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1. 发明申请

US20110168670A1 Patterned Sapphire Substrate Manufacturing Method 审中-公开
标题翻译：图案蓝宝石基板制造方法
公开(公告)号：US20110168670A1
公开(公告)日：2011-07-14
申请号：US12687510
申请日：2010-01-14
申请人： Yew-Chung Sermon Wu , Chi-Hao Cheng , Bo-Wen Lin , Wen-Ching Hsu , Szu-Hua Ho
发明人： Yew-Chung Sermon Wu , Chi-Hao Cheng , Bo-Wen Lin , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： C23F1/00
CPC分类号： G03F7/00
摘要： A patterned sapphire substrate manufacturing method uses two-section dip etching procedure to improve the lateral etching rate at each etching position, so as to produce a concave-convex pattern composed of a plurality of triangular pyramid structures protruded from a surface onto an upper surface of a sapphire substrate, such that less planar area of the sapphire substrate surface will remain, and a mixed solution of sulfuric acid and phosphoric acid is used in a first dip etching step, and pure phosphoric acid or a mixed solution of sulfuric acid and phosphoric acid is used in a second dip etching step for etching the sapphire substrate to control the inclination of each triangular pyramid structure precisely, and providing a better light extraction rate for later manufactured light emitting diodes.
摘要翻译：图案化蓝宝石衬底制造方法使用两段浸渍蚀刻方法来改善每个蚀刻位置处的横向蚀刻速率，以便产生由多个三角锥体结构组成的凹凸图案，所述凹凸图案从表面突出到使蓝宝石衬底表面的平坦面积较小的蓝宝石衬底，在第一浸渍蚀刻工序中使用硫酸和磷酸的混合溶液，纯磷酸或硫酸与磷酸的混合溶液用于蚀刻蓝宝石衬底的第二浸渍蚀刻步骤，以精确地控制每个三角锥形结构的倾斜度，并为稍后制造的发光二极管提供更好的光提取率。

2. 发明申请

US20120292630A1 LED SUBSTRATE AND LED 审中-公开
标题翻译： LED基板和LED
公开(公告)号：US20120292630A1
公开(公告)日：2012-11-22
申请号：US13154445
申请日：2011-06-07
申请人： Yew-Chung Sermon Wu , Feng-Ching Hsiao , Yu-Chung Chen , Bo-Hsiang Tseng , Bo-Wen Lin , Chun-Yen Peng , Wen-Ching Hsu
发明人： Yew-Chung Sermon Wu , Feng-Ching Hsiao , Yu-Chung Chen , Bo-Hsiang Tseng , Bo-Wen Lin , Chun-Yen Peng , Wen-Ching Hsu
IPC分类号： H01L33/22 , H01L33/30
CPC分类号： H01L33/32 , H01L33/007
摘要： A light emitting diode (LED) substrate including a sapphire substrate is provided. The sapphire substrate has a surface consisting of a plurality of upper trigonal and lower hexagonal tapers, wherein each of the upper trigonal and lower hexagonal tapers is consisted of a hexagonal taper and a trigonal taper on the hexagonal taper, and a pitch of the upper trigonal and lower hexagonal tapers is less than 10 μm. This LED substrate has high light-emitting efficiency.
摘要翻译：提供了包括蓝宝石衬底的发光二极管（LED）衬底。蓝宝石衬底具有由多个上三角和六边形锥形组成的表面，其中上三角形和六边形锥形中的每一个由六边形锥形和六边形锥形上的三角锥形组成，并且上三角形而较低的六角形锥度小于10μm。该LED基板具有高发光效率。

3. 发明申请

US20110003420A1 Fabrication method of gallium nitride-based compound semiconductor 审中-公开
标题翻译：氮化镓基化合物半导体的制造方法
公开(公告)号：US20110003420A1
公开(公告)日：2011-01-06
申请号：US12592926
申请日：2009-12-04
申请人： Miin-Jang Chen , Sheng-Fu Yu , Ray-Ming Lin , Wen-Ching Hsu , Szu-Hua Ho
发明人： Miin-Jang Chen , Sheng-Fu Yu , Ray-Ming Lin , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L21/0262 , H01L21/0237 , H01L21/02403 , H01L21/0242 , H01L21/0243 , H01L21/02458 , H01L21/02472 , H01L21/02507 , H01L21/0254 , H01L33/007 , H01L33/12
摘要： The present invention discloses a method for fabricating gallium nitride(GaN)-based compound semiconductors. Particularly, this invention relates to a method of forming a transition layer on a zinc oxide (ZnO)-based semiconductor layer by the steps of forming a wetting layer and making the wetting layer nitridation. The method not only provides a function of protecting the ZnO-based semiconductor layer, but also uses the transition layer as a buffer layer for a following epitaxial growth of a GaN-based semiconductor layer, and thus, the invention may improve the crystal quality of the GaN-based semiconductor layer effectively.
摘要翻译：本发明公开了一种制造氮化镓（GaN）基化合物半导体的方法。特别地，本发明涉及通过形成润湿层并进行润湿层氮化的步骤在基于氧化锌（ZnO）的半导体层上形成过渡层的方法。该方法不仅提供保护ZnO类半导体层的功能，而且还使用过渡层作为GaN类半导体层的随后的外延生长的缓冲层，因此本发明可以提高晶体质量 GaN基半导体层。

4. 发明授权

US07927910B2 Manufacturing method of solar cell 有权
标题翻译：太阳能电池制造方法
公开(公告)号：US07927910B2
公开(公告)日：2011-04-19
申请号：US12493209
申请日：2009-06-28
申请人： Lu-Sheng Hong , Wen-Ching Hsu , Szu-Hua Ho
发明人： Lu-Sheng Hong , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： H01L21/00
CPC分类号： H01L31/028 , H01L31/022441 , H01L31/02363 , H01L31/03762 , H01L31/0682 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists.
摘要翻译：本发明公开了一种太阳能电池的制造方法，其特征在于，在晶片的同一侧形成两个电极层，避免入射到另一侧的太阳光被电极层阻挡，提高光电转换效率，通过使用掩模层进行气相沉积工艺形成，而不需要任何掩模光刻或蚀刻工艺。当然，不再存在劣化晶片质量的高温处理的问题。

5. 发明申请

US20090050914A1 SEMICONDUCTOR LIGHT-EMITTING DEVICE WITH SELECTIVELY FORMED BUFFER LAYER ON SUBSTRATE 有权
标题翻译：具有选择性形成的缓冲层在基板上的半导体发光器件
公开(公告)号：US20090050914A1
公开(公告)日：2009-02-26
申请号：US12196911
申请日：2008-08-22
申请人： Miin-Jang Chen , Wen-Ching Hsu , Szu-Hua Ho
发明人： Miin-Jang Chen , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： H01L33/00
CPC分类号： H01L33/007 , H01L33/12
摘要： The invention discloses a semiconductor light-emitting device and a method of fabricating the same. The semiconductor light-emitting device according to the invention includes a substrate, a buffer layer, a multi-layer structure, and an ohmic electrode structure. The buffer layer is selectively formed on an upper surface of the substrate such that the upper surface of the substrate is partially exposed. The multi-layer structure is formed to overlay the buffer layer and the exposed upper surface of the substrate. The multi-layer structure includes a light-emitting region. The buffer layer assists a bottom-most layer of the multi-layer structure in lateral and vertical epitaxial growth. The ohmic electrode structure is formed on the multi-layer structure.
摘要翻译：本发明公开了一种半导体发光器件及其制造方法。根据本发明的半导体发光器件包括衬底，缓冲层，多层结构和欧姆电极结构。缓冲层选择性地形成在衬底的上表面上，使得衬底的上表面部分露出。形成多层结构以覆盖缓冲层和暴露的衬底的上表面。多层结构包括发光区域。缓冲层在横向和垂直外延生长中辅助多层结构的最底层。欧姆电极结构形成在多层结构上。

6. 发明申请

US20090104455A1 TRANSPARENT CONDUCTIVE COMPONENT UTILIZED IN TOUCH PANEL 审中-公开
标题翻译：透明导电元件在触控面板中的应用
公开(公告)号：US20090104455A1
公开(公告)日：2009-04-23
申请号：US12255915
申请日：2008-10-22
申请人： Miin-Jang Chen , Wen-Ching Hsu , Szu-Hua Ho
发明人： Miin-Jang Chen , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： B32B17/06 , B32B18/00
CPC分类号： C04B35/453 , C03C17/245 , C03C2217/216 , C03C2217/24 , C03C2217/944 , C03C2218/365 , C04B35/62218 , C23C16/407 , C23C16/45525 , G06F3/044 , G06F3/045 , Y10T428/31507 , Y10T428/31533 , Y10T428/31721 , Y10T428/31786 , Y10T428/31935
摘要： The invention discloses a transparent conductive component utilized in a touch panel. The transparent conductive component according to the invention includes a transparent substrate and a ZnO film. The transparent substrate has an upper surface. The ZnO film is formed by an atomic layer deposition process and/or a plasma-enhanced (or a plasma-assisted) atomic layer deposition process on the upper surface of the transparent substrate.
摘要翻译：本发明公开了一种在触摸面板中使用的透明导电部件。根据本发明的透明导电组分包括透明基底和ZnO薄膜。透明基板具有上表面。通过在透明基板的上表面上的原子层沉积工艺和/或等离子体增强（或等离子体辅助）原子层沉积工艺形成ZnO膜。

7. 发明申请

US20100330730A1 Manufacturing Method of Solar Cell 有权
标题翻译：太阳能电池制造方法
公开(公告)号：US20100330730A1
公开(公告)日：2010-12-30
申请号：US12493209
申请日：2009-06-28
申请人： Lu-Sheng HONG , Wen-Ching Hsu , Szu-Hua Ho
发明人： Lu-Sheng HONG , Wen-Ching Hsu , Szu-Hua Ho
IPC分类号： H01L31/18 , H01L21/28
CPC分类号： H01L31/028 , H01L31/022441 , H01L31/02363 , H01L31/03762 , H01L31/0682 , H01L31/075 , H01L31/202 , Y02E10/547 , Y02E10/548 , Y02P70/521
摘要： The present invention discloses a method of manufacturing a solar cell by forming two electrode layers on the same side of a wafer, and avoiding sunlight incident to another side from being blocked by the electrode layers to enhance the photoelectric conversion efficiency, and each electrode layer is formed by using a mask layer to perform a vapor deposition process, without requiring any mask lithography or etching process. Of course, the issue of a high-temperature process that deteriorates the quality of the wafer no longer exists.
摘要翻译：本发明公开了一种太阳能电池的制造方法，其特征在于，在晶片的同一侧形成两个电极层，避免入射到另一侧的太阳光被电极层阻挡，提高光电转换效率，通过使用掩模层进行气相沉积工艺形成，而不需要任何掩模光刻或蚀刻工艺。当然，不再存在劣化晶片质量的高温处理的问题。

8. 发明申请

US20120305965A1 LIGHT EMITTING DIODE SUBSTRATE AND LIGHT EMITTING DIODE 有权
标题翻译：发光二极管基板和发光二极管
公开(公告)号：US20120305965A1
公开(公告)日：2012-12-06
申请号：US13472480
申请日：2012-05-16
申请人： Bo-Hsiang Tseng , Yi-Shan Hsieh , Bo-Wen Lin , Kun-Lin Yang , Chun-Yen Peng , Wen-Ching Hsu
发明人： Bo-Hsiang Tseng , Yi-Shan Hsieh , Bo-Wen Lin , Kun-Lin Yang , Chun-Yen Peng , Wen-Ching Hsu
IPC分类号： H01L33/54
CPC分类号： H01L33/32 , H01L33/007
摘要： A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of irregular hexagonal pyramid structures, wherein a pitch of the irregular hexagonal pyramid structure is less than 10 μm. A symmetrical cross-sectional plane of each of the irregular hexagonal pyramid structures has a first base angle and a second base angle, wherein the second base angle is larger than the first base angle, and the second base angle is 50° to 70°. This LED substrate has high light-emitting efficiency.
摘要翻译：发光二极管（LED）衬底包括蓝宝石衬底，其特征在于具有由不规则的六角锥结构组成的表面，其中不规则六角锥结构的间距小于10μm。每个不规则六边形金字塔结构的对称横截面具有第一底角和第二底角，其中第二底角大于第一底角，第二底角为50°至70°。该LED基板具有高的发光效率。

9. 发明申请

US20120273821A1 METHOD FOR PATTERNING AN EPITAXIAL SUBSTRATE, A LIGHT EMITTING DIODE AND A METHOD FOR FORMING A LIGHT EMITTING DIODE 有权
标题翻译：用于形成外源基板的方法，发光二极管和形成发光二极管的方法
公开(公告)号：US20120273821A1
公开(公告)日：2012-11-01
申请号：US13450424
申请日：2012-04-18
申请人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
发明人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
IPC分类号： H01L33/22 , H01L33/00 , H01L21/311
CPC分类号： H01L33/22 , H01L33/007
摘要： A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
摘要翻译：用于图案化外延衬底的方法包括：（a）在外延衬底上形成蚀刻掩模层，并且使用图案化的掩模掩模层图案化蚀刻掩模层，以将蚀刻掩模层形成为多个间隔开的掩模图案; 和（b）蚀刻从掩模图案曝光的外延基板，以及去除掩模图案，使得外延基板形成有多个间隔开的基板图案。

10. 发明授权

US08742442B2 Method for patterning an epitaxial substrate, a light emitting diode and a method for forming a light emitting diode 有权
标题翻译：图案化外延衬底的方法，发光二极管和形成发光二极管的方法
公开(公告)号：US08742442B2
公开(公告)日：2014-06-03
申请号：US13450424
申请日：2012-04-18
申请人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
发明人： Cheng-Hung Wei , Bo-Wen Lin , Ching-Yen Peng , Hao-Chung Kuo , Wen-Ching Hsu
IPC分类号： H01L33/20
CPC分类号： H01L33/22 , H01L33/007
摘要： A method for patterning an epitaxial substrate includes: (a) forming an etch mask layer over an epitaxial substrate, and patterning the etch mask layer using a patterned cover mask layer to form the etch mask layer into a plurality of spaced apart mask patterns; and (b) etching the epitaxial substrate that is exposed from the mask patterns, and removing the mask patterns such that the epitaxial substrate is formed with a plurality of spaced apart substrate patterns.
摘要翻译：用于图案化外延衬底的方法包括：（a）在外延衬底上形成蚀刻掩模层，并且使用图案化的掩模掩模层图案化蚀刻掩模层，以将蚀刻掩模层形成为多个间隔开的掩模图案; 和（b）蚀刻从掩模图案曝光的外延基板，以及去除掩模图案，使得外延基板形成有多个间隔开的基板图案。

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