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1. 发明授权

US06550380B2 Method for stencil plate making of stencil sheet for stencil printing 失效
标题翻译：蜡纸印版蜡纸的制版方法
公开(公告)号：US06550380B2
公开(公告)日：2003-04-22
申请号：US09968664
申请日：2001-10-02
申请人： Hideyuki Kinoshita , Yasuo Yamamoto
发明人： Hideyuki Kinoshita , Yasuo Yamamoto
IPC分类号： B41C114
CPC分类号： B41C1/144 , B41J2/355
摘要： A micro porous plastic sheet is stencil plate made by a method for stencil plate making of a stencil sheet for stencil printing under the following conditions: heat is provided to form a negative image with TPH at −30≦Tp−Tm≦300° C. (Tp is heating peak temperature and Tm is melting temperature (melting point) of the sheet) and in 10≦To×100/Ts≦80% (To is current-carrying time period and Ts is current-carrying cycle), micro pores are closed by the pressure for stencil plate making of 0.1≦P≦1.0 MPa, and the thermal shrinkage rate of the sheet measured by TMA is set to 1≦STm-30≦20% (STm-30 is a thermal shrinking rate of the sheet at a temperature 30° C. lower than the melting point TM).
摘要翻译：微孔塑料片是在以下条件下通过用于模版印刷的蜡纸的蜡纸制造方法制成的模板：在-30℃= Tp-Tm <= 300°处提供热量以形成具有TPH的负像（Tp是加热峰值温度，Tm是片材的熔融温度（熔点）），在10

2. 发明授权

US06841233B2 Source sheet for stencil printing, plate manufacturing method, and stencil printing method 失效
标题翻译：用于模版印刷，印版制作方法和模版印刷方法的源片
公开(公告)号：US06841233B2
公开(公告)日：2005-01-11
申请号：US10244745
申请日：2002-09-17
申请人： Hideyuki Kinoshita , Yasuo Yamamoto , Tsutomu Nio , Toru Nakai , Yuichi Ogawa
发明人： Hideyuki Kinoshita , Yasuo Yamamoto , Tsutomu Nio , Toru Nakai , Yuichi Ogawa
IPC分类号： B41C1/14 , B41M1/12 , B41N1/24 , D21H19/70 , B32B3/26
CPC分类号： B41M1/12 , B41C1/14 , B41N1/242 , B41N1/243 , Y10T428/24802 , Y10T428/249953 , Y10T428/249979 , Y10T428/249981
摘要： The invention relates a source sheet for stencil printing comprising: a porous support material; a porous resin film formed on a surface of the porous support material; wherein, the porous support material has a maximum air permeability of 90 s/100 cc; and, the porous resin film has a maximum air permeability of 600 s/100 cc; preferably, the air permeability of the porous support material≦the air permeability of the porous resin film. According to the source sheet and plate manufacturing method of the present invention, the plate for the stencil printing can be obtained which is superior in the pore block property and in which the thermal deformation of the source sheet during the plate manufacturing is suppressed.
摘要翻译：本发明涉及一种用于模版印刷的源片，包括：多孔支撑材料; 形成在所述多孔载体材料的表面上的多孔树脂膜;其中，所述多孔载体材料的最大透气度为90s / 100cc; 多孔树脂膜的最大透气度为600μs/ 100cc，优选多孔性支持体的透气性为多孔树脂膜的透气性。根据来源片和板的制造方法在本发明中，可以获得在孔体积特性方面优异且抑制板制造时的源片的热变形的模版印刷用板。

3. 发明授权

US06675705B2 Microporous stencil sheet printing system and method of printing 失效
标题翻译：微孔蜡纸印刷系统及印刷方法
公开(公告)号：US06675705B2
公开(公告)日：2004-01-13
申请号：US10372244
申请日：2003-02-25
申请人： Yasuo Yamamoto , Hideyuki Kinoshita
发明人： Yasuo Yamamoto , Hideyuki Kinoshita
IPC分类号： B41N124
CPC分类号： B41C1/14 , B41C1/147 , B41N1/24 , Y10T428/249979 , Y10T428/249987
摘要： A microporous stencil sheet for use in stencil printing and methods for making stencil master using this microporous stencil sheet are disclosed herein. The microporous stencil sheet is for use in stencil printing using a low-viscosity ink with a viscosity ranging from 0.001 to 1 Pa·s, comprises an inelastic resin film and has an air permeability ranging from 1 to 600 seconds and a thickness ranging from 1 to 100 &mgr;m. The methods for making stencil master using this microporous stencil sheet comprise the step of closing the micropores of the stencil sheet in a non-printing portion of a desired printed image.
摘要翻译：本文公开了用于模版印刷的微孔蜡纸以及使用该微孔蜡纸制造模版母版的方法。微孔蜡纸用于使用粘度范围为0.001至1Pa·s的低粘度油墨的模版印刷，包括非弹性树脂膜，透气度为1至600秒，厚度范围为1 到100个妈妈使用这种微孔蜡纸制造模板母版的方法包括在所需打印图像的非打印部分中封闭蜡纸的微孔的步骤。

4. 发明授权

US09278035B2 Individually packaged product 有权
标题翻译：单独包装的产品
公开(公告)号：US09278035B2
公开(公告)日：2016-03-08
申请号：US13876549
申请日：2011-09-22
申请人： Akira Hashino , Yuki Noda , Shinpei Komatsu , Hideyuki Kinoshita
发明人： Akira Hashino , Yuki Noda , Shinpei Komatsu , Hideyuki Kinoshita
IPC分类号： A61F13/551 , A61F13/84
CPC分类号： A61F13/5514 , A61F2013/8497
摘要： An individually wrapped absorbent article that is wrapped in a wrapping sheet wherein the wrapping sheet has a colored part on the inner surface on the side of the absorbent article, and the colored part of the wrapping sheet can be seen from the outside of the individually wrapped product but the absorbent article cannot be seen from the outside of the individually wrapped product.
摘要翻译：一种单独包装的吸收制品，其被包裹在包装片中，其中包装片在吸收制品侧面的内表面上具有着色部分，并且可以从单独包裹的外部看到包装片的着色部分产品，但从单独包装的产品的外部看不到吸收制品。

5. 发明申请

US20120046630A1 ABSORBENT ARTICLE 审中-公开
标题翻译：吸收品
公开(公告)号：US20120046630A1
公开(公告)日：2012-02-23
申请号：US13143678
申请日：2010-01-07
申请人： Jun Kudo , Hideyuki Kinoshita , Yuji Takahashi , Mari Minami , Sarinee Phichetkitjawat , Akira Hashino
发明人： Jun Kudo , Hideyuki Kinoshita , Yuji Takahashi , Mari Minami , Sarinee Phichetkitjawat , Akira Hashino
IPC分类号： A61F13/475
CPC分类号： A61F13/4753 , A61F13/5616
摘要： An absorbent article includes a front wing unit which is provided outside in a widthwise direction of the absorbent article more than an absorber, and extends to the outside in the widthwise direction of the absorber in an inside leg region which corresponds to an inside leg portion of a wearer; and a gather which is provided at each of edges of the absorber, which extends along a longitudinal direction of the absorbent article, and which prevents a bodily fluid of the wearer from leaking from the absorbent article. The front wing unit has a base part which is positioned at an innermost side in a widthwise direction of the absorbent article in the front wing unit; and the leakage gather extends to the outside in the widthwise direction of the absorbent article more than the base part as seen in plan view of the absorbent article.
摘要翻译：吸收性物品包括前翼单元，该前翼单元在吸收性物品的宽度方向上设置在吸收体的宽度方向外侧，并且在吸收体的宽度方向上延伸到与腿部的内侧腿部对应的内侧腿部的外侧穿戴者以及设置在吸收体的沿着吸收性物品的长度方向延伸的各边缘的褶皱，并且防止穿用者的体液从吸收性物品泄漏。前翼单元具有基部，其位于前翼单元中的吸收性物品的宽度方向的最内侧; 并且如在吸收性物品的平面图中看到的那样，泄漏聚集体在吸收性物品的宽度方向上比基部延伸到外侧。

6. 发明授权

US07626235B2 NAND nonvolatile semiconductor memory device and method of manufacturing NAND nonvolatile semiconductor memory device 失效
标题翻译： NAND非易失性半导体存储器件和制造NAND非易失性半导体存储器件的方法
公开(公告)号：US07626235B2
公开(公告)日：2009-12-01
申请号：US11812830
申请日：2007-06-22
申请人： Hideyuki Kinoshita
发明人： Hideyuki Kinoshita
IPC分类号： H01L29/76 , H01L29/94
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A NAND nonvolatile semiconductor memory device that has a memory cell array region and a selection gate region, has a semiconductor layer; a gate insulating film disposed on said semiconductor layer; a plurality of first electrode layers selectively disposed on said gate insulating film; a first device isolation insulating film formed in said memory cell array region and extends from between said adjacent first electrode layers into said semiconductor layer for device isolation; a second device isolation insulating film formed in said selection gate region and extends from between said adjacent first electrode layers into said semiconductor layer for device isolation; an interpoly insulating film formed at least on the top of said first electrode layers and said first device isolation insulating film in said memory cell array region; a second electrode layer disposed on said interpoly insulating film; and a third electrode layer disposed on said second electrode layer, said second device isolation insulating film and the first electrode layers in said selection gate region, wherein the height of the top surface of said second device isolation insulating film is greater than the height of the top surface of said first device isolation insulating film.
摘要翻译：具有存储单元阵列区域和选择栅极区域的NAND非易失性半导体存储器件具有半导体层; 设置在所述半导体层上的栅极绝缘膜; 选择性地设置在所述栅极绝缘膜上的多个第一电极层; 形成在所述存储单元阵列区域中并从所述相邻第一电极层之间延伸到所述半导体层中以进行器件隔离的第一器件隔离绝缘膜; 形成在所述选择栅极区中并从所述相邻的第一电极层之间延伸到所述半导体层中以用于器件隔离的第二器件隔离绝缘膜; 至少形成在所述存储单元阵列区域中的所述第一电极层和所述第一器件隔离绝缘膜的顶部上的多晶绝缘膜; 设置在所述多晶绝缘膜上的第二电极层; 以及设置在所述第二电极层上的第三电极层，所述第二器件隔离绝缘膜和所述选择栅极区中的第一电极层，其中所述第二器件隔离绝缘膜的顶表面的高度大于所述第一器件隔离绝缘膜的顶表面。

7. 发明申请

US20080020530A1 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件和半导体器件的制造方法
公开(公告)号：US20080020530A1
公开(公告)日：2008-01-24
申请号：US11829759
申请日：2007-07-27
申请人： Hideyuki Kinoshita
发明人： Hideyuki Kinoshita
IPC分类号： H01L21/336
CPC分类号： H01L27/115 , H01L27/11521 , H01L27/11524
摘要： A manufacturing method of a semiconductor device disclosed herein, comprises: forming a first member to be patterned on a semiconductor substrate; forming a second member to be patterned on the first member; forming a third member to be patterned on the second member; patterning the third member to form a first line pattern and a first connecting portion in the third member, the first line pattern having a plurality of parallel linear patterns and the first connecting portion connecting the linear patterns on at least one end side of the linear patterns of the first line pattern; etching the second member with the third member as a mask to form a second line pattern and a second connecting portion in the second member, the second line pattern being the same pattern as the first line pattern and the second connecting portion being the same pattern as the first connecting portion; removing the second connecting portion of the second member; and etching the first member with the second member as a mask.
摘要翻译：本文公开的半导体器件的制造方法包括：在半导体衬底上形成待图案化的第一构件; 在第一构件上形成待图案化的第二构件; 在所述第二构件上形成要被图案化的第三构件; 图案化第三构件以在第三构件中形成第一线图案和第一连接部分，第一线图案具有多个平行线形图案，并且第一连接部分在线形图案的至少一端侧连接线图案的第一行模式; 用第三构件作为掩模蚀刻第二构件以在第二构件中形成第二线图案和第二连接部分，第二线图案与第一线图案相同，图案与第二连接部分相同，第一连接部分; 移除所述第二构件的所述第二连接部分; 并用第二部件作为掩模蚀刻第一部件。

8. 发明申请

US20070003881A1 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20070003881A1
公开(公告)日：2007-01-04
申请号：US11453087
申请日：2006-06-15
申请人： Eiji Ito , Hideyuki Kinoshita , Tetsuya Kamigaki , Koji Hashimoto
发明人： Eiji Ito , Hideyuki Kinoshita , Tetsuya Kamigaki , Koji Hashimoto
IPC分类号： G03F7/26
CPC分类号： G03F7/0035 , H01L2924/0002 , H01L2924/00
摘要： A method of manufacturing a semiconductor device includes forming a plurality of dummy line patterns arranged at a first pitch on an underlying region, forming first mask patterns having predetermined mask portions formed on long sides of the dummy line patterns, each of the first mask patterns having a closed-loop shape and surrounding each of the dummy line patterns, removing the dummy line patterns, forming a second mask pattern having a first pattern portion which covers end portions of the first mask patterns and inter-end portions each located between adjacent ones of the end portions, etching the underlying region using the first mask patterns and the second mask pattern as a mask to form trenches each located between adjacent ones of the predetermined mask portions, and filling the trenches with a predetermined material.
摘要翻译：一种制造半导体器件的方法包括在下面的区域上形成以第一间距布置的多个虚拟线图案，形成具有形成在虚拟线图案的长边上的预定掩模部分的第一掩模图案，每个第一掩模图案具有闭环形状并且围绕每个虚拟线图案，去除虚拟线图案，形成具有第一图案部分的第二掩模图案，该第一图案部分覆盖第一掩模图案的端部和位于相邻的第一掩模图案的端部之间的端部部分端部，使用第一掩模图案和第二掩模图案作为掩模蚀刻下面的区域，以形成各自位于相邻的预定掩模部分之间的沟槽，并且用预定的材料填充沟槽。

9. 发明授权

US06811866B1 Heat-sensitive stencil sheet 有权
标题翻译：热敏蜡纸
公开(公告)号：US06811866B1
公开(公告)日：2004-11-02
申请号：US09395805
申请日：1999-09-14
申请人： Hideyuki Kinoshita , Hiroshi Watanabe
发明人： Hideyuki Kinoshita , Hiroshi Watanabe
IPC分类号： B32B900
CPC分类号： B41N1/24 , Y10S428/913 , Y10T428/249987 , Y10T428/31
摘要： A heat-sensitive stencil sheet is provided, which is inhibited from jamming at the time of carrying or creasing at the time of winding around a drum, and thus excellent in carrying property and winding property. This heat-sensitive stencil sheet comprises a laminate of a thermoplastic resin film and a porous substrate mainly composed of synthetic fibers, and satisfies 0.150≦T−H wherein T denotes an arithmetic average value (g·cm/cm) of absolute values of KES bending torque in lengthwise direction of the stencil sheet at curvatures of +2.3 and −2.3 cm−1, H denotes a bending hysteresis (g·cm/cm), and T−H denotes a residual torque (g·cm/cm).
摘要翻译：提供了一种热敏蜡纸，其在绕着卷筒时被携带或压痕时被阻止，从而具有优异的承载性能和卷绕性能。这种热敏蜡纸包括热塑性树脂膜和主要由合成纤维构成的多孔基材的层压体，并且满足0.150≤TTH，其中T表示KES弯曲绝对值的算术平均值（g.cm / cm）曲线片长度方向的扭矩为+2.3和-2.3cm -1，H表示弯曲滞后（g.cm / cm），TH表示残余扭矩（g.cm / cm）。

10. 发明授权

US06768161B2 Semiconductor device having floating gate and method of producing the same 失效
标题翻译：具有浮动栅极的半导体器件及其制造方法
公开(公告)号：US06768161B2
公开(公告)日：2004-07-27
申请号：US10157986
申请日：2002-05-31
申请人： Hideyuki Kinoshita
发明人： Hideyuki Kinoshita
IPC分类号： H01L29780
CPC分类号： H01L27/11521 , H01L27/115
摘要： A semiconductor memory device, having at least one floating gate, includes a semiconductor substrate; at least one device-isolation region buried in the semiconductor substrate, having a top surface protruding from a top surface of the semiconductor substrate, the top surface of the device isolation region having a concave section that has a depression thereon; at least one gate-insulating film formed on the semiconductor substrate; a first gate formed on the gate-insulating film, the device-isolation region and the depression; a gate-to-gate insulating film formed on the first gate and in the concave section and the depression of the device-isolation region; and a second gate formed on the gate-to-gate insulation film, the depression being filled with the second gate.
摘要翻译：具有至少一个浮动栅极的半导体存储器件包括半导体衬底; 至少一个器件隔离区域，埋置在半导体衬底中，具有从半导体衬底的顶表面突出的顶表面，器件隔离区的顶表面具有凹陷部分; 形成在所述半导体基板上的至少一个栅极绝缘膜; 栅极绝缘膜上形成的第一栅极，器件隔离区域和凹陷部; 形成在所述第一栅极和所述凹部以及所述器件隔离区域的凹部中的栅极至栅极绝缘膜; 以及形成在所述栅极至栅极绝缘膜上的第二栅极，所述凹陷填充有所述第二栅极。

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