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1. 发明申请

US20130001721A1 MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE 有权
标题翻译：具有相关隧道结构的磁隧道结
公开(公告)号：US20130001721A1
公开(公告)日：2013-01-03
申请号：US13613006
申请日：2012-09-13
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapozhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapozhnikov , Yonghua Chen
IPC分类号： H01L29/82 , H01L21/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译：磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。第一参考层侧具有比第二参考层侧更高的硼浓度。氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。氧化镁隧道势垒层具有晶体结构。非晶铁磁自由层设置在氧化镁隧道势垒层上。

2. 发明申请

US20110006384A1 MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE 有权
标题翻译：具有相关隧道结构的磁隧道结
公开(公告)号：US20110006384A1
公开(公告)日：2011-01-13
申请号：US12501535
申请日：2009-07-13
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapozhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapozhnikov , Yonghua Chen
IPC分类号： H01L29/82 , B05D5/12
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译：磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。第一参考层侧具有比第二参考层侧更高的硼浓度。氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。氧化镁隧道势垒层具有晶体结构。非晶铁磁自由层设置在氧化镁隧道势垒层上。

3. 发明申请

US20120217598A1 MAGNETIC TUNNEL JUNCTION HAVING COHERENT TUNNELING STRUCTURE 有权
标题翻译：具有相关隧道结构的磁隧道结
公开(公告)号：US20120217598A1
公开(公告)日：2012-08-30
申请号：US13465182
申请日：2012-05-07
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
IPC分类号： H01L29/82 , H01L21/8246
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译：磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。第一参考层侧具有比第二参考层侧更高的硼浓度。氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。氧化镁隧道势垒层具有晶体结构。非晶铁磁自由层设置在氧化镁隧道势垒层上。

4. 发明授权

US08513752B2 Magnetic tunnel junction having coherent tunneling structure 有权
标题翻译：具有相干隧道结构的磁隧道结
公开(公告)号：US08513752B2
公开(公告)日：2013-08-20
申请号：US13613006
申请日：2012-09-13
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
IPC分类号： H01L29/82
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译：磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。第一参考层侧具有比第二参考层侧更高的硼浓度。氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。氧化镁隧道势垒层具有晶体结构。非晶铁磁自由层设置在氧化镁隧道势垒层上。

5. 发明授权

US08294228B2 Magnetic tunnel junction having coherent tunneling structure 有权
公开(公告)号：US08294228B2
公开(公告)日：2012-10-23
申请号：US13465182
申请日：2012-05-07
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.

6. 发明授权

US08183653B2 Magnetic tunnel junction having coherent tunneling structure 有权
标题翻译：具有相干隧道结构的磁隧道结
公开(公告)号：US08183653B2
公开(公告)日：2012-05-22
申请号：US12501535
申请日：2009-07-13
申请人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
发明人： Xilin Peng , Konstantin Nikolaev , Taras Pokhil , Victor Sapazhnikov , Yonghua Chen
IPC分类号： H01L29/82 , G11C11/02
CPC分类号： H01L43/08 , B82Y25/00 , B82Y40/00 , H01F10/3204 , H01F10/3254 , H01F10/3295 , H01F41/303 , H01L43/12
摘要： A magnetic tunnel junction includes an amorphous ferromagnetic reference layer having a first reference layer side and an opposing second reference layer side. The first reference layer side has a greater concentration of boron than the second reference layer side. A magnesium oxide tunnel barrier layer is disposed on the second side of the amorphous ferromagnetic reference layer. The magnesium oxide tunnel barrier layer has a crystal structure. An amorphous ferromagnetic free layer is disposed on the magnesium oxide tunnel barrier layer.
摘要翻译：磁性隧道结包括具有第一参考层侧和相对的第二参考层侧的非晶铁磁参考层。第一参考层侧具有比第二参考层侧更高的硼浓度。氧化镁隧道势垒层设置在非晶铁磁参考层的第二侧上。氧化镁隧道势垒层具有晶体结构。非晶铁磁自由层设置在氧化镁隧道势垒层上。

7. 发明申请

US20110006033A1 Magnetic Device Definition with Uniform Biasing Control 有权
标题翻译：具有均匀偏置控制的磁性装置定义
公开(公告)号：US20110006033A1
公开(公告)日：2011-01-13
申请号：US12502180
申请日：2009-07-13
申请人： Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人： Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号： B44C1/22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译：描述制造磁性装置的方法。在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

8. 发明申请

US20100328823A1 MAGNETORESISTIVE READER WITH DEMAGNETIZATION FLUX GUIDE 有权
标题翻译：磁性读取器，带有去磁通道指南
公开(公告)号：US20100328823A1
公开(公告)日：2010-12-30
申请号：US12491838
申请日：2009-06-25
申请人： Yonghua Chen , Jiaoming Qiu , Xilin Peng , Kaizhong Gao
发明人： Yonghua Chen , Jiaoming Qiu , Xilin Peng , Kaizhong Gao
IPC分类号： G11B5/127
CPC分类号： G01R33/098 , G11B5/3912 , G11B5/3916 , G11B5/398 , H01L43/08
摘要： A magnetic reader comprises first and second shields oriented transversely to a media-facing surface, a magnetoresistive stack located between the first and second shields, and a flux guide. The magnetoresistive stack extends from a proximal end oriented toward the media-facing surface to a distal end oriented away from the media-facing surface. The flux guide extends from the first shield toward the second shield, and is spaced from the magnetoresistive stack at the distal end. The flux guide magnetically couples the distal end of the magnetoresistive stack to the first shield.
摘要翻译：磁读取器包括横向于介质表面的第一和第二屏蔽层，位于第一和第二屏蔽之间的磁阻堆叠以及磁通引导件。磁阻堆叠从朝向面向介质的表面的近端延伸到远离面向介质的表面的远端。磁通引导件从第一屏蔽件延伸到第二屏蔽件，并且在远端处与磁阻堆叠件间隔开。磁通引导件将磁阻堆叠的远端磁耦合到第一屏蔽层。

9. 发明申请

US20090274931A1 HARD MAGNET WITH CAP AND SEED LAYERS AND DATA STORAGE DEVICE READ/WRITE HEAD INCORPORATING THE SAME 有权
标题翻译：具有盖和种子层的硬磁体和数据存储装置读/写头相同
公开(公告)号：US20090274931A1
公开(公告)日：2009-11-05
申请号：US12112671
申请日：2008-04-30
申请人： Jiaoming Qiu , Yonghua Chen , Xilin Peng , Shaun McKinlay , Eric W. Singleton , Brian W. Karr
发明人： Jiaoming Qiu , Yonghua Chen , Xilin Peng , Shaun McKinlay , Eric W. Singleton , Brian W. Karr
IPC分类号： G11B5/733 , B05D5/12
CPC分类号： H01F41/22 , G01R33/098 , G11B5/3163 , G11B5/3906 , G11B5/3909 , G11B5/3932 , H01F10/123 , H01F10/14 , H01F10/16 , H01F10/265 , Y10T428/1164
摘要： A method including forming a multilayer structure. The multilayer structure includes a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The multilayer structure also includes an intermediate layer comprising the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The second component is different than the first component. The multilayer structure further includes a cap layer comprising the first component. The method further includes heating the multilayer structure to an annealing temperature to cause a phase transformation of the intermediate layer. Also a hard magnet including a seed layer comprising a first component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The hard magnet also includes a cap layer comprising the first component. The hard magnet further includes an intermediate layer between the seed layer and the cap layer. The intermediate layer includes the first component and a second component selected from the group consisting of a Pt-group metal, Fe, Mn, Ir and Co. The first component is different than the second component. Additionally, a read/write head including the hard magnet.
摘要翻译：一种包括形成多层结构的方法。多层结构包括种子层，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。多层结构还包括包含第一组分和第二组分的中间层，所述第二组分选自由Pt族金属，Fe，Mn，Ir，Co组成的第二成分与第一成分不同。多层结构还包括包含第一部件的盖层。该方法还包括将多层结构加热至退火温度以引起中间层的相变。还有一种包括种子层的硬磁体，其包含选自由Pt族金属，Fe，Mn，Ir和Co组成的组的第一组分。硬磁体还包括包含第一组分的盖层。硬磁体还包括种子层和盖层之间的中间层。中间层包括第一组分和选自Pt族金属，Fe，Mn，Ir和Co的第二组分。第一组分不同于第二组分。另外，包括硬磁体的读/写头。

10. 发明授权

US08318030B2 Magnetic device definition with uniform biasing control 有权
标题翻译：具有均匀偏置控制的磁性装置定义
公开(公告)号：US08318030B2
公开(公告)日：2012-11-27
申请号：US12502180
申请日：2009-07-13
申请人： Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人： Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号： B44C1/22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译：描述制造磁性装置的方法。在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

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