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1. 发明授权

US08270204B2 Domain wall movement on magnetic strip tracks 有权
标题翻译：磁条轨道上的畴壁运动
公开(公告)号：US08270204B2
公开(公告)日：2012-09-18
申请号：US12500263
申请日：2009-07-09
申请人： Xiaobin Wang , Haiwen Xi , Yiran Chen , Yuan Yan , Jun Zheng
发明人： Xiaobin Wang , Haiwen Xi , Yiran Chen , Yuan Yan , Jun Zheng
IPC分类号： G11C11/00
CPC分类号： G01R33/1284 , G01R33/1207 , G01R33/1292 , G11C19/0816
摘要： Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.
摘要翻译：磁性移动轨迹或磁条，旋转磁场的应用或通过带自身的旋转可以准确地确定畴壁运动。一个具体实施例是确定磁条中的畴壁的位置的方法。该方法包括对磁条施加旋转磁场，围绕磁条的纵向轴线旋转的磁场，以及在施加磁场之后，确定畴壁向第二位置的位移。

2. 发明申请

US20100090687A1 DOMAIN WALL MOVEMENT ON MAGNETIC STRIP TRACKS 有权
标题翻译：磁畴轨道上的域壁运动
公开(公告)号：US20100090687A1
公开(公告)日：2010-04-15
申请号：US12500263
申请日：2009-07-09
申请人： Xiaobin Wang , Haiwen Xi , Yiran Chen , Yuan Yan , Jun Zheng
发明人： Xiaobin Wang , Haiwen Xi , Yiran Chen , Yuan Yan , Jun Zheng
IPC分类号： G01R33/02
CPC分类号： G01R33/1284 , G01R33/1207 , G01R33/1292 , G11C19/0816
摘要： Magnetic shift tracks or magnetic strips, to which application of a rotating magnetic field or by rotation of the strip itself allows accurate determination of domain wall movement. One particular embodiment is a method of determining a position of a domain wall in a magnetic strip. The method includes applying a rotating magnetic field to the magnetic strip, the magnetic field rotating around a longitudinal axis of the magnetic strip, and after applying the magnetic field, determining a displacement of the domain wall to a second position.
摘要翻译：磁性移动轨迹或磁条，旋转磁场的应用或通过带自身的旋转可以准确地确定畴壁运动。一个具体实施例是确定磁条中的畴壁的位置的方法。该方法包括对磁条施加旋转磁场，围绕磁条的纵向轴线旋转的磁场，以及在施加磁场之后，确定畴壁向第二位置的位移。

3. 发明申请

US20100095052A1 DATA UPDATING IN NON-VOLATILE MEMORY 有权
标题翻译：数据更新在非易失性存储器中
公开(公告)号：US20100095052A1
公开(公告)日：2010-04-15
申请号：US12482693
申请日：2009-06-11
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
IPC分类号： G06F12/00 , G06F12/02
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0688 , G06F12/0246 , G06F2212/2024 , G06F2212/205 , G06F2212/225 , G06F2212/7202
摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.
摘要翻译：本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

4. 发明授权

US09128821B2 Data updating in non-volatile memory 有权
标题翻译：非易失性存储器中的数据更新
公开(公告)号：US09128821B2
公开(公告)日：2015-09-08
申请号：US12482693
申请日：2009-06-11
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
IPC分类号： G06F13/00 , G06F13/28 , G06F12/02
CPC分类号： G06F3/061 , G06F3/0655 , G06F3/0688 , G06F12/0246 , G06F2212/2024 , G06F2212/205 , G06F2212/225 , G06F2212/7202
摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for updating data in a non-volatile memory array. In accordance with some embodiments, a memory block is formed with a plurality of types of memory cell sectors arranged in data pages of a first type and log pages of a second type that can be updated in-place. A first updated sector is written to a first log page while maintaining an outdated sector in an original data page, and overwritten with a second updated sector.
摘要翻译：本发明的各种实施例通常涉及用于更新非易失性存储器阵列中的数据的装置和相关联的方法。根据一些实施例，存储器块形成有布置在第一类型的数据页中的多种类型的存储器单元扇区和可以就地更新的第二类型的日志页。将第一更新的扇区写入第一日志页面，同时保持原始数据页面中的过时扇区，并被第二更新扇区覆盖。

5. 发明申请

US20100091550A1 Voltage Reference Generation with Selectable Dummy Regions 失效
标题翻译：具有可选择的虚拟区域的电压参考生成
公开(公告)号：US20100091550A1
公开(公告)日：2010-04-15
申请号：US12502191
申请日：2009-07-13
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
IPC分类号： G11C11/00 , G11C5/14 , G11C11/14 , G11C7/02
CPC分类号： G11C7/14 , G11C5/147 , G11C11/1673
摘要： Various embodiments of the present invention are generally directed to an apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.
摘要翻译：本发明的各种实施例通常涉及用于产生具有虚拟电阻感测元件区域的参考电压的装置和相关联的方法。对于电阻感测元件的第一虚拟区域获得第一电阻分布，并且获得电阻感测元件的第二虚拟区域的第二电阻分布。来自用户区域的用户电阻感测元件相对于第一和第二电阻分布被分配给第一或第二虚拟区域中的一个的所选择的电阻感测元件。

6. 发明申请

US20100128519A1 NON VOLATILE MEMORY HAVING INCREASED SENSING MARGIN 审中-公开
标题翻译：非挥发性记忆具有增加的感觉尺寸
公开(公告)号：US20100128519A1
公开(公告)日：2010-05-27
申请号：US12500172
申请日：2009-07-09
申请人： Hai Li , Yiran Chen , Xiaobin Wang , Yuan Yan
发明人： Hai Li , Yiran Chen , Xiaobin Wang , Yuan Yan
IPC分类号： G11C11/14 , G11C7/02 , G11C7/06
CPC分类号： G11C11/1673 , G11C11/1659
摘要： A non volatile memory assembly that includes a reference element having: a reference component; and a reference transistor, wherein the reference component is electrically connected to the reference transistor, and the reference transistor controls the passage of current across the reference component; and at least one non volatile memory element having: a non volatile memory cell, having at least a low and a high resistance state; and an output that electrically connects the reference element with the at least one non volatile memory element, wherein the reference transistor and the memory transistor are activated by a reference gate voltage and a memory gate voltage respectively, and the reference gate voltage and the memory gate voltage are not the same.
摘要翻译：一种非易失性存储器组件，其包括具有参考部件的参考元件; 以及参考晶体管，其中所述参考分量电连接到所述参考晶体管，并且所述参考晶体管控制电流通过所述参考分量; 以及至少一个非易失性存储元件，其具有：具有至少低电阻和高电阻状态的非易失性存储单元; 以及输出，其将所述参考元件与所述至少一个非易失性存储元件电连接，其中所述参考晶体管和所述存储晶体管分别由参考栅极电压和存储栅极电压激活，并且所述参考栅极电压和所述存储器栅极电压不一样。

7. 发明授权

US08203862B2 Voltage reference generation with selectable dummy regions 失效
标题翻译：具有可选虚拟区域的电压参考生成
公开(公告)号：US08203862B2
公开(公告)日：2012-06-19
申请号：US12502191
申请日：2009-07-13
申请人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
发明人： Yiran Chen , Hai Li , Wenzhong Zhu , Xiaobin Wang , Yuan Yan , Harry Hongyue Liu
IPC分类号： G11C11/00
CPC分类号： G11C7/14 , G11C5/147 , G11C11/1673
摘要： An apparatus and associated method for generating a reference voltage with dummy resistive sense element regions. A first resistance distribution is obtained for a first dummy region of resistance sense elements and a second resistance distribution is obtained for a second dummy region of resistive sense elements. A user resistive sense element from a user region is assigned to a selected resistive sense element of one of the first or second dummy regions in relation to the first and second resistance distributions.
摘要翻译：一种用于产生具有虚拟电阻感测元件区域的参考电压的装置和相关联的方法。对于电阻感测元件的第一虚拟区域获得第一电阻分布，并且获得电阻感测元件的第二虚拟区域的第二电阻分布。来自用户区域的用户电阻感测元件相对于第一和第二电阻分布被分配给第一或第二虚拟区域中的一个的所选择的电阻感测元件。

8. 发明授权

US08050072B2 Dual stage sensing for non-volatile memory 有权
标题翻译：用于非易失性存储器的双级感测
公开(公告)号：US08050072B2
公开(公告)日：2011-11-01
申请号：US12490493
申请日：2009-06-24
申请人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
发明人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
IPC分类号： G11C5/06
CPC分类号： G11C7/02 , G11C7/06 , G11C11/1673 , G11C11/1693
摘要： A method and apparatus for accessing a non-volatile memory cell. In some embodiments, a memory block provides a plurality of memory cells arranged into rows and columns. A read circuit is configured to read a selected row of the memory block by concurrently applying a control voltage to each memory cell along the selected row and, for each column, using a respective local sense amplifier and a column sense amplifier to successively differentiate a voltage across the associated memory cell in said column to output a programmed content of the row.
摘要翻译：一种用于访问非易失性存储单元的方法和装置。在一些实施例中，存储块提供布置成行和列的多个存储器单元。读取电路被配置为通过同时向沿着所选行的每个存储器单元施加控制电压并且对于每列使用相应的本地读出放大器和列读出放大器来连续地区分电压来读取存储器块的选定行在所述列中的相关联的存储器单元之间输出该行的编程内容。

9. 发明授权

US08537587B2 Dual stage sensing for non-volatile memory 有权
标题翻译：用于非易失性存储器的双级感测
公开(公告)号：US08537587B2
公开(公告)日：2013-09-17
申请号：US13243814
申请日：2011-09-23
申请人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
发明人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
IPC分类号： G11C5/06
CPC分类号： G11C7/02 , G11C7/06 , G11C11/1673 , G11C11/1693
摘要： A method and apparatus for accessing a non-volatile memory cell. In some embodiments, a memory block provides a plurality of memory cells arranged into rows and columns. A read circuit is configured to read a selected row of the memory block by concurrently applying a control voltage to each memory cell along the selected row and, for each column, using a respective local sense amplifier and a column sense amplifier to successively differentiate a voltage across the associated memory cell in said column to output a programmed content of the row.
摘要翻译：一种用于访问非易失性存储单元的方法和装置。在一些实施例中，存储块提供布置成行和列的多个存储器单元。读取电路被配置为通过同时向沿着所选行的每个存储器单元施加控制电压并且对于每列使用相应的本地读出放大器和列读出放大器来连续地区分电压来读取存储器块的选定行在所述列中的相关联的存储器单元之间输出该行的编程内容。

10. 发明申请

US20120014168A1 Dual Stage Sensing for Non-Volatile Memory 有权
标题翻译：非易失性存储器的双级感测
公开(公告)号：US20120014168A1
公开(公告)日：2012-01-19
申请号：US13243814
申请日：2011-09-23
申请人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
发明人： Hai Li , Yiran Chen , Yuan Yan , Brian Lee , Ran Wang
IPC分类号： G11C11/00 , G11C7/06
CPC分类号： G11C7/02 , G11C7/06 , G11C11/1673 , G11C11/1693
摘要： A method and apparatus for accessing a non-volatile memory cell. In some embodiments, a memory block provides a plurality of memory cells arranged into rows and columns. A read circuit is configured to read a selected row of the memory block by concurrently applying a control voltage to each memory cell along the selected row and, for each column, using a respective local sense amplifier and a column sense amplifier to successively differentiate a voltage across the associated memory cell in said column to output a programmed content of the row.
摘要翻译：一种用于访问非易失性存储单元的方法和装置。在一些实施例中，存储块提供布置成行和列的多个存储器单元。读取电路被配置为通过同时向沿着所选行的每个存储器单元施加控制电压并且对于每列使用相应的本地读出放大器和列读出放大器来连续地区分电压来读取存储器块的选定行在所述列中的相关联的存储器单元之间输出该行的编程内容。

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