会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明授权
    • Method for fabricating polycrystalline silicon wafer
    • 制造多晶硅晶圆的方法
    • US4561486A
    • 1985-12-31
    • US373039
    • 1982-04-29
    • Yasuhiro MaedaTakashi YokoyamaShinichi Yagihashi
    • Yasuhiro MaedaTakashi YokoyamaShinichi Yagihashi
    • C30B11/00B22D13/00
    • C30B11/008C30B11/00C30B29/06C30B29/605
    • A method of fabricating a polycrystalline silicon wafer, which method includes the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray. The wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold.
    • 一种制造多晶硅晶片的方法,该方法包括通过离心力将硅基材料的熔融液体径向向外流动在转盘机构的晶片形成表面上的步骤,从而在规定的气氛中形成薄的熔融液体层 ,并冷却固化。 用于制造晶片的装置用于利用布置在晶片形成表面处的用于接收过量的硅液体散射的回收托盘和放置在回收托盘上的晶片托盘来执行该方法。 晶片形成表面由在晶片形成机构中流动的冷却剂冷却。 因此,大的晶粒可以从模具的内表面的气氛以自由状态在晶片上生长。
    • 2. 发明授权
    • Apparatus for fabricating polycrystalline silicon wafer
    • 多晶硅晶片制造装置
    • US4519764A
    • 1985-05-28
    • US644548
    • 1984-08-27
    • Yasuhiro MaedaTakashi YokoyamaShinichi Yagihashi
    • Yasuhiro MaedaTakashi YokoyamaShinichi Yagihashi
    • C01B33/02B28B1/54C30B11/00H01L31/04B29C5/04
    • C30B11/008C30B11/00C30B29/06C30B29/605
    • A method of fabricating a polycrystalline silicon wafer, which method advantageously has the steps of radially outwardly flowing molten liquid of silicon base material on the wafer forming surface of a turntable mechanism by means of centrifugal force, thereby forming a thin molten liquid layer in a prescribed atmosphere, and cooling and solidifying the same. An apparatus for fabricating the wafer is used to carry out the method with a recover tray arranged at the wafer forming surface for receiving the excessive silicon liquid scattered, and a wafer tray placed on the recovery tray, and the wafer forming surface is cooled with coolant flowing in the wafer forming mechanism. Thus, large crystalline grains can be grown on the wafer in free states with the atmosphere from the inner surfaces of the casting mold as the conventional method.
    • 一种制造多晶硅晶片的方法,该方法有利地具有通过离心力将硅基材料的熔融液体径向向外流动在转台机构的晶片形成表面上的步骤,从而在规定的条件下形成薄的熔融液体层 气氛,冷却固化相同。 用于制造晶片的装置用于利用布置在晶片形成表面处的用于接收过量硅液体散射的回收托盘和放置在回收托盘上的晶片托盘来执行该方法,并且用冷却剂冷却晶片形成表面 在晶片形成机构中流动。 因此,作为常规方法,可以从铸模的内表面的气氛以自由状态在晶片上生长大晶粒。
    • 3. 发明授权
    • Method of forming polycrystalline silicon layer on semiconductor wafer
    • 在半导体晶片上形成多晶硅层的方法
    • US5167758A
    • 1992-12-01
    • US364558
    • 1989-06-08
    • Yasuhiro MaedaTakashi YokoyamaIchiro HideTakeyuki MatsuyamaKeiji Sawaya
    • Yasuhiro MaedaTakashi YokoyamaIchiro HideTakeyuki MatsuyamaKeiji Sawaya
    • B22D19/08C30B11/00
    • C30B29/06B22D19/08C30B11/00
    • A method of forming a polycrystalline silicon layer on a semiconductor wafer is disclosed having the steps of placing the semiconductor wafers in a predetermined number of recesses formed on a mold body, then creating a mold by securing a mold cover in contact with the front surface of the mold body, rotating the mold by a rotor in the heating inert gas of a melting furnace, maintaining the wafer temperature in the range of 1300.degree. C. to 1350.degree. C., pouring heated melted silicon from an inlet opened at the center of the mold cover into a passage recessed at the center of the mold body, flowing the heated melted silicon radially by centrifugal force to fill the melted silicon in a laminated layer air gap formed between the surface of the wafer placed in the recess and the mold cover, cooling to solidify the melted silicon and obtain a product with the polycrystalline silicon layer formed from the melted silicon on the wafer, and opening the mold cover from the mold body to remove the product from the mold body. Thus, the method can readily form an accumulated layer of the thickness of 100 micron at an extremely high speed with sufficient economy.
    • 公开了一种在半导体晶片上形成多晶硅层的方法,该方法具有以下步骤:将半导体晶片放置在形成在模体上的预定数量的凹槽中,然后通过将模具盖与前表面接触而形成模具 模具体,通过在熔化炉的加热惰性气体中的转子旋转模具,将晶片温度保持在1300℃至1350℃的范围内,从在中心开口的入口浇注加热的熔融硅 模具盖成为在模具主体的中心凹陷的通道,通过离心力使加热的熔融硅径向流动,以将填充在位于凹槽中的晶片表面与模具盖之间的层叠气隙中填充熔融的硅 冷却固化熔融的硅并获得由晶片上的熔融硅形成的多晶硅层的产品,并从模具体上打开模具盖以除去 产品从模具体。 因此,该方法可以以足够的经济性以极高的速度容易地形成厚度为100微米的累积层。
    • 8. 发明授权
    • Parking brake device of vehicle
    • 车辆驻车制动装置
    • US07273136B2
    • 2007-09-25
    • US11009332
    • 2004-12-10
    • Tetsuya GotoKeinosuke IchikawaYasuhiro MaedaHiroyuki Horiuchi
    • Tetsuya GotoKeinosuke IchikawaYasuhiro MaedaHiroyuki Horiuchi
    • F16D65/24B60T13/22
    • B60T13/147B60T13/04B60T13/10
    • A hydraulic parking brake device is selectively switched between a braking state and a non-braking state. A braking force decreases as a pressure in the control oil chamber increases and increases as the pressure in the control oil chamber decreases. The device includes a discharged oil restrictor located in a discharge passage and an accumulator connected to the control oil chamber. The accumulator is capable of releasing hydraulic oil to the control oil chamber when the braking force is greater than that at the time when the parking brake device is switched from the non-braking state to the braking state and the braking force can further be increased during the braking state of the parking brake device. Thus, the parking brake device can gradually brake the vehicle from the running state.
    • 选择性地在制动状态和非制动状态之间切换液压驻车制动装置。 随着控制油室中的压力增加,制动力随着控制油室中的压力的​​减小而减小。 该装置包括位于排放通道中的排放的限油器和连接到控制油室的蓄能器。 当制动力大于驻车制动装置从非制动状态切换到制动状态时,蓄能器能够将液压油释放到控制油室,并且制动力可以进一步增加 驻车制动装置的制动状态。 因此,驻车制动装置能够从行驶状态逐渐制动车辆。
    • 10. 发明授权
    • Storage control system with auxiliary storage and optimized process data
length and gap to reduce track and cylinder switching
    • 存储控制系统具有辅助存储和优化的过程数据长度和间隙,可减少轨道和气缸切换
    • US5678022A
    • 1997-10-14
    • US124192
    • 1993-09-21
    • Yasuhiro Maeda
    • Yasuhiro Maeda
    • G06F3/06G11B20/12G06F13/00G11B5/09
    • G06F3/0601G11B20/1252G06F2003/0697
    • A storage control system with auxiliary storages includes a system information generator which determines an optimum process data length and gap value to minimize switching between cylinders or tracks in reading/writing of data based on device information obtained from a specified auxiliary storage. Based on the determined optimum process data length and gap value, a data area generator secures a data area on the specified auxiliary storage. The system information generator determines the process data length and the gap value so that the process data length is less than the size of a track in the specified auxiliary storage and satisfies either of the following conditions: (a) Size of a track can be divided by the process data length; or (b) Sum of the process data length and the gap value is a value obtainable by multiplying the track size by an integer.
    • 具有辅助存储器的存储控制系统包括系统信息发生器,其基于从指定的辅助存储器获得的设备信息,确定最佳过程数据长度和间隙值,以使数据读/写中的气缸或轨道之间的切换最小化。 基于确定的最佳过程数据长度和间隙值,数据区发生器确保指定辅助存储器上的数据区域。 系统信息发生器确定过程数据长度和间隙值,使得过程数据长度小于指定辅助存储器中的轨道的大小,并且满足以下条件之一:(a)轨道的尺寸可以被划分 通过过程数据长度; 或者(b)过程数据长度和间隙值的和是通过将轨迹大小乘以整数而获得的值。