专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07936592B2 Non-volatile memory cell with precessional switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US07936592B2
公开(公告)日：2011-05-03
申请号：US12364589
申请日：2009-02-03
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tan , Brian Seungwhan Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

2. 发明申请

US20110194337A1 Non-Volatile Memory Cell With Precessional Switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US20110194337A1
公开(公告)日：2011-08-11
申请号：US13091372
申请日：2011-04-21
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

3. 发明申请

US20100195380A1 Non-Volatile Memory Cell with Precessional Switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US20100195380A1
公开(公告)日：2010-08-05
申请号：US12364589
申请日：2009-02-03
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar Dimitrov , Wei Tian , Brian Seungwhan Lee
IPC分类号： G11C11/14 , G11C11/416
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

4. 发明授权

US08289759B2 Non-volatile memory cell with precessional switching 有权
标题翻译：具有进动切换的非易失性存储单元
公开(公告)号：US08289759B2
公开(公告)日：2012-10-16
申请号：US13091372
申请日：2011-04-21
申请人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
发明人： Xiaobin Wang , Yong Lu , Haiwen Xi , Yuankai Zheng , Yiran Chen , Harry Hongyue Liu , Dimitar V. Dimitrov , Wei Tian , Brian S. Lee
IPC分类号： G11C11/00
CPC分类号： H01F10/329 , B82Y25/00 , G06F7/588 , G11C11/161 , G11C11/1675 , G11C11/1677 , G11C11/1693 , H01F10/3254 , H01F10/3286
摘要： A method and apparatus for writing data to a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM) memory cell. In some embodiments, a selected resistive state is written to a magnetic tunneling structure by applying a succession of indeterminate write pulses thereto until the selected resistive state is verified.
摘要翻译：一种将数据写入非易失性存储单元的方法和装置，例如自旋转矩传递随机存取存储器（STRAM）存储单元。在一些实施例中，通过将一系列不确定的写入脉冲施加到磁性隧道结构中来将所选择的电阻状态写入到所选择的电阻状态。

5. 发明授权

US08054678B2 Stuck-at defect condition repair for a non-volatile memory cell 失效
标题翻译：对非易失性存储器单元进行卡住缺陷状态修复
公开(公告)号：US08054678B2
公开(公告)日：2011-11-08
申请号：US12900303
申请日：2010-10-07
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

6. 发明授权

US07894250B2 Stuck-at defect condition repair for a non-volatile memory cell 有权
公开(公告)号：US07894250B2
公开(公告)日：2011-02-22
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.

7. 发明申请

US20110019466A1 Stuck-At Defect Condition Repair for a Non-Volatile Memory Cell 失效
标题翻译：阻止非易失性存储器单元的缺陷条件修复
公开(公告)号：US20110019466A1
公开(公告)日：2011-01-27
申请号：US12900303
申请日：2010-10-07
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00 , G11C29/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

8. 发明申请

US20100238721A1 Stuck-At Defect Condition Repair for a Non-Volatile Memory Cell 有权
标题翻译：阻止非易失性存储器单元的缺陷条件修复
公开(公告)号：US20100238721A1
公开(公告)日：2010-09-23
申请号：US12405918
申请日：2009-03-17
申请人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
发明人： Alan Xuguang Wang , Xiaobin Wang , Dimitar V. Dimitrov , Hai Li , Haiwen Xi , Harry Hongyue Liu
IPC分类号： G11C11/00 , G11C29/00
CPC分类号： G11C29/50 , G11C11/1659 , G11C11/1675 , G11C11/1677 , G11C11/1695 , G11C11/1697
摘要： A method and apparatus for repairing a stuck-at defect condition in a non-volatile memory cell, such as a spin-torque transfer random access memory (STRAM). In some embodiments, a resistive sense element has a magnetic tunneling junction (MTJ) and a repair plane located adjacent to the resistive sense element. The repair plane injects a magnetic field in the MTJ to repair a stuck-at defect condition.
摘要翻译：一种用于修复诸如自旋转矩传递随机存取存储器（STRAM）的非易失性存储单元中的卡入缺陷状况的方法和装置。在一些实施例中，电阻感测元件具有磁性隧道结（MTJ）和位于电阻感测元件附近的修复平面。修复平面在MTJ中注入磁场以修复卡住的缺陷状况。

9. 发明授权

US09128821B2 Data updating in non-volatile memory 有权
标题翻译：非易失性存储器中的数据更新
公开(公告)号：US09128821B2
公开(公告)日：2015-09-08
申请号：US12482693
申请日：2009-06-11
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
IPC分类号： G06F13/00 , G06F13/28 , G06F12/02
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0688 , G06F12/0246 , G06F2212/2024 , G06F2212/205 , G06F2212/225 , G06F2212/7202
摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.
摘要翻译：本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

10. 发明申请

US20120147665A1 Predictive Thermal Preconditioning and Timing Control for Non-Volatile Memory Cells 有权
标题翻译：非易失性记忆体的预测热预处理和时序控制
公开(公告)号：US20120147665A1
公开(公告)日：2012-06-14
申请号：US13400515
申请日：2012-02-20
申请人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
发明人： Yiran Chen , Hai Li , Harry Hongyue Liu , Dimitar V. Dimitrov , Alan Xuguang Wang , Xiaobin Wang
IPC分类号： G11C11/16 , G11C7/00
CPC分类号： G11C11/1675 , G11C11/1659
摘要： Method and apparatus for using thermal preconditioning to write data to a non-volatile memory cell. In accordance with some embodiments, a semiconductor memory has an array of non-volatile memory cells, and a control circuit which stores a first write command from a host to write data to said array. A write circuit flows a write current through an unconditioned first selected cell having a first block address associated with the first write command to write the first selected cell to a selected data state, and concurrently passes a thermal preconditioning current through a second selected cell having a second block address associated with the first block address. The write circuit further passes a thermal preconditioning current through a third selected cell having a third block address associated with the second block address in response to receipt by the control circuit of a second write command from the host associated with the second block address.
摘要翻译：使用热预处理将数据写入非易失性存储单元的方法和装置。根据一些实施例，半导体存储器具有非易失性存储器单元的阵列，以及存储来自主机的第一写命令以将数据写入所述阵列的控制电路。写入电路通过具有与第一写入命令相关联的第一块地址的无条件的第一选定单元流动写入电流，以将第一选定单元写入所选择的数据状态，并且同时通过热预处理电流通过具有与第一块地址相关联的第二块地址。响应于控制电路接收到与第二块地址相关联的主机的第二写入命令，写入电路进一步传递热预处理电流通过具有与第二块地址相关联的第三块地址的第三选定单元。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式