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    • 2. 发明授权
    • Conversion of hexagonal-like BN to cubic-like BN by ion implantation
    • 通过离子注入将六方晶BN转变成立方BN
    • US5885666A
    • 1999-03-23
    • US851801
    • 1997-05-06
    • Gary Lynn DollJoseph Vito Mantese
    • Gary Lynn DollJoseph Vito Mantese
    • C23C14/06C23C14/58C23C14/12C23C14/14H05H1/00
    • C23C14/5833C23C14/0647
    • This invention includes the discovery that poorly crystallized hexagonal-like films of boron nitride with sp.sup.2 bonding can be converted by ion implantation to amorphous, cubic-like, boron nitride with sp.sup.3 bonding. Preferably the sp.sup.2 bonded film has a considerable amount of residual stress. The discovery that sp.sup.2 bonded BN can be converted to sp.sup.3 bonded BN may prove to be a significant advancement in coating technology for the electronics, machine tool, biomedical, and automotive industries. This discovery is important in that growth processes compatible with high volume production can be used to grow sp.sup.2 bonded BN (e.g., sputtering, e-beam evaporation, and CVD), then implantation procedures can be used to subsequently change the film to sp.sup.3 bonding. The amorphous, cubic-like, BN films can be grown on silicon wafers. This technique is also well-suited for metallic and plastic substrates because both the deposition and implantation processes occur at low temperatures. Coatings applied to metallic substrates such as carbonized steels and aluminum alloys must be processed at temperatures typically less than 150 C.
    • 本发明包括以下发现:具有sp2键合的氮化硼的结晶差的六角形膜可以通过离子注入转化成具有sp3键合的无定形立方体氮化硼的发现。 优选地,sp2粘合膜具有相当大量的残余应力。 sp2结合BN可以转化为sp3结合BN的发现可能是电子,机床,生物医学和汽车行业涂层技术的重大进步。 这个发现是重要的,因为与大批量生产兼容的生长工艺可用于生长sp2结合的BN(例如,溅射,电子束蒸发和CVD),然后可以使用注入方法随后将膜改变为sp3键合。 可以在硅晶片上生长无定形的立方体BN膜。 这种技术也非常适用于金属和塑料基板,因为沉积和注入工艺都是在低温下进行的。 施加到金属基底如碳化钢和铝合金的涂层必须在通常低于150℃的温度下进行处理。