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    • 2. 发明申请
    • POLYCRYSTAL SILICON MANUFACTURING APPARATUS
    • 多晶硅制造设备
    • US20120266816A1
    • 2012-10-25
    • US13247481
    • 2011-09-28
    • YUNSUB JUNGKEUNHO KIMYEOKYUN YOONTED KIM
    • YUNSUB JUNGKEUNHO KIMYEOKYUN YOONTED KIM
    • C23C16/24B05C11/00
    • C01B33/027
    • A polycrystal silicon manufacturing apparatus is disclosed. The polycrystal silicon manufacturing apparatus includes a reaction pipe comprising silicon particles provided therein; a flowing-gas supply unit configured to supply flowing gas to the silicon particles provided in the reaction pipe; and a heater configured to supply heat to an internal space of the reaction pipe to generate silicon deposition reaction of the silicon particles; a temperature measurement unit configured to measure a temperature inside the reaction pipe; and a power supply unit configured to increase the temperature inside the reaction pipe, when a temperature value measured by the temperature measurement unit is less than a reference temperature value.
    • 公开了一种多晶硅制造装置。 多晶硅制造装置包括其中设置有硅颗粒的反应管; 流动气体供给单元,被配置为向设置在所述反应管中的所述硅粒子供给流动气体; 以及加热器,其被配置为向所述反应管的内部空间供热,以产生所述硅颗粒的硅沉积反应; 温度测量单元,被配置为测量反应管内的温度; 以及电源单元,被配置为当由温度测量单元测量的温度值小于参考温度值时,增加反应管内的温度。