3/10 , B08B3/08
CPC分类号： C11D11/0047 , C11D7/04 , C11D7/06 , C11D7/08 , H01L21/02057 , H01L21/6704 , H01L21/67075
摘要： An integrated circuit system includes providing an integrated circuit wafer; applying a first cleaning solution over the integrated circuit wafer; and applying a second cleaning solution over the integrated circuit wafer to prevent or remove a defect resulting from the first cleaning process.
摘要翻译：集成电路系统包括提供集成电路晶片; 在集成电路晶片上施加第一清洁溶液; 以及在所述集成电路晶片上施加第二清洁溶液以防止或去除由所述第一清洁处理引起的缺陷。

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