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1. 发明申请

US20060039721A1 Conductive roller and imaging apparatus 审中-公开
标题翻译：导电辊和成像装置
公开(公告)号：US20060039721A1
公开(公告)日：2006-02-23
申请号：US10510755
申请日：2003-04-11
申请人： Yasuro Shiomura , Yuichiro Mori , Koji Yamakawa
发明人： Yasuro Shiomura , Yuichiro Mori , Koji Yamakawa
IPC分类号： G03G15/08
CPC分类号： G03G15/0808
摘要： In a conductive roller having a rotation shaft and a conductive elastic layer arranged around the rotation shaft, a resin coating layer including a particle having JIS A hardness of 10-99 and an average particle size of 2-30 μm. An image forming apparatus utilizes the conductive roller mentioned above. Herewith, the image forming apparatus, which has excellent toner carrying property and toner charge property, provides a high quality image with no image unevenness and no image overlapping, and has an excellent durability, and the image forming apparatus installing the above conductive roller are provided.
摘要翻译：在具有旋转轴和布置在旋转轴周围的导电弹性层的导电辊中，具有JIS A硬度为10-99，平均粒径为2-30μm的颗粒的树脂涂层。图像形成装置利用上述导电性辊。因此，具有优异的调色剂携带性和调色剂带电性的图像形成装置提供了无图像不均匀，无图像重叠的高质量图像，并且具有优异的耐久性，并且设置安装上述导电辊的图像形成装置。

2. 发明授权

US08410529B2 Magnetic random access memory and method of fabricating the same 有权
标题翻译：磁性随机存取存储器及其制造方法
公开(公告)号：US08410529B2
公开(公告)日：2013-04-02
申请号：US13234608
申请日：2011-09-16
申请人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
发明人： Daisuke Ikeno , Koji Yamakawa , Katsuaki Natori , Yasuyuki Sonoda
IPC分类号： H01L29/66
CPC分类号： H01L27/228 , B82Y40/00 , H01F10/3254 , H01F10/3286 , H01F10/3295 , H01F41/307 , H01L43/08 , H01L43/10 , H01L43/12
摘要： According to one embodiment, a semiconductor device, includes a magneto resistive element including a first magnetic layer, a first interface magnetic layer, a nonmagnetic layer, a second interface magnetic layer and a second magnetic layer as a stacked structure in order; and a metal layer including first metal atoms, second metal atoms and boron atoms, the metal layer being provided at least one region selected from under the first magnetic, between the first magnetic layer and the first interface magnetic layer, between the second interface magnetic layer and the second magnetic layer, and upper the second magnetic layer.
摘要翻译：根据一个实施例，半导体器件依次包括第一磁性层，第一界面磁性层，非磁性层，第二界面磁性层和第二磁性层作为堆叠结构的磁阻元件; 以及金属层，其包括第一金属原子，第二金属原子和硼原子，所述金属层设置在所述第一磁性层和所述第一界面磁性层之间的所述第一磁性体的下方的至少一个区域之间，所述第二界面磁性层和第二磁性层，并且在第二磁性层上方。

3. 发明授权

US07527984B2 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US07527984B2
公开(公告)日：2009-05-05
申请号：US11482909
申请日：2006-07-10
申请人： Koji Yamakawa , Soichi Yamazaki
发明人： Koji Yamakawa , Soichi Yamazaki
IPC分类号： H01L21/00
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.
摘要翻译：根据本发明实施例的半导体器件包括半导体衬底; 布置在所述半导体衬底上方的铁电电容器; 覆盖所述强电介质电容器的侧面的绝缘保护膜; 以及侧壁膜，其通过保护膜形成在铁电电容器的侧面上，并且在施加到铁电电容器的电场的方向上对强电介质电容器施加拉伸应力。

4. 发明申请

US20070126338A1 DISPLAY DEVICE 审中-公开
标题翻译：显示设备
公开(公告)号：US20070126338A1
公开(公告)日：2007-06-07
申请号：US11671302
申请日：2007-02-05
申请人： Kaoru KOIWA , Koji Yamakawa
发明人： Kaoru KOIWA , Koji Yamakawa
IPC分类号： H01J63/04 , H01J1/00
CPC分类号： H01J31/127 , H01J1/316 , H01J2201/306
摘要： A PED is constituted by arranging signal lines and scanning lines, in the form of a matrix, on the inner surface of a rear substrate and by forming PZT films, which are used as electron-emitting members, at the intersections of the signal lines and the scanning lines. When a voltage is applied between element electrodes connected to the lines, each PZT film emits an electron beam having a cross-section shape that depends on the shape of the PZT film.
摘要翻译： PED是通过将矩阵形式的信号线和扫描线布置在后基板的内表面上，并且在信号线与信号线的交点处形成用作电子发射部件的PZT膜构成的，扫描线。当在连接到线路的元件电极之间施加电压时，每个PZT膜发射具有取决于PZT膜的形状的横截面形状的电子束。

5. 发明申请

US20070080383A1 Semiconductor device 失效
标题翻译：半导体器件
公开(公告)号：US20070080383A1
公开(公告)日：2007-04-12
申请号：US11482909
申请日：2006-07-10
申请人： Koji Yamakawa , Soichi Yamazaki
发明人： Koji Yamakawa , Soichi Yamazaki
IPC分类号： H01L29/94
CPC分类号： H01L28/65 , H01L27/11502 , H01L27/11507 , H01L28/57
摘要： A semiconductor device according to an embodiment of the present invention includes a semiconductor substrate; a ferroelectric capacitor arranged above the semiconductor substrate; an insulating protecting film covering a side surface of the ferroelectric capacitor; and a side wall film formed on a side surface of the ferroelectric capacitor through the protecting film and giving tensile stress to the ferroelectric capacitor in a direction of an electric field applied to the ferroelectric capacitor.
摘要翻译：根据本发明实施例的半导体器件包括半导体衬底; 布置在所述半导体衬底上方的铁电电容器; 覆盖所述强电介质电容器的侧面的绝缘保护膜; 以及侧壁膜，其通过保护膜形成在铁电电容器的侧面上，并且在施加到铁电电容器的电场的方向上对强电介质电容器施加拉伸应力。

6. 发明授权

US07151288B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体器件及其制造方法
公开(公告)号：US07151288B2
公开(公告)日：2006-12-19
申请号：US10678061
申请日：2003-10-06
申请人： Keitaro Imai , Koji Yamakawa
发明人： Keitaro Imai , Koji Yamakawa
IPC分类号： H01L29/51
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： A semiconductor device comprises a semiconductor substrate, a conductive plug electrically connected to the semiconductor substrate, a silicon carbide film provided on the conductive plug, a metal compound film provided on the silicon carbide film and containing a metal carbide, and an electrode provided on the metal compound film.
摘要翻译：半导体器件包括半导体衬底，与半导体衬底电连接的导电插塞，设置在导电插塞上的碳化硅膜，设置在碳化硅膜上并含有金属碳化物的金属化合物膜，以及设置在该半导体衬底上的电极金属化合物膜。

7. 发明授权

US06995417B2 Semiconductor device having ferroelectric capacitors 失效
标题翻译：具有铁电电容器的半导体装置
公开(公告)号：US06995417B2
公开(公告)日：2006-02-07
申请号：US10924854
申请日：2004-08-25
申请人： Soichi Yamazaki , Koji Yamakawa
发明人： Soichi Yamazaki , Koji Yamakawa
IPC分类号： H01L27/108
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.
摘要翻译：公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上的绝缘区域，设置在绝缘区域上方的第一电容器，设置在绝缘区域上方并与第一电容器相邻的第二电容器，导电阻氧膜，防止氢扩散到第一和第二电容器中，并且将第一电容器的底部电极与第二电容器的底部电极连接，导电阻氧膜具有介于绝缘区域和第一电容器之间的第一部分，绝缘区域和第二电容器。

8. 发明授权

US06982444B2 Ferroelectric memory device having a hydrogen barrier film 失效
标题翻译：具有氢阻挡膜的铁电存储器件
公开(公告)号：US06982444B2
公开(公告)日：2006-01-03
申请号：US10443107
申请日：2003-05-22
申请人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
发明人： Hiroyuki Kanaya , Iwao Kunishima , Koji Yamakawa , Tsuyoshi Iwamoto , Hiroshi Mochizuki , Yoshinori Kumura
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/56 , H01L28/57 , H01L28/65
摘要： There is provided a semiconductor device having a ferroelectric capacitor formed on a semiconductor substrate covered with an insulator film, wherein the ferroelectric capacitor comprises: a bottom electrode formed on the insulator film; a ferroelectric film formed on the bottom electrode; and a top electrode formed on the ferroelectric film. The ferroelectric film has a stacked structure of either of two-layer-ferroelectric film or three-layer-ferroelectric film. The upper ferroelectric film is metallized and prevents hydrogen from diffusing in lower ferroelectric layer. Crystal grains of the stacked ferroelectric films are preferably different.
摘要翻译：提供一种半导体器件，其具有形成在被绝缘体膜覆盖的半导体衬底上的铁电电容器，其中所述强电介质电容器包括：形成在所述绝缘膜上的底部电极; 形成在底部电极上的铁电体膜; 以及形成在强电介质膜上的顶部电极。铁电体膜具有两层铁电体膜或三层铁电体膜的层叠结构。上部铁电膜被金属化，并防止氢在下部铁电层中扩散。堆叠的铁电体膜的晶粒优选不同。

9. 发明申请

US20050258497A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20050258497A1
公开(公告)日：2005-11-24
申请号：US10924854
申请日：2004-08-25
申请人： Soichi Yamazaki , Koji Yamakawa
发明人： Soichi Yamazaki , Koji Yamakawa
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L27/115 , H01L29/94
CPC分类号： H01L27/11507 , H01L27/11502 , H01L28/57 , H01L28/65
摘要： Disclosed is a semiconductor device comprising a semiconductor substrate, an insulating region provided on the semiconductor substrate, a first capacitor provided above the insulating region, a second capacitor provided above the insulating region and adjacent to the first capacitor, a conductive hydrogen-barrier film which prevents diffusion of hydrogen into the first and second capacitors and connects a bottom electrode of the first capacitor with a bottom electrode of the second capacitor, the conductive hydrogen-barrier film having a first portion interposing between the insulating region and the first capacitor and between the insulating region and the second capacitor.
摘要翻译：公开了一种半导体器件，包括半导体衬底，设置在半导体衬底上的绝缘区域，设置在绝缘区域上方的第一电容器，设置在绝缘区域上方并与第一电容器相邻的第二电容器，导电阻氧膜，防止氢扩散到第一和第二电容器中，并且将第一电容器的底部电极与第二电容器的底部电极连接，导电阻氧膜具有介于绝缘区域和第一电容器之间的第一部分，绝缘区域和第二电容器。

10. 发明申请

US20050230728A1 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US20050230728A1
公开(公告)日：2005-10-20
申请号：US11107890
申请日：2005-04-18
申请人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
发明人： Katsuaki Natori , Soichi Yamazaki , Koji Yamakawa , Hiroyuki Kanaya
IPC分类号： H01L27/105 , H01L21/02 , H01L21/8246 , H01L23/522 , H01L27/115 , H01L31/113
CPC分类号： H01L27/11502 , H01L23/5223 , H01L27/11507 , H01L28/57 , H01L28/65 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device according to an aspect of the present invention comprises a semiconductor substrate, a ferroelectric capacitor, a protective film and an auxiliary capacitor. The ferroelectric capacitor is provided above the semiconductor substrate and comprises an upper electrode, a lower electrode and a ferroelectric film interposed between the upper and lower electrodes. The protective film is formed, covering the ferroelectric capacitor. The auxiliary capacitor is provided in a circuit section peripheral to the ferroelectric capacitor and uses the protective film as capacitor insulating film.
摘要翻译：根据本发明的一个方面的半导体器件包括半导体衬底，铁电电容器，保护膜和辅助电容器。铁电电容器设置在半导体衬底上方，并且包括插入在上电极和下电极之间的上电极，下电极和铁电体膜。形成保护膜，覆盖铁电电容器。辅助电容器设置在铁电电容器外围的电路部分中，并且使用保护膜作为电容器绝缘膜。

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