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1. 发明授权

US08389380B2 Method for making a substrate of the semiconductor on insulator type with an integrated ground plane 有权
标题翻译：一种具有集成接地面的绝缘体半导体衬底的制造方法
公开(公告)号：US08389380B2
公开(公告)日：2013-03-05
申请号：US12678482
申请日：2008-10-10
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/30
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/324 , H01L21/76256 , H01L27/1203 , H01L29/78 , H01L29/78603
摘要： A method for making a semiconductor on insulator (SeOI) type substrate that includes an integrated ground plane under the insulating layer wherein the substrate is intended to be used in making electronic components. This method includes implanting atoms or ions of a metal in at least one portion of a semiconducting receiver substrate, carrying out a heat treatment of the receiver substrate in order to obtain an integrated ground plane on or in at least one portion of that receiver substrate, transferring an active layer stemming from a semiconducting donor substrate onto the receiver substrate, with an insulating layer being inserted in between the donor and receiver substrates to obtain the substrate with an integrated ground plane.
摘要翻译：一种制造绝缘体上半导体（SeOI）型衬底的方法，该衬底包括在绝缘层下方的集成接地面，其中该衬底用于制造电子部件。该方法包括将金属的原子或离子注入到半导体接收器衬底的至少一部分中，对接收器衬底进行热处理，以便在接收器衬底的至少一部分上或其中至少一部分获得集成接地面，将源自半导电施主衬底的有源层转移到接收器衬底上，其中绝缘层插入在施主和接收器衬底之间以获得具有集成接地面的衬底。

2. 发明申请

US20070026650A1 Method of limiting vacancy diffusion in a heterostructure 审中-公开
标题翻译：限制异质结构中空位扩散的方法
公开(公告)号：US20070026650A1
公开(公告)日：2007-02-01
申请号：US11521146
申请日：2006-09-13
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/385
CPC分类号： H01L21/26506 , H01L21/76254
摘要： A method of fabricating a heterostructure comprising at least a first layer of semi-conductor material such as, for example, a silicon-germanium (SiGe) layer on a second layer or a substrate of another material. The material of the second layer may differ from that of the first layer. To prevent elements of the semiconductor material of the first layer from diffusing into the first layer as well as the adjacent layers by a vacancy mechanism, the first layer may be enriched with interstitial defects to limit vacancy diffusion of elements of the first layer.
摘要翻译：一种制造异质结构的方法，其包括至少第一层半导体材料，例如第二层上的硅 - 锗（SiGe）层或另一材料的衬底。第二层的材料可以不同于第一层的材料。为了防止第一层的半导体材料的元件通过空位机构扩散到第一层以及相邻层中，第一层可能富含间隙缺陷以限制第一层的元件的空位扩散。

3. 发明授权

US07632739B2 Fabrication of hybrid substrate with defect trapping zone 有权
标题翻译：具有缺陷捕获区的混合基板的制造
公开(公告)号：US07632739B2
公开(公告)日：2009-12-15
申请号：US11836527
申请日：2007-08-09
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/30 , H01L21/46
CPC分类号： H01L21/76254
摘要： A process for fabricating a hybrid substrate that has a defect trapping zone. The process includes the steps of forming or depositing a first insulator layer on a first substrate of semiconductor material; increasing roughness of the first insulator layer surface; depositing a second insulator layer on the roughened surface of the first insulator to form a trapping zone between the layers; bonding a second substrate onto the second insulator layer by molecular adhesion; and transferring an active layer formed by the implantation of atomic species into one of the substrates. The trapping zone is able to retain gaseous species present at the various interfaces of the hybrid substrate to limit the formation of defects on the surface of the active layer that is transferred.
摘要翻译：一种制造具有缺陷捕获区的混合基板的方法。该方法包括在半导体材料的第一衬底上形成或沉积第一绝缘体层的步骤; 增加第一绝缘体层表面的粗糙度; 在所述第一绝缘体的所述粗糙化表面上沉积第二绝缘体层以在所述层之间形成捕获区; 通过分子粘附将第二衬底粘合到第二绝缘体层上; 以及将通过将原子物质的注入形成的有源层转移到基板之一中。捕集区能够保留存在于混合基板的各个界面处的气体物质，以限制在所传送的有源层的表面上的缺陷的形成。

4. 发明申请

US20070210307A1 Methods of forming a layer of material on a substrate and structures formed therefrom 有权
标题翻译：在基材上形成材料层的方法和由其形成的结构
公开(公告)号：US20070210307A1
公开(公告)日：2007-09-13
申请号：US11504256
申请日：2006-08-14
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L29/04 , H01L21/46
CPC分类号： H01L21/76254
摘要： A method for making a structure which may have at least one layer on a supporting substrate. The method includes at least the steps for forming from the supporting substrate an intermediate structure which may have an amorphous layer, a first crystalline layer containing point defects and, a second crystalline layer located immediately underneath the amorphous layer and in the lower portion of the intermediate structure. The method may also include bonding a receiving substrate on the upper face of the intermediate structure and removing the layer of the intermediate structure in which point defects have formed so that amorphous layer forms the upper layer of the intermediate structure. A structure made by such a method may comprise at least one thin layer of an amorphous material on a supporting substrate. The structure may comprise a receiving substrate, a central crystalline layer and an amorphous layer, all of which may lack any EOR type point defect.
摘要翻译：一种制造可在支撑基底上具有至少一层的结构的方法。该方法至少包括从支撑基底形成可以具有非晶层的中间结构，含有点缺陷的第一晶体层和位于非晶层正下方的中间结构层和位于中间层的下部的第二晶体层结构体。该方法还可以包括将接收衬底粘合在中间结构的上表面上，并去除其中形成缺陷的中间结构层，使得非晶层形成中间结构的上层。通过这种方法制成的结构可以在支撑衬底上包括至少一层非晶材料薄层。结构可以包括接收衬底，中心晶体层和非晶层，它们都可能缺少任何EOR型点缺陷。

5. 发明授权

US07585749B2 Methods of forming a layer of material on a substrate and structures formed therefrom 有权
标题翻译：在基材上形成材料层的方法和由其形成的结构
公开(公告)号：US07585749B2
公开(公告)日：2009-09-08
申请号：US11504256
申请日：2006-08-14
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/30 , H01L21/00 , H01L21/04
CPC分类号： H01L21/76254
摘要： A method for making a structure which may have at least one layer on a supporting substrate. The method includes at least the steps for forming from the supporting substrate an intermediate structure which may have an amorphous layer, a first crystalline layer containing point defects and, a second crystalline layer located immediately underneath the amorphous layer and in the lower portion of the intermediate structure. The method may also include bonding a receiving substrate on the upper face of the intermediate structure and removing the layer of the intermediate structure in which point defects have formed so that amorphous layer forms the upper layer of the intermediate structure.A structure made by such a method may comprise at least one thin layer of an amorphous material on a supporting substrate. The structure may comprise a receiving substrate, a central crystalline layer and an amorphous layer, all of which may lack any EOR type point defect.
摘要翻译：一种制造可在支撑基底上具有至少一层的结构的方法。该方法至少包括从支撑基底形成可以具有非晶层的中间结构，含有点缺陷的第一晶体层和位于非晶层正下方的中间结构层和位于中间层的下部的第二晶体层结构体。该方法还可以包括将接收衬底粘合在中间结构的上表面上，并去除其中形成缺陷的中间结构层，使得非晶层形成中间结构的上层。通过这种方法制成的结构可以在支撑衬底上包括至少一层非晶材料薄层。结构可以包括接收衬底，中心晶体层和非晶层，它们都可能缺少任何EOR型点缺陷。

6. 发明申请

US20080064182A1 PROCESS FOR HIGH TEMPERATURE LAYER TRANSFER 审中-公开
标题翻译：高温层转移过程
公开(公告)号：US20080064182A1
公开(公告)日：2008-03-13
申请号：US11621838
申请日：2007-01-10
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/30
CPC分类号： H01L21/76254
摘要： The invention concerns a method for transferring a thin layer from a donor wafer onto a receiving wafer by implanting at least one atomic species into the donor wafer to form a weakened zone therein, with the weakened zone being including microcavities or platelets therein, and the thin layer being defined between the weakened zone and a surface of the donor wafer; molecular bonding of the surface of the donor wafer onto a surface of the receiving wafer; splitting the thin layer at the zone of weakness by heating to a high temperature to transfer the thin layer to the receiving substrate; and treating the donor wafer to block or limit the formation of microcavities or platelets by trapping the atoms of at least one of the implanted atomic species at least until a certain release temperature is reached during the splitting. This method enables bonding energy to be reinforced adjacent the layer to be transferred and hence limits defects in the resulting heterostructure.
摘要翻译：本发明涉及通过将至少一种原子物质注入给体晶片以在其中形成弱化区域而将薄层从施主晶片转移到接收晶片上的方法，其中弱化区域包括微腔或血小板，薄层所述层被限定在所述弱化区域和所述施主晶片的表面之间; 施主晶片的表面的分子键合到接收晶片的表面上; 通过加热到高温将薄层区分成薄层以将薄层转移到接收基底; 并且通过将至少一种注入的原子物质的原子捕获至少在分裂期间达到一定的释放温度来处理施主晶片以阻止或限制微腔或血小板的形成。这种方法使得能够在待转移的层附近加强结合能，从而限制所得到的异质结构中的缺陷。

7. 发明申请

US20100044706A1 METHODS OF FORMING A LAYER OF MATERIAL ON A SUBSTRATE AND STRUCTURES FORMED THEREFROM 有权
标题翻译：在基材上形成材料层的方法及其形成的结构
公开(公告)号：US20100044706A1
公开(公告)日：2010-02-25
申请号：US12535056
申请日：2009-08-04
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L29/24
CPC分类号： H01L21/76254
摘要： Various structures that include at least one thin layer of an amorphous material on a supporting substrate. One structure generally has a receiving substrate, a central crystalline layer and an amorphous layer, all of which may lack any end of range point defects. Another structure includes an intermediate substrate having an upper face, an upper portion and a lower portion, an amorphous layer that does not contain end of range point defects, and a first crystalline layer containing end of range point defects subjacent the amorphous layer and located in the lower portion; and a supporting substrate bonded to the upper face of the intermediate substrate. That structure can also contain a weakened zone or porous layer to facilitate removal of the first crystalline layer to provide the amorphous layer as an upper layer of the semiconductor structure.
摘要翻译：在支撑衬底上包括非晶材料的至少一个薄层的各种结构。一个结构通常具有接收衬底，中心结晶层和非晶层，所有这些都可能缺少范围点缺陷的任何结束。另一种结构包括具有上表面，上部分和下部分的中间衬底，不包含端点缺陷终点的非晶层，以及包含位于非晶层下面的范围点缺陷末端的第一结晶层，并位于下部以及与中间基板的上表面接合的支撑基板。该结构还可以包含弱化区或多孔层，以有助于去除第一晶体层以提供作为半导体结构的上层的非晶层。

8. 发明授权

US07485551B2 Semiconductor-on-insulator type heterostructure and method of fabrication 失效
标题翻译：绝缘体上半导体型异质结构及其制造方法
公开(公告)号：US07485551B2
公开(公告)日：2009-02-03
申请号：US11327015
申请日：2006-01-05
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L21/265
CPC分类号： H01L21/76254 , Y10S438/974
摘要： The present invention relates to a method of fabricating a semiconductor-on-insulator-type heterostructure that includes at least one insulating layer interposed between a receiver substrate of semiconductor material and an active layer derived from a donor substrate of semiconductor material. The method includes the steps of bonding and active layer transfer. Prior to bonding, an atomic species which is identical or isoelectric with the insulating layer material is implanted in the insulating layer. The implantation forms a trapping layer, which can retain gaseous species present in the various interfaces of the heterostructure, thereby limiting formation of defects on the surface of the active layer.
摘要翻译：本发明涉及一种制造绝缘体上半导体型异质结构的方法，该方法包括介于半导体材料的接收衬底和源自半导体材料的施主衬底的有源层之间的至少一个绝缘层。该方法包括结合和活性层转移的步骤。在接合之前，将与绝缘层材料相同或等电的原子物质注入绝缘层。注入形成捕获层，其可以保留存在于异质结构的各种界面中的气体物质，从而限制有源层表面上的缺陷的形成。

9. 发明授权

US08212249B2 Methods of forming a layer of material on a substrate and structures formed therefrom 有权
标题翻译：在基材上形成材料层的方法和由其形成的结构
公开(公告)号：US08212249B2
公开(公告)日：2012-07-03
申请号：US12535056
申请日：2009-08-04
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L29/24
CPC分类号： H01L21/76254
摘要： Various structures that include at least one thin layer of an amorphous material on a supporting substrate. One structure generally has a receiving substrate, a central crystalline layer and an amorphous layer, all of which may lack any end of range point defects. Another structure includes an intermediate substrate having an upper face, an upper portion and a lower portion, an amorphous layer that does not contain end of range point defects, and a first crystalline layer containing end of range point defects subjacent the amorphous layer and located in the lower portion; and a supporting substrate bonded to the upper face of the intermediate substrate. That structure can also contain a weakened zone or porous layer to facilitate removal of the first crystalline layer to provide the amorphous layer as an upper layer of the semiconductor structure.
摘要翻译：在支撑衬底上包括非晶材料的至少一个薄层的各种结构。一个结构通常具有接收衬底，中心结晶层和非晶层，所有这些都可能缺少范围点缺陷的任何结束。另一种结构包括具有上表面，上部和下部的中间基板，不包含端点缺陷端的非晶层，以及包含位于非晶层的下方的范围点缺陷端部的第一结晶层，下部以及与中间基板的上表面接合的支撑基板。该结构还可以包含弱化区或多孔层，以有助于去除第一晶体层以提供作为半导体结构的上层的非晶层。

10. 发明申请

US20100207236A1 METHOD FOR MAKING A SUBSTRATE OF THE SEMICONDUCTOR ON INSULATOR TYPE WITH AN INTEGRATED GROUND PLANE 有权
标题翻译：用于制造具有整体式接地平面的绝缘体类型的半导体基板的方法
公开(公告)号：US20100207236A1
公开(公告)日：2010-08-19
申请号：US12678482
申请日：2008-10-10
申请人： Xavier Hebras
发明人： Xavier Hebras
IPC分类号： H01L27/12 , H01L21/762
CPC分类号： H01L21/76254 , H01L21/26506 , H01L21/324 , H01L21/76256 , H01L27/1203 , H01L29/78 , H01L29/78603
摘要： A method for making a semiconductor on insulator (SeOI) type substrate that includes an integrated ground plane under the insulating layer wherein the substrate is intended to be used in making electronic components. This method includes implanting atoms or ions of a metal in at least one portion of a semiconducting receiver substrate, carrying out a heat treatment of the receiver substrate in order to obtain an integrated ground plane on or in at least one portion of that receiver substrate, transferring an active layer stemming from a semiconducting donor substrate onto the receiver substrate, with an insulating layer being inserted in between the donor and receiver substrates to obtain the substrate with an integrated ground plane.
摘要翻译：一种制造绝缘体上半导体（SeOI）型衬底的方法，该衬底包括在绝缘层下方的集成接地面，其中该衬底用于制造电子部件。该方法包括将金属的原子或离子注入到半导体接收器衬底的至少一部分中，对接收器衬底进行热处理，以便在接收器衬底的至少一部分上或其中至少一部分获得集成接地面，将源自半导电施主衬底的有源层转移到接收器衬底上，其中绝缘层插入在施主和接收器衬底之间以获得具有集成接地面的衬底。

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