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1. 发明授权

US07397254B1 Methods for imperfect insulating film electrical thickness/capacitance measurement 失效
标题翻译：绝缘膜电气厚度/电容测量不完美的方法
公开(公告)号：US07397254B1
公开(公告)日：2008-07-08
申请号：US11277053
申请日：2006-03-21
申请人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Quoc-Bao Vu , Thomas G. Miller , Gregory S. Horner
发明人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Quoc-Bao Vu , Thomas G. Miller , Gregory S. Horner
IPC分类号： G01R31/302
CPC分类号： G01R31/2648 , G01R27/26 , G01R31/312
摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.
摘要翻译：提供了确定绝缘膜的电参数的方法。一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。另一种方法包括在绝缘膜上施加电场。由电场引起的绝缘膜上的泄漏可忽略不计。该方法还包括测量样品的表面电位并确定衬底的电位。此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。该方法还包括从纯电压确定电参数。电气参数可以是绝缘膜的电容或电气厚度。

2. 发明授权

US07075318B1 Methods for imperfect insulating film electrical thickness/capacitance measurement 失效
标题翻译：绝缘膜电气厚度/电容测量不完美的方法
公开(公告)号：US07075318B1
公开(公告)日：2006-07-11
申请号：US10754332
申请日：2004-01-09
申请人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
发明人： Xiafang (Michelle) Zhang , Zhiwei (Steve) Xu , Jianou Shi , Bao Vu , Thomas G. Miller , Gregory S. Horner
IPC分类号： G01R31/302 , G01R27/26
CPC分类号： G01R31/2648 , G01R27/26 , G01R31/312
摘要： Methods for determining an electrical parameter of an insulating film are provided. One method includes measuring a surface potential of a leaky insulating film without inducing leakage across the insulating film and determining the electrical parameter from the surface potential. Another method includes applying an electrical field across the insulating film. Leakage across the insulating film caused by the electrical field is negligible. The method also includes measuring a surface potential of the specimen and determining a potential of the substrate. In addition, the method includes determining a pure voltage across the insulating film from the surface potential and the substrate potential. The method further includes determining the electrical parameter from the pure voltage. The electrical parameter may be capacitance or electrical thickness of the insulating film.
摘要翻译：提供了确定绝缘膜的电参数的方法。一种方法包括测量泄漏绝缘膜的表面电位，而不会导致绝缘膜上的泄漏并且从表面电位确定电参数。另一种方法包括在绝缘膜上施加电场。由电场引起的绝缘膜上的泄漏可忽略不计。该方法还包括测量样品的表面电位并确定衬底的电位。此外，该方法包括从表面电位和衬底电位确定绝缘膜两端的纯电压。该方法还包括从纯电压确定电参数。电气参数可以是绝缘膜的电容或电气厚度。

3. 发明授权

US07248062B1 Contactless charge measurement of product wafers and control of corona generation and deposition 有权
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07248062B1
公开(公告)日：2007-07-24
申请号：US10701112
申请日：2003-11-04
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

4. 发明授权

US07538333B1 Contactless charge measurement of product wafers and control of corona generation and deposition 失效
标题翻译：产品晶圆的非接触式电荷测量和电晕发生和沉积的控制
公开(公告)号：US07538333B1
公开(公告)日：2009-05-26
申请号：US11460517
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： H01J37/30 , H01J37/317 , G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems and methods for determining a property of a specimen are provided. The specimen may be a product wafer. The method may include biasing a focused spot on the specimen. The method may also include measuring a parameter of a measurement spot on the specimen. The measurement spot may overlap the focused spot. In addition, the method may include determining the property of the specimen from the measured parameter. Systems and methods for varying the performance of a corona source are also provided. The method may include altering a property of the environment within the corona source. The property may include, but is not limited to, temperature, pressure, humidity, and/or partial pressure of a gas within the corona source.
摘要翻译：提供了用于确定样品性质的系统和方法。样品可以是产品晶片。该方法可以包括将聚焦斑点偏置在样本上。该方法还可以包括测量样品上的测量点的参数。测量点可能与聚焦点重叠。此外，该方法可以包括根据测量的参数确定样品的性质。还提供了用于改变电晕源的性能的系统和方法。该方法可以包括改变电晕源内的环境的属性。该性质可以包括但不限于电晕源内的气体的温度，压力，湿度和/或分压。

5. 发明授权

US07719294B1 Systems configured to perform a non-contact method for determining a property of a specimen 有权
标题翻译：被配置为执行用于确定样本的属性的非接触方法的系统
公开(公告)号：US07719294B1
公开(公告)日：2010-05-18
申请号：US11460505
申请日：2006-07-27
申请人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
发明人： Amin Samsavar , John M. Schmidt , Rainer Schierle , Gregory S. Horner , Thomas G. Miller , Zhiwei Xu , Xiaofeng Hu , Jianou Shi , Sergio Edelstein
IPC分类号： G01R31/26
CPC分类号： G01R31/303 , G01R31/2831 , H01L22/14 , H01L2924/0002 , H01L2924/00
摘要： Systems configured to perform a non-contact method for determining a property of a specimen are provided. One system configured to perform a non-contact method for determining a property of a specimen includes a focused biasing device configured to provide a stimulus to a focused spot on the specimen. The system also includes a sensor configured to measure a parameter of a measurement spot on the specimen. The measurement spot overlaps the focused spot. The system further includes a processor configured to determine the property of the specimen from the parameter.
摘要翻译：提供被配置为执行用于确定样本的属性的非接触方法的系统。被配置为执行用于确定样本的属性的非接触方法的一个系统包括被配置为向所述样本上的聚焦点提供刺激的聚焦偏置装置。该系统还包括被配置为测量样品上的测量点的参数的传感器。测量点与聚焦点重叠。该系统还包括处理器，该处理器被配置为根据该参数确定样本的属性。

6. 发明授权

US07064565B1 Methods and systems for determining an electrical property of an insulating film 失效
标题翻译：用于确定绝缘膜的电性能的方法和系统
公开(公告)号：US07064565B1
公开(公告)日：2006-06-20
申请号：US10699352
申请日：2003-10-31
申请人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
发明人： Zhiwei Xu , Thomas G. Miller , Jianou Shi , Gregory S. Horner
IPC分类号： G01R31/302 , G01R31/26
CPC分类号： G01R31/129 , G01R31/2831
摘要： Methods for determining a surface voltage of an insulating film are provided. One method includes depositing a charge on an upper surface of the insulating film and measuring a current to the wafer during deposition. The method also includes determining the surface voltage of the insulating film from the current. In this manner, the surface voltage is not measured, but is determined from a measured current. Another embodiment may include measuring a second current to the wafer during a high current mode deposition of a charge on the film and determining a second surface voltage of the film from the second current. This method may be repeated until a Q-V sweep is measured. An additional embodiment may include altering a control voltage during deposition of the charge such that a current to the wafer is substantially constant over time and determining charge vs. voltage data for the insulating film.
摘要翻译：提供了确定绝缘膜的表面电压的方法。一种方法包括在绝缘膜的上表面上沉积电荷并在沉积期间测量到晶片的电流。该方法还包括从电流确定绝缘膜的表面电压。以这种方式，不测量表面电压，而是根据测量的电流确定。另一个实施例可以包括在电荷的高电流模式沉积期间测量到晶片的第二电流，并从第二电流确定膜的第二表面电压。可以重复该方法直到测量Q-V扫描。附加实施例可以包括在沉积电荷期间改变控制电压，使得到晶片的电流随时间基本上是恒定的，并且确定绝缘膜的电荷对电压数据。

7. 发明授权

US07358748B1 Methods and systems for determining a property of an insulating film 有权
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07358748B1
公开(公告)日：2008-04-15
申请号：US11291075
申请日：2005-11-30
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01R31/302 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to current leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与电流泄漏和膜厚度有关的理论模型来确定膜的厚度。

8. 发明授权

US07012438B1 Methods and systems for determining a property of an insulating film 失效
标题翻译：用于确定绝缘膜性能的方法和系统
公开(公告)号：US07012438B1
公开(公告)日：2006-03-14
申请号：US10616086
申请日：2003-07-09
申请人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
发明人： Thomas G. Miller , Gregory S. Horner , Amin Samsavar , Zhiwei Xu , Patrick Stevens
IPC分类号： G01R27/08 , G01R27/26 , G01N27/60
CPC分类号： H01L22/12 , G01R31/2831 , H01L2924/0002 , H01L2924/00
摘要： A method for determining a property of an insulating film is provided. The method may include obtaining a charge density measurement of the film, a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and a rate of voltage decay of the film. The method may also include determining the property of the film using the charge density, the surface voltage potential, and the rate of voltage decay. A method for determining a thickness of an insulating film is provided. The method may include depositing a charge on the film, measuring a surface voltage potential of the film relative to a bulk voltage potential of the substrate, and measuring a rate of voltage decay of the film. The method may also include determining a thickness of the film using the rate of voltage decay and a theoretical model relating to leakage and film thickness.
摘要翻译：提供一种用于确定绝缘膜的性质的方法。该方法可以包括获得膜的电荷密度测量，膜相对于衬底的体电压电位的表面电压电势以及膜的电压衰减速率。该方法还可以包括使用电荷密度，表面电压电位和电压衰减速率确定膜的性质。提供一种确定绝缘膜厚度的方法。该方法可以包括在膜上沉积电荷，测量膜相对于衬底的体电压电位的表面电压电位，以及测量膜的电压衰减速率。该方法还可以包括使用电压衰减速率和与泄漏和膜厚度有关的理论模型来确定膜的厚度。

9. 发明授权

US06734696B2 Non-contact hysteresis measurements of insulating films 有权
标题翻译：绝缘膜的非接触磁滞测量
公开(公告)号：US06734696B2
公开(公告)日：2004-05-11
申请号：US10286358
申请日：2002-11-01
申请人： Gregory S. Horner , Thomas G. Miller
发明人： Gregory S. Horner , Thomas G. Miller
IPC分类号： G01R3102
CPC分类号： G01N27/60 , G01N27/61
摘要： Non-contact methods for determining a property of an insulating film are provided. One method includes measuring an amount of hysteresis in the insulating film without contacting the insulating film. The method also includes determining the amount of hysteresis in the insulating film. Computer-implemented methods for data analysis are also provided. One computer-implemented method includes determining a single numeric value representing an amount of hysteresis in an insulating film from electrical characteristics of the insulating film. The electrical characteristics are measured without contacting the insulating film. In addition, systems that include a measurement system and a computer-usable carrier medium are provided. The measurement system is configured to measure an amount of hysteresis in an insulating film without contacting the insulating film. The carrier medium includes program instructions, which are executable on a computer system for determining the amount of hysteresis in the insulating film using measurements from the measurement system.
摘要翻译：提供了用于确定绝缘膜的性质的非接触方法。一种方法包括测量绝缘膜中的滞后量而不接触绝缘膜。该方法还包括确定绝缘膜中的滞后量。还提供了计算机实现的数据分析方法。一种计算机实现的方法包括从绝缘膜的电特性确定表示绝缘膜中的滞后量的单个数值。在不接触绝缘膜的情况下测量电特性。此外，还提供了包括测量系统和计算机可用的载体介质的系统。测量系统被配置为测量绝缘膜中的滞后量而不接触绝缘膜。载体介质包括可在计算机系统上执行的程序指令，用于使用来自测量系统的测量来确定绝缘膜中的滞后量。

10. 发明授权

US5594247A Apparatus and method for depositing charge on a semiconductor wafer 失效
标题翻译：用于在半导体晶片上沉积电荷的装置和方法
公开(公告)号：US5594247A
公开(公告)日：1997-01-14
申请号：US499326
申请日：1995-07-07
申请人： Roger L. Verkuil , Gregory S. Horner , Thomas G. Miller
发明人： Roger L. Verkuil , Gregory S. Horner , Thomas G. Miller
IPC分类号： H01L21/66 , H01T19/04
CPC分类号： H01L22/14 , H01L22/20
摘要： A conductive screen is placed between a corona gun and the surface of a semiconductor wafer. The charge deposited on the wafer by the gun is controlled by a potential applied to the screen. A chuck orients the wafer in close proximity to the screen. A desired charge is applied to the wafer by first applying a surplus of one charge to the wafer and then depositing an opposite polarity charge until the potential of the wafer equals the potential of the screen.
摘要翻译：将导电屏放置在电晕枪和半导体晶片的表面之间。通过枪施加在晶片上的电荷由施加到屏幕的电位来控制。卡盘将晶片定位在靠近屏幕的位置。通过首先向晶片施加剩余的一次电荷，然后沉积相反极性的电荷，直到晶片的电位等于屏幕的电位，将期望的电荷施加到晶片。

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