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1. 发明授权

US5436614A Thermal analog fire detector 失效
标题翻译：热模拟火灾探测器
公开(公告)号：US5436614A
公开(公告)日：1995-07-25
申请号：US87502
申请日：1993-07-02
申请人： Yasuo Torikoshi , Hiromitsu Ishii
发明人： Yasuo Torikoshi , Hiromitsu Ishii
IPC分类号： G01K7/25 , G08B17/06 , G08B17/00
CPC分类号： G08B17/06 , G01K7/25
摘要： A thermal analog fire detector which is excellent in measurement precision and resolution in both the high and low temperature ranges and which has a wide range of measuring temperatures. A constant voltage E from a constant voltage circuit is supplied to a CPU, an A/D converter and a constant current circuit. The constant current circuit is connected in series to a thermistor. The constant current circuit is constructed to supply a constant current, the value of which being variable in a plurality of stages, to the thermistor controlled by the CPU. The CPU switches the constant current of the constant current circuit according to the measured temperature data. A voltage V across the thermistor is converted into digital data by the A/D converter, and then the converted data is supplied to the CPU.
摘要翻译：一种热模拟火灾探测器，在高温和低温范围内具有优异的测量精度和分辨率，并具有广泛的测量温度范围。来自恒压电路的恒定电压E被提供给CPU，A / D转换器和恒流电路。恒流电路与热敏电阻串联。恒流电路被构造成将其值可以在多个级中变化的恒定电流提供给由CPU控制的热敏电阻。 CPU根据测量的温度数据切换恒流电路的恒定电流。通过A / D转换器将热敏电阻两端的电压V转换为数字数据，然后将转换的数据提供给CPU。

2. 发明授权

US08575246B2 Flame-retardant thermoplastic resin composition and molded article 有权
标题翻译：阻燃热塑性树脂组合物和模制品
公开(公告)号：US08575246B2
公开(公告)日：2013-11-05
申请号：US13145678
申请日：2010-07-05
申请人： Hiromitsu Ishii , Kentaro Togawa , Sadanori Kumazawa
发明人： Hiromitsu Ishii , Kentaro Togawa , Sadanori Kumazawa
IPC分类号： C08K5/34 , C07F9/48
CPC分类号： C08K5/0066 , C08K5/16 , C08K5/5313 , C08L77/00 , C08L77/02
摘要： A flame-retardant thermoplastic resin composition that has a largely decreased corrosiveness to metals while maintaining a high degree of flame retardancy is provided, which is produced by adding a phosphinic acid salt and a compound having a specific structure to a thermoplastic resin, and molded articles with largely decreased corrosiveness to metals are also provided, so that useful molded articles can be provided as materials for mechanical machine parts, electric/electronic components, and automotive parts. The flame-retardant thermoplastic resin composition includes 65 to 99 wt % of (A) a thermoplastic resin, 1 to 35 wt % of (B) at least one phosphinic acid salt selected from the group of phosphinic acid salt, diphosphinic acid salt, polymer of phosphinic acid salts, and polymer of diphosphinic acid salts, and 0.001 to 0.70 wt % of (C) a compound having a specific, and molded articles produced therefrom.
摘要翻译：提供了通过向热塑性树脂中加入次膦酸盐和具有特定结构的化合物而制备的，同时保持高阻燃性而对金属的腐蚀性大大降低的阻燃热塑性树脂组合物，以及模塑制品还提供了对金属的腐蚀性大大降低，从而可以提供有用的模制品作为机械机械部件，电气/电子部件和汽车部件的材料。阻燃性热塑性树脂组合物包含（A）热塑性树脂65〜99重量％，（B）1〜35重量％的选自次膦酸盐，二次膦酸盐，聚磷酸盐的至少一种次膦酸盐的次膦酸盐和二次膦酸盐的聚合物和0.001〜0.70重量％的（C）具有特定的化合物和由其制备的模制品。

3. 发明授权

US08379175B2 Interconnection structure between signal line and thin film transistor 有权
标题翻译：信号线与薄膜晶体管之间的互连结构
公开(公告)号：US08379175B2
公开(公告)日：2013-02-19
申请号：US12500376
申请日：2009-07-09
申请人： Hiromitsu Ishii
发明人： Hiromitsu Ishii
IPC分类号： G02F1/1343
CPC分类号： G02F1/1368 , G02F1/136213 , G02F1/136286 , G02F2201/40 , H01L27/124
摘要： A liquid crystal display device achieving high aperture rate and high definition is disclosed. The liquid crystal display device comprises a plurality of scanning lines 12, an insulating film 21 covering the plurality of scanning lines, a plurality of signal lines 13 having an intersection 13D with each of the scanning lines 12, pixel electrodes formed adjacent to the scanning line and the signal line, a plurality of thin film transistors, each of which having a gate electrode, drain electrode 14b, and source electrode 14a, a gate electrode connected to a semiconductor layer, a gate insulating film, and the scanning lines, a drain electrode 14b or a source electrode 14a connected to the signal lines, the other of the drain and the source electrodes connected to the pixel electrode, the drain electrode and the source electrode are linearly disposed along the signal lines, and a plurality of relay electrodes 17 in which a first overlapped portion 17a overlaps the intersection 13D and a second overlapped portion 17c overlaps one of the electrodes, thus connecting that electrode to the signal lines. The first overlapped portion of the relay electrode has a length sufficient to cover the stepped portions 13E, 13D of the insulating film 21 corresponding to the both ends 12b, 12c of the scanning line 12 in a width direction.
摘要翻译：公开了一种实现高开口率和高清晰度的液晶显示装置。液晶显示装置包括多条扫描线12，覆盖多条扫描线的绝缘膜21，与扫描线12相交的多个信号线13，与扫描线相邻形成的像素电极信号线，多个薄膜晶体管，每个具有栅电极，漏电极14b和源电极14a，连接到半导体层的栅电极，栅极绝缘膜和扫描线，漏极电极14b或连接到信号线的源电极14a，连接到像素电极，漏电极和源电极的漏极和源极中的另一个沿着信号线线性地布置，并且多个继电器电极17 其中第一重叠部分17a与交叉点13D重叠，并且第二重叠部分17c与电极之一重叠，从而将该电极连接到信号线。继电器电极的第一重叠部分具有足以覆盖与扫描线12的宽度方向的两端12b，12c对应的绝缘膜21的台阶部13E，13D的长度。

4. 发明授权

US07956970B2 Liquid crystal display device 有权
标题翻译：液晶显示装置
公开(公告)号：US07956970B2
公开(公告)日：2011-06-07
申请号：US11862037
申请日：2007-09-26
申请人： Minoru Yamaguchi , Hiromitsu Ishii
发明人： Minoru Yamaguchi , Hiromitsu Ishii
IPC分类号： G02F1/1337
CPC分类号： G02F1/136213 , G02F1/133707 , G02F1/1393 , G02F2001/134345
摘要： A liquid crystal display device provides, on the internal side of one substrate of a pair of substrates a plurality of pixel electrodes, a plurality of TFTs, a plurality of scan lines and signal lines, and a plurality of convex sections each formed on the internal side of the other substrate so as to be located substantially on a center part of each of the plurality of predetermined regions provided in each of the plurality of pixels. Further, the liquid crystal display device provides an opposing electrode on the internal side of the one substrate. Then, the liquid crystal display device provides vertical alignment films on the respective internal sides of the pair of substrates, and a liquid crystal layer having negative dielectric anisotropy and inserted in the gap between the pair of substrates.
摘要翻译：液晶显示装置在一对基板的一个基板的内侧设置多个像素电极，多个TFT，多条扫描线和信号线，以及多个凸部，每个形成在内部以便基本上位于设置在多个像素中的每一个中的多个预定区域中的每一个的中心部分上。此外，液晶显示装置在一个基板的内侧提供相对电极。然后，液晶显示装置在一对基板的各个内侧上提供垂直取向膜，并且在一对基板之间的间隙中插入具有负介电各向异性的液晶层。

5. 发明授权

US07863382B2 Resin composition and molded article comprising the same 有权
标题翻译：树脂组合物和包含其的模制品
公开(公告)号：US07863382B2
公开(公告)日：2011-01-04
申请号：US11663150
申请日：2005-09-20
申请人： Hiromitsu Ishii , Takashi Nagao , Hiroyuki Ohme
发明人： Hiromitsu Ishii , Takashi Nagao , Hiroyuki Ohme
IPC分类号： C08F242/00
CPC分类号： C08L67/04 , C08K3/016 , C08K5/0066 , C08K5/353 , C08L51/00 , C08L69/00 , C08L101/06 , Y10S525/909 , Y10S525/911 , C08L2666/02 , C08L2666/18
摘要： A resin composition in which a polylactic acid resin (A) 95-5 wt %, an aromatic polycarbonate resin (B) 5-95 wt %, and, with respect to 100 wt parts of the total of the (A) and the (B), at least one compatibilizer selected from a polymer compound containing an acrylic resin or styrene resin unit as a graft (C), a polymer compound to which a glycidyl compound or an acid anhydride is grafted or copolymerized (D) and an oxazoline compound, an oxazine compound and a carbodiimide compound (E) are compounded.
摘要翻译：一种树脂组合物，其中95-5重量％的聚乳酸树脂（A），5-95重量％的芳族聚碳酸酯树脂（B），相对于（A）和（A）的总和的100重量份， B），选自含有丙烯酸树脂或苯乙烯树脂单元作为接枝物（C）的高分子化合物中的至少一种增容剂，缩水甘油基化合物或酸酐接枝或共聚的高分子化合物（D）和恶唑啉化合物，恶嗪化合物和碳二亚胺化合物（E）。

6. 发明授权

US07585698B2 Thin film transistor having oxide semiconductor layer and manufacturing method thereof 有权
标题翻译：具有氧化物半导体层的薄膜晶体管及其制造方法
公开(公告)号：US07585698B2
公开(公告)日：2009-09-08
申请号：US12190102
申请日：2008-08-12
申请人： Hiromitsu Ishii
发明人： Hiromitsu Ishii
IPC分类号： H01L21/00
CPC分类号： H01L29/7869 , G02F1/1368
摘要： A thin film transistor has a semiconductor thin film including zinc oxide, a protection film formed on entirely the upper surface of the semiconductor thin film, a gate insulating film formed on the protection film, a gate electrode formed on the gate insulating film above the semiconductor thin film, and a source electrode and drain electrode formed under the semiconductor thin film so as to be electrically connected to the semiconductor thin film.
摘要翻译：薄膜晶体管具有包括氧化锌的半导体薄膜，整体上形成在半导体薄膜的上表面上的保护膜，形成在保护膜上的栅极绝缘膜，形成在半导体上方的栅极绝缘膜上的栅电极薄膜，以及形成在半导体薄膜下面的源电极和漏电极，以便与半导体薄膜电连接。

7. 发明申请

US20070187760A1 Thin film transistor including low resistance conductive thin films and manufacturing method thereof 失效
标题翻译：包括低电阻导电薄膜的薄膜晶体管及其制造方法
公开(公告)号：US20070187760A1
公开(公告)日：2007-08-16
申请号：US11701343
申请日：2007-02-01
申请人： Mamoru Furuta , Takashi Hirao , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu , Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida
发明人： Mamoru Furuta , Takashi Hirao , Hiroshi Furuta , Tokiyoshi Matsuda , Takahiro Hiramatsu , Hiromitsu Ishii , Hitoshi Hokari , Motohiko Yoshida
IPC分类号： H01L27/12 , H01L21/84
CPC分类号： H01L29/7869 , H01L29/41733 , H01L29/42384 , H01L29/66969 , H01L29/78606 , H01L29/78618
摘要： A thin film transistor includes a substrate, and a pair of source/drain electrodes (i.e., a source electrode and a drain electrode) formed on the substrate and defining a gap therebetween. A pair of low resistance conductive thin films are provided such that each coats at least a part of one of the source/drain electrodes. The low resistance conductive thin films define a gap therebetween. An oxide semiconductor thin film layer is continuously formed on upper surfaces of the pair of low resistance conductive thin films and extends along the gap defined between the low resistance conductive thin films so as to function as a channel. Side surfaces of the oxide semiconductor thin film layer and corresponding side surfaces of the low resistance conductive thin films coincide with each other in a channel width direction of the channel.
摘要翻译：薄膜晶体管包括基板和形成在基板上并在其间形成间隙的一对源/漏电极（即源电极和漏电极）。提供一对低电阻导电薄膜，使得每个涂覆源极/漏极之一的至少一部分。低电阻导电薄膜在它们之间限定了间隙。在一对低电阻导电薄膜的上表面上连续地形成氧化物半导体薄膜层，并且沿着限定在低电阻导电薄膜之间的间隙延伸以作为沟道起作用。氧化物半导体薄膜层的侧表面和低电阻导电薄膜的相应侧表面在沟道的沟道宽度方向上彼此重合。

8. 发明申请

US20060194500A1 Thin film transistor panel 有权
公开(公告)号：US20060194500A1
公开(公告)日：2006-08-31
申请号：US11357595
申请日：2006-02-17
申请人： Hiromitsu Ishii
发明人： Hiromitsu Ishii
IPC分类号： H01J9/24 , H01L29/10
CPC分类号： H01L27/124 , G02F1/134336 , G02F1/136227 , G02F2201/40 , H01L27/1214 , H01L27/1225 , H01L27/1255 , H01L29/12 , H01L29/78681
摘要： A thin film transistor panel, including: a transparent substrate; scanning lines made of a transparent electroconductive material, formed on the transparent substrate; data lines formed on the transparent substrate to be perpendicular to the scanning lines; thin film transistors, each provided with a transparent gate electrode connected to one of the scanning lines, a transparent drain electrode connected to one of the data line, a transparent source electrode and a transparent semiconductor thin film; and transparent pixel electrodes connected to the thin film transistors, wherein each of the pixel electrodes is formed to cover each of the thin film transistors.

9. 发明授权

US5243202A Thin-film transistor and a liquid crystal matrix display device using thin-film transistors of this type 失效
标题翻译：薄膜晶体管和使用这种薄膜晶体管的液晶矩阵显示装置
公开(公告)号：US5243202A
公开(公告)日：1993-09-07
申请号：US4641
申请日：1993-01-12
申请人： Hisatoshi Mori , Syunichi Sato , Naohiro Konya , Ichiro Ohno , Hiromitsu Ishii , Kunihiro Matsuda
发明人： Hisatoshi Mori , Syunichi Sato , Naohiro Konya , Ichiro Ohno , Hiromitsu Ishii , Kunihiro Matsuda
IPC分类号： H01L21/316 , H01L21/318 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/49 , H01L29/786
CPC分类号： H01L21/0217 , H01L21/02164 , H01L21/02183 , H01L21/022 , H01L21/02211 , H01L21/02266 , H01L21/02274 , H01L21/31612 , H01L21/3185 , H01L27/1214 , H01L29/4908 , H01L29/66757 , H01L29/66765 , H01L29/78663
摘要： A thin-film transistor comprises a gate electrode formed on a glass substrate, a gate insulating film formed essentially over an entire surface of the substrate to cover the gate electrode, a non-single-crystal silicon semiconductor film placed on the gate insulating film to cover the gate electrode; and a drain electrode and a source electrode spaced a specified distance apart on the semiconductor film and electrically connected to the semiconductor film so as to form the channel region of the transistor. The gate electrode is made of titanium-containing aluminum.
摘要翻译：薄膜晶体管包括形成在玻璃基板上的栅极电极，基本上在基板的整个表面上形成以覆盖栅电极的栅极绝缘膜，将栅极绝缘膜上的非单晶硅半导体膜，覆盖栅电极; 以及在半导体膜上间隔规定距离并与半导体膜电连接的漏电极和源电极，以形成晶体管的沟道区。栅电极由含钛的铝制成。

10. 发明授权

US5041200A Method of manufacturing crystalline thin-film of rare-earth compounds 失效
标题翻译：制造稀土化合物结晶薄膜的方法
公开(公告)号：US5041200A
公开(公告)日：1991-08-20
申请号：US497894
申请日：1990-03-22
申请人： Hiromitsu Ishii , Tsuneharu Takeda , Kyuya Baba , Ikuhiro Yamaguchi
发明人： Hiromitsu Ishii , Tsuneharu Takeda , Kyuya Baba , Ikuhiro Yamaguchi
IPC分类号： C23C14/14 , C30B23/02 , H01F10/12 , H01F10/18 , H01F10/32 , H01F41/14 , H01F41/20
CPC分类号： B82Y25/00 , C23C14/14 , C30B23/02 , C30B29/52 , H01F10/126 , H01F10/18 , H01F10/32 , H01F41/14
摘要： Gd and Bi are used as sputter sources and are simultaneously sputtered, or sputtered alternately, each time in an amount for forming a layer having a thickness of 10 atoms or less, thereby forming a thin film on a substrate, in which Gd and Bi are mixed at a ratio of 4:3. The thin film is heat-treated to form a crystalline thin film having a phase represented by Gd.sub.4 Bi.sub.3.
摘要翻译： Gd和Bi用作溅射源，并且每次以交替的方式溅射或溅射，以形成厚度为10个或更少的层的量，从而在基底上形成薄膜，其中Gd和Bi是以4：3的比例混合。对该薄膜进行热处理，形成具有Gd4Bi3表示的相的结晶性薄膜。

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