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1. 发明申请

US20080017859A1 SYSTEM FOR DISPLAYING IMAGES INCLUDING THIN FILM TRANSISTOR DEVICE AND METHOD FOR FABRICATING THE SAME 审中-公开
标题翻译：用于显示包括薄膜晶体管器件的图像的系统及其制造方法
公开(公告)号：US20080017859A1
公开(公告)日：2008-01-24
申请号：US11458118
申请日：2006-07-18
申请人： Yi-Wen Tai , Cheng-Hsin Chen , Jr-Hong Chen
发明人： Yi-Wen Tai , Cheng-Hsin Chen , Jr-Hong Chen
IPC分类号： H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L27/12 , H01L27/124 , H01L27/1248 , H01L27/3244 , H01L51/56
摘要： A system for displaying images comprises a thin film transistor (TFT) device comprising a substrate having a pixel region and a terminal region. A first conductive layer is disposed on the substrate, comprising a gate electrode for a thin film transistor in the pixel region and at least one track in the terminal region. An interlayer dielectric layer is disposed on the substrate, covering the thin film transistor and the track. A second conductive layer is disposed on the interlayer dielectric layer in the pixel region, electrically connected to the thin film transistor to serve as a source/drain electrode thereof and electrically connected to the track in the terminal region. A planarization layer is disposed on the interlayer dielectric layer in the pixel region.
摘要翻译：用于显示图像的系统包括薄膜晶体管（TFT）器件，其包括具有像素区域和端子区域的衬底。第一导电层设置在衬底上，包括用于像素区域中的薄膜晶体管的栅极电极和端子区域中的至少一个轨道。层间介电层设置在基板上，覆盖薄膜晶体管和轨道。第二导电层设置在像素区域中的层间电介质层上，电连接到薄膜晶体管以用作其源极/漏极，并电连接到端子区域中的轨道。平面化层设置在像素区域中的层间电介质层上。

2. 发明申请

US20080186454A1 SYSTEMS FOR DISPLAYING IMAGES AND METHODS FOR FABRICATING THE SAME 有权
标题翻译：用于显示图像的系统及其制造方法
公开(公告)号：US20080186454A1
公开(公告)日：2008-08-07
申请号：US11670549
申请日：2007-02-02
申请人： Yao-Pin Hsu , Chi-Wen Peng , Cheng-Hsin Chen , Jr-Hong Chen
发明人： Yao-Pin Hsu , Chi-Wen Peng , Cheng-Hsin Chen , Jr-Hong Chen
IPC分类号： G03F7/26 , G03B21/14
CPC分类号： G02F1/133516 , G02F2001/133388 , G02F2001/133519
摘要： Systems for displaying images and methods for fabricating the same. A representative system includes a substrate having a display region and a peripheral region, and a mosaic color filter pattern formed in the peripheral region. The mosaic color filter pattern includes a plurality of separated pillars and a plurality of channels adjacent to the pillars. Specifically the volume ratio between the pillars and the channel is 1:5 to 2:1, preferably 1:3 to 1:1.
摘要翻译：用于显示图像的系统及其制造方法。代表性系统包括具有显示区域和周边区域的基板和形成在周边区域中的马赛克滤色器图案。马赛克滤色器图案包括多个分离的柱和与柱相邻的多个通道。具体地说，柱和通道之间的体积比为1:5至2:1，优选1:3至1:1。

3. 发明授权

US07884899B2 System for displaying images and method with a peripheral region having a mosaic color filter pattern thereon that has pillars and channels and an opening along its boundary 有权
标题翻译：用于显示图像和方法的系统，具有其上具有柱和通道的马赛克滤色器图案的外围区域和沿其边界的开口
公开(公告)号：US07884899B2
公开(公告)日：2011-02-08
申请号：US11670549
申请日：2007-02-02
申请人： Yao-Pin Hsu , Chi-Wen Peng , Cheng-Hsin Chen , Jr-Hong Chen
发明人： Yao-Pin Hsu , Chi-Wen Peng , Cheng-Hsin Chen , Jr-Hong Chen
IPC分类号： G02F1/1335
CPC分类号： G02F1/133516 , G02F2001/133388 , G02F2001/133519
摘要： Systems for displaying images and methods for fabricating the same. A representative system includes a substrate having a display region and a peripheral region, and a mosaic color filter pattern formed in the peripheral region. The mosaic color filter pattern includes a plurality of separated pillars and a plurality of channels adjacent to the pillars. Specifically the volume ratio between the pillars and the channel is 1:5 to 2:1, preferably 1:3 to 1:1.
摘要翻译：用于显示图像的系统及其制造方法。代表性系统包括具有显示区域和周边区域的基板和形成在周边区域中的马赛克滤色器图案。马赛克滤色器图案包括多个分离的柱和与柱相邻的多个通道。具体地说，柱和通道之间的体积比为1:5至2:1，优选1:3至1:1。

4. 发明授权

US07505097B2 Manufacturing method of reflective layer of display device, reflective LCD device and transflective LCD device 有权
标题翻译：显示装置的反射层制造方法，反射型LCD装置和半透反射式液晶显示装置
公开(公告)号：US07505097B2
公开(公告)日：2009-03-17
申请号：US11104784
申请日：2005-04-12
申请人： Hung-Yi Luo , Min-Chin Su , Shih-Han Chen , Been-Chih Liou , Jr-Hong Chen
发明人： Hung-Yi Luo , Min-Chin Su , Shih-Han Chen , Been-Chih Liou , Jr-Hong Chen
IPC分类号： G02F1/1335
CPC分类号： G02F1/133555 , G02F2203/02
摘要： A reflective and a transflective liquid crystal display device and a manufacturing method thereof are provided. The manufacturing method includes the following steps. First, a substrate structure of a reflective or a transflective liquid crystal display device is provided. Next, a reflection layer is formed over the substrate structure, a protection layer is formed over the reflection layer, and a photoresist layer is formed over the protection layer. Then, the photoresist layer is patterned to form a patterned photoresist layer, the protection layer is patterned to form a patterned protection layer, and the reflection layer is patterned to form a patterned reflection layer. Thereafter, the patterned photoresist layer is removed.
摘要翻译：提供了一种反射和半透射型液晶显示装置及其制造方法。该制造方法包括以下步骤。首先，提供反射型或半透射型液晶显示装置的基板结构。接着，在基板结构上形成反射层，在反射层上形成保护层，在保护层上形成光致抗蚀剂层。然后，对光致抗蚀剂层进行图案化以形成图案化的光致抗蚀剂层，将保护层图案化以形成图案化的保护层，并且将反射层图案化以形成图案化的反射层。此后，去除图案化的光致抗蚀剂层。

5. 发明授权

US06479398B1 Method of manufacturing an amorphous-silicon thin film transistor 有权
标题翻译：制造非晶硅薄膜晶体管的方法
公开(公告)号：US06479398B1
公开(公告)日：2002-11-12
申请号：US09692247
申请日：2000-10-18
申请人： Jr-Hong Chen , Jeng-Hung Sun , Hsixg-Ju Sung , Pi-Fu Chen , Dou-I Chen
发明人： Jr-Hong Chen , Jeng-Hung Sun , Hsixg-Ju Sung , Pi-Fu Chen , Dou-I Chen
IPC分类号： H01L21302
CPC分类号： H01L29/66765 , H01L29/78669
摘要： A structure of an amorphous-silicon thin film transistor array comprises a substrate, a gate electrode, a gate insulating layer, an amorphous-silicon active layer, an n+ amorphous-silicon layer and a metal layer. The metal layer defines a source electrode and a drain electrode. The structure simplifies the photolithography process by using a less number of masks to manufacture thin film transistors. It also reduces the occurrence of open circuits in the first metal (MI) layer or short circuits between the MI layer and the second metal (MII) layer caused by the photoresist residue or particle contamination. The manufacturing method combines a conventional back-channel-etched (BCE) reduced mask process and a two-step exposure technology. The two-step exposure technology uses two photoresist pattern masks. One is a pattern mask for complete exposure with higher light intensity and the other is a pattern mask for incomplete exposure with lower light intensity. The photoresist pattern with incomplete exposure is then etched by an O2 plasma etching process. The amorphous-silicon layer and the metal layer has the characteristic of an island metal masking structure that protects the active layer from plasma damage in plasma etching process.
摘要翻译：非晶硅薄膜晶体管阵列的结构包括基板，栅电极，栅绝缘层，非晶硅有源层，n +非晶硅层和金属层。金属层限定了源电极和漏电极。该结构通过使用较少数量的掩模来制造薄膜晶体管来简化光刻工艺。它还减少了第一金属（MI）层中的开路的发生或由光致抗蚀剂残留物或颗粒污染引起的MI层和第二金属（MII）层之间的短路。该制造方法结合了常规的背沟道蚀刻（BCE）减少掩模工艺和两步曝光技术。两步曝光技术使用两个光刻胶图案掩模。一种是具有较高光强度的完全曝光的图案掩模，另一种是具有较低光强度的不完全曝光的图案掩模。然后通过O 2等离子体蚀刻工艺蚀刻具有不完全曝光的光致抗蚀剂图案。非晶硅层和金属层具有在等离子体蚀刻工艺中保护有源层免受等离子体损伤的岛金属掩蔽结构的特征。

6. 发明申请

US20050186715A1 Method of an array of structures sensitive to ESD and structure made therefrom 有权
标题翻译：对ESD敏感的结构阵列的方法和由其制成的结构
公开(公告)号：US20050186715A1
公开(公告)日：2005-08-25
申请号：US11040747
申请日：2005-01-24
申请人： Jr-Hong Chen , Gwo-Long Lin , Chih-Fang Chen
发明人： Jr-Hong Chen , Gwo-Long Lin , Chih-Fang Chen
IPC分类号： G02F1/1368 , G02F1/1362 , G09F9/30 , H01L21/00 , H01L21/28 , H01L21/3205 , H01L21/77 , H01L21/82 , H01L21/84 , H01L27/02 , H01L27/12 , H01L29/786
CPC分类号： H01L27/0248 , G02F1/136204 , H01L27/1214
摘要： A method of fabricating an array of structures sensitive to ESD is disclosed. First, an array of structures is provided on a substrate, with the structures conductively coupled by interconnections. Thereafter, the interconnections are removed before fabricating another array of structures. Therefore, the structures have equal potential. Further, an electrostatic discharge structure is provided near the periphery of the substrates.
摘要翻译：公开了一种制造对ESD敏感的结构阵列的方法。首先，在衬底上提供一组结构，其结构通过互连导电耦合。此后，在制造另一个结构阵列之前去除互连。因此，结构具有相同的潜力。此外，在基板的周边附近设置静电放电结构。

7. 发明授权

US06444505B1 Thin film transistor (TFT) structure with planarized gate electrode 失效
标题翻译：具有平坦化栅电极的薄膜晶体管（TFT）结构
公开(公告)号：US06444505B1
公开(公告)日：2002-09-03
申请号：US09678552
申请日：2000-10-04
申请人： Dou-I Chen , Jr-Hong Chen , Pi-Fu Chen , Wung-Ui Huang
发明人： Dou-I Chen , Jr-Hong Chen , Pi-Fu Chen , Wung-Ui Huang
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/78636
摘要： Within a method for forming a thin film transistor (TFT) structure, there is first provided a substrate. There is then formed over the substrate a gate electrode. There is then formed adjacent to the gate electrode but not covering a top surface of the gate electrode a backfilling dielectric layer. There is then formed over and covering the top surface of the gate electrode a gate dielectric layer. There is then formed over and covering the gate dielectric layer an active semiconductor layer. Finally, there is then formed over and in electrical communication with the active semiconductor layer a pair of source/drain electrodes, where the pair of source/drain electrodes having a separation distance which defines a channel region of the active semiconductor layer. The method for forming the thin film transistor (TFT) structure contemplates a thin film transistor (TFT) structure fabricated in accord with the method for forming the thin film transistor (TFT) structure. The method provides the thin film transistor (TFT) structure with enhanced functionality and reliability.
摘要翻译：在用于形成薄膜晶体管（TFT）结构的方法中，首先提供基板。然后在衬底上形成栅电极。然后形成在栅电极附近，但不覆盖栅电极的顶表面的回填电介质层。然后在栅电极的顶表面上形成栅极电介质层。然后形成并覆盖栅极电介质层有源半导体层。最后，然后在有源半导体层上形成一对源/漏电极，其中一对源极/漏极具有限定有源半导体层的沟道区的间隔距离。用于形成薄膜晶体管（TFT）结构的方法考虑了根据用于形成薄膜晶体管（TFT）结构的方法制造的薄膜晶体管（TFT）结构。该方法提供了具有增强的功能和可靠性的薄膜晶体管（TFT）结构。

8. 发明授权

US06362028B1 Method for fabricating TFT array and devices formed 有权
标题翻译：制造TFT阵列和器件的方法
公开(公告)号：US06362028B1
公开(公告)日：2002-03-26
申请号：US09377584
申请日：1999-08-19
申请人： Jr-Hong Chen , Tinghui Huang
发明人： Jr-Hong Chen , Tinghui Huang
IPC分类号： H01L2100
CPC分类号： G02F1/136213 , G02F1/136227
摘要： A method for fabricating a BCE type TFT array by using reduced number of masks and devices formed are disclosed. In the method, only five masks are required for forming the BCE type TFT array which is less than that normally required in a typical TFT fabrication process, i.e., at least six masks. The five masks required in the present invention process are a first mask for gate busline patterning, a second mask for island and S/D data line patterning, a third mask for the data line, TFT channel and Cst patterning, a fourth mask for the passivation layer patterning and a fifth mask for the conductive electrode layer patterning. The present invention novel method produces a TFT that has improved contact resistance between the S/D metal and the n+ amorphous silicon layer. The improved contact resistance is achieved by an immediate deposition process of a S/D metal thin film after the deposition of the n+ amorphous silicon layer such that any exposure of the interface to chemical contaminants and native oxide is substantially reduced or eliminated. The present invention novel method further provides the benefit that the Metal 2 layer shields the TFT island structure from plasma damages and residual photoresists resulting in a TFT array structure of improved reliability.
摘要翻译：公开了一种通过使用减少数量的掩模和形成的器件来制造BCE型TFT阵列的方法。在该方法中，形成BCE型TFT阵列仅需要五个掩膜，其小于通常在TFT制造工艺中通常所需的掩模，即至少六个掩模。在本发明方法中所需的五个掩模是用于栅极总线图案化的第一掩模，用于岛和S / D数据线图案化的第二掩模，用于数据线的第三掩模，TFT沟道和Cst图案化，第四掩模钝化层图案化和用于导电电极层图案化的第五掩模。本发明新颖的方法产生了在S / D金属和n +非晶硅层之间具有改善的接触电阻的TFT。改善的接触电阻通过在沉积n +非晶硅层之后立即沉积S / D金属薄膜来实现，使得界面对化学污染物和天然氧化物的任何暴露显着降低或消除。本发明的新颖方法还提供了金属2层屏蔽TFT岛结构免受等离子体损伤和残留光致抗蚀剂的益处，导致提高可靠性的TFT阵列结构。

9. 发明授权

US06323034B1 Amorphous TFT process 有权
标题翻译：非晶TFT工艺
公开(公告)号：US06323034B1
公开(公告)日：2001-11-27
申请号：US09373250
申请日：1999-08-12
申请人： Yeong-E Chen , Jr-Hong Chen , Ya-Hsiang Tai
发明人： Yeong-E Chen , Jr-Hong Chen , Ya-Hsiang Tai
IPC分类号： H01L2100
CPC分类号： H01L29/66765 , H01L29/41733
摘要： A thin film transistor design is described which is not subject to either dark or photo current leakage. The process to manufacture this device begins with the formation of a gate electrode on a transparent substrate followed by its over coating with layers of gate insulation, undoped amorphous silicon, doped amorphous silicon, and a second layer of chromium. The chromium and amorphous silicon layers are then patterned and etched to form a channel pedestal. In a key feature of the invention the vertical side walls of this pedestal are then given a protective coating of oxide or nitride, forming spacers. This is then followed by the deposition of second level metal which is etched to form source and drain electrodes with a suitable gap between them.
摘要翻译：描述了不受暗或光电流泄漏的薄膜晶体管设计。制造该器件的过程开始于在透明衬底上形成栅电极，然后在其上涂覆栅极绝缘层，未掺杂的非晶硅，掺杂的非晶硅和第二层的铬。然后将铬和非晶硅层图案化并蚀刻以形成通道基座。在本发明的关键特征中，该基座的垂直侧壁然后被赋予氧化物或氮化物的保护涂层，形成间隔物。然后，沉积第二级金属，其被蚀刻以形成在它们之间具有合适间隙的源极和漏极。

10. 发明授权

US5656197A Ferroelectric liquid crystal 失效
标题翻译：铁电液晶
公开(公告)号：US5656197A
公开(公告)日：1997-08-12
申请号：US384027
申请日：1995-02-06
申请人： Ging-Ho Hsiue , Jr-Hong Chen , Rong-Chi Chang
发明人： Ging-Ho Hsiue , Jr-Hong Chen , Rong-Chi Chang
IPC分类号： C08G77/38 , C09K19/40 , C09K19/52 , C08G77/04 , C09K19/20
CPC分类号： C08G77/38 , C09K19/408
摘要： A polymer of the following formula: ##STR1## wherein m is an integer from 1 to 100; n is an integer from 0 to 3; each of X and Y, independently, is biphenyl, 1,4-phenylene, or halogen-substituted 1,4-phenylene; and Z is R, --O--(C.dbd.O)--R, or --(C.dbd.O)--O--R, wherein R is selected from (2R)-2-(C.sub.4-8 alkyl), (1S,2S)-1-halo-2-methyl-1-(C.sub.3-5 alkyl), (2S)-2-methyl-1-(C.sub.4-7 alkyl), (2S)-1-halo-2-methyl-3-propyl, and (2S)-3-halo-2-methyl-1-(C.sub.4-7 alkyl); anda monomer of the following formula:H.sub.2 C.dbd.CH.sub.2 CH.sub.2 --(OCH.sub.2 CH.sub.2).sub.n --O--X--(C.dbd.O)--O--Y--Zwherein n is an integer from 0 to 3; each of X and Y independently is biphenyl, 1,4-phenylene, or halogen-substituted 1,4-phenylene; and Z is R, --O--(C.dbd.O)--R, or --(C.dbd.O)--O--R, wherein R is selected from (2R)-2-(C.sub.4-8 alkyl), (1S,2S)-1-halo-2-methyl-1-(C.sub.3-5 alkyl), (2S)-2-methyl-1-(C.sub.5-7 alkyl), (2S)-1-halo-2-methyl-3-propyl, and (2S)-3-halo-2-methyl-1-(C.sub.4-7 alkyl).
摘要翻译：下式的聚合物：其中m是1至100的整数; n为0〜3的整数。 X和Y各自独立地是联苯基，1,4-亚苯基或卤素取代的1,4-亚苯基; 并且Z为R，-O-（C = O）-R或 - （C = O）-OR，其中R选自（2R）-2-（C 4-8烷基），（1S，2S） - 1-卤代-2-甲基-1-（C3-5烷基），（2S）-2-甲基-1-（C4-7烷基），（2S）-1-卤代-2-甲基-3-丙基，和（2S）-3-卤代-2-甲基-1-（C 4-7烷基）; 和下式的单体：H 2 C = CH 2 CH 2 - （OCH 2 CH 2）n-O-X-（C = O）-O-Y-Z其中n为0-3的整数; X和Y各自独立地是联苯基，1,4-亚苯基或卤素取代的1,4-亚苯基; 并且Z为R，-O-（C = O）-R或 - （C = O）-OR，其中R选自（2R）-2-（C 4-8烷基），（1S，2S） - 1-（2-甲基-1-（C 5-8烷基），（2S）-2-甲基-1-（C 5-7烷基），（2S）-1-卤代-2-甲基-3-丙基，和（2S）-3-卤代-2-甲基-1-（C 4-7烷基）。

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