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1. 发明申请

US20110032990A1 APPARATUS AND METHOD FOR DEBLOCKING FILTERING IMAGE DATA AND VIDEO DECODING APPARATUS AND METHOD USING THE SAME 审中-公开
标题翻译：用于去除滤波图像数据的装置和方法以及使用该方法的视频解码装置和方法
公开(公告)号：US20110032990A1
公开(公告)日：2011-02-10
申请号：US12850094
申请日：2010-08-04
申请人： Woong-Il CHOI , Dae-Sung CHO , Jung-Hak NAM , Dong-Gyu SIM , Hyun-Ho JO
发明人： Woong-Il CHOI , Dae-Sung CHO , Jung-Hak NAM , Dong-Gyu SIM , Hyun-Ho JO
IPC分类号： H04N7/26
CPC分类号： H04N19/117 , H04N19/157 , H04N19/176 , H04N19/61 , H04N19/86
摘要： A deblocking filtering apparatus and method for removing block distortion of a decoded image, and a video decoding apparatus and method using the same. The deblocking filtering method includes extracting parameter information for a plurality of unit blocks in a macro block, from a header of an input current frame, determining whether to perform deblocking filtering, based on the extracted parameter information, and performing deblocking filtering on the macro block according to the determination result.
摘要翻译：一种用于去除解码图像的块失真的去块滤波装置和方法，以及使用其的视频解码装置和方法。去块滤波方法包括从输入当前帧的报头中提取宏块中的多个单位块的参数信息，基于提取的参数信息确定是否进行去块滤波，并对宏块执行去块滤波根据确定结果。

2. 发明申请

US20070246779A1 DUAL GATE OXIDE STRUCTURE IN SEMICONDUCTOR DEVICE AND METHOD THEREOF 审中-公开
标题翻译：半导体器件中的双栅氧化物结构及其方法
公开(公告)号：US20070246779A1
公开(公告)日：2007-10-25
申请号：US11769567
申请日：2007-06-27
申请人： Jong-Sik CHUN , Hyun-Ho JO , Byung-Hong CHUNG
发明人： Jong-Sik CHUN , Hyun-Ho JO , Byung-Hong CHUNG
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/823481 , H01L21/76229 , H01L21/823462
摘要： In the method of manufacturing a dual gate oxide layer of a semiconductor device, which has first and second active regions operating at mutually different voltages on a semiconductor substrate, the first and second active regions having a device isolation layer of STI (Shallow Trench Isolation) structure; the method of manufacturing the dual gate insulation layer includes, forming the device isolation layer so that an uppermost part thereof is positioned lower than an upper surface of the first and second active regions, before forming a gate insulation layer corresponding to each of the first and second active regions. Whereby, it is be effective till a portion of trench sidewall utilized as the active region, to increase a cell current of the active region and to prevent a stringer caused by a stepped coverage between the active region and a field region and a dent caused on a boundary face between the active region and the field region.
摘要翻译：在制造半导体器件的双栅氧化层的方法中，其具有在半导体衬底上以相互不同的电压工作的第一和第二有源区，所述第一和第二有源区具有STI（浅沟槽隔离）的器件隔离层，结构体; 制造双栅极绝缘层的方法包括：在形成与第一和第二有源区的上表面相对应的栅绝缘层之前，形成器件隔离层，使其最上部位于第一和第二有源区的上表面下方，第二活跃区域。由此，直到用作有源区域的沟槽侧壁的一部分为止，增加有源区域的单元电流并且防止由有源区域和场区域之间的阶梯式覆盖引起的桁条以及由活动区域和场区域之间的边界面。

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