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    • 4. 发明授权
    • Laminated thin film disk for longitudinal recording
    • 用于纵向记录的层压薄膜盘
    • US6077586A
    • 2000-06-20
    • US892724
    • 1997-07-15
    • Xiaoping BianMary Frances DoernerMohammad Taghi Mirzamaani
    • Xiaoping BianMary Frances DoernerMohammad Taghi Mirzamaani
    • G11B5/64G11B5/65G11B5/66G11B5/738G11B5/84
    • G11B5/66Y10S428/90Y10T428/265
    • A thin film disk with laminated magnetic layers, for use in a disk drive, is described which exhibits a single switching behavior resulting in a smooth hysteresis loop. This is achieved by depositing a seed layer prior to depositing the Cr or Cr alloy underlayer. The seed layer material is selected to promote a [112] PO in the underlayer and subsequently a [1010] PO in the two or more laminated magnetic layers. The [1010] PO aids in maintaining minimal Hc variations between the magnetic layers. The seed layer can be a B2 type structure material such as NiAl or FeAl or any other material which results in the [112] PO in the underlayer. The underlayer is preferably Cr or a Cr alloy; the magnetic layers are preferably CoPtCr, CoPtCrTa or CoPtCrB. The spacer layer between the magnetic layers may be made from the same material as the underlayer, but may also be different, e.g. an hexagonal crystalline material such as Ru. The disks of the invention can be manufactured in standard high volume sputtering systems by virtue of the fact the magnetic layers have a reduced dependency on substrate temperature.
    • 描述了一种用于磁盘驱动器的具有层叠磁性层的薄膜盘,其具有导致平滑磁滞回线的单一切换行为。 这是通过在沉积Cr或Cr合金底层之前沉积种子层来实现的。 选择种子层材料以促进底层中的[112] PO和随后在两个或更多个层叠磁性层中的[10 + E,ov 1 + EE 0] PO。 [10 + E,ovs 1 + EE 0] PO有助于保持磁层之间的最小Hc变化。 种子层可以是B2型结构材料,例如NiAl或FeAl,或其它材料,其导致底层中的PO。 底层优选为Cr或Cr合金; 磁性层优选为CoPtCr,CoPtCrTa或CoPtCrB。 磁性层之间的间隔层可以由与底层相同的材料制成,但是也可以不同。 六方晶结晶材料如Ru。 由于磁性层对衬底温度的依赖性降低,本发明的磁盘可以用标准的高体积溅射系统制造。
    • 9. 发明授权
    • Thin film disk with onset layer
    • 具有起始层的薄膜盘
    • US6143388A
    • 2000-11-07
    • US976565
    • 1997-11-24
    • Xiaoping BianMary Frances DoernerShanlin DuanJinshan LiMohammad Taghi Mirzamaani
    • Xiaoping BianMary Frances DoernerShanlin DuanJinshan LiMohammad Taghi Mirzamaani
    • G11B5/64G11B5/66G11B5/73
    • G11B5/732G11B5/656G11B5/66G11B5/7325Y10S428/90Y10T428/265
    • A thin film disk and a disk drive using the thin film disk are described. The disk has an onset layer between the underlayer and the boron containing magnetic layer, for example. The onset layer of the invention is useful because the boron containing magnetic layer material resists being deposited with the C-axis in plane. The onset layer material is selected to promote an in-plane C-axis orientation. When a boron containing magnetic layer is deposited on the onset layer the resulting in-plane PO is improved. The preferred onset layer is of hexagonal closed pack structured material which may be magnetic or nonmagnetic. Materials which are usable for the onset layer include a wide range of pure elements and cobalt alloys such as CoCr, CoPtCr, CoPtCrTa and CoCrB. The onset layer is particularly useful in allowing a ferromagnetic cobalt (Co) alloy containing a relatively high chromium and boron content to be deposited on nonmetallic substrates with the C-axis in the plane of disk without the need for negative bias during the sputtering of the underlayer.
    • 描述使用薄膜盘的薄膜盘和磁盘驱动器。 例如,盘在底层和含硼磁性层之间具有起始层。 本发明的起始层是有用的,因为含硼磁性层材料抵抗C平面上的沉积。 选择起始层材料以促进面内C轴取向。 当含硼磁性层沉积在起始层上时,所得到的面内PO得到改善。 优选的起始层是可以是磁性或非磁性的六边形封闭包装结构材料。 可用于起始层的材料包括宽范围的纯元素和钴合金,例如CoCr,CoPtCr,CoPtCrTa和CoCrB。 起始层特别适用于允许含有相对较高的铬和硼含量的铁磁性钴(Co)合金沉积在非金属基体上,其中C轴在盘平面中,而不需要在溅射期间的负偏压 底层