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1. 发明申请

US20060226412A1 Thick semi-insulating or insulating epitaxial gallium nitride layers and devices incorporating same 有权
标题翻译：厚半绝缘或绝缘外延氮化镓层和结合其的器件
公开(公告)号：US20060226412A1
公开(公告)日：2006-10-12
申请号：US11103117
申请日：2005-04-11
申请人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
发明人： Adam Saxler , Yifeng Wu , Primit Parikh , Umesh Mishra , Richard Smith , Scott Sheppard
IPC分类号： H01L29/06
CPC分类号： H01L21/0254 , H01L21/0237 , H01L21/02425 , H01L21/02439 , H01L21/02491 , H01L21/02581 , H01L21/0262 , H01L29/1608 , H01L29/2003 , H01L29/4175 , H01L29/41766 , H01L29/66462 , H01L29/7787
摘要： Semiconductor device structures and methods of fabricating semiconductor devices structures are provided that include a semi-insulating or insulating GaN epitaxial layer on a conductive semiconductor substrate and/or a conductive layer. The semi-insulating or insulating GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive SiC substrate and an insulating or semi-insulating GaN epitaxial layer on the conductive SiC substrate. The GaN epitaxial layer has a thickness of at least about 4 μm. GaN semiconductor device structures and methods of fabricating GaN semiconductor device structures are also provided that include an electrically conductive GaN substrate, an insulating or semi-insulating GaN epitaxial layer on the conductive GaN substrate, a GaN based semiconductor device on the GaN epitaxial layer and a via hole and corresponding via metal in the via hole that extends through layers of the GaN based semiconductor device and the GaN epitaxial layer.
摘要翻译：提供半导体器件结构和制造半导体器件结构的方法，其包括在导电半导体衬底和/或导电层上的半绝缘或绝缘GaN外延层。半绝缘或绝缘GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括在导电SiC衬底上的导电SiC衬底和绝缘或半绝缘GaN外延层。 GaN外延层具有至少约4μm的厚度。还提供GaN半导体器件结构和制造GaN半导体器件结构的方法，其包括导电GaN衬底，导电GaN衬底上的绝缘或半绝缘GaN外延层，GaN外延层上的GaN基半导体器件和通孔和通孔中相应的通孔金属延伸穿过GaN基半导体器件和GaN外延层的层。

2. 发明授权

US11791385B2 Wide bandgap transistors with gate-source field plates 有权
公开(公告)号：US11791385B2
公开(公告)日：2023-10-17
申请号：US11078265
申请日：2005-03-11
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
IPC分类号： H01L29/40 , H01L29/778 , H01L29/20
CPC分类号： H01L29/402 , H01L29/404 , H01L29/7787 , H01L29/2003
摘要： A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A spacer layer is on at least part of the surface of the plurality of active region between the gate and the drain electrode and between the gate and the source electrode. A field plate is on the spacer layer and extends on the spacer and over the active region toward the drain electrode. The field plate also extends on the spacer layer over the active region and toward the source electrode. At least one conductive path electrically connects the field plate to the source electrode or the gate.

3. 发明申请

US20060202272A1 Wide bandgap transistors with gate-source field plates 审中-公开
标题翻译：具有栅源场的宽带隙晶体管
公开(公告)号：US20060202272A1
公开(公告)日：2006-09-14
申请号：US11078265
申请日：2005-03-11
申请人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
发明人： Yifeng Wu , Primit Parikh , Umesh Mishra , Scott Sheppard
IPC分类号： H01L29/739
CPC分类号： H01L29/402 , H01L29/2003 , H01L29/404 , H01L29/7787
摘要： A transistor comprising an active region having a channel layer, with source and drain electrodes formed in contact with the active region and a gate formed between the source and drain electrodes and in contact with the active region. A spacer layer is on at least part of the surface of the plurality of active region between the gate and the drain electrode and between the gate and the source electrode. A field plate is on the spacer layer and extends on the spacer and over the active region toward the drain electrode. The field plate also extends on the spacer layer over the active region and toward the source electrode. At least one conductive path electrically connects the field plate to the source electrode or the gate.
摘要翻译：一种晶体管，包括具有沟道层的有源区，源极和漏极形成为与有源区接触，栅极形成在源极和漏极之间并与有源区接触。间隔层位于栅极和漏电极之间以及栅极和源极之间的多个有源区的表面的至少一部分上。场板位于间隔层上并且在间隔物上延伸并且在有源区上方朝向漏电极延伸。场板还在有源区上的间隔层上延伸并且朝向源电极延伸。至少一个导电路径将场板电连接到源电极或栅极。

4. 发明申请

US20060208280A1 Group III nitride field effect transistors (FETS) capable of withstanding high temperature reverse bias test conditions 有权
标题翻译：能耐受高温反向偏压测试条件的III类氮化物场效应晶体管（FETS）
公开(公告)号：US20060208280A1
公开(公告)日：2006-09-21
申请号：US11080905
申请日：2005-03-15
申请人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
发明人： Richard Smith , Scott Sheppard , Adam Saxler , Yifeng Wu
IPC分类号： H01L29/739
CPC分类号： H01L27/0605 , H01L29/2003 , H01L29/207 , H01L29/42316 , H01L29/7787
摘要： Group III Nitride based field effect transistor (FETS) are provided having a power degradation of less than about 3.0 dB when operated at a drain-to-source voltage (VDS) of about 56 volts, a gate to source voltage (Vgs) of from about −8 to about −14 volts and a temperature of about 140 ° C. for at least about 10 hours.
摘要翻译：提供基于III族氮化物的场效应晶体管（FETS），其在约56伏的漏极 - 源极电压（V SUB DS）下操作时具有小于约3.0dB的功率劣化，栅极至约-14伏特的电源电压（V S）和约140℃的温度至少约10小时。

5. 发明授权

US08812347B2 Aggregating and capturing subscriber traffic 有权
标题翻译：聚合和捕获用户流量
公开(公告)号：US08812347B2
公开(公告)日：2014-08-19
申请号：US12469909
申请日：2009-05-21
申请人： Geoffrey Richard Zampiello , Scott Sheppard
发明人： Geoffrey Richard Zampiello , Scott Sheppard
IPC分类号： G06Q30/02 , H04L29/08 , H04W28/06 , H04W8/26
CPC分类号： H04L43/04 , G06Q30/0246 , H04L43/022 , H04L43/12 , H04L67/22 , H04W8/26 , H04W24/08 , H04W28/06
摘要： System(s), method(s), and device(s) that can aggregate all or substantially all data traffic, such as wireless data traffic egressing to the Internet, at one or more regional aggregation hubs and capture a portion(s) of data traffic associated with a subscriber(s) of interest at the regional hub(s) are presented. Data traffic associated with subscribers can be aggregated at an access concentrator(s) and respective public Internet Protocol (IP) addresses can be given to respective subscribers. The data traffic can be aggregated at the regional hub(s) and data traffic associated with a subscriber(s) of interest can be identified based at least in part on the public IP address(es) of the respective subscriber(s) of interest. The data traffic associated with a subscriber(s) of interest can be captured and provided to a consumer (e.g., law enforcement, service provider) who desires such data.
摘要翻译：可以将所有或基本上所有数据流量（诸如出口到因特网的无线数据流量）聚集在一个或多个区域聚合集线器上的系统，方法和设备，并捕获一部分或多个呈现与区域中心的一个或多个用户有关的数据业务。与订户相关联的数据业务可以在接入集中器处聚合，并且可以向相应的订户分配相应的公共因特网协议（IP）地址。可以在区域集线器处聚合数据业务，并且可以至少部分地基于相关用户的公共IP地址来识别与感兴趣的用户相关联的数据业务。可以捕获与感兴趣的用户相关联的数据流量并将其提供给希望这样的数据的消费者（例如，执法部门，服务提供商）。

6. 发明申请

US20110193135A1 Methods of Forming Contact Structures Including Alternating Metal and Silicon Layers and Related Devices 有权
标题翻译：形成包括交替金属和硅层及相关器件的接触结构的方法
公开(公告)号：US20110193135A1
公开(公告)日：2011-08-11
申请号：US12704013
申请日：2010-02-11
申请人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
发明人： Helmut Hagleitner , Zoltan Ring , Scott Sheppard , Jason Henning , Jason Gurganus , Dan Namishia
IPC分类号： H01L29/205 , H01L21/285
CPC分类号： H01L29/452 , H01L21/28575 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L2924/0002 , H01L2924/00
摘要： A method of forming a semiconductor device, the method comprising providing a semiconductor layer, and providing a first layer of a first metal on the semiconductor layer. A second layer may be provided on the first layer of the first metal. The second layer may include a layer of silicon and a layer of a second metal, and the first and second metals may be different. The first metal may be titanium and the second metal may be nickel. Related devices, structures, and other methods are also discussed.
摘要翻译：一种形成半导体器件的方法，所述方法包括提供半导体层，以及在所述半导体层上提供第一金属的第一层。可以在第一金属的第一层上提供第二层。第二层可以包括硅层和第二金属层，第一和第二金属可以不同。第一金属可以是钛，第二金属可以是镍。还讨论了相关设备，结构和其他方法。

7. 发明授权

US07975046B2 Verifying a lawful interception system 有权
标题翻译：验证合法的截取系统
公开(公告)号：US07975046B2
公开(公告)日：2011-07-05
申请号：US12062206
申请日：2008-04-03
申请人： Scott Sheppard
发明人： Scott Sheppard
IPC分类号： G06F15/173 , G06F17/00 , H04L29/06
CPC分类号： H04L63/30
摘要： Methods, systems, and computer-readable media provide for verifying a lawful interception system. A first file and a second file are received. The first file is formed by recording data traffic at a computer as the data traffic generated at the computer is transmitted from the computer to a remote network via a broadband remote access server (BRAS), saving the recorded data traffic as a first packet capture and flat file export (PCAP) file, and exporting packet summary lines from the first PCAP file. The second file is formed by intercepting the data traffic as the data traffic egresses from a mediation system to a law enforcement agency (LEA) system, saving the intercepted data traffic as a second PCAP file, and exporting packet summary lines from the second PCAP file. The first file is compared with the second file to verify an accuracy of the mediation system.
摘要翻译：方法，系统和计算机可读介质提供了验证合法拦截系统。接收第一个文件和第二个文件。当计算机产生的数据业务经由宽带远程接入服务器（BRAS）从计算机发送到远程网络时，通过在计算机上记录数据流量来形成第一个文件，将记录的数据流量保存为第一分组捕获，平面文件导出（PCAP）文件，并从第一个PCAP文件导出数据包摘要行。第二个文件是通过在数据流量从中介系统向执法机构（LEA）系统出口时拦截数据流量形成的，将拦截的数据流量保存为第二个PCAP文件，并从第二个PCAP文件导出数据包摘要行。将第一个文件与第二个文件进行比较，以验证中介系统的准确性。

8. 发明申请

US20080181217A1 Methods, systems and computer program products for integrating network traffic 失效
标题翻译：用于整合网络流量的方法，系统和计算机程序产品
公开(公告)号：US20080181217A1
公开(公告)日：2008-07-31
申请号：US11700311
申请日：2007-01-31
申请人： Scott Sheppard , Roy Mongiovi
发明人： Scott Sheppard , Roy Mongiovi
IPC分类号： H04L12/56
CPC分类号： H04L45/50 , H04L45/02 , H04L45/04 , H04L45/54
摘要： Methods, systems and computer program products for integrating data in a communications network received at provider (P) routers from provider edge (PE) routers having a plurality of different configurations are provided. Global collection and export parameters for the P routers are configured. A collector associated with the P routers is configured to maintain a netflow exported data table for the P routers based on the global collection and export parameters received from the P routers. P router text files are configured. The P router text files identify all P routers associated with the collector using Internet protocol (IP) addresses associated with each of the P routers. A destination PE router is located for a selected P router based on IP addresses in the P router text file associated with the selected P router such that the interface IP address of the selected P router is matched with the open shortest path first (OSPF) router identification of the destination PE router.
摘要翻译：提供了用于将数据集成在从具有多个不同配置的提供商边缘（PE）路由器的提供商（P）路由器处接收的通信网络中的方法，系统和计算机程序产品。配置P路由器的全局收集和导出参数。与P路由器相关联的收集器被配置为基于从P路由器接收的全局收集和导出参数来维护P路由器的净流输出数据表。配置P路由器文本文件。 P路由器文本文件使用与每个P路由器相关联的因特网协议（IP）地址来标识与收集器相关联的所有P路由器。基于与所选P路由器相关联的P路由器文本文件中的IP地址，为所选择的P路由器定位目的地PE路由器，使得所选择的P路由器的接口IP地址与开放最短路径优先（OSPF）路由器匹配目的PE路由器的标识。

9. 发明申请

US20070269968A1 Semiconductor devices including self aligned refractory contacts and methods of fabricating the same 有权
$Semiconductor devices including self aligned refractory contacts and methods of fabricating the same$
标题翻译：包括自对准耐火触点的半导体器件及其制造方法
公开(公告)号：US20070269968A1
公开(公告)日：2007-11-22
申请号：US11434853
申请日：2006-05-16
申请人： Adam William Saxler , Scott Sheppard
发明人： Adam William Saxler , Scott Sheppard
IPC分类号： H01L21/265
CPC分类号： H01L29/7787 , H01L21/3245 , H01L29/2003 , H01L29/66462
摘要： Methods of forming semiconductor devices are provided by forming a semiconductor layer on a semiconductor substrate. A mask is formed on the semiconductor layer. Ions having a first conductivity type are implanted into the semiconductor layer according to the mask to form implanted regions on the semiconductor layer. Metal layers are formed on the implanted regions according to the mask. The implanted regions and the metal layers are annealed in a single step to respectively activate the implanted ions in the implanted regions and provide ohmic contacts on the implanted regions. Related devices are also provided.
摘要翻译：通过在半导体衬底上形成半导体层来提供形成半导体器件的方法。在半导体层上形成掩模。具有第一导电类型的离子根据掩模注入到半导体层中，以在半导体层上形成注入区域。根据掩模在注入区域上形成金属层。注入区域和金属层在单个步骤中退火以分别激活注入区域中的注入离子并在注入区域上提供欧姆接触。还提供了相关设备。

10. 发明授权

US07238560B2 Methods of fabricating nitride-based transistors with a cap layer and a recessed gate 有权
标题翻译：制造具有盖层和凹入栅极的基于氮化物的晶体管的方法
公开(公告)号：US07238560B2
公开(公告)日：2007-07-03
申请号：US10897726
申请日：2004-07-23
申请人： Scott Sheppard , Richard Peter Smith
发明人： Scott Sheppard , Richard Peter Smith
IPC分类号： H01L21/338
CPC分类号： H01L29/7787 , H01L29/2003 , H01L29/41766 , H01L29/42316 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/778 , H01L29/7786 , H01L2924/13064
摘要： An anneal of a gate recess prior to formation of a gate contact, such as a Schottky contact, may reduce gate leakage and/or provide a high quality gate contact in a semiconductor device, such as a transistor. The use of an encapsulation layer during the anneal may further reduce damage to the semiconductor in the gate recess of the transistor. The anneal may be provided, for example, by an anneal of ohmic contacts of the device. Thus, high quality gate and ohmic contacts may be provided with reduced degradation of the gate region that may result from providing a recessed gate structure as a result of etch damage in forming the recess.
摘要翻译：在形成诸如肖特基接触之类的栅极接触之前的栅极凹槽的退火可以减少栅极泄漏和/或在诸如晶体管的半导体器件中提供高质量的栅极接触。在退火期间使用封装层可以进一步降低对晶体管的栅极凹槽中的半导体的损坏。退火可以例如通过器件的欧姆接触的退火来提供。因此，可以提供高质量的栅极和欧姆接触，由于在形成凹槽时由于蚀刻损伤而提供凹陷的栅极结构可能导致栅极区域的降低。

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