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1. 发明申请

US20130164694A1 RINSE SOLUTION FOR LITHOGRAPHY AND PATTERN FORMATION METHOD EMPLOYING THE SAME 审中-公开
标题翻译：用于使用其的图形和图案形成方法的RINSE解决方案
公开(公告)号：US20130164694A1
公开(公告)日：2013-06-27
申请号：US13812737
申请日：2011-08-09
申请人： Xiaowei Wang , Yuriko Matsuura , Georg Pawlowski
发明人： Xiaowei Wang , Yuriko Matsuura , Georg Pawlowski
IPC分类号： G03F7/40 , G03F7/20
CPC分类号： G03F7/405
摘要： The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve prevention of both the pattern collapse and the melting at the same time. The solution contains water and a particular nitrogen-containing compound having an organic group, such as, alkyl amine or the like. The rinse solution may further contain a nonionic surfactant, if necessary.
摘要翻译：本发明提供了一种用于光刻的冲洗溶液和使用该溶液的图案形成方法。它们可以同时改善模式崩溃和熔化的预防。溶液含有水和具有有机基团的特定含氮化合物，例如烷基胺等。如果需要，漂洗溶液还可以含有非离子表面活性剂。

2. 发明授权

US09298095B2 Rinse solution for lithography and pattern formation method employing the same 有权
标题翻译：用于光刻的冲洗液和使用其的图案形成方法
公开(公告)号：US09298095B2
公开(公告)日：2016-03-29
申请号：US14003840
申请日：2012-03-22
申请人： Xiaowei Wang , Georg Pawlowski , Yuriko Matsuura
发明人： Xiaowei Wang , Georg Pawlowski , Yuriko Matsuura
IPC分类号： G03F7/40 , G03F7/20 , G03F7/00 , H01L21/02
CPC分类号： G03F7/40 , G03F7/0007 , G03F7/2041 , H01L21/0206
摘要： The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.
摘要翻译：本发明提供了一种用于光刻的冲洗溶液和使用该溶液的图案形成方法。它们可以改善图案的塌陷，表面粗糙度和表面缺陷。该溶液至少含有磺酸，具有亚烷基氧基和水的非离子表面活性剂。

3. 发明申请

US20140234783A1 RINSE SOLUTION FOR LITHOGRAPHY AND PATTERN FORMATION METHOD EMPLOYING THE SAME 有权
标题翻译：用于使用其的图形和图案形成方法的RINSE解决方案
公开(公告)号：US20140234783A1
公开(公告)日：2014-08-21
申请号：US14003840
申请日：2012-03-22
申请人： Xiaowei Wang , Georg Pawlowski , Yuriko Matsuura
发明人： Xiaowei Wang , Georg Pawlowski , Yuriko Matsuura
IPC分类号： G03F7/40
CPC分类号： G03F7/40 , G03F7/0007 , G03F7/2041 , H01L21/0206
摘要： The present invention provides a rinse solution for lithography and a pattern formation method using the solution. They can improve the pattern collapse, surface roughness and surface defects. The solution contains at least a sulfonic acid a nonionic surfactant having an alkyleneoxy group and water.
摘要翻译：本发明提供了一种用于光刻的冲洗溶液和使用该溶液的图案形成方法。它们可以改善图案的塌陷，表面粗糙度和表面缺陷。该溶液至少含有磺酸，具有亚烷基氧基和水的非离子表面活性剂。

4. 发明申请

US20110241173A1 RESIST PATTERN FORMATING METHOD 失效
标题翻译：电阻图形化方法
公开(公告)号：US20110241173A1
公开(公告)日：2011-10-06
申请号：US13131739
申请日：2009-11-30
申请人： Wenbing Kang , Xiaowei Wang , Yuriko Matsuura
发明人： Wenbing Kang , Xiaowei Wang , Yuriko Matsuura
IPC分类号： H01L29/06 , G03F7/20
CPC分类号： G03F7/38
摘要： The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.
摘要翻译：本发明提供能够防止形成表面缺陷的图案形成方法。在该方法中，将曝光后的抗蚀剂表面涂覆有酸性膜，然后进行加热处理。该方法适用于采用液浸式光刻法和/或短波长光源（例如ArF准分子激光束）的工艺，以产生非常精细的图案。

5. 发明申请

US20110165523A1 SUBSTRATE TREATING SOLUTION AND METHOD EMPLOYING THE SAME FOR TREATING A RESIST SUBSTRATE 审中-公开
标题翻译：基板处理方法及其使用方法，用于处理耐蚀基板
公开(公告)号：US20110165523A1
公开(公告)日：2011-07-07
申请号：US13063666
申请日：2009-09-14
申请人： Xiaowei Wang , Wenbing Kang , Tomohide Katayama , Yuriko Matsuura , Tohru Koike
发明人： Xiaowei Wang , Wenbing Kang , Tomohide Katayama , Yuriko Matsuura , Tohru Koike
IPC分类号： G03F7/32
CPC分类号： G03F7/422
摘要： The present invention provides a resist substrate treating solution and a method employing the solution for treating a resist substrate. This treating solution enables to remove efficiently resist residues remaining on a surface of the resist substrate after development, and further to miniaturize a resist pattern. The solution is used for treating a resist substrate having a developed photoresist pattern, and comprises a solvent incapable of dissolving the photoresist pattern and a polymer soluble in the solvent. The developed resist substrate is brought into contact with the treating solution, and then washed with a rinse solution such as water to remove efficiently resist residues remaining on the resist substrate surface. The solvent and the polymer are preferably water and a water-soluble polymer, respectively.
摘要翻译：本发明提供一种抗蚀剂基板处理液和使用该抗蚀剂基板处理用溶液的方法。该处理液能够有效地除去显影后残留在抗蚀剂基板的表面上的残留物，进一步使抗蚀剂图案小型化。该溶液用于处理具有显影的光致抗蚀剂图案的抗蚀剂基板，并且包括不能溶解光致抗蚀剂图案的溶剂和可溶于溶剂的聚合物。使显影的抗蚀剂基板与处理溶液接触，然后用诸如水的冲洗溶液洗涤以有效地除去残留在抗蚀剂基板表面上的残留物。溶剂和聚合物分别优选为水和水溶性聚合物。

6. 发明授权

US08618002B2 Resist pattern formating method 失效
标题翻译：抗蚀图案形成方法
公开(公告)号：US08618002B2
公开(公告)日：2013-12-31
申请号：US13131739
申请日：2009-11-30
申请人： Wenbing Kang , Xiaowei Wang , Yuriko Matsuura
发明人： Wenbing Kang , Xiaowei Wang , Yuriko Matsuura
IPC分类号： H01L21/027
CPC分类号： G03F7/38
摘要： The present invention provides a pattern formation method capable of preventing formation of surface defects. In the method, a resist surface after subjected to exposure is coated with an acidic film and then subjected to heating treatment. This method is suitably adopted in a process employing liquid immersion lithography and/or light of short wavelength, such as ArF excimer laser beams, for producing a very fine pattern.
摘要翻译：本发明提供能够防止形成表面缺陷的图案形成方法。在该方法中，将曝光后的抗蚀剂表面涂覆有酸性膜，然后进行加热处理。该方法适用于采用液浸式光刻法和/或短波长光源（例如ArF准分子激光束）的工艺，以产生非常精细的图案。

7. 发明授权

US08268987B2 Reverse transcription primers and methods of design 有权
标题翻译：逆转录引物和设计方法
公开(公告)号：US08268987B2
公开(公告)日：2012-09-18
申请号：US12950179
申请日：2010-11-19
申请人： Robert Setterquist , Xiaohui Wang , Xiaowei Wang
发明人： Robert Setterquist , Xiaohui Wang , Xiaowei Wang
IPC分类号： C12N15/11 , C07H21/04
CPC分类号： C12Q1/6811 , C12N15/1096 , C12Q1/6876 , C12Q2600/16 , C40B40/06 , C40B40/08 , G06F19/22
摘要： The present invention provides novel algorithms for designing oligonucleotides that do not substantially hybridize to a small group of unwanted transcripts, while hybridizing to most other transcripts. Such oligonucleotides are particularly useful as primers for reverse transcription. The invention also provides compositions containing oligonucleotides that do not substantially hybridize to a small group of unwanted transcripts, while hybridizing to most other transcripts.
摘要翻译：本发明提供了用于设计寡核苷酸的新颖算法，所述寡核苷酸与大部分其他转录物杂交，基本上不与少量不想要的转录物杂交。这样的寡核苷酸特别可用作逆转录的引物。本发明还提供了含有寡核苷酸的组合物，其与大部分其他转录物杂交而基本上不与少量不想要的转录物杂交。

8. 发明授权

US09158368B2 Energy-saving device and method for portable terminal 有权
标题翻译：便携式终端节能装置及方法
公开(公告)号：US09158368B2
公开(公告)日：2015-10-13
申请号：US13981462
申请日：2011-08-24
申请人： Xiaowei Wang , Tianci Yin
发明人： Xiaowei Wang , Tianci Yin
IPC分类号： G06F1/32 , H04W52/02
CPC分类号： G06F1/3296 , G06F1/3212 , G06F1/3234 , H04W52/0258 , H04W52/0261 , H04W52/027 , H04W52/0277 , Y02D10/174 , Y02D70/00 , Y02D70/142 , Y02D70/144
摘要： An energy-saving apparatus and method for a portable terminal are disclosed in the present document. The apparatus includes: an electricity meter module, configured to detect battery power consumption parameters under driving of a data acquisition module; the data acquisition module, configured to drive the detection of the electricity meter module, and output the collected battery power consumption parameters to a data analysis module; the data analysis module, configured to estimate power consumptions of all running devices at present in the terminal according to the input battery power consumption parameters, and output a power consumption optimization instruction to a power consumption optimization execution module; and the power consumption optimization execution module, configured to adopt corresponding power consumption optimization approaches according to the input power consumption optimization instruction.
摘要翻译：在本文中公开了一种用于便携式终端的节能装置和方法。该装置包括：电表模块，用于在数据采集模块的驱动下检测电池功耗参数; 所述数据采集模块被配置为驱动所述电表模块的检测，并将所收集的电池功耗参数输出到数据分析模块; 数据分析模块，被配置为根据输入的电池电力消耗参数来估计当前在终端中的所有运行设备的功率消耗，并将功耗优化指令输出到功耗优化执行模块; 和功耗优化执行模块，配置为根据输入功耗优化指令采用相应的功耗优化方法。

9. 发明授权

US08865995B2 Methods for high figure-of-merit in nanostructured thermoelectric materials 有权
标题翻译：纳米结构热电材料中高品质因数的方法
公开(公告)号：US08865995B2
公开(公告)日：2014-10-21
申请号：US11949353
申请日：2007-12-03
申请人： Zhifeng Ren , Bed Poudel , Gang Chen , Yucheng Lan , Dezhi Wang , Qing Hao , Mildred Dresselhaus , Yi Ma , Xiao Yan , Xiaoyuan Chen , Xiaowei Wang , Joshi R. Giri , Bo Yu
发明人： Zhifeng Ren , Bed Poudel , Gang Chen , Yucheng Lan , Dezhi Wang , Qing Hao , Mildred Dresselhaus , Yi Ma , Xiao Yan , Xiaoyuan Chen , Xiaowei Wang , Joshi R. Giri , Bo Yu
IPC分类号： H01L35/34 , H01L35/16 , H01L35/22
CPC分类号： H01L35/20 , H01L35/16 , H01L35/18 , H01L35/22 , H01L35/34
摘要： Thermoelectric materials with high figures of merit, ZT values, are disclosed. In many instances, such materials include nano-sized domains (e.g., nanocrystalline), which are hypothesized to help increase the ZT value of the material (e.g., by increasing phonon scattering due to interfaces at grain boundaries or grain/inclusion boundaries). The ZT value of such materials can be greater than about 1, 1.2, 1.4, 1.5, 1.8, 2 and even higher. Such materials can be manufactured from a thermoelectric starting material by generating nanoparticles therefrom, or mechanically alloyed nanoparticles from elements which can be subsequently consolidated (e.g., via direct current induced hot press) into a new bulk material. Non-limiting examples of starting materials include bismuth, lead, and/or silicon-based materials, which can be alloyed, elemental, and/or doped. Various compositions and methods relating to aspects of nanostructured thermoelectric materials (e.g., modulation doping) are further disclosed.
摘要翻译：公开了具有高品质因数的ZT值的热电材料。在许多情况下，这样的材料包括纳米尺度的结构域（例如，纳米晶体），其被假定为有助于增加材料的ZT值（例如，通过增加由于界面处的晶界或晶粒/夹杂物边界处的声子散射）。这种材料的ZT值可以大于约1.2,1.4,1.5,1.8,2甚至更高。这样的材料可以通过从其中产生纳米颗粒的热电原材料制造，或者可以随后固化（例如，通过直流感应热压机）成为新的散装材料的元件的机械合金纳米颗粒。起始材料的非限制性实例包括可以合金化，元素化和/或掺杂的铋，铅和/或硅基材料。进一步公开了与纳米结构的热电材料的方面有关的各种组成和方法（例如，调制掺杂）。

10. 发明授权

US08809513B2 Reverse transcription primers and methods of design 有权
标题翻译：逆转录引物和设计方法
公开(公告)号：US08809513B2
公开(公告)日：2014-08-19
申请号：US13592278
申请日：2012-08-22
申请人： Xiaowei Wang , Xiaohui Wang , Robert Setterquist
发明人： Xiaowei Wang , Xiaohui Wang , Robert Setterquist
IPC分类号： C07H21/04 , C07H21/02 , C40B40/08 , C40B40/06
CPC分类号： C12Q1/6811 , C12N15/1096 , C12Q1/6876 , C12Q2600/16 , C40B40/06 , C40B40/08 , G06F19/22
摘要： The present invention provides novel algorithms for designing oligonucleotides that do not substantially hybridize to a small group of unwanted transcripts, while hybridizing to most other transcripts. Such oligonucleotides are particularly useful as primers for reverse transcription. The invention also provides compositions containing oligonucleotides that do not substantially hybridize to a small group of unwanted transcripts, while hybridizing to most other transcripts.
摘要翻译：本发明提供了用于设计寡核苷酸的新颖算法，所述寡核苷酸与大部分其他转录物杂交，基本上不与少量不想要的转录物杂交。这样的寡核苷酸特别可用作逆转录的引物。本发明还提供了含有寡核苷酸的组合物，其与大部分其他转录物杂交而基本上不与少量不想要的转录物杂交。

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