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1. 发明申请

US20110318882A1 METHOD OF RESTRICTING CHIP MOVEMENT UPON BONDING TO RIGID SUBSTRATE USING SPRAY COATABLE ADHESIVE 审中-公开
标题翻译：使用喷涂粘合剂粘合到刚性基板上的芯片运动限制方法
公开(公告)号：US20110318882A1
公开(公告)日：2011-12-29
申请号：US13168219
申请日：2011-06-24
申请人： Xiaoming Wu , Paul Dryer , David Rhine , Anne Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
发明人： Xiaoming Wu , Paul Dryer , David Rhine , Anne Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
IPC分类号： H01L21/50
CPC分类号： B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1645
摘要： A method of bonding a chip to a wafer at precise alignment suitable for fabricating a heater chip in an ink jet printhead is provided. The method includes spray coating an adhesive composition on a surface of a substrate, aligning and tacking at least one chip to the substrate coated with the adhesive composition, exposing the substrate tacked with at least one chip coated with the adhesive composition to radiation and heat, and performing thermal compression bonding. The method uses a spray coatable adhesive composition comprising a thermally activated adhesive and a photoacid generator.
摘要翻译：提供了一种以适合于在喷墨打印头中制造加热器芯片的精确对准将芯片结合到晶片的方法。该方法包括将粘合剂组合物喷涂在基材的表面上，将至少一个芯片对准并固定到涂覆有粘合剂组合物的基材上，将涂覆有至少一个涂有粘合剂组合物的芯片的基材暴露于辐射和加热，并进行热压接。该方法使用包含热活化粘合剂和光致酸产生剂的喷涂可涂层粘合剂组合物。

2. 发明授权

US08785524B2 Spray coatable adhesive for bonding silicon dies to rigid substrates 有权
标题翻译：用于将硅模具粘合到刚性基材上的喷涂可涂层粘合剂
公开(公告)号：US08785524B2
公开(公告)日：2014-07-22
申请号：US13168063
申请日：2011-06-24
申请人： Xiaoming Wu , Paul Dryer , David Rhine , Anna Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
发明人： Xiaoming Wu , Paul Dryer , David Rhine , Anna Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
IPC分类号： C08K5/06 , C08K5/07 , C08L63/02
CPC分类号： B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1645
摘要： A spray coatable adhesive composition used for bonding silicon dies to a rigid substrate, preferable a silicon substrate is disclosed. The adhesive composition includes an epoxy based resin, a thermal acid generator, a photoacid generator and a solvent. The epoxy based resin includes a mixture of a solid bisphenol A epoxy resin and a liquid or semi-liquid hydrogenated bisphenol A epoxy resin at a weight ratio ranging from about 80:20 to about 65:35. The adhesive composition has a low viscosity which allows it to be spray coated on a rigid substrate and form thin film adhesive which allows silicon dies to be bonded with precise placement on the silicon substrate.
摘要翻译：公开了一种用于将硅模具接合到刚性基板的喷涂可涂层粘合剂组合物，优选的是硅衬底。粘合剂组合物包括环氧树脂，热酸发生剂，光致酸产生剂和溶剂。环氧基树脂包括固体双酚A环氧树脂和液体或半液体氢化双酚A环氧树脂的混合物，其重量比为约80:20至约65:35。粘合剂组合物具有低粘度，其允许将其喷涂在刚性基材上并形成薄膜粘合剂，其允许将硅模具精确地放置在硅基材上。

3. 发明申请

US20110319513A1 SPRAY COATABLE ADHESIVE FOR BONDING SILICON DIES TO RIGID SUBSTRATES 有权
标题翻译：用于将硅胶粘结到刚性基材上的喷涂胶粘剂
公开(公告)号：US20110319513A1
公开(公告)日：2011-12-29
申请号：US13168063
申请日：2011-06-24
申请人： Xiaoming Wu , Paul Dryer , David Rhine , Anna Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
发明人： Xiaoming Wu , Paul Dryer , David Rhine , Anna Pearson , Jeanne Marie Saldanha Singh , Richard Wells , Joel Provence
IPC分类号： C09J163/00
CPC分类号： B41J2/1601 , B41J2/1623 , B41J2/1628 , B41J2/1645
摘要： A spray coatable adhesive composition used for bonding silicon dies to a rigid substrate, preferable a silicon substrate is disclosed. The adhesive composition includes an epoxy based resin, a thermal acid generator, a photoacid generator and a solvent. The epoxy based resin includes a mixture of a solid bisphenol A epoxy resin and a liquid or semi-liquid hydrogenated bisphenol A epoxy resin at a weight ratio ranging from about 80:20 to about 65:35. The adhesive composition has a low viscosity which allows it to be spray coated on a rigid substrate and form thin film adhesive which allows silicon dies to be bonded with precise placement on the silicon substrate.
摘要翻译：公开了一种用于将硅模具接合到刚性基板的喷涂可涂层粘合剂组合物，优选的是硅衬底。粘合剂组合物包括环氧树脂，热酸发生剂，光致酸产生剂和溶剂。环氧基树脂包括固体双酚A环氧树脂和液体或半液体氢化双酚A环氧树脂的混合物，其重量比为约80:20至约65:35。粘合剂组合物具有低粘度，其允许将其喷涂在刚性基材上并形成薄膜粘合剂，其允许将硅模具精确地放置在硅基材上。

4. 发明申请

US20130048601A1 Use of Hydrogen-Oxygen Plasma for Forming Hydroxyl Functional Groups on a Polymer Surface 审中-公开
标题翻译：在聚合物表面上使用氢氧等离子体形成羟基官能团
公开(公告)号：US20130048601A1
公开(公告)日：2013-02-28
申请号：US13222120
申请日：2011-08-31
申请人： Paul Dryer , David Bernard , David Rhine , Xiaoming Wu , Jing X. Sun , Gary Williams
发明人： Paul Dryer , David Bernard , David Rhine , Xiaoming Wu , Jing X. Sun , Gary Williams
IPC分类号： B05D3/04 , B44C1/22
CPC分类号： B05D3/144 , B29C65/48 , B29C65/483 , B29C65/8207 , B29C66/028 , B29C66/71 , B29C66/73751 , B29C66/73755 , B29L2031/767 , B41J2/16 , B41J2/1631 , B41J2/1645 , C08J7/12 , C08J2383/02 , B29K2063/00 , B29K2071/00 , B29K2023/12 , B29K2023/06 , B29K2079/08 , B29K2077/00
摘要： A method for improving adhesion between polymeric materials is provided. The method includes treating a surface of a first polymeric material with plasma of oxygen gas and hydrogen-containing gas. The first polymeric material may be a fully cured polymeric material. A second polymeric material may then be deposited on the plasma treated surface of the first polymeric material. The second polymeric material may be an uncured polymeric material. This plasma treatment may be used in improving the adhesion between polymeric components of an inkjet printer. It provides good adhesion between the polymeric components of the inkjet printer even after long exposure to ink.
摘要翻译：提供了一种改善聚合材料之间的粘合性的方法。该方法包括用氧气和含氢气体的等离子体处理第一聚合物材料的表面。第一聚合物材料可以是完全固化的聚合物材料。然后可以将第二聚合物材料沉积在第一聚合物材料的等离子体处理的表面上。第二聚合物材料可以是未固化的聚合物材料。这种等离子体处理可用于改善喷墨打印机的聚合物组分之间的粘合性。即使在长时间暴露于墨水之后，它也提供了喷墨打印机的聚合物组分之间的良好粘附。

5. 发明授权

US06309918B1 Manufacturable GaAs VFET process 失效
标题翻译：可制造的GaAs VFET工艺
公开(公告)号：US06309918B1
公开(公告)日：2001-10-30
申请号：US09157430
申请日：1998-09-21
申请人： Jenn-Hwa Huang , Benjamin W. Gable , Kurt Eisenbeiser , David Rhine
发明人： Jenn-Hwa Huang , Benjamin W. Gable , Kurt Eisenbeiser , David Rhine
IPC分类号： H01L21338
CPC分类号： H01L29/66856 , H01L29/8122 , Y10S438/945
摘要： A manufacturable GaAs VFET process includes providing a doped GaAs substrate with a lightly doped first epitaxial layer thereon and a heavily doped second epitaxial layer positioned on the first epitaxial layer. A temperature tolerant conductive layer is positioned on the second epitaxial layer and patterned to define a plurality of elongated, spaced apart source areas. Using the patterned conductive layer, a plurality of gate trenches are etched into the first epitaxial layer adjacent the source areas. The bottoms of the gate trenches are implanted and activated to form gate areas. A gate contact is deposited in communication with the implanted gate areas, a source contact is deposited in communication with the patterned conductive layer overlying the source areas, and a drain contact is deposited on the rear surface of the substrate.
摘要翻译：可制造的GaAs VFET工艺包括在其上提供掺杂的GaAs衬底和其上的轻掺杂的第一外延层和位于第一外延层上的重掺杂的第二外延层。耐温导电层定位在第二外延层上并且被图案化以限定多个细长的间隔开的源极区域。使用图案化的导电层，多个栅极沟槽被蚀刻到与源极区域相邻的第一外延层中。栅极沟槽的底部被植入和激活以形成栅极区域。栅极接触被沉积成与植入的栅极区域连通，源极接触层沉积成与覆盖在源极区域上的图案化导电层连通，并且漏极接触沉积在衬底的后表面上。

6. 发明申请

US20060189144A1 Multiple layer etch stop and etching method 有权
标题翻译：多层蚀刻停止和蚀刻方法
公开(公告)号：US20060189144A1
公开(公告)日：2006-08-24
申请号：US11063108
申请日：2005-02-22
申请人： John Krawczyk , Andrew McNees , Christopher Money , Girish Patil , David Rhine , Karthik Vaideeswaran
发明人： John Krawczyk , Andrew McNees , Christopher Money , Girish Patil , David Rhine , Karthik Vaideeswaran
IPC分类号： H01L21/30
CPC分类号： H01L21/0332 , B81B2203/0353 , B81C1/00531 , B81C1/00619 , B81C2201/0132 , B81C2201/014 , H01L21/0334 , H01L21/3081 , H01L21/3083
摘要： A process for etching semiconductor substrates using a deep reactive ion etching process to produce through holes or slots (hereinafter “slots”) in the substrates. The process includes applying a first layer to a back side of a substrate as a first etch stop material. The first layer is a relatively soft etch stop material. A second layer is applied to the first layer on the back side of the substrate to provide a composite etch stop layer. The second layer is a relatively hard etch stop material. The substrate is etched from a side opposite the back side of the substrate to provide a slot in the substrate.
摘要翻译：使用深反应离子蚀刻工艺蚀刻半导体衬底以在衬底中产生通孔或槽（以下称为“槽”）的工艺。该方法包括将第一层作为第一蚀刻停止材料施加到衬底的背面。第一层是相对软的蚀刻停止材料。将第二层施加到衬底的背面上的第一层以提供复合蚀刻停止层。第二层是相对硬的蚀刻停止材料。从与衬底的背面相对的一侧蚀刻衬底，以在衬底中提供槽。

7. 发明授权

US06605454B2 Microfluidic devices with monolithic microwave integrated circuits 有权
公开(公告)号：US06605454B2
公开(公告)日：2003-08-12
申请号：US09816512
申请日：2001-03-22
申请人： Barbara Foley Barenburg , Jeremy Burdon , Yuk-Tong Chan , Xunhu Dai , Sean Gallagher , Piotr Grodzinski , Robert Marrero , Vijay Nair , David Rhine , Thomas Smekal
发明人： Barbara Foley Barenburg , Jeremy Burdon , Yuk-Tong Chan , Xunhu Dai , Sean Gallagher , Piotr Grodzinski , Robert Marrero , Vijay Nair , David Rhine , Thomas Smekal
IPC分类号： C12N1300
CPC分类号： H05B6/806 , C12N1/066 , C12N13/00
摘要： A microwave device has a monolithic microwave integrated circuit (MMIC) disposed therein for applying microwave radiation to a microfluidic structure, such as a chamber, defined in the device. The microwave radiation from the MMIC is useful for heating samples introduced into the microfluidic structure and for effecting lysis of cells in the samples. Microfabrication techniques allow the fabrication of MMICs that perform heating and cell lysing of samples having volumes in the microliter to picoliter range.

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