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1. 发明申请

US20070085068A1 Spin transfer based magnetic storage cells utilizing granular free layers and magnetic memories using such cells 审中-公开
标题翻译：使用这种细胞的利用粒状自由层和磁存储器的基于旋转转移的磁存储单元
公开(公告)号：US20070085068A1
公开(公告)日：2007-04-19
申请号：US11251428
申请日：2005-10-14
申请人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
发明人： Dmytro Apalkov , Zhitao Diao , Yunfei Ding , Yiming Huai
IPC分类号： H01L47/00 , H01L29/00
CPC分类号： H01L43/08 , B82Y25/00 , G11C11/16 , H01F10/3227 , H01F10/3254 , H01F10/3259 , H01F10/3263 , H01F10/3272 , H01F10/3286 , H01L43/10
摘要： A method and system for providing a magnetic element and a memory incorporating the magnetic element is described. The method and system for providing the magnetic element include providing a pinned layer, a spacer layer, and a free layer. The free layer includes granular free layer having a plurality of grains in a matrix, the spacer layer residing between the pinned layer and the free layer. The magnetic element is configured to allow the granular free layer to be switched due to spin-transfer when a write current is passed through the magnetic element.
摘要翻译：描述了一种用于提供磁性元件的方法和系统以及结合有磁性元件的存储器。用于提供磁性元件的方法和系统包括提供钉扎层，间隔层和自由层。自由层包括在矩阵中具有多个晶粒的颗粒状自由层，间隔层位于被钉扎层和自由层之间。磁性元件配置成当写入电流通过磁性元件时由于自旋转移而允许粒状自由层被切换。

2. 发明申请

US20070019337A1 Magnetic elements having improved switching characteristics and magnetic memory devices using the magnetic elements 审中-公开
标题翻译：具有改进的开关特性的磁性元件和使用这些磁性元件的磁性存储器件
公开(公告)号：US20070019337A1
公开(公告)日：2007-01-25
申请号：US11185507
申请日：2005-07-19
申请人： Dmytro Apalkov , Yiming Huai
发明人： Dmytro Apalkov , Yiming Huai
IPC分类号： G11B5/127 , H01L21/00 , G11B5/33 , G11C11/15 , G11C11/00
CPC分类号： G01R33/093 , G11C11/16
摘要： A method and system for providing a magnetic element and a memory using the magnetic element are described. The method and system include providing a pinned layer, providing a spacer layer, and providing a free layer. The spacer layer is nonferromagnetic and resides between the pinned layer and the free layer. At least the free layer has a first end portion, a second end portion and a central portion between the first end portion and the second end portion. The first end portion, the second end portion and the central portion form an S-shape. At least one of the first end portion and the second end portion includes a curve. The magnetic element is also configured to allow the free layer to be switched at least in part due to spin transfer when a write current is passed through the magnetic element.
摘要翻译：描述了使用磁性元件提供磁性元件和存储器的方法和系统。该方法和系统包括提供钉扎层，提供间隔层，并提供自由层。间隔层是非铁磁性的并且位于被钉扎层和自由层之间。至少自由层具有在第一端部和第二端部之间的第一端部，第二端部和中心部分。第一端部，第二端部和中央部形成S形。第一端部和第二端部中的至少一个包括曲线。磁性元件还被配置为允许自由层至少部分地由于当写入电流通过磁性元件时的自旋转移而被切换。

3. 发明授权

US07518835B2 Magnetic elements having a bias field and magnetic memory devices using the magnetic elements 有权
标题翻译：具有偏磁场的磁性元件和使用该磁性元件的磁性存储器件
公开(公告)号：US07518835B2
公开(公告)日：2009-04-14
申请号：US11173087
申请日：2005-07-01
申请人： Yiming Huai , Dmytro Apalkov
发明人： Yiming Huai , Dmytro Apalkov
IPC分类号： G11B5/39
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in the first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。第一被钉扎层具有沿第一方向固定的第一磁化。第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。自由层具有基本上在第二方向上的纵向方向的形状各向异性。磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

4. 发明申请

US20070002504A1 Magnetic elements having a bias field and magnetic memory devices using the magnetic elements 有权
标题翻译：具有偏磁场的磁性元件和使用该磁性元件的磁性存储器件
公开(公告)号：US20070002504A1
公开(公告)日：2007-01-04
申请号：US11173087
申请日：2005-07-01
申请人： Yiming Huai , Dmytro Apalkov
发明人： Yiming Huai , Dmytro Apalkov
IPC分类号： G11B5/33 , G11B5/127
CPC分类号： G11C11/16
摘要： A method and system for providing a magnetic element are disclosed. The method and system include providing a magnetic biasing structure having a first pinned layer, a second pinned layer, a spacer layer, and a free layer. The first pinned layer has a first magnetization pinned in a first direction. The second pinned layer has a second magnetization in a second direction that is substantially perpendicular or along the first direction. The spacer layer is nonferromagnetic, resides between the second pinned layer and the free layer, and is configured such that the free layer is substantially free of exchange coupling with the second pinned layer. The free layer has a shape anisotropy with a longitudinal direction substantially in the second direction. The magnetic biasing structure provides a bias field for the free layer along the hard or easy axis. In one aspect, the second pinned layer resides between the first pinned layer and the free layer.
摘要翻译：公开了一种用于提供磁性元件的方法和系统。该方法和系统包括提供具有第一被钉扎层，第二钉扎层，间隔层和自由层的磁偏置结构。第一固定层具有沿第一方向固定的第一磁化。第二被钉扎层在基本垂直或沿第一方向的第二方向上具有第二磁化强度。间隔层是非铁磁性的，位于第二被钉扎层和自由层之间，并且被配置为使得自由层基本上不与第二被钉扎层的交换耦合。自由层具有基本上在第二方向上的纵向方向的形状各向异性。磁偏置结构为沿着硬轴或易轴提供自由层的偏置场。在一个方面，第二被钉扎层位于第一被钉扎层和自由层之间。

5. 发明授权

US09142758B2 Method and system for providing a magnetic junction configured for precessional switching using a bias structure 有权
标题翻译：用于提供使用偏置结构配置为进动切换的磁结的方法和系统
公开(公告)号：US09142758B2
公开(公告)日：2015-09-22
申请号：US13495830
申请日：2012-06-13
申请人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
发明人： Dmytro Apalkov , Xueti Tang , Mohamad Towfik Krounbi , Vladimir Nikitin
IPC分类号： G11C11/16 , H01L43/08 , H01L27/22
CPC分类号： H01L43/08 , G11C11/161 , H01L27/228
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a first pinned layer having a first pinned layer magnetization, a first nonmagnetic spacer layer, and a free layer having an easy axis. The first nonmagnetic spacer layer is between the first pinned layer and the free layer. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction and such that the free layer employs precessional switching.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括具有第一固定层磁化的第一被钉扎层，第一非磁性间隔层和具有易轴的自由层。第一非磁性间隔层位于第一被钉扎层和自由层之间。磁结被配置为使得当写入电流通过磁结并且使得自由层采用进动切换时，自由层可在多个稳定磁状态之间切换。

6. 发明授权

US09087633B2 Magnetic device having a magnetic material in a contact structure coupled to a magnetic element and method of manufacture thereof 有权
标题翻译：具有耦合到磁性元件的接触结构中的磁性材料的磁性器件及其制造方法
公开(公告)号：US09087633B2
公开(公告)日：2015-07-21
申请号：US13334045
申请日：2011-12-21
申请人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
发明人： Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Dmytro Apalkov , Mohamad Towfik Krounbi
IPC分类号： H01F10/32 , H01L43/10 , H01L43/08 , G11C11/16
CPC分类号： H01F10/3263 , G11C11/161 , H01F10/3236 , H01F10/3272 , H01F10/3286 , H01L43/08 , H01L43/10
摘要： A magnetic device has a contact structure including a magnetic material therein. The contact structure is magnetostatically and/or electrically coupled to a magnetic element such as one having a magnetic tunneling junction (MTJ) multilayer structure. The magnetic material included in the contact structure is configured to compensate for an offset field acting on the free layer of the magnetic element by reference layers of the magnetic element.
摘要翻译：磁性装置具有包括磁性材料的接触结构。接触结构是磁性地和/或电耦合到诸如具有磁性隧道结（MTJ）多层结构的磁性元件的磁性元件。包括在接触结构中的磁性材料被配置为通过磁性元件的参考层补偿作用在磁性元件的自由层上的偏移场。

7. 发明申请

US20150200357A1 METHOD AND SYSTEM FOR PROVIDING MULTIPLE SELF-ALIGNED LOGIC CELLS IN A SINGLE STACK 有权
标题翻译：在单堆栈中提供多个自对准逻辑单元的方法和系统
公开(公告)号：US20150200357A1
公开(公告)日：2015-07-16
申请号：US13604182
申请日：2012-09-05
申请人： Mohamad Towfik Krounbi , Dmytro Apalkov , Vladimir Nikitin , Alexander A.G. Driskill-Smith
发明人： Mohamad Towfik Krounbi , Dmytro Apalkov , Vladimir Nikitin , Alexander A.G. Driskill-Smith
IPC分类号： H01L43/12 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , G11C11/161 , G11C11/5607 , H01L27/228 , H01L43/02 , H01L43/08
摘要： A magnetic device including memory cells is provided. Each memory cell can store multiple bits corresponding to multiple data storage layers. Desired spacing(s) and desired junction angle(s) for the data storage layers are determined in each memory cell. The desired junction angle(s) and the desired spacing(s) correspond to spin transfer switching currents for the data storage layers having. A magnetoresistive stack including plurality of layers for each of the memory cells is deposited. The memory cells include the data storage layers. A data storage layer layers is spaced apart from nearest data storage layer(s) by a distance corresponding to the desired spacing(s). A mask corresponding to the memory cells is provided on the layers. The memory cells are defined such that each memory cell has the desired junction angle(s) and the desired spacing(s) and such that the data storage layers for each of the memory cells is self-aligned.
摘要翻译：提供包括存储单元的磁性装置。每个存储器单元可以存储对应于多个数据存储层的多个位。在每个存储单元中确定数据存储层的期望间隔和所需的结合角度。期望的结角和期望的间隔对应于具有数据存储层的自旋转移开关电流。存储包括用于每个存储器单元的多个层的磁阻堆叠。存储单元包括数据存储层。数据存储层层与最近的数据存储层间隔一段与期望间隔相对应的距离。在层上提供对应于存储单元的掩模。存储器单元被定义为使得每个存储器单元具有期望的结合角和期望的间隔，并且使得每个存储器单元的数据存储层是自对准的。

8. 发明授权

US08890267B2 Method and system for providing magnetic junctions having a graded magnetic free layer 有权
标题翻译：用于提供具有渐变磁性层的磁结的方法和系统
公开(公告)号：US08890267B2
公开(公告)日：2014-11-18
申请号：US13691873
申请日：2012-12-03
申请人： Dmytro Apalkov , Vladimir Nikitin , Mohamad Towfik Krounbi
发明人： Dmytro Apalkov , Vladimir Nikitin , Mohamad Towfik Krounbi
IPC分类号： H01L27/22 , H01L43/08 , G11C11/16
CPC分类号： H01L27/222 , G11C11/161 , G11C11/1675 , G11C11/5607 , H01L43/08 , H01L43/12
摘要： A method and system provide a magnetic junction usable in a magnetic device. The magnetic junction includes a pinned layer, a nonmagnetic spacer layer, and a free layer. The nonmagnetic spacer layer is between the pinned layer and the free layer. The free layer has a gradient in a critical switching current density (Jc0) such that a first Jc0 of a first portion of the free layer is lower than a second Jc0 of a second portion of the free layer. The second portion of the free layer is further from the nonmagnetic spacer layer than the first portion is. The magnetic junction is configured such that the free layer is switchable between a plurality of stable magnetic states when a write current is passed through the magnetic junction.
摘要翻译：一种方法和系统提供可用于磁性装置的磁结。磁结包括钉扎层，非磁性间隔层和自由层。非磁性间隔层位于被钉扎层和自由层之间。自由层具有临界开关电流密度（Jc0）的梯度，使得自由层的第一部分的第一Jc0低于自由层的第二部分的第二部分Jc0。自由层的第二部分比第一部分更远离非磁性间隔层。磁结被配置为使得当写入电流通过磁结时，自由层可在多个稳定磁状态之间切换。

9. 发明授权

US08697484B2 Method and system for setting a pinned layer in a magnetic tunneling junction 有权
标题翻译：用于设置磁隧道结中钉扎层的方法和系统
公开(公告)号：US08697484B2
公开(公告)日：2014-04-15
申请号：US13332093
申请日：2011-12-20
申请人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
发明人： Dmytro Apalkov , Alexey Vasilyevitch Khvalkovskiy , Vladimir Nikitin , Mohamad Towfik Krounbi , Xueti Tang , Se Chung Oh , Woo Chang Lim , Jang Eun Lee , Ki Woong Kim , Kyoung Sun Kim
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , G11C11/161 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/10 , H01L43/12
摘要： A method and system for setting the direction of pinned layers in a magnetic junction are described. In one aspect, a magnetic field greater than the coercivity of the layers in a pinned layer but less than the coupling field between the layers is applied. In another aspect the pinned layers are switched from an anti-dual state to a dual state using a spin transfer torque current. In another aspect, a magnetic junction having a partial perpendicular anisotropy (PPMA) layer in the pinned layer is provided. In some aspects, the PPMA layer is part of a synthetic antiferromagnetic structure. In some embodiments, a decoupling layer is provided between the PPMA layer and another ferromagnetic layer in the pinned layer.
摘要翻译：描述了用于设置磁结中的钉扎层的方向的方法和系统。一方面，施加大于被钉扎层中的层的矫顽力但小于层之间的耦合场的磁场。在另一方面，使用自旋转移转矩电流将钉扎层从反双重状态切换到双重状态。在另一方面，提供了在钉扎层中具有部分垂直各向异性（PPMA）层的磁性结。在一些方面，PPMA层是合成反铁磁结构的一部分。在一些实施方案中，在固着层中的PPMA层和另一铁磁层之间提供去耦层。

10. 发明授权

US08649214B2 Magnetic memory including magnetic memory cells integrated with a magnetic shift register and methods thereof 有权
标题翻译：磁存储器包括与磁移位寄存器集成的磁存储单元及其方法
公开(公告)号：US08649214B2
公开(公告)日：2014-02-11
申请号：US13332230
申请日：2011-12-20
申请人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
发明人： Dmytro Apalkov , Vladimir Nikitin , Alexey Vasilyevitch Khvalkovskiy
IPC分类号： G11C11/15
CPC分类号： G11C19/0841 , G11C11/161 , G11C11/1675
摘要： A magnetic memory includes magnetic memory elements corresponding to magnetic memory cells and at least one shift register. Each magnetic memory element includes a pinned layer, a free layer, and a nonmagnetic spacer layer between the pinned and free layers. The free layer is switchable between stable magnetic states when a write current is passed through the magnetic memory element. The shift register(s) correspond to the magnetic memory elements. Each shift register includes domains separated by domain walls. A domain is antiparallel to an adjoining domain. The shift register(s) are configured such that an equilibrium state aligns a portion of the domains with the magnetic memory elements. The shift register(s) are also configured such that each domain wall shifts to a location of an adjoining domain wall when a shift current is passed through the shift register(s) in a direction along adjoining domains.
摘要翻译：磁存储器包括对应于磁存储器单元和至少一个移位寄存器的磁存储元件。每个磁存储元件包括被钉扎层，自由层和在钉扎层和自由层之间的非磁性间隔层。当写入电流通过磁存储元件时，自由层可在稳定磁状态之间切换。移位寄存器对应于磁存储元件。每个移位寄存器包括由畴壁分隔的域。一个域与相邻域反向并行。移位寄存器被配置为使得平衡状态将磁畴的一部分与磁存储元件对准。移位寄存器还被配置为使得当移位电流沿着相邻域的方向通过移位寄存器时，每个域壁移动到相邻畴壁的位置。

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