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    • 3. 发明申请
    • CHIP PACKAGE AND MANUFACTURING METHOD THEREOF
    • 芯片包装及其制造方法
    • US20160343882A1
    • 2016-11-24
    • US15157776
    • 2016-05-18
    • XINTEC INC.
    • Yi-Ying KUOMing-Chieh HUANGHsi-Chien LIN
    • H01L31/02H01L31/18H01L31/0216
    • H01L31/02002H01L21/561H01L23/3114H01L23/562H01L31/0216H01L31/186H01L2224/11
    • A chip package includes a chip, an insulating layer, a flowing insulating material layer and conductive layer. The chip has a conductive pad, a side surface, a first surface and a second surface opposite to the first surface, which the side surface is between the first surface and the second surface, and the conductive is below the first surface and protruded from the side surface. The insulating layer covers the second surface and the side surface, and the flowing insulating material layer is disposed below the insulating layer, and the flowing insulating material layer has a trench exposing the conductive pad protruded form the side surface. The conductive layer is disposed below the flowing insulating material layer and extended into the trench to contact the conductive pad.
    • 芯片封装包括芯片,绝缘层,流动绝缘材料层和导电层。 芯片具有导电焊盘,侧表面,与第一表面相对的第一表面和第二表面,侧表面位于第一表面和第二表面之间,并且导电体在第一表面下方并且从第一表面突出 侧面。 绝缘层覆盖第二表面和侧表面,并且流动绝缘材料层设置在绝缘层下方,并且流动绝缘材料层具有暴露从侧表面突出的导电焊盘的沟槽。 导电层设置在流动的绝缘材料层下方并延伸到沟槽中以接触导电焊盘。
    • 5. 发明申请
    • CHIP SCALE SENSING CHIP PACKAGE AND A MANUFACTURING METHOD THEREOF
    • 芯片尺寸感应芯片包装及其制造方法
    • US20170025370A1
    • 2017-01-26
    • US15209723
    • 2016-07-13
    • XINTEC INC.
    • Yin-Chen CHENJan-Lian LIAOMing-Chieh HUANGJyh-Wei CHENHsi-Chien LIN
    • H01L23/00H01L21/768H01L23/31H01L21/683H01L21/78
    • H01L24/06H01L21/6835H01L21/6836H01L21/76802H01L21/76877H01L21/78H01L23/3171H01L24/00H01L24/03H01L24/05H01L24/11H01L24/29H01L24/43H01L2221/68327H01L2221/6834H01L2224/0231H01L2224/0233H01L2224/0401H01L2224/04042H01L2224/0605H01L2924/00014H01L2224/45099
    • This present invention provides a method of manufacturing a chip scale sensing chip package, comprising the steps of: providing a sensing device wafer having a first top surface and a first bottom surface opposite to each other, whereby the sensing device wafer comprises a plurality of chip areas, and each of the chip areas comprising a sensing device and a plurality of conductive pads adjacent to the sensing chip nearby the first top surface; providing a cap wafer having a second top surface and a second bottom surface opposite to each other, and bonding the second surface of the cap wafer to the first top surface of the sensing device wafer by sandwiching a first adhesive layer therebetween; providing a temporary carrier substrate, and bonding the temporary carrier substrate to the second top surface of the cap wafer by sandwiching a second adhesive layer therebetween; forming a wiring layer connecting to each of the conductive pads on the first bottom surface of the sensing device wafer; providing a first protective layer on the wiring layer; removing the temporary carrier substrate and the second adhesive layer; forming a second protective layer on the second top surface; removing the first protective layer; scribing the chip areas to generate a plurality of individual chip scale sensing chip package; and removing the second protective layer.
    • 本发明提供了一种制造芯片级感测芯片封装的方法,包括以下步骤:提供具有彼此相对的第一顶表面和第一底表面的感测装置晶片,由此感测装置晶片包括多个芯片 区域,并且每个芯片区域包括感测装置和与第一顶表面附近的感测芯片相邻的多个导电焊盘; 提供具有彼此相对的第二顶表面和第二底表面的盖晶片,并且通过在其间夹住第一粘合剂层将盖晶片的第二表面粘合到感测装置晶片的第一顶表面; 提供临时载体基板,并且通过在其间夹着第二粘合剂层将临时载体基板结合到盖晶片的第二顶表面; 形成连接到感测装置晶片的第一底表面上的每个导电焊盘的布线层; 在所述布线层上提供第一保护层; 去除所述临时载体基板和所述第二粘合剂层; 在所述第二顶表面上形成第二保护层; 去除第一保护层; 划片芯片区域以产生多个单独的芯片级感测芯片封装; 并移除第二保护层。