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1. 发明授权

US10121992B2 Transparent displaying apparatus 有权
公开(公告)号：US10121992B2
公开(公告)日：2018-11-06
申请号：US15031750
申请日：2016-02-26
申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L51/52 , G02F1/1347 , H01L27/32 , H01L51/00 , H01L51/56 , G09G3/36
摘要： The present invention provides a transparent displaying apparatus, which includes a transparent display (30/40) and a liquid crystal twisting layer (20) arranged on a back surface of the transparent display (30/40). The liquid crystal twisting layer (20) includes therein liquid crystal molecules that selectively exhibit two states of arrangement including a first one of being substantially perpendicular to the transparent display (30/40) and a second one of being substantially parallel to the transparent display (30/40). When the liquid crystal molecules of the liquid crystal twisting layer (20) are arranged perpendicular to the transparent display (30/40), the liquid crystal twisting layer (20) is in a transparent state, such that a viewer may see, on a display screen of the transparent display (30/40), background scenery on the backside of the transparent displaying apparatus; and when the liquid crystal molecules of the liquid crystal twisting layer (20) are arranged parallel to the transparent display (30/40), the liquid crystal twisting layer (20) is in a non-transparent state, such that a viewer does not see, on the display screen of the transparent display (30/40), the background scenery on the backside of the transparent displaying apparatus and, compared to the transparent state of the liquid crystal twisting layer (20), the display screen of the transparent display (30/40) in this state shows relatively high displaying contrast, providing a better effect of displaying.

2. 发明授权

US10204923B2 Thin-film-transistor (TFT) array panel with stress elimination layer and method of manufacturing the same 有权
公开(公告)号：US10204923B2
公开(公告)日：2019-02-12
申请号：US15937866
申请日：2018-03-28
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L27/12 , G02F1/1362 , H01L27/32 , H01L51/52 , G02F1/1333
摘要： The present invention provides a thin-film-transistor (TFT) array panel and manufacturing method of the same. The TFT array panel comprises a flexible baseplate, a buffer layer, and a display-element layer. The buffer layer is disposed on the flexible baseplate, a stress-elimination portion is disposed on the buffer layer, the stress-elimination portion is used to eliminate a stress of the flexible baseplate; the display-element layer is disposed on the buffer layer. The present invention is able to decrease the stress of the flexible baseplate, to prevent too large of a stress of the flexible baseplate.

3. 发明申请

US20180219055A1 FLEXIBLE VERTICAL CHANNEL ORGANIC THIN FILM TRANSISTOR AND MANUFACTURE METHOD THEREOF 审中-公开
公开(公告)号：US20180219055A1
公开(公告)日：2018-08-02
申请号：US15506239
申请日：2016-12-29
申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Chenghao Bu , Guoren Hu
IPC分类号： H01L27/32 , H01L51/10 , H01L51/05 , H01L51/52
摘要： Provided is a flexible vertical channel organic thin film transistor and a manufacture method thereof, which change the traditional configuration of the horizontal channel organic TFT and use the vertical channel configuration to tremendously shorten the channel length so that the TFT can obtain the larger source-drain current under the lower drive voltage; by using the flawless, high conductive and high transparent graphene material to manufacture the gate, the electronic performance of the TFT can be better; by using the hexagonal boron nitride material to manufacture the gate insulation layer to interact with the gate made by graphene, the electronic performance of the TFT can be promoted; because both the graphene and the hexagonal boron nitride materials are two dimension atomic layer structure material with better bendability and the channel layer uses the flexible organic semiconductor layer, the bendability of the entire TFT can be significantly promoted.

4. 发明授权

US09698177B1 Method for manufacturing N-type TFT 有权
公开(公告)号：US09698177B1
公开(公告)日：2017-07-04
申请号：US14892572
申请日：2015-10-28
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L27/00 , H01L27/12 , H01L29/786 , H01L29/49 , H01L29/45 , H01L29/51 , H01L29/66 , H01L27/32 , G02F1/1368
CPC分类号： H01L27/1281 , G02F1/1368 , G02F2202/104 , H01L27/1222 , H01L27/3262 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/51 , H01L29/518 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78633 , H01L29/78675 , H01L29/78678 , H01L29/78696
摘要： The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

5. 发明申请

US20170186783A1 METHOD FOR MANUFACTURING N-TYPE TFT 有权
公开(公告)号：US20170186783A1
公开(公告)日：2017-06-29
申请号：US14892572
申请日：2015-10-28
申请人： Shenzhen China Star Optoelectronics Technology Co. Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L27/12 , H01L29/66 , H01L29/45 , H01L29/51 , H01L29/786 , H01L29/49
CPC分类号： H01L27/1281 , G02F1/1368 , G02F2202/104 , H01L27/1222 , H01L27/3262 , H01L29/04 , H01L29/458 , H01L29/4908 , H01L29/51 , H01L29/518 , H01L29/66757 , H01L29/66765 , H01L29/78621 , H01L29/78633 , H01L29/78675 , H01L29/78678 , H01L29/78696
摘要： The present invention provides a method for manufacturing the N-type TFT, which includes subjecting a light shielding layer to a grating like patternization treatment for controlling different zones of a poly-silicon layer to induce difference of crystallization so as to have different zones of the poly-silicon layer forming crystalline grains having different sizes, whereby through just one operation of ion doping, different zones of the poly-silicon layer have differences in electrical resistivity due to difference of grain size generated under the condition of identical doping concentration to provide an effect equivalent to an LDD structure for providing the TFT with a relatively low leakage current and improved reliability. Further, since only one operation of ion injection is involved, the manufacturing time and manufacturing cost can be saved, damages of the poly-silicon layer can be reduced, the activation time can be shortened, thereby facilitating the manufacture of flexible display devices.

6. 发明授权

US10141341B2 Thin-film-transistor (TFT) array panel with stress elimination layer and method of manufacturing the same 有权
公开(公告)号：US10141341B2
公开(公告)日：2018-11-27
申请号：US14904954
申请日：2015-11-24
申请人： Shenzhen China Star Optoelectronics Technology Co., Ltd. , Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L27/12 , G02F1/1362 , H01L27/32 , H01L51/52 , G02F1/1333
摘要： The present invention provides a thin-film-transistor (TFT) array panel and manufacturing method of the same. The TFT array panel comprises a flexible baseplate, a buffer layer, and a display-element layer. The buffer layer is disposed on the flexible baseplate, a stress-elimination portion is disposed on the buffer layer, the stress-elimination portion is used to eliminate a stress of the flexible baseplate; the display-element layer is disposed on the buffer layer. The present invention is able to decrease the stress of the flexible baseplate, to prevent too large of a stress of the flexible baseplate.

7. 发明申请

US20180047943A1 TRANSPARENT DISPLAYING APPARATUS 审中-公开
公开(公告)号：US20180047943A1
公开(公告)日：2018-02-15
申请号：US15031750
申请日：2016-02-26
申请人： Wuhan China Star Optoelectronics Technology Co., Ltd.
发明人： Guoren Hu
IPC分类号： H01L51/52 , H01L51/00 , H01L51/56 , G09G3/36 , H01L27/32 , G02F1/1347
CPC分类号： H01L51/5281 , G02F1/1347 , G02F2201/44 , G09G3/36 , H01L27/32 , H01L27/3206 , H01L27/3232 , H01L27/3248 , H01L27/3258 , H01L27/3262 , H01L51/0096 , H01L51/5206 , H01L51/5234 , H01L51/5262 , H01L51/56 , H01L2227/323 , H01L2251/303
摘要： The present invention provides a transparent displaying apparatus, which includes a transparent display (30/40) and a liquid crystal twisting layer (20) arranged on a back surface of the transparent display (30/40). The liquid crystal twisting layer (20) includes therein liquid crystal molecules that selectively exhibit two states of arrangement including a first one of being substantially perpendicular to the transparent display (30/40) and a second one of being substantially parallel to the transparent display (30/40). When the liquid crystal molecules of the liquid crystal twisting layer (20) are arranged perpendicular to the transparent display (30/40), the liquid crystal twisting layer (20) is in a transparent state, such that a viewer may see, on a display screen of the transparent display (30/40), background scenery on the backside of the transparent displaying apparatus; and when the liquid crystal molecules of the liquid crystal twisting layer (20) are arranged parallel to the transparent display (30/40), the liquid crystal twisting layer (20) is in a non-transparent state, such that a viewer does not see, on the display screen of the transparent display (30/40), the background scenery on the backside of the transparent displaying apparatus and, compared to the transparent state of the liquid crystal twisting layer (20), the display screen of the transparent display (30/40) in this state shows relatively high displaying contrast, providing a better effect of displaying.

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