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1. 发明授权

US08810009B2 Method of fabricating a planar semiconductor nanowire 有权
标题翻译：制造平面半导体纳米线的方法
公开(公告)号：US08810009B2
公开(公告)日：2014-08-19
申请号：US12989558
申请日：2009-04-24
申请人： Xiuling Li , Seth A. Fortuna
发明人： Xiuling Li , Seth A. Fortuna
IPC分类号： H01L29/04 , H01L21/02
CPC分类号： H01L21/02521 , H01L21/0237 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L21/02664 , Y10S977/762 , Y10S977/938
摘要： A composition comprises a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate and at least one planar semiconductor nanowire epitaxially disposed on the substrate, where the nanowire is aligned along a crystallographic direction of the substrate parallel to the crystallographic plane. To fabricate a planar semiconductor nanowire, at least one nanoparticle is provided on a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate. The semiconductor substrate is heated within a first temperature window in a processing unit. Semiconductor precursors are added to the processing unit, and a planar semiconductor nanowire is grown from the nanoparticle on the substrate within a second temperature window. The planar semiconductor nanowire grows in a crystallographic direction of the substrate parallel to the crystallographic plane.
摘要翻译：组合物包括半导体衬底，其具有平行于衬底的表面定向的结晶平面和至少一个外延地设置在衬底上的平面半导体纳米线，其中纳米线沿着平行于晶体平面的衬底的结晶方向排列。为了制造平面半导体纳米线，在半导体衬底上提供至少一个纳米颗粒，该半导体衬底具有平行于衬底的表面取向的结晶平面。半导体衬底在处理单元中的第一温度窗内被加热。将半导体前体添加到处理单元中，并且在第二温度窗内从衬底上的纳米颗粒生长平面半导体纳米线。平面半导体纳米线在与晶体平面平行的衬底的晶体方向上生长。

2. 发明申请

US20110121434A1 METHOD OF FABRICATING A PLANAR SEMICONDUCTOR NANOWIRE 有权
标题翻译：制备平面半导体纳米线的方法
公开(公告)号：US20110121434A1
公开(公告)日：2011-05-26
申请号：US12989558
申请日：2009-04-24
申请人： Xiuling Li , Seth A. Fortuna
发明人： Xiuling Li , Seth A. Fortuna
IPC分类号： H01L29/04 , H01L21/338 , H01L21/36 , B82Y99/00 , B82Y40/00
CPC分类号： H01L21/02521 , H01L21/0237 , H01L21/02395 , H01L21/02433 , H01L21/02463 , H01L21/02546 , H01L21/02576 , H01L21/02603 , H01L21/0262 , H01L21/02645 , H01L21/02653 , H01L21/02664 , Y10S977/762 , Y10S977/938
摘要： A composition comprises a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate and at least one planar semiconductor nanowire epitaxially disposed on the substrate, where the nanowire is aligned along a crystallographic direction of the substrate parallel to the crystallographic plane. To fabricate a planar semiconductor nanowire, at least one nanoparticle is provided on a semiconductor substrate having a crystallographic plane oriented parallel to a surface of the substrate. The semiconductor substrate is heated within a first temperature window in a processing unit. Semi-conductor precursors are added to the processing unit, and a planar semiconductor nanowire is grown from the nanoparticle on the substrate within a second temperature window. The planar semiconductor nanowire grows in a crystallographic direction of the substrate parallel to the crystallographic plane.
摘要翻译：组合物包括半导体衬底，其具有平行于衬底的表面定向的结晶平面和至少一个外延地设置在衬底上的平面半导体纳米线，其中纳米线沿着平行于晶体平面的衬底的结晶方向排列。为了制造平面半导体纳米线，在半导体衬底上提供至少一个纳米颗粒，该半导体衬底具有平行于衬底的表面取向的结晶平面。半导体衬底在处理单元中的第一温度窗内被加热。将半导体前体添加到处理单元中，并且在第二温度窗内从衬底上的纳米颗粒生长平面半导体纳米线。平面半导体纳米线在与晶体平面平行的衬底的晶体方向上生长。

3. 发明申请

US20110263119A1 METHOD OF FORMING NANOSCALE THREE-DIMENSIONAL PATTERNS IN A POROUS MATERIAL 有权
标题翻译：在多孔材料中形成纳米三维图案的方法
公开(公告)号：US20110263119A1
公开(公告)日：2011-10-27
申请号：US13062130
申请日：2009-09-01
申请人： Xiuling Li , David N. Ruzic , Ik Su Chun , Edmond K.C. Chow , Randolph E. Flauta
发明人： Xiuling Li , David N. Ruzic , Ik Su Chun , Edmond K.C. Chow , Randolph E. Flauta
IPC分类号： H01L21/28
CPC分类号： H01L21/3085 , H01L21/30604 , H01L21/76816 , H01L21/7682 , H01L23/291 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/81 , H01L25/0657 , H01L25/18 , H01L2221/1047 , H01L2224/0346 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/131 , H01L2224/16147 , H01L2224/81191 , H01L2224/81801 , H01L2225/06513 , H01L2225/06568 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2224/05552
摘要： A method of forming a nanoscale three-dimensional pattern in a porous semiconductor includes providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film, where the metal pattern has at least one lateral dimension of about 100 nm or less in size. Semiconductor material is removed from below the nanoscale metal pattern to create trenches in the film having a depth-to-width aspect ratio of at least about 10:1, while pores are formed in remaining portions of the film adjacent to the trenches. A three-dimensional pattern having at least one nanoscale dimension is thus formed in a porous semiconductor, which may be porous silicon. The method can be extended to form self-integrated porous low-k dielectric insulators with copper interconnects, and may also facilitate wafer level chip scale packaging integration.
摘要翻译：在多孔半导体中形成纳米尺度三维图案的方法包括提供包含半导体材料并在膜上限定纳米尺度金属图案的膜，其中金属图案具有至少一个尺寸为约100nm或更小的横向尺寸。半导体材料从纳米级金属图案下方去除，以在薄膜中形成具有至少约10:1深度至宽度纵横比的沟槽，同时在邻近沟槽的膜的剩余部分中形成孔。因此，在可以是多孔硅的多孔半导体中形成具有至少一个纳米级尺寸的三维图案。该方法可以扩展到形成具有铜互连的自整合多孔低k介电绝缘体，并且还可以促进晶片级芯片级封装集成。

4. 发明授权

US08980656B2 Method of forming an array of high aspect ratio semiconductor nanostructures 有权
标题翻译：形成高纵横比半导体纳米结构阵列的方法
公开(公告)号：US08980656B2
公开(公告)日：2015-03-17
申请号：US13503123
申请日：2010-10-14
申请人： Xiuling Li , Nicholas X. Fang , Placid M. Ferreira , Winston Chern , Ik Su Chun , Keng Hao Hsu
发明人： Xiuling Li , Nicholas X. Fang , Placid M. Ferreira , Winston Chern , Ik Su Chun , Keng Hao Hsu
IPC分类号： H01L21/00 , H01L21/308 , B82Y10/00 , B82Y40/00 , H01L29/06
CPC分类号： H01L21/3081 , B82Y10/00 , B82Y40/00 , H01L21/3086 , H01L29/0676 , Y10S977/893
摘要： A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.
摘要翻译：用于形成高纵横比半导体纳米结构阵列的新方法需要将包含固体电解质的印模的表面定位成与设置在半导体衬底上的导电膜相对。印模的表面包括与导电膜接触的凹凸图案，以便限定胶片印记界面。在膜 - 印迹界面上产生金属离子通量，并且在导电膜中产生与凹凸特征图案互补的凹陷特征图案。凹陷特征延伸穿过导电膜的整个厚度以暴露下面的半导体衬底并且在衬底上限定导电图案。去除印模，并且从基板选择性地去除导电图案之下的材料。在半导体衬底中形成具有至少约5:1的长宽比纵横比的特征。

5. 发明授权

US06790785B1 Metal-assisted chemical etch porous silicon formation method 有权
标题翻译：金属辅助化学蚀刻多孔硅的形成方法
公开(公告)号：US06790785B1
公开(公告)日：2004-09-14
申请号：US09662682
申请日：2000-09-15
申请人： Xiuling Li , Paul W. Bohn , Jonathan V. Sweedler
发明人： Xiuling Li , Paul W. Bohn , Jonathan V. Sweedler
IPC分类号： H01L21302
CPC分类号： H01L21/0203
摘要： A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a silicon surface. The surface is then etched in a solution including HF and an oxidant for a brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous silicon can be selectively controlled as a function of the type of metal deposited, Si doping type, silicon doping level, and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
摘要翻译：金属如Au，Pt或Au / Pd的薄的不连续层沉积在硅表面上。然后将表面在包含HF和氧化剂的溶液中蚀刻短暂时间，只需几秒至1小时。优选的氧化剂是H 2 O 2。可以选择性地控制多孔硅的形态和发光性质，作为沉积金属，Si掺杂类型，硅掺杂水平和/或蚀刻时间的函数。在本发明的化学蚀刻期间不需要电辅助，其可以在存在或不存在照明的情况下进行。

6. 发明授权

US08486843B2 Method of forming nanoscale three-dimensional patterns in a porous material 有权
标题翻译：在多孔材料中形成纳米级三维图案的方法
公开(公告)号：US08486843B2
公开(公告)日：2013-07-16
申请号：US13062130
申请日：2009-09-01
申请人： Xiuling Li , David N. Ruzic , Ik Su Chun , Edmond K. C. Chow , Randolph E. Flauta
发明人： Xiuling Li , David N. Ruzic , Ik Su Chun , Edmond K. C. Chow , Randolph E. Flauta
IPC分类号： H01L21/311 , H01L21/3213
CPC分类号： H01L21/3085 , H01L21/30604 , H01L21/76816 , H01L21/7682 , H01L23/291 , H01L23/3171 , H01L24/03 , H01L24/05 , H01L24/81 , H01L25/0657 , H01L25/18 , H01L2221/1047 , H01L2224/0346 , H01L2224/0401 , H01L2224/05022 , H01L2224/05073 , H01L2224/05562 , H01L2224/05567 , H01L2224/05573 , H01L2224/131 , H01L2224/16147 , H01L2224/81191 , H01L2224/81801 , H01L2225/06513 , H01L2225/06568 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/01032 , H01L2924/01033 , H01L2924/01072 , H01L2924/01073 , H01L2924/01078 , H01L2924/01079 , H01L2924/014 , H01L2924/10253 , H01L2924/10329 , H01L2924/14 , H01L2224/05552
摘要： A method of forming a nanoscale three-dimensional pattern in a porous semiconductor includes providing a film comprising a semiconductor material and defining a nanoscale metal pattern on the film, where the metal pattern has at least one lateral dimension of about 100 nm or less in size. Semiconductor material is removed from below the nanoscale metal pattern to create trenches in the film having a depth-to-width aspect ratio of at least about 10:1, while pores are formed in remaining portions of the film adjacent to the trenches. A three-dimensional pattern having at least one nanoscale dimension is thus formed in a porous semiconductor, which may be porous silicon. The method can be extended to form self-integrated porous low-k dielectric insulators with copper interconnects, and may also facilitate wafer level chip scale packaging integration.
摘要翻译：在多孔半导体中形成纳米尺度三维图案的方法包括提供包含半导体材料并在膜上限定纳米尺度金属图案的膜，其中金属图案具有至少一个尺寸为约100nm或更小的横向尺寸。半导体材料从纳米级金属图案下方去除，以在薄膜中形成具有至少约10:1深度至宽度纵横比的沟槽，同时在邻近沟槽的膜的剩余部分中形成孔。因此，在可以是多孔硅的多孔半导体中形成具有至少一个纳米级尺寸的三维图案。该方法可以扩展到形成具有铜互连的自整合多孔低k介电绝缘体，并且还可以促进晶片级芯片级封装集成。

7. 发明申请

US20130052762A1 METHOD OF FORMING AN ARRAY OF HIGH ASPECT RATIO SEMICONDUCTOR NANOSTRUCTURES 有权
标题翻译：形成高比例半导体纳米结构阵列的方法
公开(公告)号：US20130052762A1
公开(公告)日：2013-02-28
申请号：US13503123
申请日：2010-10-14
申请人： Xiuling Li , Nicholas X. Fang , Placid M. Ferreira , Winston Chern , Ik Su Chun , Keng Hao Hsu
发明人： Xiuling Li , Nicholas X. Fang , Placid M. Ferreira , Winston Chern , Ik Su Chun , Keng Hao Hsu
IPC分类号： H01L21/20 , H01L33/04
CPC分类号： H01L21/3081 , B82Y10/00 , B82Y40/00 , H01L21/3086 , H01L29/0676 , Y10S977/893
摘要： A new method for forming an array of high aspect ratio semiconductor nanostructures entails positioning a surface of a stamp comprising a solid electrolyte in opposition to a conductive film disposed on a semiconductor substrate. The surface of the stamp includes a pattern of relief features in contact with the conductive film so as to define a film-stamp interface. A flux of metal ions is generated across the film-stamp interface, and a pattern of recessed features complementary to the pattern of relief features is created in the conductive film. The recessed features extend through an entire thickness of the conductive film to expose the underlying semiconductor substrate and define a conductive pattern on the substrate. The stamp is removed, and material immediately below the conductive pattern is selectively removed from the substrate. Features are formed in the semiconductor substrate having a length-to-width aspect ratio of at least about 5:1.
摘要翻译：形成高纵横比半导体纳米结构阵列的新方法需要将包含固体电解质的印模的表面定位成与设置在半导体衬底上的导电膜相对。印模的表面包括与导电膜接触的凹凸图案，以便限定胶片印记界面。在膜 - 印迹界面上产生金属离子通量，并且在导电膜中产生与凹凸特征图案互补的凹陷特征图案。凹陷特征延伸穿过导电膜的整个厚度以暴露下面的半导体衬底并且在衬底上限定导电图案。去除印模，并且从基板选择性地去除导电图案之下的材料。在半导体衬底中形成具有至少约5:1的长宽比纵横比的特征。

8. 外观设计

USD976749S1 Halloween inflatables pumpkin decoration 有权
公开(公告)号：USD976749S1
公开(公告)日：2023-01-31
申请号：US29838236
申请日：2022-05-11
申请人： Xiuling Li
设计人： Xiuling Li

9. 发明授权

US06762134B2 Metal-assisted chemical etch to produce porous group III-V materials 有权
标题翻译：金属辅助化学蚀刻产生多孔III-V族材料
公开(公告)号：US06762134B2
公开(公告)日：2004-07-13
申请号：US09989050
申请日：2001-11-20
申请人： Paul W. Bohn , Xiuling Li , Jonathan V. Sweedler , Ilesanmi Adesida
发明人： Paul W. Bohn , Xiuling Li , Jonathan V. Sweedler , Ilesanmi Adesida
IPC分类号： H01L21302
CPC分类号： H01L21/30612 , H01L21/0332 , H01L21/3081 , H01L33/18 , H01L33/30
摘要： A thin discontinuous layer of metal such as Au, Pt, or Au/Pd is deposited on a Group III-V material surface. The surface is then etched in a solution including HF and an oxidant for a preferably brief period, as little as a couple seconds to one hour. A preferred oxidant is H2O2. Morphology and light emitting properties of porous Group III-V material can be selectively controlled as a function of the type of metal deposited, doping type, doping level, metal thickness, whether emission is collected on or off the metal coated areas and/or etch time. Electrical assistance is unnecessary during the chemical etching of the invention, which may be conducted in the presence or absence of illumination.
摘要翻译：在III-V族材料表面上沉积诸如Au，Pt或Au / Pd之类的金属薄的不连续层。然后将表面蚀刻在包含HF和氧化剂的溶液中，优选短暂的时间，几小时至几小时。优选的氧化剂是H 2 O 2。可以选择性地控制多孔III-V族材料的形态和发光性质，作为金属沉积类型，掺杂类型，掺杂水平，金属厚度，是否在金属涂层区域或/或金属涂层区域上收集发射的函数的函数时间。在本发明的化学蚀刻期间不需要电辅助，其可以在存在或不存在照明的情况下进行。

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