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    • 3. 发明申请
    • Plasma processing apparatus and control method thereof
    • 等离子体处理装置及其控制方法
    • US20060061287A1
    • 2006-03-23
    • US11076922
    • 2005-03-11
    • Sang JeonChin ChungDo Kam
    • Sang JeonChin ChungDo Kam
    • H01J7/24
    • H01J37/3266H01J37/321H05H1/46
    • A plasma processing apparatus effectively generates plasma in a large area by applying an external magnetic field generated by an electromagnet to the plasma in a direction which is not in parallel with a wall of a plasma container, such that the magnetic field diverge or converge in the vicinity of a work piece (for example, a wafer). The plasma processing apparatus includes a power supply to generate a high frequency power, an antenna to receive the high frequency power and to generate an electromagnetic field, a chamber to generate the plasma using power generated through the electromagnetic field, and a coil provided on a side wall of the chamber to disrupt a uniformity of the electromagnetic field within the chamber.
    • 等离子体处理装置通过在与等离子体容器的壁不平行的方向上将由电磁体产生的外部磁场施加到等离子体而大面积地产生等离子体,使得磁场在等离子体容器中发散或会聚 工件附近(例如,晶片)。 等离子体处理装置包括用于产生高频电力的电源,接收高频电力并产生电磁场的天线,使用通过电磁场产生的电力产生等离子体的室,以及设置在电磁场上的线圈 该室的侧壁破坏室内的电磁场的均匀性。