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    • 3. 发明申请
    • TOILET BOWL FLUSHING APPARATUS
    • 洗手盆冲洗装置
    • US20090151063A1
    • 2009-06-18
    • US12279940
    • 2007-02-16
    • Yasuhiro ShiraiAki ShirakoHaruo YamasakiKenichi ItoYasuhiro KondoKen HirabayashiAtsushi Itoh
    • Yasuhiro ShiraiAki ShirakoHaruo YamasakiKenichi ItoYasuhiro KondoKen HirabayashiAtsushi Itoh
    • E03D1/00
    • E03D5/10E03D3/10E03D11/08E03D11/13E03D2201/40
    • A toilet flushing apparatus for firmly discharging a filth by a small amount of flush water and by a short period of time and still having a flush sound. The toilet flushing apparatus includes a first water supply supplying flush water to a toilet bowl of a toilet main body, a second water supply additionally supplying the flush water, a drain flow path communicated with a downstream side of a water seal portion of the toilet main body, an air sucking mechanism sucking air from the drain flow path, and a control apparatus controlling the first and second water supplies and the air sucking mechanism. The control apparatus produces a siphon operation by operating the air sucking mechanism continuous to operate the first water supply and to open an opening/closing valve through which flush water from the second water supply enters the toilet bowl, after forming a swirl flow inside the toilet bowl and before finishing the siphon operation.
    • 一种马桶冲洗装置,用于通过少量冲洗水并在短时间内牢固地排出污物并仍然具有冲洗声。 所述马桶冲洗装置包括向所述马桶主体的马桶供给冲洗水的第一供水部,另外供给冲洗水的第二供水部,与所述马桶主体的水封部的下游侧连通的排出流路 从排水流路吸入空气的吸气机构,以及控制第一和第二供水和吸气机构的控制装置。 所述控制装置通过连续地操作所述吸气机构来操作所述第一供水并且打开打开/关闭阀的虹吸操作,所述打开/关闭阀在所述马桶中形成漩涡流之后,从所述第二供水进入冲洗水进入所述马桶 在完成虹吸操作之前。
    • 10. 发明授权
    • Magnetic memory cell and magnetic random access memory
    • 磁存储单元和磁性随机存取存储器
    • US08508985B2
    • 2013-08-13
    • US12994621
    • 2009-05-26
    • Kenichi Ito
    • Kenichi Ito
    • G11C11/00
    • H01L27/228G11C11/161G11C11/1675H01L27/224H01L43/08
    • In a magnetic memory which employs applied spin torque magnetization reversal and does not require the switching of the current direction at the time of rewrite, a memory cell includes a stack of a ferromagnetic fixed layer, a nonmagnetic layer, a ferromagnetic recording layer, a nonmagnetic layer, and a ferromagnetic magnetization rotation assist layer. Recording is performed by making the recording layer magnetization direction parallel or antiparallel to the fixed layer magnetization direction. The magnetization directions of the fixed, recording and assist layers are oriented in in-plane directions of the respective magnetic layers, and the magnetization directions of the assist and fixed layers are at 90 degrees. Write current flows from the fixed to the recording layer where the recording layer magnetization direction is rewritten from parallel to antiparallel of the fixed layer magnetization direction and where the recording layer magnetization direction is rewritten from antiparallel to parallel direction.
    • 在采用施加的自旋转矩磁化反转并且在重写时不需要切换电流方向的磁存储器中,存储单元包括铁磁固定层,非磁性层,铁磁记录层,非磁性层 层和铁磁性磁化旋转辅助层。 通过使记录层的磁化方向与固定层的磁化方向平行或反平行来进行记录。 固定,记录和辅助层的磁化方向在各个磁性层的面内方向上取向,辅助层和固定层的磁化方向为90度。 写入电流从固定到记录层的记录层磁化方向从并行重写为固定层磁化方向的反平行,并且记录层磁化方向由反向平行方向重写。