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    • 8. 发明授权
    • Method of manufacturing thin-film transistors
    • 制造薄膜晶体管的方法
    • US06235561B1
    • 2001-05-22
    • US09114471
    • 1998-07-13
    • Masahiro SeikiAkira Kubo
    • Masahiro SeikiAkira Kubo
    • H01L2100
    • H01L21/28008G02F1/1368H01L29/42384H01L29/66765
    • An array substrate of a liquid crystal display device has a glass substrate on which gate lines, signal lines, pixel electrodes, and thin-film transistors are arranged. Each of the thin-film transistors includes a gate electrode composed of a part of one of the gate lines and including a first conductive layer formed on the glass substrate and a second conductive layer covering the first conductive layer. A gate insulating film is formed on the glass substrate and covers the gate electrode. A thin non-single-crystal silicon film is disposed on the gate insulating film on the gate electrode and includes a channel region. Source and drain electrodes are connected electrically to the thin non-single-crystal silicon film. The first conductive layer has two opposite side edge portions extending inclined at an angle to the surface of the substrate, the inclination angle of each side edge portion is ranges from 10° to 30°, so that the thin non-single-crystal silicon film has a continuous interface without bends, situated on the side of the gate insulating film in the channel region.
    • 液晶显示装置的阵列基板具有布置有栅极线,信号线,像素电极和薄膜晶体管的玻璃基板。 每个薄膜晶体管包括由一条栅极线的一部分组成的栅极,并且包括形成在玻璃基板上的第一导电层和覆盖第一导电层的第二导电层。 在玻璃基板上形成栅极绝缘膜并覆盖栅电极。 薄的非单晶硅膜设置在栅电极上的栅极绝缘膜上,并且包括沟道区。 源极和漏极电极与薄的非单晶硅膜电连接。 第一导电层具有相对于基板的表面倾斜一定角度的两个相对的侧边缘部分,每个侧边缘部分的倾斜角度在10°至30°的范围内,使得薄的非单晶硅膜 具有不弯曲的连续接口,位于通道区域中的栅极绝缘膜的一侧。
    • 9. 发明授权
    • Thin-film transistor with edge inclined gates and liquid crystal display
device furnished with the same
    • 具有边缘倾斜门的薄膜晶体管和配备相同的液晶显示装置
    • US5811835A
    • 1998-09-22
    • US701464
    • 1996-08-22
    • Masahiro SeikiAkira Kubo
    • Masahiro SeikiAkira Kubo
    • G02F1/136G02F1/1368H01L21/28H01L21/336H01L21/77H01L21/84H01L27/12H01L29/786H01L27/01
    • H01L21/28008H01L29/42384H01L29/66765G02F1/1368
    • An array substrate of a liquid crystal display device has a glass substrate on which gate lines, signal lines, pixel electrodes, and thin-film transistors are arranged. Each of the thin-film transistors includes a gate electrode composed of a part of one of the gate lines and including a first conductive layer formed on the glass substrate and a second conductive layer covering the first conductive layer. A gate insulating film is formed on the glass substrate and covers the gate electrode. A thin non-single-crystal silicon film is disposed on the gate insulating film on the gate electrode and includes a channel region. Source and drain electrodes are connected electrically to the thin non-single-crystal silicon film. The first conductive layer has two opposite side edge portions extending inclined at an angle to the surface of the substrate, the inclination angle of each side edge portion is ranges from 10.degree. to 30.degree., so that the thin non-single-crystal silicon film has a continuous interface without bends, situated on the side of the gate insulating film in the channel region.
    • 液晶显示装置的阵列基板具有布置有栅极线,信号线,像素电极和薄膜晶体管的玻璃基板。 每个薄膜晶体管包括由一条栅极线的一部分组成的栅极,并且包括形成在玻璃基板上的第一导电层和覆盖第一导电层的第二导电层。 在玻璃基板上形成栅极绝缘膜并覆盖栅电极。 薄的非单晶硅膜设置在栅电极上的栅极绝缘膜上,并且包括沟道区。 源极和漏极电极与薄的非单晶硅膜电连接。 第一导电层具有相对于基板的表面倾斜倾斜的两个相对的侧边缘部分,每个侧边缘部分的倾斜角度在10°至30°的范围内,使得薄的非单晶硅膜 具有不弯曲的连续接口,位于通道区域中的栅极绝缘膜的一侧。