专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20130120050A1 LOW-POWER VOLTAGE REFERENCE CIRCUIT 有权
标题翻译：低功耗电压参考电路
公开(公告)号：US20130120050A1
公开(公告)日：2013-05-16
申请号：US13293850
申请日：2011-11-10
申请人： Wuyang HAO , Jungwon Suh
发明人： Wuyang HAO , Jungwon Suh
IPC分类号： H03K17/14
CPC分类号： G05F3/242
摘要： Methods and apparatus for a providing temperature-compensated reference voltage are provided. In an example, a temperature-compensated voltage reference circuit includes a current mirror portion and a temperature-compensated output portion coupled to the current mirror portion. The temperature-compensated output portion comprises a very low threshold voltage (Vt) transistor coupled in series with a negative temperature coefficient transistor. The output portion can further include a positive temperature coefficient element coupled in series with the very low Vt transistor. The positive temperature coefficient element can be an adjustable resistive element. The output portion can further include an output transistor having a gate coupled to the current mirror portion and coupled between a supply voltage and the positive temperature coefficient element. The very low Vt transistor can be a substantially zero Vt n-channel metal-oxide-semiconductor (NMOS) transistor, and can be coupled in a diode configuration.
摘要翻译：提供了提供温度补偿参考电压的方法和装置。在一个示例中，温度补偿电压参考电路包括耦合到电流镜部分的电流镜部分和温度补偿输出部分。温度补偿输出部分包括与负温度系数晶体管串联耦合的非常低的阈值电压（Vt）晶体管。输出部分还可以包括与极低Vt晶体管串联耦合的正温度系数元件。正温度系数元件可以是可调电阻元件。输出部分还可以包括输出晶体管，其具有耦合到电流镜部分并且耦合在电源电压和正温度系数元件之间的栅极。非常低的Vt晶体管可以是基本为零的Vt n沟道金属氧化物半导体（NMOS）晶体管，并且可以以二极管配置耦合。

IPRDB

热门服务

关于我们

友情链接

联系方式