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    • 3. 发明申请
    • FILM DEPOSITING APPARATUS AND METHOD
    • 薄膜沉积装置和方法
    • US20110014394A1
    • 2011-01-20
    • US12667429
    • 2009-07-29
    • Takamichi FujiiTakami ArakawaYasukazu Nihei
    • Takamichi FujiiTakami ArakawaYasukazu Nihei
    • C23C16/50C23C16/00
    • C23C14/3414C23C14/088H01J37/3426H01J37/3435H01L21/67103
    • A film depositing apparatus comprises: a vacuum vessel; an evacuating unit for evacuating the interior of the vacuum vessel; a gas supply source for supplying the vacuum vessel with gases necessary for film deposition; a backing plate that is placed within the vacuum vessel for holding a target formed by sintering; a substrate holder for holding a deposition substrate within the vacuum vessel in a face-to-face relation with the backing plate; and a power supply unit for supplying electric power between the backing plate and the substrate holder to generate a plasma within the vacuum vessel, wherein the backing plate has a smaller thermal expansion coefficient than that of the target which has a sinter density of at least 95%, the sinter density representing the ratio of the actual weight of a sintered form of the target to its theoretical weight.
    • 一种成膜设备包括:真空容器; 用于排空真空容器内部的排气单元; 用于向真空容器供应用于膜沉积所需的气体的气体供应源; 放置在真空容器内用于保持通过烧结形成的靶的背板; 衬底保持器,用于以与衬板的面对面关系将沉积衬底保持在真空容器内; 以及电源单元,用于在所述背板和所述衬底保持器之间提供电力以在所述真空容器内产生等离子体,其中所述背板的热膨胀系数小于所述靶的烧结密度为至少95的热膨胀系数 %,烧结密度代表目标烧结形式的实际重量与其理论重量之比。