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1. 发明授权

US4636833A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4636833A
公开(公告)日：1987-01-13
申请号：US590870
申请日：1984-03-19
申请人： Yasushiro Nishioka , Noriyuki Homma , Noriyuki Sakuma , Kiichiro Mukai
发明人： Yasushiro Nishioka , Noriyuki Homma , Noriyuki Sakuma , Kiichiro Mukai
IPC分类号： G11C11/411 , H01L21/822 , H01L21/8229 , H01L27/04 , H01L27/07 , H01L27/102 , H01L23/48
CPC分类号： H01L27/0788 , H01L27/1025
摘要： A semiconductor device comprising a first electrode, a dielectric film and a second electrode which are stacked and formed on a semiconductor layer with the second electrode in contact with the semiconductor layer. A diode is formed of the second electrode and the semiconductor layer, and a capacitor is formed of the first electrode, the dielectric film and the second electrode.
摘要翻译：一种半导体器件，包括第一电极，电介质膜和第二电极，所述第一电极，电介质膜和第二电极层叠并形成在半导体层上，其中第二电极与半导体层接触。二极管由第二电极和半导体层形成，电容器由第一电极，电介质膜和第二电极形成。

2. 发明授权

US4891684A Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US4891684A
公开(公告)日：1990-01-02
申请号：US81231
申请日：1987-08-04
申请人： Yasushiro Nishioka , Hiroshi Shinriki , Noriyuki Sakuma , Kiichiro Mukai
发明人： Yasushiro Nishioka , Hiroshi Shinriki , Noriyuki Sakuma , Kiichiro Mukai
IPC分类号： H01L21/314 , H01G4/005 , H01G4/33 , H01L21/822 , H01L27/04 , H01L27/108 , H01L29/94
CPC分类号： H01L29/94 , H01G4/005 , H01G4/33 , H01L27/10805
摘要： A reaction-preventing film is provided between a capacitor insulating film made of a material having a high dielectric constant, such as Ta.sub.2 O.sub.5, and an upper electrode in order to prevent a reaction of the upper electrode with the capacitor insulating film. This effectively prevents the reaction between the upper electrode and the capacitor caused by a heat treatment conducted after formation of the capacitor, and hence prevents an increase in leakage current caused by the reaction. Thus, the reliability of a semiconductor device is remarkably increased.
摘要翻译：为了防止上部电极与电容绝缘膜的反应，在由具有高介电常数的材料制成的电容器绝缘膜（例如Ta 2 O 5）和上部电极之间设置防反射膜。这有效地防止了在形成电容器之后进行的热处理引起的上部电极和电容器之间的反应，从而防止了由反应引起的漏电流的增加。因此，半导体器件的可靠性显着增加。

3. 发明授权

US4809052A Semiconductor memory device 失效
标题翻译：半导体存储器件
公开(公告)号：US4809052A
公开(公告)日：1989-02-28
申请号：US860413
申请日：1986-05-07
申请人： Yasushiro Nishioka , Takeo Shiba , Hiroshi Shinriki , Kiichiro Mukai , Akihisa Uchida , Ichiro Mitamura , Keiichi Higeta , Katsumi Ogiue , Kunihiko Yamaguchi , Noriyuki Sakuma
发明人： Yasushiro Nishioka , Takeo Shiba , Hiroshi Shinriki , Kiichiro Mukai , Akihisa Uchida , Ichiro Mitamura , Keiichi Higeta , Katsumi Ogiue , Kunihiko Yamaguchi , Noriyuki Sakuma
IPC分类号： G11C11/411 , H01L27/102 , H01L27/10 , H01L29/40 , H01L29/48
CPC分类号： G11C11/4116 , H01L27/1025
摘要： A semiconductor memory device is provided such as the type having flip-flop memory cells each including two bipolar transistors in cross connection with each other. In certain embodiments, at least a part of a Schottky barrier diode or capacitor in the memory cell is formed under a digit line. This memory device is greatly reduced in its required area, and the Schottky barrier diode and capacitor are negligibly influenced by the digit line. In other embodiments, it is arranged to provide different electrodes for the Schottky barrier diode and the capacitor to optimize construction in a minimized space.
摘要翻译：提供半导体存储器件，例如具有触发器存储单元的类型，每个触发器存储单元包括彼此交叉连接的两个双极晶体管。在某些实施例中，在数字线下形成存储单元中的肖特基势垒二极管或电容器的至少一部分。该存储器件的所需面积大大降低，肖特基势垒二极管和电容器受数字线影响不大。在其他实施例中，它被设置为为肖特基势垒二极管和电容器提供不同的电极，以在最小化的空间中优化结构。

4. 发明授权

US5079191A Process for producing a semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5079191A
公开(公告)日：1992-01-07
申请号：US517323
申请日：1990-05-01
申请人： Hiroshi Shinriki , Yasushiro Nishioka , Noriyuki Sakuma , Kiichiro Mukai
发明人： Hiroshi Shinriki , Yasushiro Nishioka , Noriyuki Sakuma , Kiichiro Mukai
IPC分类号： H01L27/108 , H01L29/45 , H01L29/51 , H01L29/92 , H01L29/94
CPC分类号： H01L29/516 , H01L27/10808 , H01L28/40 , H01L29/456 , H01L29/94 , Y10S148/014 , Y10S148/116 , Y10S148/163 , Y10S438/981
摘要： A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.
摘要翻译：一种具有大容量电容器的半导体器件，其中绝缘膜形成在由诸如氧化钽之类的具有高介电常数的材料制成的膜下面，绝缘膜的一部分位于缺陷区不希望地薄的厚度比绝缘膜的其它部分厚，从而防止由于缺陷区域的存在而引起的介电强度和电容器寿命的劣化的发生。还公开了用于制造这种半导体器件的方法。因此，可以有效地防止当采用具有高介电常数的材料（例如氧化钽）作为电容器的电介质膜时会引起的问题的发生，使得具有大的半导体的可靠性电容电容大大提高。

5. 发明授权

US4937650A Semiconductor capacitor device with dual dielectric 失效
标题翻译：具有双电介质的半导体电容器件
公开(公告)号：US4937650A
公开(公告)日：1990-06-26
申请号：US247343
申请日：1988-09-21
申请人： Hiroshi Shinriki , Yasushiro Nishioka , Noriyuki Sakuma , Kiichiro Mukai
发明人： Hiroshi Shinriki , Yasushiro Nishioka , Noriyuki Sakuma , Kiichiro Mukai
IPC分类号： H01L27/10 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L29/45 , H01L29/51 , H01L29/92 , H01L29/94
CPC分类号： H01L29/456 , H01L27/10808 , H01L28/40 , H01L29/516 , H01L29/94 , Y10S257/915
摘要： A semiconductor device having a large-capacitance capacitor in which an insulator film is formed underneath a film made of a material having a high dielectric constant, such as tantalum oxide, in such a manner that a portion of the insulator film underneath a defect region which is undesirably thin is thicker than other portions of the insulator film, thereby preventing occurrence of a failure in terms of dielectric strength and deterioration of the lifetime of the capacitor which would otherwise be caused by the existence of the defect region. Also disclosed is a process for producing such semiconductor device. Thus, it is possible to effectively prevent occurrence of problems which would otherwise be caused when a material having a high dielectric constant, such as tantalum oxide, is employed as a dielectric film of a capacitor, so that the reliability of a semiconductor having a large-capacitance capacitor is greatly improved.
摘要翻译：一种具有大容量电容器的半导体器件，其中绝缘膜形成在由诸如氧化钽之类的具有高介电常数的材料制成的膜下面，绝缘膜的一部分位于缺陷区不希望地薄的厚度比绝缘膜的其它部分厚，从而防止由于缺陷区域的存在而引起的介电强度和电容器寿命的劣化的发生。还公开了用于制造这种半导体器件的方法。因此，可以有效地防止当采用具有高介电常数的材料（例如氧化钽）作为电容器的电介质膜时会引起的问题的发生，使得具有大的半导体的可靠性电容电容大大提高。

6. 发明授权

US07886594B2 Thermal type fluid flow sensor with metal film resistor 有权
标题翻译：带有金属膜电阻的热式流体流量传感器
公开(公告)号：US07886594B2
公开(公告)日：2011-02-15
申请号：US12699170
申请日：2010-02-03
申请人： Noriyuki Sakuma
发明人： Noriyuki Sakuma
IPC分类号： G01F1/68
CPC分类号： G01F1/6845 , G01F1/692 , Y10T29/49085
摘要： A thermal-type fluid flow sensor is provided to measure an air flow rate flowing through an air intake passage. The thermal-type fluid flow sensor includes a heating resistive element; a first temperature-measuring resistive element for detecting a temperature of the heating resistive element; a second temperature-measuring resistive element for detecting the temperature of air on an upstream side of air heated by the heating resistive element; a third temperature-measuring resistive element for detecting the temperature of air on a downstream side of air heated by the heating resistive element, and a fourth temperature-measuring resistive element for detecting the temperature of air, wherein the heating resistive element and the first, second, third and fourth temperature-measuring resistive elements are formed on a substrate, the heating resistive element is disposed in an upper layer or a lower layer of the first temperature-measuring resistive element, and a resistance ratio of materials of the heating resistive element is larger than a resistance ratio of materials of the first temperature-measuring resistive element.
摘要翻译：提供热型流体流量传感器来测量流过进气通道的空气流量。热式流体流量传感器包括加热电阻元件; 第一温度测量电阻元件，用于检测加热电阻元件的温度; 第二温度测量电阻元件，用于检测由加热电阻元件加热的空气的上游侧的空气的温度; 第三温度测量电阻元件，用于检测由加热电阻元件加热的空气的下游侧的空气的温度;以及第四温度测量电阻元件，用于检测空气的温度，其中加热电阻元件和第一，第二，第三和第四温度测量电阻元件形成在基板上，加热电阻元件设置在第一温度测量电阻元件的上层或下层中，加热电阻元件的材料的电阻比大于第一温度测量电阻元件的材料的电阻比。

7. 发明申请

US20080168650A1 Thermal Type Fluid Flow Sensor and Manufacturing Method Thereof 有权
标题翻译：热式流体流量传感器及其制造方法
公开(公告)号：US20080168650A1
公开(公告)日：2008-07-17
申请号：US11964105
申请日：2007-12-26
申请人： Noriyuki Sakuma
发明人： Noriyuki Sakuma
IPC分类号： H01C7/02 , G01F1/68 , C23F1/00
CPC分类号： G01F1/6845 , G01F1/692 , Y10T29/49085
摘要： A thermal-type fluid flow sensor technology for measuring more precisely the temperature of the heater for an improved sensibility of detecting flow measurements. The thermal-type fluid flow sensor for measuring the air flow rate includes a heating resistive element formed on the semiconductor substrate through a first insulating layer, temperature-measuring resistive elements for heating resistive element for measuring the temperature of the heating resistive element, upstream and downstream temperature-measuring resistive elements for detecting the temperature of air on the upstream side and the downstream side of the air heated by the heating resistive element, and an air temperature measuring resistive element for measuring the temperature of the air heated by the heating resistive element, and at least the temperature-measuring resistive element for the heating resistive element is disposed in the upper layer or lower layer of the heating resistive element.
摘要翻译：一种热式流体流量传感器技术，用于更精确地测量加热器的温度，以提高检测流量测量的灵敏度。用于测量空气流量的热式流体流量传感器包括通过第一绝缘层形成在半导体衬底上的加热电阻元件，用于加热电阻元件的温度测量电阻元件，用于测量上游的加热电阻元件的温度，用于检测由加热电阻元件加热的空气的上游侧和下游侧的空气的温度的下游温度测量电阻元件，以及用于测量由加热电阻元件加热的空气的温度的空气温度测量电阻元件并且至少用于加热电阻元件的温度测量电阻元件设置在加热电阻元件的上层或下层中。

8. 发明授权

US07183212B2 Polishing method, metallization fabrication method, method for manufacturing semiconductor device and semiconductor device 有权
标题翻译：抛光方法，金属化制造方法，制造半导体器件和半导体器件的方法
公开(公告)号：US07183212B2
公开(公告)日：2007-02-27
申请号：US10898252
申请日：2004-07-26
申请人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Masaaki Fujimori , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L21/302
CPC分类号： C23F1/18 , C09G1/04 , C23F3/06 , H01L21/3212 , H01L21/7684
摘要： Described is a polishing technique adapted for multilevel metallization of an electronic circuit device, which comprises polishing a metal film with a polishing liquid containing an oxidizing substance, a phosphoric acid and a protection-layer forming agent. The present invention makes it possible to polishing a metal film at a high removal rate while suppressing occurrence of scratches, delamination, dishing or erosion.
摘要翻译：描述了适用于电子电路器件的多层金属化的抛光技术，其包括用包含氧化物质，磷酸和保护层形成剂的抛光液抛光金属膜。本发明能够在抑制划痕，分层，凹陷或侵蚀的发生的同时以高的去除率对金属膜进行研磨。

9. 发明授权

US06750128B2 Methods of polishing, interconnect-fabrication, and producing semiconductor devices 失效
标题翻译：抛光，互连制造和制造半导体器件的方法
公开(公告)号：US06750128B2
公开(公告)日：2004-06-15
申请号：US10396410
申请日：2003-03-26
申请人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
发明人： Seiichi Kondo , Noriyuki Sakuma , Yoshio Homma
IPC分类号： H01L213205
CPC分类号： H01L21/3212 , B24B37/044 , C09G1/02 , H01L21/7684
摘要： The present invention provides a technique to reduce and suppress scratches and delamination, to suppress and control the development of dishing and erosion, and to polish at high polishing rate. Polishing is performed using a polishing solution, which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
摘要翻译：本发明提供减少和抑制划痕和分层，抑制和控制凹陷和侵蚀的发展并以高抛光速率抛光的技术。使用包含氧化剂，磷酸，有机酸，形成抑制层的化学品和水的抛光溶液进行抛光。

10. 发明授权

US06596638B1 Polishing method 有权
标题翻译：抛光方法
公开(公告)号：US06596638B1
公开(公告)日：2003-07-22
申请号：US09618999
申请日：2000-07-18
申请人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
发明人： Seiichi Kondo , Yoshio Homma , Noriyuki Sakuma , Kenichi Takeda , Kenji Hinode
IPC分类号： H01L21302
CPC分类号： C23F3/06 , B24B37/04 , C09G1/02 , C09K3/1463 , H01L21/02074 , H01L21/3212 , H01L21/7684
摘要： A polishing technique wherein scratches, peeling, dishing and erosion are suppressed, a complex cleaning process and slurry supply/processing equipment are not required, and the cost of consumable items, such as slurries and polishing pads, is reduced. A metal film formed on an insulating film having a groove is polished with a polishing solution containing an oxidizer and a substance which renders oxides water-soluble, but not containing a polishing abrasive.
摘要翻译：抑制了划痕，剥离，凹陷和侵蚀的抛光技术，不需要复杂的清洁处理和浆料供应/处理设备，并且消耗品如浆料和抛光垫的成本降低。在具有凹槽的绝缘膜上形成的金属膜用含有氧化剂和使氧化物水溶性但不含抛光磨料的物质的抛光溶液抛光。

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