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1. 发明授权

US5011733A Process for coating metallic substrate 失效
标题翻译：金属基材涂层工艺
公开(公告)号：US5011733A
公开(公告)日：1991-04-30
申请号：US296343
申请日：1989-01-09
申请人： Tadayoshi Hiraki , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui , Yasuhiro Fujii
发明人： Tadayoshi Hiraki , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui , Yasuhiro Fujii
IPC分类号： B05D5/00 , B05D1/36 , B05D7/16 , B05D7/24
CPC分类号： B05D7/56 , B05D1/007 , B05D2202/00 , Y10T428/264 , Y10T428/265 , Y10T428/31515 , Y10T428/31522 , Y10T428/31699 , Y10T428/31833 , Y10T428/31928 , Y10T428/31931
摘要： A process for coating a metallic substrate, characterized by applying on a metallic substrate a electrocoating paint, applying thereon a barrier coat comprising a film-forming thermoplastic resin other than a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -75.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.
摘要翻译：一种金属基材的涂布方法，其特征在于，在金属基材上涂布电涂料，在其上涂布包含除改性聚烯烃树脂以外的成膜热塑性树脂的阻隔涂层，并且能够形成具有静态玻璃化转变温度为0℃至-75℃，任选地在所述阻挡涂层上涂覆中间涂层涂料，然后在其上涂覆顶涂层涂料。

2. 发明授权

US4983454A Process for coating metallic substrate 失效
标题翻译：金属基材涂层工艺
公开(公告)号：US4983454A
公开(公告)日：1991-01-08
申请号：US296342
申请日：1989-01-09
申请人： Tadayoshi Hiraki , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui , Yasuhiro Fujii
发明人： Tadayoshi Hiraki , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui , Yasuhiro Fujii
IPC分类号： B05D5/00 , B05D1/36 , B05D7/16 , B05D7/24
CPC分类号： B05D7/56 , B05D1/007 , B05D2202/00 , Y10T428/264 , Y10T428/265 , Y10T428/31515 , Y10T428/31522 , Y10T428/31699 , Y10T428/31833 , Y10T428/31928 , Y10T428/31931
摘要： A process for coating a metallic substrate, characterized by applying on a metallic substrate an electrocoating paint, applying thereon a barrier coat comprising a film-forming thermoplastic resin other than a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -75.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.
摘要翻译：一种金属基材的涂布方法，其特征在于，在金属基材上涂布电涂料，在其上涂布包含除改性聚烯烃树脂以外的成膜热塑性树脂的阻隔涂层，并且能够形成具有静态玻璃化转变温度为0℃至-75℃，任选地在所述阻挡涂层上涂覆中间涂层涂料，然后在其上涂覆顶涂层涂料。

3. 发明授权

US4755434A Process for coating metallic substrate 失效
标题翻译：金属基材涂层工艺
公开(公告)号：US4755434A
公开(公告)日：1988-07-05
申请号：US805382
申请日：1985-12-04
申请人： Yasuhiro Fujii , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Takashi Udagawa , Masafumi Kume , Komaharu Matsui
发明人： Yasuhiro Fujii , Osamu Iwase , Hirosi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Takashi Udagawa , Masafumi Kume , Komaharu Matsui
IPC分类号： B05D7/16 , B32B15/08 , B05D3/02 , C25D13/00
CPC分类号： B05D7/58 , B05D2202/00 , Y10T428/31692
摘要： A process for coating a metallic substrate, characterized by applying on a metallic substrate a cation type electrocoating paint, applying thereon a barrier coat comprising a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -60.degree. C. and a corrosion-preventive pigment, optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.
摘要翻译：一种金属基材的涂布方法，其特征在于，在金属基材上涂布阳离子型电涂料，在其上涂布包含改性聚烯烃树脂的阻隔涂层，并且能够形成静态玻璃化转变温度为0〜 60℃和防腐蚀颜料，任选地在所述阻挡涂层上施加中间涂层涂料，然后在其上涂覆顶涂层涂料。

4. 发明授权

US4755435A Process for coating steel panels 失效
标题翻译：钢板涂装工艺
公开(公告)号：US4755435A
公开(公告)日：1988-07-05
申请号：US796438
申请日：1985-11-08
申请人： Yasuhiro Fujii , Osamu Iwase , Hiroshi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui
发明人： Yasuhiro Fujii , Osamu Iwase , Hiroshi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui
IPC分类号： B05D1/00 , B05D5/00 , B05D7/00 , B05D7/16 , C09D151/06 , B32B15/08 , B05D3/02 , C25D13/00
CPC分类号： B05D7/577 , B05D7/576 , B05D7/586 , C09D151/06 , B05D1/007 , Y10T428/31692
摘要： A process for coating a metallic substrate, characterized by applying on a metallic substrate a cation type electrocoating paint, applying thereon a barrier coat comprising a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -60.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.
摘要翻译：一种金属基材的涂布方法，其特征在于，在金属基材上涂布阳离子型电涂料，在其上涂布包含改性聚烯烃树脂的阻隔涂层，并且能够形成静态玻璃化转变温度为0〜 60℃，任选地在所述阻挡涂层上施加中间涂层涂料，然后在其上涂覆顶涂层涂料。

5. 发明授权

US4756975A Process for coating automotive outer bodies 失效
标题翻译：汽车外壳涂层工艺
公开(公告)号：US4756975A
公开(公告)日：1988-07-12
申请号：US796450
申请日：1985-11-08
申请人： Yasuhiro Fujii , Osamu Iwase , Hiroshi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui
发明人： Yasuhiro Fujii , Osamu Iwase , Hiroshi Oosumimoto , Shinji Sugiura , Ichiro Tabushi , Masafumi Kume , Takashi Udagawa , Komaharu Matsui
IPC分类号： B05D1/00 , B05D7/00 , C09D151/06 , B32B15/08 , B05D3/02 , C25D13/00
CPC分类号： B05D7/54 , B05D7/58 , C09D151/06 , B05D1/007 , Y10T428/31692
摘要： A process for coating automotive bodies which are composed of metallic members and plastic members, said process comprising assembling metallic members and plastic members into automotive outer bodies, applying a cation type electrocoating to the metallic members either before or after the assembling, applying onto the surfaces of the two types of members including the electrocoated surfaces of the assembled body a barrier coat comprising a modified polyolefin resin and capable of forming a barrier coat film having a static glass transition temperature of 0.degree. to -60.degree. C., optionally applying on said barrier coat an intermediate coating paint and then applying thereon a top coating paint.
摘要翻译：一种用于涂覆由金属构件和塑料构件构成的汽车车身的方法，所述方法包括将金属构件和塑料构件组装到汽车外壳体中，在组装之前或之后将阳离子型电泳涂覆到金属构件上，包括组装体的电涂表面的两种类型的构件，包含改性聚烯烃树脂的阻隔涂层，并且能够形成静态玻璃化转变温度为0至-60℃的阻挡涂层膜，任选地施加在所述阻隔涂层中间涂层涂料，然后在其上涂覆顶涂层涂料。

6. 发明授权

US08222674B2 Semiconductor device having a group-III nitride superlattice layer on a silicon substrate 失效
标题翻译：在硅衬底上具有III族氮化物超晶格层的半导体器件
公开(公告)号：US08222674B2
公开(公告)日：2012-07-17
申请号：US13236384
申请日：2011-09-19
申请人： Tadashi Ohachi , Takashi Udagawa
发明人： Tadashi Ohachi , Takashi Udagawa
IPC分类号： H01L31/0328 , H01L31/0336 , H01L33/00
CPC分类号： H01L33/007 , B82Y20/00 , C30B29/36 , C30B29/40 , C30B29/403 , C30B29/68 , H01L21/02381 , H01L21/02433 , H01L21/02447 , H01L21/02516 , H01L21/02538 , H01L21/0254 , H01L21/0262 , H01L33/04 , H01L33/12 , H01L2924/0002 , H01S5/021 , H01S5/32341 , H01S5/34333 , H01L2924/00
摘要： Provided is a semiconductor device containing a silicon single crystal substrate 101, a silicon carbide layer 102 provided on a surface of the substrate, a Group III nitride semiconductor junction layer 103 provided in contact with the silicon carbide layer, and a superlattice-structured layer 104 constituted by Group III nitride semiconductors on the Group III nitride semiconductor junction layer. In this semiconductor device, the silicon carbide layer is a layer of a cubic system whose lattice constant exceeds 0.436 nm and is not more than 0.460 nm and which has a nonstoichiometric composition containing silicon abundantly in terms of composition, and the Group III nitride semiconductor junction layer has a composition of AlxGaYInzN1-αMα (0≦X, Y, Z≦1, X+Y+Z=1, 0≦α
摘要翻译：提供了包含硅单晶衬底101，设置在衬底的表面上的碳化硅层102，与碳化硅层接触设置的III族氮化物半导体结层103和超晶格结构层104的半导体器件由III族氮化物半导体结层上的III族氮化物半导体构成。在该半导体装置中，碳化硅层是晶格常数超过0.436nm且不大于0.460nm的立方晶系层，其组成中含有大量硅的非化学计量组成，III族氮化物半导体结层的组成为Al x Ga y In z N 1-αMα（0＆nlE; X，Y，Z＆nlE; 1，X + Y + Z = 1,0＆lt; nlE;α<1，M是除了氮以外的第V族元素）。

7. 发明申请

US20090267081A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATION THEREOF 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20090267081A1
公开(公告)日：2009-10-29
申请号：US12067407
申请日：2006-09-12
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L29/12 , H01L21/20
CPC分类号： H01L29/1608 , H01L21/02381 , H01L21/02433 , H01L21/02458 , H01L21/02502 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/16 , Y10S438/933
摘要： A semiconductor device includes a substrate formed of a single crystal. a silicon carbide layer disposed on a surface of the single crystal substrate and an intermediate layer disposed on a surface of the silicon carbide layer and formed of a Group III nitride semiconductor, wherein the silicon carbide layer is formed of a cubic crystal stoichiometrically containing silicon copiously and the surface thereof has a (3×3) reconstruction structure. The semiconductor device is fabricated by a method including a first step of blowing a hydrocarbon gas on the surface of the substrate, thereby inducing adsorption of hydrocarbon thereon, a second step of heating the substrate having adsorbed the hydrocarbon to a temperature exceeding a temperature used for the adsorption of the hydrocarbon while irradiating the surface of the substrate with electrons and consequently giving rise to a silicon carbide layer formed of a cubic crystal stoichiometrically containing silicon copiously and provided with a surface having a (3×3) reconstruction structure and a third step of supplying a gaseous raw material containing nitrogen and a gaseous raw material containing a Group III element to the surface of the silicon carbide layer and consequently giving rise to the intermediate layer formed of the Group III nitride semiconductor.
摘要翻译：半导体器件包括由单晶形成的衬底。设置在单晶衬底的表面上的碳化硅层和设置在碳化硅层的表面上并由III族氮化物半导体形成的中间层，其中碳化硅层由含有大量化学计量的硅的立方晶体形成其表面具有（3×3）重构结构。该半导体器件通过包括在基底表面吹入烃气体从而诱导其上的烃吸附的第一步骤的方法制造，第二步是将吸附有烃的基底加热到超过用于在用电子照射衬底表面的同时吸附碳氢化合物，并且因此产生由具有（3×3）重构结构的表面形成的具有化学计量含硅的立方晶体的碳化硅层，并且提供第三步骤将含有氮的气态原料和含有III族元素的气态原料输送到碳化硅层的表面，由此产生由III族氮化物半导体形成的中间层。

8. 发明申请

US20090127571A1 METHOD FOR FABRICATING SEMICONDUCTOR LAYER AND LIGHT-EMITTING DIODE 失效
标题翻译：制备半导体层和发光二极管的方法
公开(公告)号：US20090127571A1
公开(公告)日：2009-05-21
申请号：US12065363
申请日：2006-08-30
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01L21/20 , H01L33/00
CPC分类号： H01L21/0262 , C30B23/02 , C30B23/025 , C30B29/403 , C30B29/406 , H01L21/02381 , H01L21/02447 , H01L21/02461 , H01L21/0254 , H01L33/005 , H01L33/007
摘要： A semiconductor layer containing defects only in a small density, possessing good quality and exhibiting a large ionic bonding property as to GaN, for example, is formed on a semiconductor layer, such as a silicon carbide layer, which is made of a material possessing a small ionicity and exhibiting a strong covalent bonding property. A method for forming a semiconductor layer includes forming on the surface of a first semiconductor layer 102 possessing a first ionicity a second semiconductor layer 103 possessing a second ionicity larger than the first ionicity. The second semiconductor layer 103 is formed while irradiating the surface of the first semiconductor layer existing on the side for forming the second semiconductor layer with electrons in a vacuum.
摘要翻译：在诸如碳化硅层的半导体层上形成包含例如碳化硅层的半导体层，该半导体层包含仅具有小密度的缺陷，具有优良质量并且表现出与GaN类相比具有大的离子键合性能的半导体层，该半导体层由具有表现出强的共价键合性。形成半导体层的方法包括在具有第一离子性的第一半导体层102的表面上形成具有大于第一离子性的第二离子性的第二半导体层103。在真空中用电子照射存在于用于形成第二半导体层的一侧上的第一半导体层的表面，形成第二半导体层103。

9. 发明授权

US07479731B2 Multicolor light-emitting lamp and light source 失效
标题翻译：多色发光灯和光源
公开(公告)号：US07479731B2
公开(公告)日：2009-01-20
申请号：US10486985
申请日：2002-08-16
申请人： Takashi Udagawa
发明人： Takashi Udagawa
IPC分类号： H01J1/62 , H01J63/04
CPC分类号： H01L33/30 , H01L25/0753 , H01L2224/48091 , H01L2224/48464 , H01L2224/73265 , H01L2924/00014
摘要： The present invention provides a technique for fabricating a multicolor light-emitting lamp by using a blue LED having a structure capable of avoiding cumbersome bonding. In particular, the present invention provides a technique for fabricating a multicolor light-emitting lamp by using a hetero-junction type GaP-base LED capable of emitting high intensity green light in combination. Also, for example, in fabricating a multicolor light-emitting lamp from the blue LED and the yellow LED, the present invention provides a technique for fabricating a multicolor light-emitting lamp from a blue LED requiring no cumbersome bonding and a hetero-junction type GaAs1-ZPZ-base yellow LED of emitting light having high light emission intensity.
摘要翻译：本发明提供一种通过使用具有能够避免麻烦的结合的结构的蓝色LED来制造多色发光灯的技术。特别地，本发明提供了一种通过组合使用能够发射高强度绿光的异质结型GaP基LED来制造多色发光灯的技术。此外，例如，在从蓝色LED和黄色LED制造多色发光灯的同时，本发明提供了一种从不需要繁琐的接合的蓝色LED制造多色发光灯和异质结型的技术具有高发光强度的发光的GaAs1-ZPZ基黄色LED。

10. 发明申请

US20080268562A1 COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE AND PRODUCTION METHOD THEREOF 失效
标题翻译：化合物半导体发光器件及其制造方法
公开(公告)号：US20080268562A1
公开(公告)日：2008-10-30
申请号：US12121461
申请日：2008-05-15
申请人： Ryouichi TAKEUCHI , Wataru Nabekura , Takashi Udagawa
发明人： Ryouichi TAKEUCHI , Wataru Nabekura , Takashi Udagawa
IPC分类号： H01L21/00
CPC分类号： H01L33/30 , H01L33/0079 , H01L2224/05568 , H01L2224/05573 , H01L2224/05624 , H01L2224/05644 , H01L2224/05666 , H01L2224/05669 , H01L2224/13 , H01L2224/48091 , H01L2224/49107 , H01L2924/00014
摘要： A pn-junction compound semiconductor light-emitting device is provided, which comprises a stacked structure including a light-emitting layer composed of an n-type or a p-type aluminum gallium indium phosphide and a light-permeable substrate for supporting the stacked structure, and the stacked structure and the light-permeable substrate being joined together, wherein the stacked structure includes an n-type or a p-type conductor layer, the conductor layer and the substrate are joined together, and the conductor layer is composed of a Group III-V compound semiconductor containing boron.
摘要翻译：提供一种pn结合化合物半导体发光器件，其包括由n型或p型磷化铝镓磷化物构成的发光层和用于支撑层叠结构的透光性基板的层叠结构并且层叠结构和透光性基板接合在一起，其中层叠结构包括n型或p型导体层，导体层和基板接合在一起，并且导体层由含有硼的III-V族化合物半导体。

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