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1. 发明授权

US06524927B1 Semiconductor device and method of fabricating the same 失效
公开(公告)号：US06524927B1
公开(公告)日：2003-02-25
申请号：US09390683
申请日：1999-09-07
申请人： Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
发明人： Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
IPC分类号： H01L2120
CPC分类号： H01L28/84 , H01L27/10814 , H01L27/10894 , H01L28/90
摘要： A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.

2. 发明授权

US06717202B2 HSG semiconductor capacitor with migration inhibition layer 失效
标题翻译： HSG半导体电容器具有迁移抑制层
公开(公告)号：US06717202B2
公开(公告)日：2004-04-06
申请号：US10271798
申请日：2002-10-17
申请人： Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
发明人： Yasuhiro Sugawara , Ryouichi Furukawa , Toshio Uemura , Akira Takamatsu , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Shinpei Iljima , Yuzuru Ohji
IPC分类号： H01L27108
CPC分类号： H01L28/84 , H01L27/10814 , H01L27/10894 , H01L28/90
摘要： A first silicon film is so formed as to extend along the inner surface of trenches 52 formed in a silicon oxide film 50, an oxide film is formed on the surface of the first silicon film, and a second amorphous silicon film is further deposited. Heat-treatment is applied to the surface of the second amorphous silicon film for seeding silicon nuclei and for promoting grain growth, and a granular silicon crystal 57 is grown from the second amorphous silicon film. In this way, the resistance of a lower electrode 59 of a capacitance device can be lowered.
摘要翻译：第一硅膜形成为沿着形成在氧化硅膜50中的沟槽52的内表面延伸，在第一硅膜的表面上形成氧化物膜，并且还沉积第二非晶硅膜。对第二非晶硅膜的表面施加热处理以接种硅核并促进晶粒生长，并且从第二非晶硅膜生长粒状硅晶体57。以这种方式，可以降低电容器件的下电极59的电阻。

3. 发明授权

US06770528B2 Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate 失效
标题翻译：在半导体衬底上形成绝缘膜制成的数据存储电容元件的方法
公开(公告)号：US06770528B2
公开(公告)日：2004-08-03
申请号：US10367737
申请日：2003-02-19
申请人： Ryouichi Furukawa , Kazuyuki Suko , Masayuki Hiranuma , Koichi Saitoh , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Maki Shimoda
发明人： Ryouichi Furukawa , Kazuyuki Suko , Masayuki Hiranuma , Koichi Saitoh , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Maki Shimoda
IPC分类号： H01L218242
CPC分类号： H01L21/76808 , H01L21/7684 , H01L21/76843 , H01L21/76865 , H01L21/76879 , H01L21/76897 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
摘要翻译：导电层以如下方式形成在由绝缘膜制成的沟槽中。首先，将非晶硅膜26A沉积在由氧化硅膜24制成的沟槽25中。然后通过旋涂在非晶硅膜26A上形成光致抗蚀剂膜30。然后，将曝光光施加到光致抗蚀剂膜30的整个表面，从而将位于沟槽25外部的光致抗蚀剂膜30的那些部分曝光。位于沟槽25中的光致抗蚀剂膜30的其它部分是没有光照，因为到达他们的光是不够的。此外，光致抗蚀剂膜30被显影，从而除去位于沟槽25外部并暴露于光的膜30的那些部分。此后，通过使用残留在沟槽25中的光致抗蚀剂膜30的未曝光部分作为掩模，通过干蚀刻去除位于沟槽25外部的非晶硅膜26A的那些部分。

4. 发明授权

US06444405B1 Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate 有权
标题翻译：在半导体基板上的绝缘膜上形成的沟槽或通孔中形成导电层的方法
公开(公告)号：US06444405B1
公开(公告)日：2002-09-03
申请号：US09610114
申请日：2000-06-30
申请人： Ryouichi Furukawa , Kazuyuki Suko , Masayuki Hiranuma , Koichi Saitoh , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Maki Shimoda
发明人： Ryouichi Furukawa , Kazuyuki Suko , Masayuki Hiranuma , Koichi Saitoh , Hirohiko Yamamoto , Tadanori Yoshida , Masayuki Ishizaka , Maki Shimoda
IPC分类号： H01L214763
CPC分类号： H01L21/76808 , H01L21/7684 , H01L21/76843 , H01L21/76865 , H01L21/76879 , H01L21/76897 , H01L27/10814 , H01L27/10817 , H01L27/10852 , H01L27/10855 , H01L27/10885 , H01L28/84 , H01L28/91 , H01L2924/0002 , H01L2924/00
摘要： Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film 26A is deposited in the trenches 25 made in a silicon oxide film 24. A photoresist film 30 is then formed on the amorphous silicon film 26A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film 30, thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches 25. The other parts of the photoresist film 30, which lie in the trenches 25 are not exposed to light because the light reaching them is inadequate. Further, the photoresist film 30 is developed thereby removing those parts of the film 30 which lie outside the trenches 25 and which have been exposed to light. Thereafter, those parts of the amorphous silicon film 26A, which lie outside the trenches 25, are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film 30 which remain in the trenches 25.
摘要翻译：导电层以如下方式形成在由绝缘膜制成的沟槽中。首先，将非晶硅膜26A沉积在由氧化硅膜24制成的沟槽25中。然后通过旋涂在非晶硅膜26A上形成光致抗蚀剂膜30。然后，将曝光光施加到光致抗蚀剂膜30的整个表面，从而将位于沟槽25外部的光致抗蚀剂膜30的那些部分曝光。位于沟槽25中的光致抗蚀剂膜30的其它部分是没有光照，因为到达他们的光是不够的。此外，光致抗蚀剂膜30被显影，从而除去位于沟槽25外部并暴露于光的膜30的那些部分。此后，通过使用残留在沟槽25中的光致抗蚀剂膜30的未曝光部分作为掩模，通过干蚀刻去除位于沟槽25外部的非晶硅膜26A的那些部分。

5. 发明授权

US07649290B2 Bearing bush and compound movement using the same 有权
标题翻译：轴承衬套和复合机芯使用相同
公开(公告)号：US07649290B2
公开(公告)日：2010-01-19
申请号：US11587144
申请日：2005-04-20
申请人： Hidekazu Michioka , Katsuya Iida , Takashi Matsumoto , Masayuki Ishizaka
发明人： Hidekazu Michioka , Katsuya Iida , Takashi Matsumoto , Masayuki Ishizaka
IPC分类号： H02K5/16
CPC分类号： F16C31/02
摘要： Provided is a bearing bush enabling excellent advancing and retreating movements of a shaft member by eliminating a clearance between the bearing bush and the shaft member to eliminate a backlash therebetween, capable of reducing a load of dimension control on both the bearing bush and the shaft member, and capable of being manufactured at a low cost. The bearing bush (4) for supporting the reciprocating movement of the shaft member (1) in an axial direction has a receiving hole through which the shaft member (1) is passed. Grooves (40) are sequentially formed at predetermined intervals in an inner peripheral surface of the bearing bush (4) facing the receiving hole. An inner diameter of the receiving hole is formed to be equal to or smaller than an outer diameter of the shaft member (1), and the bearing bush is press-fitted to an outer peripheral surface of the shaft member (1) in a state of a so-called interference fit.
摘要翻译：提供一种轴承衬套，通过消除轴承衬套和轴构件之间的间隙以消除它们之间的间隙，能够使轴构件具有优异的前进和后退运动，能够减小轴承衬套和轴构件两者的尺寸控制的负载并且能够以低成本制造。用于支撑轴构件（1）沿轴向的往复运动的轴承衬套（4）具有容纳孔，轴构件（1）穿过该容纳孔。在轴承衬套（4）的面向容纳孔的内周面中以规定的间隔依次形成槽（40）。接收孔的内径形成为等于或小于轴构件（1）的外径，并且轴承衬套在状态下压配合到轴构件（1）的外周面所谓的干扰配合。

6. 发明申请

US20080159667A1 Bearing Bush and Compound Movement Using the Same 有权
标题翻译：轴承布什和复合运动使用它
公开(公告)号：US20080159667A1
公开(公告)日：2008-07-03
申请号：US11587144
申请日：2005-04-20
申请人： Hidekazu Michioka , Katsuya Iida , Takashi Matsumoto , Masayuki Ishizaka
发明人： Hidekazu Michioka , Katsuya Iida , Takashi Matsumoto , Masayuki Ishizaka
IPC分类号： F16C31/02 , F16C33/10 , H02K41/02
CPC分类号： F16C31/02
摘要： Provided is a bearing bush enabling excellent advancing and retreating movements of a shaft member by eliminating a clearance between the bearing bush and the shaft member to eliminate a backlash therebetween, capable of reducing a load of dimension control on both the bearing bush and the shaft member, and capable of being manufactured at a low cost. The bearing bush (4) for supporting the reciprocating movement of the shaft member (1) in an axial direction has a receiving hole through which the shaft member (1) is passed. Grooves (40) are sequentially formed at predetermined intervals in an inner peripheral surface of the bearing bush (4) facing the receiving hole. An inner diameter of the receiving hole is formed to be equal to or smaller than an outer diameter of the shaft member (1), and the bearing bush is press-fitted to an outer peripheral surface of the shaft member (1) in a state of a so-called interference fit.
摘要翻译：提供一种轴承衬套，通过消除轴承衬套和轴构件之间的间隙以消除它们之间的间隙，能够使轴构件具有优异的前进和后退运动，能够减小轴承衬套和轴构件两者的尺寸控制的负载并且能够以低成本制造。用于支撑轴构件（1）沿轴向的往复运动的轴承衬套（4）具有容纳孔，轴构件（1）穿过该容纳孔。在轴承衬套（4）的面向容纳孔的内周面中以规定的间隔依次形成槽（40）。接收孔的内径形成为等于或小于轴构件（1）的外径，并且轴承衬套在状态下压配合到轴构件（1）的外周面所谓的干扰配合。

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