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1. 发明授权

US09397242B2 Silicon substrate having textured surface, and process for producing same 有权
标题翻译：具有纹理表面的硅衬底及其制造方法
公开(公告)号：US09397242B2
公开(公告)日：2016-07-19
申请号：US14006357
申请日：2012-03-28
申请人： Yasushi Taniguchi , Shigeru Sankawa, Sr. , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
发明人： Yasushi Taniguchi , Shigeru Sankawa, Sr. , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
IPC分类号： H01L31/0236 , H01L21/306 , H01L29/04
CPC分类号： H01L31/02363 , H01L21/30604 , H01L29/045 , Y02E10/50
摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
摘要翻译：本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

2. 发明申请

US20140020750A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, AND PROCESS FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底及其生产方法
公开(公告)号：US20140020750A1
公开(公告)日：2014-01-23
申请号：US14006357
申请日：2012-03-28
申请人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
发明人： Yasushi Taniguchi , Shigeru Sankawa , Kouji Arai , Hiroshi Tanabe , Ichiro Nakayama , Naoshi Yamaguchi
IPC分类号： H01L31/0236 , H01L21/306 , H01L29/04
CPC分类号： H01L31/02363 , H01L21/30604 , H01L29/045 , Y02E10/50
摘要： The present invention addresses the problem of providing a novel silicon substrate having a textured surface by dry-etching the surface of a silicon substrate having (111) orientation and thereby forming a texture thereon. The present invention provides a silicon substrate having (111) orientation, said silicon substrate having a textured surface that includes multiple protrusions which each comprise three slant faces and have heights of 100 to 8000 nm. This process for producing a silicon substrate includes: a step of preparing a silicon substrate having (111) orientation; and a step of blowing an etching gas onto the surface of the silicon substrate, said etching gas containing one or more gases selected from the group consisting of ClF3, XeF2, BrF3, BrF5 and NF3.
摘要翻译：本发明解决了通过干法蚀刻具有（111）取向的硅衬底的表面从而在其上形成纹理来提供具有纹理表面的新型硅衬底的问题。本发明提供具有（111）取向的硅衬底，所述硅衬底具有纹理化表面，其包括多个突起，每个突出部包括三个倾斜面并且具有100至8000nm的高度。该制造硅衬底的工艺包括：制备具有（111）取向的硅衬底的步骤; 以及将蚀刻气体吹送到硅衬底的表面上的步骤，所述蚀刻气体含有选自ClF 3，XeF 2，BrF 3，BrF 5和NF 3中的一种或多种气体。

3. 发明授权

US08772067B2 Silicon substrate having textured surface, solar cell having same, and method for producing same 有权
标题翻译：具有纹理表面的硅衬底，具有其的太阳能电池及其制造方法
公开(公告)号：US08772067B2
公开(公告)日：2014-07-08
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L21/00 , H01L31/0224 , H01L31/18 , H01L31/0236 , H01L31/068
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

4. 发明申请

US20130183791A1 SILICON SUBSTRATE HAVING TEXTURED SURFACE, SOLAR CELL HAVING SAME, AND METHOD FOR PRODUCING SAME 有权
标题翻译：具有纹理表面的硅衬底，具有该表面的太阳能电池及其制造方法
公开(公告)号：US20130183791A1
公开(公告)日：2013-07-18
申请号：US13823470
申请日：2012-04-13
申请人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
发明人： Ichiro Nakayama , Tsuyoshi Nomura , Tomohiro Okumura , Mitsuo Saitoh , Hiroshi Tanabe , Yukiya Usui
IPC分类号： H01L31/18
CPC分类号： H01L31/1804 , H01L31/02245 , H01L31/022458 , H01L31/02363 , H01L31/068 , H01L31/1892 , Y02E10/547 , Y02P70/521
摘要： The purpose of the present invention is to obtain a finer texture for a silicon substrate having a textured surface and thereby obtain a thinner silicon substrate for a solar cell. The invention provides a silicon substrate that has a thickness of 50 [mu]m or less and substrate surface orientation (111), and that has a textured surface on which a texture has been formed. Such a silicon substrate is produced by a process comprising a step (A) for preparing a silicon substrate that preferably has a thickness of 50 [mu]m or less and substrate surface orientation (111), and a step (B) for texturing by blowing etching as comprising a fluorine-containing gas onto the surface of the prepared silicon substrate.
摘要翻译：本发明的目的是获得具有纹理表面的硅衬底的更细的纹理，从而获得更薄的太阳能电池用硅衬底。本发明提供了一种硅衬底，其具有50μm或更小的厚度和衬底表面取向（111），并且其具有纹理表面已形成纹理表面。这样的硅衬底通过包括用于制备优选厚度为50μm或更小的衬底表面取向（111）的硅衬底的步骤（A）和用于通过在制备的硅衬底的表面上进行包含含氟气体的蚀刻。

5. 发明授权

US08628863B2 Indenopyrene compound and organic light-emitting device using the compound 有权
标题翻译：茚并芘化合物和使用该化合物的有机发光装置
公开(公告)号：US08628863B2
公开(公告)日：2014-01-14
申请号：US13127637
申请日：2009-11-06
申请人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
发明人： Takeshi Sekiguchi , Hiroshi Tanabe , Hiroki Ohrui , Masanori Seki
IPC分类号： H01L51/54 , C07C25/22 , C07C13/62 , C07C211/61 , C07D213/16 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04
CPC分类号： C07C25/22 , C07C13/62 , C07C211/61 , C07C2603/18 , C07C2603/24 , C07C2603/26 , C07C2603/40 , C07C2603/48 , C07C2603/50 , C07C2603/52 , C07C2603/54 , C07D213/06 , C07D215/06 , C07D221/18 , C07D239/26 , C07D401/04 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1044 , H01L51/0054 , H01L51/0058 , H01L51/0059 , H01L51/5012 , H01L51/5048 , H01L51/5092 , H05B33/10
摘要： Provided is an organic light-emitting device having an optical output with high luminance and high color purity with extremely high efficiency. The organic light-emitting device includes an organic layer between the anode and the cathode, in which one of the anode and the cathode is a transparent electrode or a semi-transparent electrode and at least one layer of the organic layer contains at least one kind of indenopyrene compound having a specific structure.
摘要翻译：本发明提供一种具有高亮度，高纯度，高效率的光输出的有机发光装置。有机发光器件包括在阳极和阴极之间的有机层，其中阳极和阴极中的一个是透明电极或半透明电极，并且至少一层有机层包含至少一种具有特定结构的茚并芘化合物。

6. 发明申请

US20120186263A1 POWER GENERATION PLANT 有权
标题翻译：发电厂
公开(公告)号：US20120186263A1
公开(公告)日：2012-07-26
申请号：US13354698
申请日：2012-01-20
申请人： Hiroshi Tanabe
发明人： Hiroshi Tanabe
IPC分类号： F02C7/22
CPC分类号： F02C3/22 , F02C3/20 , F02C3/30 , F02C7/14 , F02C7/22
摘要： A power-generation plant 10 including a gas turbine 11; a fuel-gas cooler 13; and an extraction line 24 that guides the fuel gas extracted from an intermediate stage of a fuel-gas compressor 12 to the fuel-gas cooler 13; a first level detector 61 that detects whether a level of the coolant accumulated at a bottom portion of the fuel-gas cooler 13 has reached a predetermined level; and a controller that stops the gas turbine 11 on the basis of a detection signal sent from the first level detector 61 and that outputs a command signal for stopping a coolant pump 53 that supplies the coolant to the spray nozzles 44 and 45.
摘要翻译：包括燃气轮机11的发电厂10; 燃料气体冷却器13; 以及将从燃料气体压缩机12的中间阶段抽出的燃料气体引导到燃料气体冷却器13的抽出管线24; 第一电平检测器61，其检测在燃料气体冷却器13的底部积聚的冷却水位是否达到预定水平; 以及控制器，其基于从第一电平检测器61发送的检测信号停止燃气轮机11，并且输出用于停止向喷嘴44和45供应冷却剂的冷却剂泵53的命令信号。

7. 发明授权

US08151572B2 Method of starting and stopping gas turbine and start-and-stop control device 有权
标题翻译：启动和停止燃气轮机和启停控制装置的方法
公开(公告)号：US08151572B2
公开(公告)日：2012-04-10
申请号：US12442338
申请日：2007-09-19
申请人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
发明人： Satoshi Tanaka , Hiroshi Tanabe , Yasuhiro Hashimoto
IPC分类号： F02C7/22 , F02C7/26
CPC分类号： F02C9/40 , F01D19/00 , F01D21/00 , F02C7/232 , F02C7/26
摘要： An object of the present invention is to provide a method of starting and stopping a gas turbine and a start-and-stop control device, which are capable of solving a problem of a failure in normally igniting a fuel gas due to a purge gas (nitrogen gas) remaining in a fuel gas pipe and thereby igniting the fuel gas stably. For this purpose, the start-and-stop control device performs control at the time of starting the gas turbine by sequentially performing: first exhaust gas duct purge for pushing out a fuel gas remaining in an exhaust gas duct with compressed air from a compressor; fuel gas pipe purge for pushing out nitrogen gas remaining in a fuel gas pipe between a fuel gas shutoff valve and a combustor at the time of stopping the gas turbine by the fuel gas by opening a fuel gas shutoff valve; and second exhaust gas duct purge for pushing out the fuel gas remaining in the exhaust gas duct at the time of the fuel gas pipe purge by the compressed air from the compressor, and then the fuel gas is supplied to the combustor by opening the fuel gas shutoff valve again and ignited.
摘要翻译：本发明的目的是提供一种启动和停止燃气轮机和起动和停止控制装置的方法，其能够解决由于吹扫气体而导致的燃料气体的正常点燃故障的问题（氮气）残留在燃料气体管中，从而稳定地点燃燃料气体。为此，启动和停止控制装置在启动燃气轮机时，通过依次执行以下步骤来执行控制：第一废气管道吹扫，用于从压缩机推出压缩空气中的残留在废气管道中的燃料气体; 用于通过打开燃料气体截止阀，在燃料气体停止燃气轮机时，在燃料气体切断阀和燃烧器之间排出残留在燃料气体管道中的氮气的燃料气体管道吹扫; 以及第二废气管道吹扫，用于在通过来自压缩机的压缩空气吹扫燃料气体管道时推出残留在排气管道中的燃料气体，然后通过打开燃料气体将燃料气体供应到燃烧器关闭阀再次点火。

8. 发明授权

US08094389B2 Solid immersion lens holder 有权
标题翻译：固体浸没镜头支架
公开(公告)号：US08094389B2
公开(公告)日：2012-01-10
申请号：US12664105
申请日：2008-06-13
申请人： Hirotoshi Terada , Hiroshi Tanabe
发明人： Hirotoshi Terada , Hiroshi Tanabe
IPC分类号： G02B7/02
CPC分类号： G02B21/33 , G01N21/9501 , G02B7/022 , G02B21/0016 , G02B21/02 , G02B21/248
摘要： A solid immersion lens holder 200 includes a holder main body 8 having a lens holding unit 60 that holds a solid immersion lens 6, and an objective lens socket 9 for attaching the holder main body 8 to a front end of an objective lens 21. The solid immersion lens 6 is held in a state of being unfixed to be free with respect to the lens holding unit 60. A vibration generator unit 120 that causes the holder main body 8 to vibrate is attached to the objective lens socket 9. The vibration generator unit 120 has a vibrating motor 140 held by a motor holding member 130, and a weight 142 structured to be eccentric by weight is attached to an output shaft 141 of the vibrating motor 140. A vibration generated in the vibration generator unit 120 is transmitted to the solid immersion lens 6 via the objective lens socket 9 and the holder main body 8. Thereby, achieving the solid immersion lens holder capable of improving the close contact between the solid immersion lens and an observation object.
摘要翻译：固体浸没透镜保持器200包括具有保持固体浸没透镜6的透镜保持单元60的保持器主体8和用于将保持器主体8附接到物镜21的前端的物镜插座9。固体浸没透镜6被保持为相对于透镜保持单元60不固定的状态。使保持器主体8振动的振动发生器单元120附接到物镜插座9.振动发生器单元120具有由电动机保持构件130保持的振动电动机140，并且被构造为重量偏心的重物142附接到振动电动机140的输出轴141.在振动发生器单元120中产生的振动被传递到固体浸没透镜6经由物镜插座9和保持器本体8.由此，实现能够改善固体浸没透镜和观察对象之间的紧密接触的固体浸没透镜保持器。

9. 发明授权

US07833634B2 1,8-naphthyridine compound and organic light-emitting device using the same 有权
标题翻译： 1,8-萘啶化合物和使用其的有机发光装置
公开(公告)号：US07833634B2
公开(公告)日：2010-11-16
申请号：US11455849
申请日：2006-06-20
申请人： Koichi Suzuki , Hiroshi Tanabe , Chika Negishi , Taiki Watanabe , Akihiro Senoo , Kazunori Ueno
发明人： Koichi Suzuki , Hiroshi Tanabe , Chika Negishi , Taiki Watanabe , Akihiro Senoo , Kazunori Ueno
IPC分类号： H01L51/54 , H05B33/12 , C07D471/02
CPC分类号： H01L51/0072 , C07D471/04 , C09K11/06 , C09K2211/1007 , C09K2211/1011 , C09K2211/1014 , C09K2211/1029 , C09K2211/1033 , C09K2211/1044 , C09K2211/1048 , C09K2211/1059 , C09K2211/1088 , C09K2211/185 , C09K2211/186 , C09K2211/188 , H01L51/0054 , H01L51/0058 , H01L51/5012 , H01L51/5048 , H05B33/14 , Y10S428/917
摘要： Provided a novel 1,8-naphthyridine compound represented by the following general formula [I]: wherein R1 to R6 each represent a hydrogen atom; an alkyl group, a halogen atom; a trifluoromethyl group; and a cyano group, and may be the same as or different from one another, and that at least two of R1 to R6 each represent an aralkyl group, an aryl group, a heterocyclic group, a condensed polycyclic aromatic group, a condensed polycyclic heterocyclic group and an aryloxy group which may be substituted; and a substituted amino group. The 1,8-naphthyridine is employed in an organic compound layer provided between a pair of electrodes in an organic light-emitting device.
摘要翻译：提供由以下通式[I]表示的新颖的1,8-萘啶化合物：其中R 1至R 6各自表示氢原子; 烷基，卤素原子; 三氟甲基; 和氰基，可以相同或不同，R 1〜R 6中的至少两个表示芳烷基，芳基，杂环基，缩合多环芳基，缩合多环杂环基团和可被取代的芳氧基; 和取代的氨基。 1,8-萘啶用于有机发光装置中的一对电极之间的有机化合物层。

10. 发明授权

US07633571B2 Thin-film transistor with semiconductor layer and off-leak current characteristics 失效
标题翻译：具有半导体层和漏电流特性的薄膜晶体管
公开(公告)号：US07633571B2
公开(公告)日：2009-12-15
申请号：US11029405
申请日：2005-01-06
申请人： Takahiro Korenari , Hiroshi Tanabe , Nobuya Seko
发明人： Takahiro Korenari , Hiroshi Tanabe , Nobuya Seko
IPC分类号： G02F1/136
CPC分类号： G02F1/1368 , H01L27/12 , H01L29/78609 , H01L29/78621 , H01L29/78645
摘要： Recognizing the phenomenon that the film thickness of a semiconductor layer causes shift in the OFF-leak current characteristic that corresponds to back-gate voltage of a thin-film transistor, the average film thickness of a semiconductor layer is prescribed such that the shift of the OFF-leak current characteristic is reduced. Alternatively, the film thickness distribution (the ratio of the occurrence of each region having different film thickness) in the direction of the channel width of the semiconductor layer is prescribed.
摘要翻译：认识到半导体层的膜厚导致与薄膜晶体管的背栅极电压相对应的OFF漏电流特性偏移的现象，规定半导体层的平均膜厚，使得泄漏电流特性降低。或者，规定半导体层的沟道宽度方向的膜厚分布（膜厚不同的区域的出现比例）。

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