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    • 5. 发明授权
    • Method of driving antiferroelectric liquid crystal device
    • 反铁电液晶装置的驱动方法
    • US5615026A
    • 1997-03-25
    • US375167
    • 1995-01-18
    • Mitsuhiro Koden
    • Mitsuhiro Koden
    • G02F1/133G02F1/1337G02F1/136G02F1/1368G09G3/20G09G3/36G02F1/13
    • G09G3/3651G09G3/2011
    • A method of driving an antiferroelectric liquid crystal device, comprising a pair of substrates, each providing electrodes, insulating films and orientation films in this order thereon, which is arranged so as to be opposed to each other and interposes an antiferroelectric liquid crystal composition between the orientation films, wherein electrode on either one of the substrates comprises a plurality of scanning electrodes and a plurality of signal electrodes in a matrix form and a thin film transistor at each point of intersection of the matrix, which comprises transmitting a signal from the scanning electrode to the thin film transistor to turn on and synchronistically applying a zero or positive selective voltage waveform corresponding to a desired display to the signal electrode of odd-numbered frames and a zero or negative selective voltage waveform corresponding to the desired display to the signal electrode of even-numbered frames.
    • 一种驱动反铁电液晶装置的方法,包括一对基板,每个基板依次提供电极,绝缘膜和取向膜,其被布置为彼此相对并且将反铁电液晶组合物插入在 取向膜,其中任一个基板上的电极包括多个扫描电极和矩阵形式的多个信号电极以及在矩阵的每个交点处的薄膜晶体管,其包括从扫描电极发送信号 到薄膜晶体管以导通并同步地将对应于期望显示的零或正选择电压波形施加到奇数帧的信号电极和对应于期望显示的零或负选择电压波形到信号电极 偶数帧。
    • 8. 发明授权
    • Thin-film transistor
    • 薄膜晶体管
    • US4862234A
    • 1989-08-29
    • US125961
    • 1987-11-27
    • Mitsuhiro Koden
    • Mitsuhiro Koden
    • H01L29/786
    • H01L29/78666
    • A thin-film transistor comprising an insulating substrate; an opaque metal gate electrode disposed on a portion of said insulating substrate; a gate insulating layer disposed on said insulating substrate including said gate electrode; an a-Si semiconductor film disposed on the portion of said gate insulating layer, said a-Si semiconductor film having been formed to attain self-alignment with respect to said gate electrode; a-Si contact films constituting source and drain regions, respectively, with a gap therebetween disposed on said a-Si semiconductor film, the outer end of each of said contact films being formed to attain self-alignment with respect to said gate electrode; source and drain electrodes, respectively, disposed on said source and drain regions, the thickness of each of said a-Si semiconductor film and said a-Si contact film being 100 .ANG. or more and the total amount of thicknesses thereof being 1,000 .ANG. or less.
    • 1.一种薄膜晶体管,包括绝缘基板; 设置在所述绝缘基板的一部分上的不透明金属栅电极; 栅极绝缘层,设置在包括所述栅电极的所述绝缘基板上; 以及a-Si半导体膜,其设置在所述栅极绝缘层的所述部分上,所述a-Si半导体膜已经形成为相对于所述栅电极实现自对准; a-Si接触膜分别构成源极和漏极区,其间具有间隙,设置在所述a-Si半导体膜上,每个所述接触膜的外端被形成为相对于所述栅电极实现自对准; 源极和漏极,分别设置在所述源极和漏极区上,所述a-Si半导体膜和所述a-Si接触膜中的每一个的厚度为100或更大,并且其厚度的总量为1000或更小 。
    • 9. 发明授权
    • Storage container
    • 储存容器
    • US09091474B2
    • 2015-07-28
    • US13988410
    • 2011-11-22
    • Tetsuya IdeYuka UtsumiTomoko KaseMitsuhiro KodenShigeaki MizushimaKatsumi Kondoh
    • Tetsuya IdeYuka UtsumiTomoko KaseMitsuhiro KodenShigeaki MizushimaKatsumi Kondoh
    • F25D19/00F25D11/00F25D16/00
    • F25D11/00F25D11/006F25D16/00
    • A storage container can maintain a temperature inside a storage room not to cause a temperature distribution for a certain time even if the operation is stopped. In a storage container 1 storing preserved goods and having an electrical cooling function, the storage container 1 includes a container body 10 and a door 20. A space enclosed by the container body 10 and the door 20 forms a storage room 100. The container body 10 and the door 20 have respectively heat insulating portions 12, 22 and heat accumulating portions 14, 24. The heat accumulating portions 14, 24 are each made of at least one type of material that causes liquid-solid phase transition at a temperature between a controllable temperature inside the storage room 100 and a living environmental temperature. A value obtained by dividing temperature conductivity of the material by an amount of the material used per unit area of a wall surface of the storage room 100 is smaller in the heat accumulating portions 14, 24 arranged near a first area where a temperature is more apt to come closer to the living environmental temperature under a temperature distribution that is formed inside the storage room 100 with changes over time after stop of cooling, than in the heat accumulating portions 14, 24 arranged near a second area where a temperature is less apt to come closer to the living environmental temperature thereunder.
    • 即使操作停止,存储容器也可以保持储藏室内的温度不会导致温度分布一定时间。 在储存容器1的储存容器1中,储存容器1包括容器主体10和门20。容器主体10和门20包围的空间形成储藏室100.容器主体 10和门20分别具有绝热部分12,22和蓄热部分14,24。蓄热部分14,24分别由至少一种类型的材料制成,这些材料在 储存室100内的可控温度和居住环境温度。 通过将材料的温度导电率除以存储室100的壁面的单位面积所使用的材料的量而获得的值在布置在温度更接近的第一区域附近的蓄热部14,24中较小 在冷却停止后随时间变化而在储藏室100内部形成的温度分布下接近生活环境温度,而不是设置在温度较不易变形的第二区域附近的蓄热部14,24 接近生活环境温度。