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1. 发明授权

US5607718A Polishing method and polishing apparatus 失效
标题翻译：抛光方法和抛光装置
公开(公告)号：US5607718A
公开(公告)日：1997-03-04
申请号：US300127
申请日：1994-09-02
申请人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
发明人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
IPC分类号： B24B37/015 , B24B49/14 , B24B57/02 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , B05D5/12 , C03C15/00 , H01L21/465
CPC分类号： B24B37/015 , B24B57/02 , H01L21/02074 , H01L21/3212 , H01L21/3213 , H01L21/7684
摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管，抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度代理商

2. 发明授权

US5775980A Polishing method and polishing apparatus 失效
标题翻译：抛光方法和抛光装置
公开(公告)号：US5775980A
公开(公告)日：1998-07-07
申请号：US743044
申请日：1996-11-04
申请人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
发明人： Yasutaka Sasaki , Mie Matsuo , Rempei Nakata , Junichi Wada , Nobuo Hayasaka , Hiroyuki Yano , Haruo Okano
IPC分类号： B24B37/015 , B24B49/14 , B24B57/02 , H01L21/02 , H01L21/321 , H01L21/3213 , H01L21/768 , B24B5/00
CPC分类号： B24B37/015 , B24B57/02 , H01L21/02074 , H01L21/3212 , H01L21/3213 , H01L21/7684
摘要： This invention provides a polishing method including the steps of forming a film to be polished on a substrate having a recessed portion in its surface so as to fill at least the recessed portion, and selectively leaving the film to be polished behind in the recessed portion by polishing the film by using a polishing agent containing polishing particles and a solvent, and having a pH of 7.5 or more. The invention also provides a polishing apparatus including a polishing agent storage vessel for storing a polishing agent, a turntable for polishing an object to be polished, a polishing agent supply pipe for supplying the polishing agent from the polishing agent storage vessel onto the turntable, a polishing object holding jig for holding the object to be polished such that the surface to be polished of the object opposes the turntable, and a polishing agent supply pipe temperature adjusting unit, connected to the polishing agent supply pipe, for adjusting the temperature of the polishing agent.
摘要翻译：本发明提供了一种抛光方法，包括以下步骤：在其表面上具有凹陷部分的基底上形成待研磨的膜，以便至少填充凹部，并且通过在凹部中选择性地将被抛光的膜留在后面通过使用含有研磨粒子和溶剂的研磨剂，pH为7.5以上来研磨该膜。本发明还提供了一种抛光装置，其包括：用于存储抛光剂的抛光剂储存容器，用于抛光待抛光对象物的转盘，用于将抛光剂从抛光剂储存容器供应到转台上的抛光剂供给管，抛光对象保持夹具，用于保持待抛光对象物，使被处理物体的表面与转盘相对;抛光剂供给管温度调节单元，连接到抛光剂供应管，用于调节抛光温度代理商

3. 发明授权

US08257504B2 Surface treatment composition, surface treatment method, and method for manufacturing semiconductor device 有权
标题翻译：表面处理组合物，表面处理方法以及半导体装置的制造方法
公开(公告)号：US08257504B2
公开(公告)日：2012-09-04
申请号：US12794028
申请日：2010-06-04
申请人： Yasumasa Mori , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
发明人： Yasumasa Mori , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
IPC分类号： C25F3/30
CPC分类号： C09K3/1472 , H01L21/02074 , H01L21/321
摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.
摘要翻译：本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降可以抑制异常氧化。而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度可以抑制。

4. 发明申请

US20100311630A1 SURFACE TREATMENT COMPOSITION, SURFACE TREATMENT METHOD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
标题翻译：表面处理组合物，表面处理方法和制造半导体器件的方法
公开(公告)号：US20100311630A1
公开(公告)日：2010-12-09
申请号：US12794028
申请日：2010-06-04
申请人： Yasumasa MORI , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
发明人： Yasumasa MORI , Hirotaka Shida , Kazuo Kawaguchi , Hiroyuki Yano , Mie Matsuo
IPC分类号： C11D7/32
CPC分类号： C09K3/1472 , H01L21/02074 , H01L21/321
摘要： A surface treatment composition of this invention is a composition for treating a metal wiring-including surface of a semiconductor substrate, which includes a compound (A) represented by a specific structural formula and a solvent (B) having a boiling point at one atmospheric pressure of 50 to 300° C., and has a pH of 4 to 11.According to the surface treatment composition of the present invention, oxidation of metal wiring of a semiconductor substrate can be suppressed and deterioration of the flatness of the metal wiring portion due to unusual oxidation can be suppressed. Furthermore, when an insulating film or a barrier metal film is present on a metal wiring-including surface of the semiconductor substrate, fang and surface roughness of the metal wiring occurring in the interface between the metal wiring and the insulating film or the barrier metal film can be suppressed.
摘要翻译：本发明的表面处理组合物是用于处理包含由特定结构式表示的化合物（A）和沸点为一个大气压的溶剂（B）的半导体衬底的包含金属线的表面的组合物为50〜300℃，pH为4〜11。根据本发明的表面处理用组合物，能够抑制半导体基板的金属配线的氧化，使金属配线部的平坦度下降可以抑制异常氧化。而且，在半导体基板的含有金属配线的表面上存在绝缘膜或阻挡金属膜的情况下，金属配线与绝缘膜或阻挡金属膜之间的界面处的金属配线的表面粗糙度可以抑制。

5. 发明授权

US06409780B1 Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices 有权
标题翻译：气相处理无机氧化物颗粒的含水固体物质和用于半导体器件的抛光和制造方法的浆料
公开(公告)号：US06409780B1
公开(公告)日：2002-06-25
申请号：US09482937
申请日：2000-01-14
申请人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
发明人： Hiroyuki Yano , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Kiyonobu Kubota
IPC分类号： C09K314
CPC分类号： C09G1/02 , C09K3/1463
摘要： Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm3 in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.
摘要翻译：提供含水固体物质，其通过向通过热解法或金属蒸发氧化法合成的100重量份的无机氧化物颗粒中加入40至300重量份的水而获得，提供了通过使用水 - 负载固体物质，以及使用上述浆料制造半导体器件的方法。所述含水固体物质的体积密度为0.3〜3g / cm 3，制粒时的平均粒径为0.5〜100mmφ的范围。用于抛光的所述浆料由含水固体物质制成，其在分散在水中的平均粒径在0.05-1.0μm的范围内。

6. 发明授权

US06375545B1 Chemical mechanical method of polishing wafer surfaces 有权
标题翻译：抛光晶圆表面的化学机械方法
公开(公告)号：US06375545B1
公开(公告)日：2002-04-23
申请号：US09484252
申请日：2000-01-18
申请人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
发明人： Hiroyuki Yano , Gaku Minamihaba , Yukiteru Matsui , Nobuo Hayasaka , Katsuya Okumura , Akira Iio , Masayuki Hattori , Masayuki Motonari
IPC分类号： B24B100
CPC分类号： H01L21/3212 , C09G1/02 , C09K3/1463 , H01L21/31053 , Y10S977/775 , Y10S977/888
摘要： It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.
摘要翻译：本发明的目的是提供一种水分散体和CMP浆料，其可以以足够的速率实现抛光，而不会在晶片工作薄膜的抛光表面中产生划痕，以及用于晶片表面的抛光工艺和制造半导体器件使用它们。本发明的CMP浆料等含有交联结构，平均粒径为0.13〜0.8μm的聚合物粒子。 CMP浆料可以不含表面活性剂，并且可以含有不大于0.15重量％的表面活性剂。另一个本发明的CMP浆料等含有聚合物颗粒和二氧化硅，铝等的无机颗粒。聚合物颗粒的平均粒径可以不大于无机颗粒的平均粒度。无机凝结粒子的平均粒径可以为0.1〜1.0μm，并且可以小于聚合物粒子的平均粒径。将CMP浆料用作抛光剂，并且研磨在晶片上形成的氧化硅膜，铝膜，钨膜或铜膜的工作膜。并且通过使用CMP浆料制造半导体器件。

7. 发明授权

US5914275A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
公开(公告)号：US5914275A
公开(公告)日：1999-06-22
申请号：US897324
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/00
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.

8. 发明授权

US5445996A Method for planarizing a semiconductor device having a amorphous layer 失效
标题翻译：用于平坦化具有非晶层的半导体器件的方法
公开(公告)号：US5445996A
公开(公告)日：1995-08-29
申请号：US66375
申请日：1993-05-25
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768 , H01L21/302 , H01L21/463
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

9. 发明授权

US5445710A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5445710A
公开(公告)日：1995-08-29
申请号：US202372
申请日：1994-02-25
申请人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
发明人： Masaru Hori , Hiroyuki Yano , Keiji Horioka , Hisataka Hayashi , Sadayuki Jimbo , Haruo Okano , Kazuhiro Tomioka , Yasuhiro Ito , Haruki Mori
IPC分类号： H01L21/033 , H01L21/308 , H01L21/311 , H01L21/314 , H01L21/3213 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/00
CPC分类号： H01L21/31122 , H01L21/0332 , H01L21/3081 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/3146 , H01L21/32136 , H01L21/32137 , H01L21/32139
摘要： A dry-etching method comprising the steps of forming carbon film on a substrate to be etched, forming a resist pattern on said carbon thin film, selectively etching said carbon film using said resist pattern as a mask by a plasma of a gas mixture of a gas containing fluorine atoms and a gas containing oxygen atoms which are mixed at an atomic ratio of fluorine to oxygen of 198:1 to 1:2 so as to form a carbon film pattern, and selectively etching said substrate to be etched using said carbon film pattern as a mask or said resist pattern and said carbon film pattern as masks.
摘要翻译：一种干蚀刻方法，包括以下步骤：在要蚀刻的基底上形成碳膜，在所述碳薄膜上形成抗蚀剂图案，使用所述抗蚀剂图案作为掩模，用等离子体选择性地蚀刻所述碳膜，含有氟原子的气体和以氟与氧的原子比混合为198:1〜1:2的含有氧原子的气体，以形成碳膜图案，并使用所述碳膜选择性地蚀刻所述蚀刻用基板图案作为掩模或所述抗蚀剂图案和所述碳膜图案作为掩模。

10. 发明授权

US5948205A Polishing apparatus and method for planarizing layer on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上平坦化层的抛光装置和方法
公开(公告)号：US5948205A
公开(公告)日：1999-09-07
申请号：US897570
申请日：1997-07-21
申请人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
发明人： Masako Kodera , Hiroyuki Yano , Atsushi Shigeta , Riichirou Aoki , Hiromi Yajima , Haruo Okano
IPC分类号： B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/14 , H01L21/3105 , H01L21/66 , H01L21/768
CPC分类号： B24B37/013 , B24B37/04 , B24B49/00 , B24B49/02 , B24B49/04 , B24B49/16 , C09K3/1463 , H01L21/31051 , H01L21/31053 , H01L21/76819 , H01L22/26 , H01L2924/0002
摘要： To planarize an insulating film formed on a semiconductor substrate, a polishing slurry containing cerium oxide is used to polish the surface of the insulating film. Using the cerium oxide included slurry as a polishing agent, the insulating film is not contaminated by alkali metals during the polishing process. Furthermore, the insulating film is polished at an enhanced polishing rate.
摘要翻译：为了平坦化形成在半导体衬底上的绝缘膜，使用含有氧化铈的抛光浆料来抛光绝缘膜的表面。使用包含二氧化铈的浆料作为抛光剂，在抛光过程中绝缘膜不被碱金属污染。此外，以增强的抛光速率对绝缘膜进行抛光。

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