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    • 6. 发明授权
    • Silicon nitride ceramic and process for forming the same
    • 氮化硅陶瓷及其形成方法
    • US5767026A
    • 1998-06-16
    • US633797
    • 1996-04-10
    • Naoki KondohFumihiro WakaiYoshihiro ObataAkira YamakawaTakao NishiokaMasashi Yoshimura
    • Naoki KondohFumihiro WakaiYoshihiro ObataAkira YamakawaTakao NishiokaMasashi Yoshimura
    • B28B1/00C04B35/584C04B35/593C04B35/597C04B35/599C04B35/626
    • C04B35/593C04B35/597
    • There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.
    • PCT No.PCT / JP95 / 02026 Sec。 371日期:1996年4月10日 102(e)日期1996年4月10日PCT提交1995年10月4日PCT公布。 公开号WO96 / 10546 日本特开1996年4月11日提供了一种形成氮化硅烧结体的方法,其包括塞隆烧结体,通过使烧结体的大部分超塑性作为简单材料而不被形成为复合材料而形成,并形成 通过上述方法制造的烧结体。 一种氮化硅烧结体(包括赛隆烧结体),其相对密度至少为95%,线密度为120-250,以二维截面为单位长度的每50微米的颗粒数 该烧结体通过在1300〜1700℃的拉伸或压缩压力下以至多10-1 /秒的应变速率的塑性变形形成。所形成的烧结体的取向度为5〜80 %,根据Saltykov规定的方法,线密度为80〜200,特别是在常温下,具有优异的机械性能。