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1. 发明授权

US07572722B2 Method of fabricating nickel silicide 有权
标题翻译：制造硅化镍的方法
公开(公告)号：US07572722B2
公开(公告)日：2009-08-11
申请号：US11685209
申请日：2007-03-13
申请人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
发明人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
IPC分类号： H01L21/3205
CPC分类号： H01L29/665 , H01L21/324 , H01L29/4933
摘要： A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
摘要翻译：具有硅化镍的半导体器件和制造硅化镍的方法。提供具有多个掺杂区域的半导体衬底。随后，在半导体衬底上形成镍层，并进行第一快速热处理（RTP）以使镍层与设置在其下方的掺杂区域反应。此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

2. 发明申请

US20070054481A1 SEMICONDUCTOR DEVICE HAVING NICKEL SILICIDE AND METHOD OF FABRICATING NICKEL SILICIDE 有权
标题翻译：具有尼龙硅胶的半导体器件及其制造方法
公开(公告)号：US20070054481A1
公开(公告)日：2007-03-08
申请号：US11162360
申请日：2005-09-08
申请人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
发明人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
IPC分类号： H01L21/28
CPC分类号： H01L29/665 , H01L21/324 , H01L29/4933
摘要： A semiconductor device having nickel suicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
摘要翻译：一种具有镍硅化物的半导体器件和一种制造硅化镍的方法。提供具有多个掺杂区域的半导体衬底。接着，在半导体基板上形成镍层，进行第一快速热处理（RTP），使镍层与配置在其上的掺杂区域反应。此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

3. 发明授权

US07385294B2 Semiconductor device having nickel silicide and method of fabricating nickel silicide 有权
标题翻译：具有硅化镍的半导体器件和制造硅化镍的方法
公开(公告)号：US07385294B2
公开(公告)日：2008-06-10
申请号：US11162360
申请日：2005-09-08
申请人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
发明人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
IPC分类号： H01L23/48
CPC分类号： H01L29/665 , H01L21/324 , H01L29/4933
摘要： A semiconductor device having nickel silicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed thereunder. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
摘要翻译：具有硅化镍的半导体器件和制造硅化镍的方法。提供具有多个掺杂区域的半导体衬底。接着，在半导体基板上形成镍层，进行第一快速热处理（RTP），使镍层与配置在其上的掺杂区域反应。此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

4. 发明申请

US20070167009A1 METHOD OF FABRICATING NICKEL SILICIDE 有权
标题翻译：制备尼龙硅胶的方法
公开(公告)号：US20070167009A1
公开(公告)日：2007-07-19
申请号：US11685209
申请日：2007-03-13
申请人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
发明人： Yi-Wei Chen , Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yu-Lan Chang , Po-Chao Tsao , Chang-Chi Huang , Ming-Tsung Chen
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L21/324 , H01L29/4933
摘要： A semiconductor device having nickel suicide and a method for fabricating nickel silicide. A semiconductor substrate having a plurality of doped regions is provided. Subsequently, a nickel layer is formed on the semiconductor substrate, and a first rapid thermal process (RTP) is performed to react the nickel layer with the doped regions disposed there under. Thereafter, the unreacted nickel layer is removed, and a second rapid thermal process is performed to form a semiconductor device having nickel silicide. The second rapid thermal process is a spike anneal process whose process temperature is between 400 and 600° C.
摘要翻译：一种具有镍硅化物的半导体器件和一种制造硅化镍的方法。提供具有多个掺杂区域的半导体衬底。随后，在半导体衬底上形成镍层，并进行第一快速热处理（RTP）以使镍层与设置在其下方的掺杂区域反应。此后，除去未反应的镍层，进行第二快速热处理以形成具有硅化镍的半导体器件。第二快速热处理是工艺温度在400和600℃之间的尖峰退火工艺。

5. 发明申请

US20070087573A1 Pre-treatment method for physical vapor deposition of metal layer and method of forming metal silicide layer 审中-公开
标题翻译：金属层物理气相沉积预处理方法及形成金属硅化物层的方法
公开(公告)号：US20070087573A1
公开(公告)日：2007-04-19
申请号：US11255420
申请日：2005-10-19
申请人： Yi-Yiing Chiang , Chao-Ching Hsieh , Tzung-Yu Hung , Yu-Lan Chang , Chien-Chung Huang , Yi-Wei Chen
发明人： Yi-Yiing Chiang , Chao-Ching Hsieh , Tzung-Yu Hung , Yu-Lan Chang , Chien-Chung Huang , Yi-Wei Chen
IPC分类号： C03C25/68 , B05D3/00 , H01L21/302 , B44C1/22
CPC分类号： C23C14/021 , H01L21/28506 , H01L21/28518
摘要： A pre-treatment method for physical vapor deposition of a metal layer is provided. A substrate is first provided and then a dry cleaning process is performed to the substrate using a chemical etching process, in which the chemical etching process causes a reaction to the oxide. Thereafter, an annealing process is performed, followed by a cooling process. Due to the treatment prior to depositing of the metal layer, subsequent metal layers from ill effects are prevented.
摘要翻译：提供了用于金属层的物理气相沉积的预处理方法。首先提供衬底，然后使用化学蚀刻工艺对衬底进行干法处理，其中化学蚀刻工艺引起与氧化物的反应。此后，进行退火处理，随后进行冷却处理。由于在沉积金属层之前的处理，防止了不良影响的后续金属层。

6. 发明申请

US20080067684A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20080067684A1
公开(公告)日：2008-03-20
申请号：US11944462
申请日：2007-11-23
申请人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
发明人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
IPC分类号： H01L23/48
CPC分类号： H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.
摘要翻译：提供了包括至少一个导电结构的半导体器件。导电结构包括含硅导电层，难熔金属硅化物层和保护层。难熔金属硅化物层设置在含硅导电层上。保护层设置在难熔金属硅化物层上。还提供了包括至少一个导电结构的另一半导体器件。导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。难熔金属合金自对准硅化物层设置在含硅导电层的上方。难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。保护层设置在难熔金属合金自对准硅化物层上。

7. 发明申请

US20070082494A1 METHOD FOR FORMING SILICIDE LAYER 审中-公开
标题翻译：形成硅胶层的方法
公开(公告)号：US20070082494A1
公开(公告)日：2007-04-12
申请号：US11538061
申请日：2006-10-03
申请人： Yi-Wei Chen , Yi-Yiing Chiang , Yu-Lan Chang , Tzung-Yu Hung , Chao-Ching Hsieh
发明人： Yi-Wei Chen , Yi-Yiing Chiang , Yu-Lan Chang , Tzung-Yu Hung , Chao-Ching Hsieh
IPC分类号： C23F1/00 , H01L21/311 , B44C1/22
CPC分类号： H01L21/02057 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming a metal silicide over a substrate is provided. The method comprises steps of performing a fluorine-containing plasma treatment on the substrate to remove a plurality of residual over the substrate, wherein the fluorine-containing plasma treatment is performed in a first tool system. Then, a vacuum system of the first tool system is broken. The substrate is transferred from the first tool system into a second tool system. A metal silicide layer is formed over the substrate in the second tool system.
摘要翻译：提供了一种在衬底上形成金属硅化物的方法。所述方法包括以下步骤：在所述基板上进行含氟等离子体处理以除去所述基板上的多个残留物，其中所述含氟等离子体处理在第一工具系统中进行。然后，第一工具系统的真空系统被破坏。基板从第一工具系统转移到第二工具系统中。在第二工具系统中的衬底上形成金属硅化物层。

8. 发明申请

US20070020925A1 METHOD OF FORMING A NICKEL PLATINUM SILICIDE 审中-公开
标题翻译：形成镍硅酸钠的方法
公开(公告)号：US20070020925A1
公开(公告)日：2007-01-25
申请号：US11161075
申请日：2005-07-22
申请人： Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yi-Wei Chen , Yu-Lan Chang
发明人： Chao-Ching Hsieh , Yi-Yiing Chiang , Tzung-Yu Hung , Yi-Wei Chen , Yu-Lan Chang
IPC分类号： H01L21/44
CPC分类号： H01L21/28518 , H01L21/28052
摘要： A substrate having at least one silicon device is provided. A nickel platinum alloy layer is formed on the substrate. A rapid thermal process is performed to react the nickel platinum alloy layer with the silicon device to produce a nickel platinum silicide. A passivation layer is formed on the nickel platinum silicide followed by using a solution consisting of nitric acid and hydrochloric acid to remove unreacted portions of the nickel platinum alloy layer.
摘要翻译：提供具有至少一个硅器件的衬底。在该基板上形成镍铂合金层。执行快速热处理以使镍铂合金层与硅器件反应以产生镍铂硅化物。在镍铂硅化物上形成钝化层，然后使用由硝酸和盐酸组成的溶液来除去镍铂合金层的未反应部分。

9. 发明授权

US07344978B2 Fabrication method of semiconductor device 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US07344978B2
公开(公告)日：2008-03-18
申请号：US11160233
申请日：2005-06-15
申请人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
发明人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
IPC分类号： H01L21/44
CPC分类号： H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.
摘要翻译：提供了包括至少一个导电结构的半导体器件。导电结构包括含硅导电层，难熔金属硅化物层和保护层。难熔金属硅化物层设置在含硅导电层上。保护层设置在难熔金属硅化物层上。还提供了包括至少一个导电结构的另一个半导体器件。导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。难熔金属合金自对准硅化物层设置在含硅导电层的上方。难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。保护层设置在难熔金属合金自对准硅化物层上。

10. 发明申请

US20060284263A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20060284263A1
公开(公告)日：2006-12-21
申请号：US11160233
申请日：2005-06-15
申请人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
发明人： Yu-Lan Chang , Chao-Ching Hsieh , Yi-Yiing Chiang , Yi-Wei Chen , Tzung-Yu Hung
IPC分类号： H01L29/94
CPC分类号： H01L29/665 , H01L29/6659 , H01L29/7833 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device including at least one conductive structure is provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal salicide layer and a protection layer. The refractory metal salicide layer is disposed over the silicon-containing conductive layer. The protection layer is disposed over the refractory metal salicide layer. Another semiconductor device including at least one conductive structure is also provided. The conductive structure includes a silicon-containing conductive layer, a refractory metal alloy salicide layer and a protection layer. The refractory metal alloy salicide layer is disposed over the silicon-containing conductive layer. The refractory metal alloy salicide layer is formed from a reaction of silicon of the silicon-containing conductive layer and a refractory metal alloy layer which includes a first refractory metal and a second refractory metal. The protection layer is disposed over the refractory metal alloy salicide layer.
摘要翻译：提供了包括至少一个导电结构的半导体器件。导电结构包括含硅导电层，难熔金属硅化物层和保护层。难熔金属硅化物层设置在含硅导电层上。保护层设置在难熔金属硅化物层上。还提供了包括至少一个导电结构的另一半导体器件。导电结构包括含硅导电层，难熔金属合金自对准硅化物层和保护层。难熔金属合金自对准硅化物层设置在含硅导电层的上方。难熔金属合金自对准硅化物层由含硅导电层的硅与含有第一耐火金属和第二难熔金属的难熔金属合金层的反应形成。保护层设置在难熔金属合金自对准硅化物层上。

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