专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07479596B2 Solar cell and method for manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US07479596B2
公开(公告)日：2009-01-20
申请号：US10799043
申请日：2004-03-11
申请人： Yasuhiro Hashimoto , Takayuki Negami , Takuya Satoh
发明人： Yasuhiro Hashimoto , Takayuki Negami , Takuya Satoh
IPC分类号： H01L31/072 , H01L31/00
CPC分类号： H01L31/0322 , Y02E10/541 , Y02P70/521
摘要： It is an object of the present invention to provide a solar cell, and a method for manufacturing the same, that includes a layer having Zn, Mg, and O, and with which an increase in efficiency can be achieved. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer disposed between the first electrode layer and the second electrode layer, and a layer A disposed between the second electrode layer and the p-type semiconductor layer, the layer A includes Zn, Mg, O, and at least one element M selected from Ca, Sr, Ba, Al, In, and Ga, and photoelectromotive force is generated due to light that is incident from the second electrode layer side.
摘要翻译：本发明的目的是提供一种太阳能电池及其制造方法，其包括具有Zn，Mg和O的层，并且能够实现效率的提高。太阳能电池包括第一电极层，第二电极层，设置在第一电极层和第二电极层之间的p型半导体层，以及设置在第二电极层和p型半导体层之间的层A，层A包括Zn，Mg，O以及选自Ca，Sr，Ba，Al，In和Ga中的至少一种元素M，并且由于从第二电极层侧入射的光产生光电动势。

2. 发明申请

US20060220059A1 Solar cell 审中-公开
标题翻译：太阳能电池
公开(公告)号：US20060220059A1
公开(公告)日：2006-10-05
申请号：US10552126
申请日：2004-04-09
申请人： Takuya Satoh , Takayuki Negami , Yasuhiro Hashimoto
发明人： Takuya Satoh , Takayuki Negami , Yasuhiro Hashimoto
IPC分类号： H01L31/00 , H01L29/732
CPC分类号： H01L31/0749 , H01L31/0322 , Y02E10/541
摘要： A solar cell including a light-absorption layer of a compound semiconductor with a chalcopyrite crystal structure and having excellent characteristics such as conversion efficiency is provided. The solar cell includes a first electrode layer, a second electrode layer, a p-type semiconductor layer interposed between the first electrode layer and the second electrode layer, and an n-type semiconductor layer interposed between the p-type semiconductor layer and the second electrode layer. The p-type semiconductor layer includes a compound semiconductor containing a group Ib element, a group IIIb element and a group VI element and having a chalcopyrite structure. The bandgap of the p-type semiconductor layer increases from the n-type semiconductor layer side to the first electrode layer side monotonically. The bandgap of the p-type semiconductor layer on the main surface at the n-type semiconductor layer side is at least 1.08 eV, and the bandgap of the p-type semiconductor layer on the main surface at the first electrode layer side is at least 1.17 eV. In the p-type semiconductor layer, a first region at the n-type semiconductor layer side and a second region at the first electrode layer side are different from each other in bandgap increase rate in a direction of thickness of the p-type semiconductor layer.
摘要翻译：提供一种太阳能电池，其包括具有黄铜矿晶体结构的化合物半导体的光吸收层，并且具有优异的特性如转换效率。太阳能电池包括第一电极层，第二电极层，介于第一电极层和第二电极层之间的p型半导体层，以及插入在p型半导体层和第二电极层之间的n型半导体层电极层。 p型半导体层包括含有Ib族元素，IIIb族元素和VI族元素并具有黄铜矿结构的化合物半导体。 p型半导体层的带隙从n型半导体层侧单调增加到第一电极层侧。 n型半导体层侧的主面上的p型半导体层的带隙为1.08eV以上，第一电极层侧的主面上的p型半导体层的带隙为至少 1.17 eV 在p型半导体层中，在p型半导体层的厚度方向上的n型半导体层侧的第一区域和第一电极层侧的第二区域的带隙增加率彼此不同。

3. 发明授权

US06441301B1 Solar cell and method of manufacturing the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US06441301B1
公开(公告)日：2002-08-27
申请号：US09804521
申请日：2001-03-12
申请人： Takuya Satoh , Takayuki Negami , Shigeo Hayashi , Yasuhiro Hashimoto , Shinichi Shimakawa
发明人： Takuya Satoh , Takayuki Negami , Shigeo Hayashi , Yasuhiro Hashimoto , Shinichi Shimakawa
IPC分类号： H01L3106
CPC分类号： H01L31/0392 , H01L31/0322 , H01L31/03925 , H01L31/03926 , Y02E10/541 , Y02P70/521
摘要： A solar cell with good characteristics and high reliability is provided that includes a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb. A method of manufacturing the same also is provided. The solar cell includes a conductive base, a first insulating layer formed on one principal plane of the base, a second insulating layer formed on a second principal plane of the base, and a light-absorption layer disposed above the first insulating layer. The light-absorption layer is formed of a semiconductor comprising at least one element from each of groups Ib, IIIb, and VIb.
摘要翻译：提供了具有良好特性和高可靠性的太阳能电池，其包括包含来自组Ib，IIIb和VIb中的每一个的至少一种元素的半导体。还提供了一种制造该方法的方法。太阳能电池包括导电基体，形成在基底的一个主平面上的第一绝缘层，形成在基底的第二主平面上的第二绝缘层和设置在第一绝缘层上方的光吸收层。光吸收层由包含Ib，IIIb和VIb族中的至少一种元素的半导体形成。

4. 发明申请

US20060261383A1 Compound semiconductor film, solar cell, and methods for producing those 审中-公开
标题翻译：化合物半导体膜，太阳能电池及其制造方法
公开(公告)号：US20060261383A1
公开(公告)日：2006-11-23
申请号：US10560801
申请日：2004-11-30
申请人： Yasuhiro Hashimoto , Takuya Satoh , Takayuki Negami
发明人： Yasuhiro Hashimoto , Takuya Satoh , Takayuki Negami
IPC分类号： H01L29/80
CPC分类号： H01L31/02966 , H01L31/0322 , H01L31/0749 , H01L31/1832 , Y02E10/541 , Y02P70/521
摘要： A compound semiconductor film is formed with a compound containing: A. at least one element selected from zinc, tin, cadmium, indium, and gallium; B. at least one element selected from oxygen and sulfur; and C. an element of Group IIa. A solar cell is configured to include: a substrate (11); a conductive layer (12) formed on the substrate (11); a light-absorption layer (13) that is formed on the conductive layer (12) with a compound semiconductor containing an element of Group Ib, an element of Group IIIa, and an element of Group VIa; the above-described compound semiconductor film (14) formed on the light-absorption layer (13); and a transparent conductive layer (16) formed on the compound semiconductor film (14). Such a configuration provides a compound semiconductor film having a low electric resistivity. Further by employing the compound semiconductor film having a low electric resistivity as a buffer layer of a solar cell, the energy conversion efficiency of the solar cell is improved.
摘要翻译：化合物半导体膜由含有：A，选自锌，锡，镉，铟和镓中的至少一种元素的化合物形成; B.选自氧和硫中的至少一种元素; 和C.组IIa的一个要素。太阳能电池被配置为包括：基板（11）; 形成在所述基板（11）上的导电层（12）; 在导电层（12）上形成有含有Ib族元素，IIIa族元素和VIa族元素的化合物半导体的光吸收层（13）; 形成在光吸收层（13）上的上述化合物半导体膜（14）。和形成在化合物半导体膜（14）上的透明导电层（16）。这种结构提供具有低电阻率的化合物半导体膜。此外，通过采用具有低电阻率的化合物半导体膜作为太阳能电池的缓冲层，能够提高太阳能电池的能量转换效率。

5. 发明申请

US20050056863A1 Semiconductor film, method for manufacturing the semiconductor film, solar cell using the semiconductor film and method for manufacturing the solar cell 审中-公开
标题翻译：半导体膜，半导体膜的制造方法，使用该半导体膜的太阳能电池及太阳能电池的制造方法
公开(公告)号：US20050056863A1
公开(公告)日：2005-03-17
申请号：US10942682
申请日：2004-09-15
申请人： Takayuki Negami , Takuya Satoh , Yasuhiro Hashimoto
发明人： Takayuki Negami , Takuya Satoh , Yasuhiro Hashimoto
IPC分类号： G02B15/14 , H01L29/732 , H01L31/00 , H01L31/0264 , H01L31/0288 , H01L31/032 , H01L31/0328 , H01L31/0336 , H01L31/042 , H01L31/072 , H01L31/109 , H01L31/18
CPC分类号： H01L31/0323 , Y02E10/541 , Y02P70/521
摘要： A semiconductor film has a composition in which a Group Ia element and a Group Vb element are added to a compound semiconductor with a chalcopyrite structure containing a Group Ib element, a Group IIIb element and a Group VIb element. This allows the provision of a semiconductor film whose carrier density can be controlled effectively. A solar cell of the present invention includes: a substrate and the semiconductor film of the present invention that is provided as a light-absorption layer on the substrate. With this configuration, a light-absorption layer whose carrier density can be controlled effectively can be provided, so that a solar cell having a high energy conversion efficiency can be provided.
摘要翻译：半导体膜具有将Ia族元素和Vb族元素添加到具有含有Ib族元素，IIIb族元素和VIb族元素的黄铜矿结构的化合物半导体中的组成。这允许提供可以有效地控制其载流子密度的半导体膜。本发明的太阳能电池包括：基板和在基板上设置为光吸收层的本发明的半导体膜。利用这种结构，能够有效地控制载流子密度的光吸收层，能够提供具有高能量转换效率的太阳能电池。

6. 发明授权

US06534704B2 Solar cell 有权
标题翻译：太阳能电池
公开(公告)号：US06534704B2
公开(公告)日：2003-03-18
申请号：US09972123
申请日：2001-10-05
申请人： Yasuhiro Hashimoto , Takayuki Negami , Shigeo Hayashi , Takuya Satoh
发明人： Yasuhiro Hashimoto , Takayuki Negami , Shigeo Hayashi , Takuya Satoh
IPC分类号： H01L31072
CPC分类号： H01L31/0749 , H01L31/032 , H01L31/1836 , Y02E10/541
摘要： A solar cell includes a first semiconductor layer that is p-type, and a second semiconductor layer that is n-type formed over the first semiconductor layer. The solar cell includes a layer A made of a semiconductor different from the first semiconductor layer and the second semiconductor layer or an insulator between the first semiconductor layer and the second semiconductor layer. The band gap Eg1 of the first semiconductor layer and the band gap Eg2 of the second semiconductor layer satisfy the relationship Eg1
摘要翻译：太阳能电池包括p型的第一半导体层和在第一半导体层上形成为n型的第二半导体层。太阳能电池包括由不同于第一半导体层和第二半导体层的半导体或第一半导体层和第二半导体层之间的绝缘体制成的层A。第一半导体层的带隙Eg1和第二半导体层的带隙Eg2满足关系Eg1

7. 发明申请

US20050253142A1 Solar cell and its manufacturing method 审中-公开
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20050253142A1
公开(公告)日：2005-11-17
申请号：US10517945
申请日：2003-09-10
申请人： Takayuki Negami , Shinichi Shimakawa , Takuya Satoh , Shigeo Hayashi
发明人： Takayuki Negami , Shinichi Shimakawa , Takuya Satoh , Shigeo Hayashi
IPC分类号： H01L31/04 , H01L21/36 , H01L31/0256 , H01L31/042
CPC分类号： H01L31/046 , H01L31/0443 , Y02E10/541 , Y02P70/521
摘要： A solar cell includes a conductive substrate, and an insulating layer, a conducting layer and a semiconductor layer that are disposed on the substrate. A through hole is formed so as to penetrate the insulating layer and the conducting layer, and the through hole is filled with a semiconductor that composes the semiconductor layer. At least one element selected from the elements composing the conductive substrate diffuses into the semiconductor with which the through hole is filled.
摘要翻译：太阳能电池包括设置在基板上的导电基板和绝缘层，导电层和半导体层。形成贯通绝缘层和导电层的贯通孔，并填充构成半导体层的半导体。从构成导电性基板的元件中选择的至少一种元素扩散到填充有通孔的半导体中。

8. 发明申请

US20090014099A1 Rail manufacturing method 有权
标题翻译：轨道制造方法
公开(公告)号：US20090014099A1
公开(公告)日：2009-01-15
申请号：US10585472
申请日：2005-01-07
申请人： Noriaki Onodera , Takuya Satoh , Masaharu Ueda , Kazuo Fujita , Akira Kobayashi
发明人： Noriaki Onodera , Takuya Satoh , Masaharu Ueda , Kazuo Fujita , Akira Kobayashi
IPC分类号： C21D8/00
CPC分类号： C21D9/06 , B21B1/085 , B21B2045/0254 , C21D1/84 , C21D9/04
摘要： A rail manufacturing method is provided, in which a billet is hot-rolled into a rail form and the rail is cooled to ambient temperature. The foot part of the rail can be mechanically restrained to improve the straightness of the rail during at least the period of cooling where the surface temperature is between 800° C. and 400° C. In the subsequent cooling process, at least while the surface temperature of the foot of the rail is between 400° C. and 250° C., the rail is kept in an upright state, and cooled naturally without using insulation or accelerated cooling.
摘要翻译：提供了一种轨道制造方法，其中坯料被热轧成轨道形式并且轨道被冷却至环境温度。轨道的脚部可以被机械地约束，以至少在表面温度在800℃和400℃之间的冷却期间提高轨道的平直度。在随后的冷却过程中，至少在表面导轨脚的温度在400°C到250°C之间，轨道保持直立状态，并自然冷却而不使用绝缘或加速冷却。

9. 发明申请

US20060193084A1 Manufacturing method of head gimbal assembly with solder fillet and head gimbal assembly 有权
标题翻译：具有焊接圆角和头部万向节组件的头部万向节组件的制造方法
公开(公告)号：US20060193084A1
公开(公告)日：2006-08-31
申请号：US11355470
申请日：2006-02-15
申请人： Takuya Satoh , Tatsushi Yoshida , Tatsumi Tsuchiya , Yoshio Uematsu
发明人： Takuya Satoh , Tatsushi Yoshida , Tatsumi Tsuchiya , Yoshio Uematsu
IPC分类号： G11B5/60
CPC分类号： H05K3/3442 , G11B5/4853 , H01L2224/742 , H01L2924/01327 , H05K3/3494 , H05K2201/10727 , H05K2203/0195 , H05K2203/041 , H05K2203/043 , H05K2203/107 , Y02P70/613 , Y10T29/4903 , Y10T29/49211 , H01L2924/00
摘要： Embodiments of the invention relate to making reconnection when a soldered connection fails in a head/slider used in a magnetic disk drive. In one embodiment, a solder mass deposited on a slider pad of a head/slider is separated from a lead pad and a solder ball connection is yet to be made between the slider pad and the lead pad. A shaping tip is heated to a temperature near a melting point of a solder. The shaping tip is moved in parallel with a surface of the slider pad toward the side of the lead pad to soften the solder mass. The solder mass is thereafter irradiated with a laser beam so as to form a solder fillet, thereby making a soldered connection between the lead pad and the slider pad.
摘要翻译：本发明的实施例涉及当在磁盘驱动器中使用的头/滑块中的焊接连接失败时重新连接。在一个实施例中，沉积在头/滑块的滑块上的焊料块与引线焊盘分离，并且在滑块焊盘和引线焊盘之间尚未形成焊球连接。将成型尖端加热至接近焊料熔点的温度。成形尖端与滑块的表面平行地移动到铅焊盘的侧面以软化焊料质量。然后用激光束照射焊料，以形成焊锡圆角，从而在引线焊盘和滑块之间形成焊接连接。

10. 发明授权

US06984158B2 Cooling water pump device for outboard motor 有权
标题翻译：舷外电机冷却水泵装置
公开(公告)号：US06984158B2
公开(公告)日：2006-01-10
申请号：US10781802
申请日：2004-02-20
申请人： Takuya Satoh , Koji Naganuma
发明人： Takuya Satoh , Koji Naganuma
IPC分类号： B63H21/38
CPC分类号： F04C15/0038 , B63H20/28 , F01P3/202 , F01P5/12 , F04C5/00 , F05C2201/046 , F05C2253/20
摘要： A cooling water pump device for drawing cooling water from bottom of a pump case and pumping it toward an engine located above includes: a multiple number of annular seal elements surrounding the driveshaft for keeping the interface between the inner peripheral surface of a resin pump case and a metal sleeve watertight, arranged between the inner peripheral surface of the resin pump case and the metal sleeve, at plural positions vertically apart with respect to the axial direction of the driveshaft.
摘要翻译：一种用于从泵壳的底部抽取冷却水并将其泵送到位于上方的发动机的冷却水泵装置包括：围绕驱动轴的多个环形密封元件，用于保持树脂泵壳体的内周表面和金属套筒水密地配置在树脂泵壳体的内周面与金属套筒之间，在相对于驱动轴的轴向方向上分离的多个位置处。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式