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    • 7. 发明授权
    • Semiconductor device and method of manufacturing the same
    • 半导体装置及其制造方法
    • US07759228B2
    • 2010-07-20
    • US11449687
    • 2006-06-09
    • Naoharu SugiyamaNorio HirashitaTsutomu Tezuka
    • Naoharu SugiyamaNorio HirashitaTsutomu Tezuka
    • H01L21/84H01L21/324H01L21/20
    • H01L29/78687H01L29/045
    • A method of manufacturing a semiconductor device. In the method, a substrate is prepared, which includes a buried oxide film and a SiGe layer formed on the buried oxide film. Then, heat treatment is performed on the substrate at a temperature equal to or lower than a first temperature, to form a protective oxide film on a surface of the SiGe layer. Next, the substrate having the protective oxide film is heated in a non-oxidizing atmosphere to a second temperature higher than the first temperature. Further, heat treatment is performed on the substrate thus heated, in an oxidizing atmosphere at a temperature equal to or higher than the second temperature, to form oxide the SiGe layer, make the SiGe layer thinner and increasing Ge concentration in the SiGe layer, thus forming a SiGe layer having the increased Ge concentration.
    • 一种制造半导体器件的方法。 在该方法中,制备了包括掩埋氧化物膜和形成在掩埋氧化膜上的SiGe层的衬底。 然后,在等于或低于第一温度的温度下在基板上进行热处理,以在SiGe层的表面上形成保护氧化膜。 接着,将具有保护氧化膜的基板在非氧化性气氛中加热至高于第一温度的第二温度。 此外,在等于或高于第二温度的氧化气氛中对如此加热的基板进行热处理,以氧化SiGe层,使SiGe层更薄并增加SiGe层中的Ge浓度,从而形成 具有增加的Ge浓度的SiGe层。