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    • 1. 发明授权
    • Liquid crystal device, image display apparatus and image forming
apparatus
    • 液晶装置,图像显示装置和图像形成装置
    • US5986736A
    • 1999-11-16
    • US637374
    • 1996-04-25
    • Yasuto KoderaKenji OnumaBunryo SatoTadashi MiharaMasamichi SaitoTakatsugu WadaKazuhiro AoyamaSeishi MiuraKouki Nukanobu
    • Yasuto KoderaKenji OnumaBunryo SatoTadashi MiharaMasamichi SaitoTakatsugu WadaKazuhiro AoyamaSeishi MiuraKouki Nukanobu
    • G02F1/1337G02F1/1339G02F1/141
    • G02F1/1339G02F1/133753G02F1/141
    • A liquid crystal device is formed by a pair of substrates each having thereon electrodes, and a liquid crystal disposed between the substrates so as to be movable along surfaces of the substrates. The liquid crystal is disposed over regions extending between the surfaces of the substrates including an effective optical modulation region, a first peripheral region outside the effective optical modulation region and a second peripheral region formed along a part or an entirety of outer periphery of the first peripheral region. The liquid crystal is disposed to have a higher liquid crystal molecular pretilt angle in the first peripheral region than in the effective optical modulation region. The liquid crystal is disposed in a random alignment state free from uniaxial alignment characteristic or in a layer structure in the second peripheral region. As a result, the liquid crystal molecular movement along the extension of substrates is suppressed in the effective optical modulation region and in the second peripheral region and relatively allowed in the first peripheral region, so that the impurities in the liquid crystal are confined in the second peripheral region while avoiding the liquid crystal thickness irregularity.
    • 液晶装置由各自具有电极的一对基板和设置在基板之间的液晶形成,以便能够沿着基板的表面移动。 液晶布置在基板表面之间延伸的区域上,该区域包括有效的光学调制区域,有效光学调制区域外的第一周边区域和沿着第一外围的外周的一部分或全部形成的第二周边区域 地区。 液晶被配置为在第一周边区域中具有比在有效光学调制区域中更高的液晶分子预倾角。 液晶以无轴对准特性或第二周边区域的层结构的随机取向状态配置。 结果,在有效光调制区域和第二周边区域中抑制了沿着基板延伸的液晶分子运动,并且在第一周边区域中相对允许液晶分子运动,使得液晶中的杂质被限制在第二 周边区域,同时避免液晶厚度不规则。
    • 7. 发明授权
    • Bolt and nut
    • 螺栓和螺母
    • US06796761B2
    • 2004-09-28
    • US10253040
    • 2002-09-24
    • Hiromichi MizunoMasahiko HamadaTetsuya OsawaKazuhiro AoyamaMitsuru Kozawa
    • Hiromichi MizunoMasahiko HamadaTetsuya OsawaKazuhiro AoyamaMitsuru Kozawa
    • F16B2500
    • F16B35/047F16B37/00
    • A bolt is provided with a head part and a shank part. The shank part includes a first constant diameter cylindrical part, a transition part, a cylindrical connection part, and a second constant diameter cylindrical part concentrically extending from the first constant diameter cylindrical part to the second constant diameter cylindrical part. The first constant diameter cylindrical part has a screw thread with a predetermined pitch formed on the side surface thereof. The transition part has a tapered shape and has a screw thread with a predetermined pitch formed on the side surface thereof. The cylindrical connection part has a diameter smaller than that of the first constant diameter part. The second constant diameter cylindrical part has a diameter smaller than the first constant diameter part, and has a screw thread with a predetermined pitch formed on the side surface thereof. The crest part of the screw thread formed on the side surface of the transition part is truncated.
    • 螺栓设置有头部和柄部。 柄部分包括第一恒定直径圆柱形部分,过渡部分,圆柱形连接部分和从第一恒定直径圆柱形部分同心地延伸到第二恒定直径圆柱形部分的第二恒定直径圆柱形部分。 第一恒定直径的圆柱形部分具有形成在其侧表面上的预定间距的螺纹。 过渡部分具有锥形形状并且具有形成在其侧表面上的预定间距的螺纹。 圆筒形连接部分的直径小于第一恒定直径部分的直径。 第二恒定直径的圆筒部的直径小于第一恒定直径部,并且在其侧面形成有规定间距的螺纹。 形成在过渡部分的侧表面上的螺纹的顶部被截断。
    • 8. 发明授权
    • CVD system and CVD process
    • CVD系统和CVD工艺
    • US06190457B1
    • 2001-02-20
    • US08952517
    • 1997-11-21
    • Takayuki AraiJunichi HidakaKoh MatsumotoNakao AkutsuKazuhiro AoyamaYoshiaki InaishiIchitaro Waki
    • Takayuki AraiJunichi HidakaKoh MatsumotoNakao AkutsuKazuhiro AoyamaYoshiaki InaishiIchitaro Waki
    • C23C1600
    • C23C16/45514C23C16/455C23C16/45591C30B25/02C30B25/14C30B29/40C30B29/403C30B29/406C30B29/42
    • Provided are a CVD system and a CVD process which can grow excellent compound semiconductor thin films of two or more components having least defects and which enjoy high source gas utilization efficiency and increased productivity. According to the CVD system and the CVD process, at least two kinds of source gases are introduced parallel to the surface of a substrate 11 placed in a reactor 10 to grow a compound semiconductor thin film of two or more components on the surface of the substrate 11. The CVD system contains two separators 18, 19 disposed in the reactor 10 on the upstream side of the substrate mounting section to be parallel to the surface of the substrate 11 so as to define in the reactor three parallel layers of passages consisting of a first passage 20, a second passage 21 and a third passage 22; a first CVD gas introducing pipe 23 communicating to the first passage 20; a second CVD gas introducing pipe 24 communicating to the second passage 21; and a deposition accelerating gas introducing pipe 25 communicating to the third passage 22.
    • 提供一种可以生长具有最少缺陷并且具有高源气体利用效率和提高的生产率的两种或更多种组分的优异的化合物半导体薄膜的CVD系统和CVD方法。 根据CVD系统和CVD工艺,将平行于放置在反应器10中的基板11的表面平行地引入至少两种源气体,以在基板的表面上生长两个或更多个部件的化合物半导体薄膜 CVD系统包含设置在反应器10中的两个分离器18,19,其位于衬底安装部分的上游侧,以平行于衬底11的表面,以便在反应器中限定三个平行的通道层, 第一通道20,第二通道21和第三通道22; 与第一通道20连通的第一CVD气体导入管23; 与第二通道21连通的第二CVD气体导入管24; 以及与第三通路22连通的沉积加速气体导入管25。